Untitled
Abstract: No abstract text available
Text: VTP Process Photodiodes VTP7110 PACKAGE DIMENSIONS inch mm CASE 7 LATERAL CHIP ACTIVE AREA: .0011 in2 (0.684 mm2) PRODUCT DESCRIPTION Small area planar silicon photodiode in a clear, lensed sidelooking package. These diodes exhibit low dark current under reverse bias and
|
Original
|
PDF
|
VTP7110
|
Untitled
Abstract: No abstract text available
Text: VTP Process Photodiodes VTP7110H PACKAGE DIMENSIONS inch mm CASE 7 LATERAL CHIP ACTIVE AREA: .0011 in2 (0.684 mm2) PRODUCT DESCRIPTION Small area planar silicon photodiode in a clear, lensed sidelooking package. These diodes exhibit low dark current under reverse bias and
|
Original
|
PDF
|
VTP7110H
|
VTP7110
Abstract: No abstract text available
Text: VTP Process Photodiodes VTP7110 PACKAGE DIMENSIONS inch mm CASE 7 LATERAL CHIP ACTIVE AREA: .0011 in2 (0.684 mm2) PRODUCT DESCRIPTION Small area planar silicon photodiode in a clear, lensed sidelooking package. These diodes exhibit low dark current under reverse bias and
|
Original
|
PDF
|
VTP7110
VTP7110
|
VTP7110H
Abstract: No abstract text available
Text: VTP Process Photodiodes VTP7110H PACKAGE DIMENSIONS inch mm CASE 7 LATERAL CHIP ACTIVE AREA: .0011 in2 (0.684 mm2) PRODUCT DESCRIPTION Small area planar silicon photodiode in a clear, lensed sidelooking package. These diodes exhibit low dark current under reverse bias and
|
Original
|
PDF
|
VTP7110H
VTP7110H
|
C1383 NPN transistor collector base and emitter
Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,
|
Original
|
PDF
|
10-foot
C1383 NPN transistor collector base and emitter
NPN transistor c1383
C1383 transistor
C1383 NPN transistor
Light-Dependent Resistor specification
c1983 transistor
pin configuration of C1383 transistor
LHI968
lhi878
c1383
|
VTP8651
Abstract: VTP1112 VTP4085 VTP1188S VTP11188S VTP1232 silicon photodiode array VTP1012 VTP7840 VTP100
Text: VTP Process Photodiodes VTP100 PACKAGE DIMENSIONS inch mm CASE 52 FLAT SIDELOOKER CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a molded plastic sidelooker package. The package material is infrared transmitting (blocking visible light).
|
Original
|
PDF
|
VTP100
VTP8651
VTP1112
VTP4085
VTP1188S
VTP11188S
VTP1232
silicon photodiode array
VTP1012
VTP7840
VTP100
|
Untitled
Abstract: No abstract text available
Text: VTP7110 VTP Process Photodiodes PACKAGE DIMENSIONS inch mm .0 55 (1 .4 0 ) •70 (1 7 .8 ) .045 ( 1 .1 4 ) r MINIMUM 028 (0 .7 1 ) MAX. 1- CATHODE r .1 80 ( 4 .5 7 ) .1 70 (4 .3 2 ) J_ (2 -5 4 ) ANODE - .04 (1 .0 2 ) NOM. ■065 (1 .6 5 ) .235 (5 .9 7 )
|
OCR Scan
|
PDF
|
VTP7110
|
VTP7110
Abstract: No abstract text available
Text: VTP7110 VTP Process Photodiodes P A C K A G E DIMENSIONS inch mm .0 5 5 ( 1 .4 0 ) .7 0 ( 1 7 . 8 ) .0 4 5 ( 1 . 1 4 ) MINIMUM .0 2 0 ( 0 . 7 1 ) MAX. CATHODE r .1 8 0 ( 4 . 5 7 ) .1 7 0 ( 4 .3 2 ) J_ ( 2 .5 4 ) ANODE -j •065 ( 1 .6 5 ) ■2S 5 ( 5 . 9 7 )
|
OCR Scan
|
PDF
|
VTP7110
VTP7110
|
VTP1113
Abstract: VTP413 VTP3310L VTP1012 VTP1150 VTP1150S VTP1250 VTP1250S VTP5041 VTP7110
Text: VTP PROCESS FAST RESPONSE HIGH DARK RESISTANCE PRODUCT DESCRIPTION FEATURES • Visible to enhanced IR spectral range. This series of P on N silicon diodes is primarily intended for use with reverse bias but m ay be used in the photovoltaic m ode. These diodes have ex
|
OCR Scan
|
PDF
|
940nm,
VTP1113
VTP413
VTP3310L
VTP1012
VTP1150
VTP1150S
VTP1250
VTP1250S
VTP5041
VTP7110
|
