bd139 equivalent transistor
Abstract: Str W 5754 PHILIPS colour television schematic 14 diode gp 805 CIRCUIT DIAGRAM OF BD139 140 AN98014 BD139 PIN DIAGRAM 222285247104 china tv schematic diagram tv receiver schematic diagram PHILIPS
Text: APPLICATION NOTE A broadband 150 W amplifier for band IV & V TV transmitters based on the BLV862 AN98014 Philips Semiconductors A broadband 150 W amplifier for band IV & V TV transmitters based on the BLV862 CONTENTS 1 ABSTRACT 2 INTRODUCTION 3 TRANSISTOR DESCRIPTION
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BLV862
AN98014
SCA57
bd139 equivalent transistor
Str W 5754
PHILIPS colour television schematic 14
diode gp 805
CIRCUIT DIAGRAM OF BD139 140
AN98014
BD139 PIN DIAGRAM
222285247104
china tv schematic diagram
tv receiver schematic diagram PHILIPS
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BY206 diode
Abstract: tv schematic diagram PHILIPS china tv schematic diagram free BY206 china tv schematic diagram transposers BLV58 AN98028 BD136 uhf circulator
Text: APPLICATION NOTE A linear broadband 12 W amplifier for band IV/V TV transposers based on the BLV58 AN98028 Philips Semiconductors A linear broadband 12 W amplifier for band IV/V TV transposers based on the CONTENTS 1 ABSTRACT 2 INTRODUCTION 3 GENERAL CONSIDERATIONS
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BLV58
AN98028
SCA57
BY206 diode
tv schematic diagram PHILIPS
china tv schematic diagram free
BY206
china tv schematic diagram
transposers
BLV58
AN98028
BD136
uhf circulator
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bd139 equivalent
Abstract: BLV862 ATC180R philips power transistor bd139 transistor DK ql AN98014 blv861 linear handbook MGM734 860mhz rf amplifier circuit diagram
Text: APPLICATION NOTE A Broadband 100 W Push Pull Amplifier for Band IV & V TV Transmitters based on the BLV861 AN98033 Philips Semiconductors A Broadband 100 W Push Pull Amplifier for Band IV & V TV Transmitters based on the BLV861 CONTENTS 1 INTRODUCTION 2 TRANSISTOR DESCRIPTION
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BLV861
AN98033
BLV861
SCA57
bd139 equivalent
BLV862
ATC180R
philips power transistor bd139
transistor DK ql
AN98014
linear handbook
MGM734
860mhz rf amplifier circuit diagram
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Si4133W
Abstract: Si4133W-BM Si4133WM-EVB Wideband Synthesizer
Text: Si4133W RF Synthesizer for W-CDMA DUAL-BAND RF FREQUENCY SYNTHESIZER WITH INTEGRATED VCOS FOR W-CDMA WIRELESS COMMUNICATIONS FEATURES • Dual-Band RF Synthesizers RF1: 2.3 GHz to 2.5 GHz RF2: 750 MHz to 1.65 GHz • IF Synthesizer IF: 62.5 MHz to 1.0 GHz
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Si4133W
28-pin
Si4133W-BM
RD-500/MRT-7
28-lead
Si4133WM-EVB
Wideband Synthesizer
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Untitled
Abstract: No abstract text available
Text: Waveguide Mixer Down Converter WR-10 From 75 GHz to 110 GHz, IF From DC to 18 GHz And LO Power of +13 dBm, UG-387/U Flange, W Band Waveguide Converters - PE12D1000 Features • W Band 75 to 110 GHz full waveguide Down converter • Broad IF Frequency Range: DC to 18 GHz
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WR-10
UG-387/U
PE12D1000
UG-387/U-MOD
PE12D1000
er-wr-10-75-110-ghz-if-18-ghz-pe12d1000-p
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MA27077G
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Band Switching Diodes MA27077G Silicon epitaxial planar type For band switching • Package ■ Features • Code SSSMini2-F3 • Pin Name 1: Anode 2: Cathode Th an W is k y Th e a pro ou Fo an po du fo
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2002/95/EC)
MA27077G
MA27077G
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MA2S077G
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Band Switching Diodes MA2S077G Silicon epitaxial planar type For band switching • Package ■ Features • Code SSMini2-F4 • Pin Name 1: Anode 2: Cathode Th an W is k y Th e a pro ou Fo an po du fo
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2002/95/EC)
MA2S077G
MA2S077G
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TL25XI
Abstract: HPA cpi CPI twt tube 400 W IESS-308/309 phase noise specification
Text: CPI 2.25 and 2.50 kW SuperLinear tm TWT Amplifiers for Satellite Communications X- Band The TL22XI and TL25XI TWTAs X-Band Up to 2.5 kW 1110 W operating TWT Compact High Power Amplifiers, featuring high efficiency, small size and integral computer interface.
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TL22XI
TL25XI
HPA cpi
CPI twt tube 400 W
IESS-308/309 phase noise specification
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transformer EE-33
Abstract: tdk 4.0 mc 2.4 ghz adjustable frequency RSSI Motorola L6 phone schematic diagram
Text: MC13145 Low Power Integrated Receiver for ISM Band Applications UHF WIDEBAND RECEIVER SUBSYSTEM LNA, Mixer, VCO, Prescalar, IF Subsystem, Coilless Detector The MC13145 is a dual conversion integrated RF receiver intended for ISM band applications. It features a Low Noise Amplifier (LNA), two 50 W
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MC13145
MC13146)
MC33410
MC33411A/B)
MC13145
MMBV809LT1
A638AN
A099YWN
MC13145FTA
transformer EE-33
tdk 4.0 mc
2.4 ghz adjustable frequency RSSI
Motorola L6 phone schematic diagram
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Untitled
Abstract: No abstract text available
Text: HMC401QS16G / 401QS16GE v03.0810 VCOs - SMT Ku-Band MMIC VCO with DIVIDE-BY-8 13.2 - 13.5 GHz Typical Applications Features Low noise MMIC VCO w/Divide-by-8 for Ku-Band applications such as: Pout: -7 dBm • Point-to-Point Radios No External Resonator Needed
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HMC401QS16G
401QS16GE
QSOP16G
HMC401QS16G
HMC401QS16GE
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Untitled
Abstract: No abstract text available
Text: Rectifying diodes m CATHODE MARK f PMDS CATHODE BAND CATHODE BAND ¿ D .6 ± 0 . I t — c - w~~ ?9 ± I I. I }> — w ^ 1 . _ an A ! 3.0 + 0 2 ¿ 2 . 510.2 . J 29 + MSR CATHODE BAND 5.0 * C LLDL A 28 0+2 4 3+0 5 0. 2 2 8 0±2 DO-41 When ordering these diodes, ROHM requires the following information:
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DO-41
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Untitled
Abstract: No abstract text available
Text: BB620 VHF VARIABLE CAPACITANCE DIODE The BB620 is a VHF variable capacitance diode in planar technology w ith a very high capacitance ratio intended fo r VHF-band A up to 160 MHz in all-band tuners.
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BB620
BB620
OD123
10/uA
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Untitled
Abstract: No abstract text available
Text: • bbSBTBl D024415 b3S W A P X N AMER PHI LIP S/DISCRETE BB620 b7E D yv VHF VARIABLE CAPACITANCE DIODE The BB620 is a VHF variable capacitance diode in planar technology w ith a very high capacitance ratio intended fo r VHF-band A up to 160 MHz in all-band tuners.
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D024415
BB620
BB620
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BZM55C3V6
Abstract: BZM55C18 BZM55C2V4 BZM55C2V7 BZM55C3V0 BZM55C3V3 BZM55C3V9 BZM55C75 79 05 ct DS30005
Text: BZM55C2V4 - BZM55C75 500mW SURFACE MOUNT ZENER DIODE Features 500m W Power Dissipation High Stability Low Noise Hemetic Package Mechanical Data Case: MicroMELF, Glass Terminals: Solderable per M IL-STD-202, Method 208 Polarity: Cathode Band Marking: Cathode Band Only
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BZM55C2V4
BZM55C75
500mW
MIL-STD-202,
200mA
DS30005
BZM55C2V4-BZM55C75
BZM55C3V6
BZM55C18
BZM55C2V7
BZM55C3V0
BZM55C3V3
BZM55C3V9
BZM55C75
79 05 ct
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HA17715G
Abstract: Wien Bridge Oscillator application of Wien Bridge Oscillator a7v TRANSISTOR Wien Bridge Oscillator application HA17715 HA1771
Text: HA17715G »High S le w R a te O p eration al A m plifier H A 1 7 7 1 5 is an operational am plifier o f high speed and high gain, and it's application is possible in A /D , D/A converter, active filter, w ide band w idth am plifier, com parator, sample hold circu it, and general feedback circu it required w ide band
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HA17715G
65MHz
HA1771
HA17715G
Wien Bridge Oscillator
application of Wien Bridge Oscillator
a7v TRANSISTOR
Wien Bridge Oscillator application
HA17715
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Untitled
Abstract: No abstract text available
Text: Switches, with TTL Drivers pin diode 10 to 3000 MHz m case style selection outline drawings see Table of Contents W TOSW INSERTION LOSS dB FREQUENCY MHz low-band upper band Iw TYPE TOSW-230 TOSW-425 SPDT SP4T 10-3000 10-2500 1.3 1.9 1.7 1.8 1.1 1.5 ZSDR-230
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OSW-230
OSW-425
ZSDR-230
ZSDR-425
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IC SEM 2004
Abstract: No abstract text available
Text: SEM ICONDUCTOR TE CHNICAL DATA KDV1480 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE FM RADIO BAND TUNING APPLICATION. FEATURES • A pplicable to FM w ide band due to high capacitance ratio. • E xcellent C -V C haracteristics. • V ariations o f C apacitance V alues is Little.
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KDV1480
IC SEM 2004
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Untitled
Abstract: No abstract text available
Text: BA682 BA683 _J V BAND-SWITCHING DIODES FOR SURFACE MOUNTING Switching diodes in a SOD-80 envelope, intended fo r band switching in v.h.f. television tuners. A special feature o f these diodes is their low capacitance. These SM diodes are leadless diodes in an hermetically sealed m icro m iniature glass envelope w ith
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BA682
BA683
OD-80
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Untitled
Abstract: No abstract text available
Text: HL6312/13G AIGalnP Laser Diodes Description The H L6312/13G are 0.63 ¿im band A IG alnP laser diodes w ith a m ulti-quantum w ell M Q W structure. W avelength is equal to H e-N e G as laser. T hey are suitable as light sources in b ar code readers . laser
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HL6312/13G
HL6312G/HL6313G
HL6312/13G:
HL6312G
HL6313G
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Untitled
Abstract: No abstract text available
Text: HL1521 A/AC InGaAsP LD Description T he H L 1521A /A C are 1.55 pm band laser diodes w ith a double heterostructure. featu res • L ong w avelength output: Ap = 1530 to 1570 nm • 5 m W C W operation at room tem perature • Fast pulse response: t,., tf < 0.5 ns
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HL1521
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Untitled
Abstract: No abstract text available
Text: 1T369 sony, Silicon Variable Capacitance Diode Description The 1T369 is a super miniature package variable capacitance diode for a wide-band CATV. Package Outline Unit : mm • 0.9 * w C .3-W « Features • Super miniature package • Small series resistance
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1T369
1T369
E92903Â
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transistor nec cel
Abstract: No abstract text available
Text: NPN SILICON BIPOLAR L-BAND POWER TRANSISTOR OUTLINE DIMENSIONS FEATURES_ • HIGH OUTPUT POWER: 0.7 W 2.0 W Class A Class AB • LOW IM DISTORTION: -36 dBc @ 0.5 W PEP Class A -33 dBc @ 1.0 W PEP (Class AB) • HIGH LINEAR GAIN:
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NEL200101-24
NEL200101-24
transistor nec cel
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MA860
Abstract: FDLL600
Text: FDH600 / FDLL600 D iscrete POWER & S ign al Technologies National 9 Semiconductor" FDH / FDLL 600 C O L O R B A N D M A R K IN G D E V IC E FD LL600 1ST BAND RED 2N D BAND W H IT E High Conductance Ultra Fast Diode Sourced from Process 1R. Absolute Maximum Ratings*
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DO-35
FDLL600
LL-34
MA860
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47401H-0000
Abstract: No abstract text available
Text: HUGHES/ HICROUAVE PRDTS l^E D B MU13303 0000812 2 B T-07-07 Beam Lead Mixer Diodes The Hughes 47401H-0000 and 47406H-0000 beam lead mixer diodes are available for use in EHF mixer applications requiring the ultimate in performance. Conversion losses of 5 dB in Ka-Band and 6.5 dB in W-Band have been achieved
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MU13303
T-07-07
47401H-0000
47406H-0000
47406H-0000
H-0000
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