Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    W-BAND MMIC LNA Search Results

    W-BAND MMIC LNA Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    CLC425AJE Rochester Electronics LLC OP-AMP, 800uV OFFSET-MAX, 1900MHz BAND WIDTH, PDSO8, PLASTIC, SOIC-8 Visit Rochester Electronics LLC Buy
    MAX4352EUK-T Rochester Electronics LLC OP-AMP, 12000uV OFFSET-MAX, 30MHz BAND WIDTH, PDSO5, MO-178AA, SOT-23, 5 PIN Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy

    W-BAND MMIC LNA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NJG1133MD7

    Abstract: MLK0603
    Text: NJG1133MD7 W-CDMA Triple Band LNA GaAs MMIC QGENERAL DISCRIPTION QPACKAGE OUTLINE NJG1133MD7 is a triple band LNA IC designed for W-CDMA/UMTS cellular phone of 2.1GHz, 1.7GHz and 800MHz band. This IC has a LNA pass-through function to select high gain mode


    Original     		PDF NJG1133MD7 NJG1133MD7 800MHz EQFN14-D7 EQFN14-D7 397mm 0034g MLK0603

    Untitled

    Abstract: No abstract text available
    Text: NJG1133MD7 W-CDMA Triple Band LNA GaAs MMIC !GENERAL DISCRIPTION !PACKAGE OUTLINE NJG1133MD7 is a triple band LNA IC designed for W-CDMA/UMTS cellular phone of 2.1GHz, 1.7GHz and 800MHz band. This IC has a LNA pass-through function to select high gain mode


    Original     		PDF NJG1133MD7 NJG1133MD7 800MHz EQFN14-D7 EQFN14-D7 397mm EQFN14-D7)

    MLK0603

    Abstract: NJG1133MD7
    Text: NJG1133MD7 W-CDMA Triple Band LNA GaAs MMIC !GENERAL DISCRIPTION !PACKAGE OUTLINE NJG1133MD7 is a triple band LNA IC designed for W-CDMA/UMTS cellular phone of 2.1GHz, 1.7GHz and 800MHz band. This IC has a LNA pass-through function to select high gain mode


    Original     		PDF NJG1133MD7 NJG1133MD7 800MHz EQFN14-D7 EQFN14-D7 397mm 133MD7 EQFN14-D7) MLK0603

    LNA at 15 GHz with input power -160dB

    Abstract: NJG1119PB4 HK1005 LQW15A
    Text: NJG1119PB4 W-CDMA Dual LNA GaAs MMIC QGENERAL DESCRIPTION QPACKAGE OUTLINE The NJG1119PB4 is a Dual band LNA IC designed for W-CDMA cellular phone of 2.1GHz and 800MHz band. This IC has a LNA pass-through function to select high gain mode or low gain mode.


    Original     		PDF NJG1119PB4 NJG1119PB4 800MHz FFP12 FFP12-B4 2140MHz 885MHz LNA at 15 GHz with input power -160dB HK1005 LQW15A

    Untitled

    Abstract: No abstract text available
    Text: NJG1119PB4 W-CDMA Dual LNA GaAs MMIC QGENERAL DESCRIPTION QPACKAGE OUTLINE The NJG1119PB4 is a Dual band LNA IC designed for W-CDMA cellular phone of 2.1GHz and 800MHz band. This IC has a LNA pass-through function to select high gain mode or low gain mode.


    Original     		PDF NJG1119PB4 800MHz FFP12 NJG1119 FFP12-B4 2140MHz 885MHz

    INV20

    Abstract: No abstract text available
    Text: NJG1123PB5 W-CDMA Triple LNA GaAs MMIC GENERAL DESCRIPTION PACKAGE OUTLINE NJG1123PB5 is a Triple band LNA IC designed for W-CDMA / UMTS cellular phone of 2.1GHz, 1.7GHz and 800MHz band. This IC has a LNA pass-through function to select high gain mode or low gain mode.


    Original     		PDF NJG1123PB5 800MHz FFP16 FFP16-B5 2140MHz, 1860MHz16 885MHz 2140MHz INV20

    mlg0603

    Abstract: FFP16 FFP16-B5 HK1005 NJG1123PB5
    Text: NJG1123PB5 W-CDMA Triple LNA GaAs MMIC !GENERAL DESCRIPTION !PACKAGE OUTLINE NJG1123PB5 is a Triple band LNA IC designed for W-CDMA / UMTS cellular phone of 2.1GHz, 1.7GHz and 800MHz band. This IC has the function which bypasses LNA, and high gain mode or low gain mode can be chosen.


    Original     		PDF NJG1123PB5 NJG1123PB5 800MHz FFP16 FFP16-B5 mlg0603 FFP16-B5 HK1005

    diode 1GHz

    Abstract: No abstract text available
    Text: AMPLIFIERS 1.9/2.1GHz BAND CDMA LNA GaAs MMIC NJG1105F1 DATA SHEET TENTATIVE • GENERAL DESCRIPTION NJG1105F1 is a Low Noise Amplifier GaAs MMIC designed for 1.9/2.1GHz digital cellular phone handsets such as PCS and W-CDMA. This amplifier provides low noise figure, high gain and high


    Original     		PDF NJG1105F1 NJG1105F1 diode 1GHz

    HK1608

    Abstract: NJG1105F DCS1800 GRM36 HK1005
    Text: NJG1105F 1.8/1.9/2.1GHz BAND LOW NOISE AMPLIFIER GaAs MMIC nGENERAL DESCRIPTION NJG1105F is a Low Noise Amplifier GaAs MMIC designed for 1.8/1.9/2.1GHz digital cellular phone handsets such as DCS1800, PCS and W-CDMA. This amplifier provides low noise figure, high gain and


    Original     		PDF NJG1105F NJG1105F DCS1800, 1860MHz 1960MHz 2140MHz 1860/1960/2140MHz HK1608 DCS1800 GRM36 HK1005

    2185v

    Abstract: HK1005 LQW15A NJG1122PB4
    Text: NJG1122PB4 W-CDMA Dual LNA GaAs MMIC QGENERAL DESCRIPTION The NJG1122PB4 is a Dual band LNA IC designed for W-CDMA cellular phone of 2.1GHz and 800MHz band. This IC has a LNA pass-through function to select high gain mode or low gain mode. An ultra small and ultra thin package of FFP12–B4 is adopted.


    Original     		PDF NJG1122PB4 NJG1122PB4 800MHz FFP12 FFP12-B4 2140MHz16 885MHz 2185v HK1005 LQW15A

    dd s22

    Abstract: DCS1800 GRM36 HK1005 HK1608 NJG1105F
    Text: NJG1105F 1.8/1.9/2.1GHz BAND LOW NOISE AMPLIFIER GaAs MMIC nGENERAL DESCRIPTION NJG1105F is a Low Noise Amplifier GaAs MMIC designed for 1.8/1.9/2.1GHz digital cellular phone handsets such as DCS1800, PCS and W-CDMA. This amplifier provides low noise figure, high gain and


    Original     		PDF NJG1105F NJG1105F DCS1800, 1860MHz 1960MHz 2140MHz 1860/1960/2140MHz dd s22 DCS1800 GRM36 HK1005 HK1608

    DCS1800

    Abstract: GRM36 HK1005 HK1608 NJG1105F dd s22
    Text: NJG1105F 1.8/1.9/2.1GHz BAND LOW NOISE AMPLIFIER GaAs MMIC nGENERAL DESCRIPTION NJG1105F is a Low Noise Amplifier GaAs MMIC designed for 1.8/1.9/2.1GHz digital cellular phone handsets such as DCS1800, PCS and W-CDMA. This amplifier provides low noise figure, high gain and


    Original     		PDF NJG1105F NJG1105F DCS1800, 1860MHz 1960MHz 2140MHz 1860/1960/2140MHz DCS1800 GRM36 HK1005 HK1608 dd s22

    FFP16

    Abstract: FFP16-B5 NJG1125PB5
    Text: NJG1125PB5 W-CDMA Triple LNA GaAs MMIC QGENERAL DESCRIPTION NJG1125PB5 is a Triple band LNA IC designed for W-CDMA /UMTS cellular phone of 2.1GHz, 1.7GHz and 800MHz band. This IC has a LNA pass-through function to select high gain mode or low gain mode. An ultra small and ultra thin package of FFP16–B5 is adopted.


    Original     		PDF NJG1125PB5 NJG1125PB5 800MHz FFP16 FFP16-B5 FFP16-B5

    Untitled

    Abstract: No abstract text available
    Text: NJG1122PB4 W-CDMA Dual LNA GaAs MMIC QGENERAL DESCRIPTION The NJG1119PB4 is a Dual band LNA IC designed for W-CDMA cellular phone of 2.1GHz and 800MHz band. This IC has a LNA pass-through function to select high gain mode or low gain mode. An ultra small and ultra thin package of FFP12–B4 is adopted.


    Original     		PDF NJG1122PB4 NJG1119PB4 800MHz FFP12 NJG1122PB4 FFP12-B4

    HK1005

    Abstract: NJG1116HB3
    Text: NJG1116HB3 2.1GHz Band LNA GaAs MMIC •GENERAL DESCRIPTION NJG1116HB3 is a LNA IC designed for 2.1GHz band W-CDMA cellular phone .This IC has the function which passes LNA, and high gain mode or low gain mode can be chosen. An ultra small and ultra thin package of USB8 is


    Original     		PDF NJG1116HB3 NJG1116HB3 2140MHz HK1005

    HK1005

    Abstract: MLG0603Q NJG1126HB6
    Text: NJG1126HB6 2.1GHz Band LNA GaAs MMIC QGENERAL DESCRIPTION NJG1126HB6 is a LNA IC designed for 2.1GHz band W-CDMA cellular phone . This IC has the function which bypasses LNA, and high gain mode or low gain mode can be chosen. High IIP3 and a low noise are achieved at the High gain mode.


    Original     		PDF NJG1126HB6 NJG1126HB6 HK1005 MLG0603Q

    HMC604LP3

    Abstract: No abstract text available
    Text: HMC604LP3 / 604LP3E v00.0308 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 4.8 - 6.0 GHz Amplifiers - low Noise - smT 7 Typical Applications Features The HmC604lp3 / HmC604lp3e is ideal for: Noise figure: 1.5 dB • wimAX/C-band radio output ip3: +26 dBm


    Original     		PDF HMC604LP3 604LP3E HMC604LP3E

    DSRC 5.8 GHz

    Abstract: Tower Mounted Amplifiers Schematic schematic dsrc HMC604LP3 HMC604LP3E
    Text: HMC604LP3 / 604LP3E v00.0308 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 4.8 - 6.0 GHz LOW NOISE AMPLIFIERS - SMT 5 Typical Applications Features The HMC604LP3 / HMC604LP3E is ideal for: Noise Figure: 1.5 dB • WiMAX/C-band Radio Output IP3: +26 dBm


    Original     		PDF HMC604LP3 604LP3E HMC604LP3E DSRC 5.8 GHz Tower Mounted Amplifiers Schematic schematic dsrc

    DSRC 5.8 GHz

    Abstract: No abstract text available
    Text: HMC604LP3 / 604LP3E v00.0308 Amplifiers - Low Noise - SMT 7 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 4.8 - 6.0 GHz Typical Applications Features The HMC604LP3 / HMC604LP3E is ideal for: Noise Figure: 1.5 dB • WiMAX/C-band Radio Output IP3: +26 dBm


    Original     		PDF HMC604LP3 604LP3E HMC604LP3E DSRC 5.8 GHz

    CMH0819

    Abstract: VQFN-24
    Text: GaAs MMIC CMH0819 Target Datasheet • High-Linearity, Dual-Band LNA/Mixer IC for PCS IF Out use in TDMA and CDMA Mobile Phones • Integrated bypass switch for LNAs LNA • GaAs PHEMT Process • Leadless 3.5 x 4.5 mm. SMT package LO CELLULAR • LO – Input power range: -7.0 to 0 dBm


    Original     		PDF CMH0819 VQFN-24 CMH0819 VQFN-24

    CAP 0402

    Abstract: GaAs FET amplifer mmic marking c8 GaAs FET amplifer chip CMH0819 VQFN-24 MMIC marking code 132 MMIC marking code 101 mmic code marking P 18 mmic c8
    Text: GaAs MMIC CMH0819 • High-Linearity, Dual-Band LNA/Mixer IC for PCS use in CDMA and TDMA Mobile Phones Filter Ports • Integrated bypass switch for LNAs CDMA • GaAs PHEMT Process • Leadless 3.5 x 4.5 mm. SMT package LNA • LO Input power range: -7.0 to 0 dBm


    Original     		PDF CMH0819 VQFN-24 CMH0819 CAP 0402 GaAs FET amplifer mmic marking c8 GaAs FET amplifer chip VQFN-24 MMIC marking code 132 MMIC marking code 101 mmic code marking P 18 mmic c8

    XR1006-BD

    Abstract: DM6030HK TS3332LD XR1006 XR1006-BD-000V XR1006-BD-EV1
    Text: 18.0-25.0 GHz GaAs MMIC Receiver August 2007 - Rev 13-Aug-07 Features Chip Device Layout R1006-BD Sub-harmonic Receiver Integrated LNA, LO Buffer, Image Reject Mixer +2.0 dBm LO Drive Level 2.5 dB Noise Figure 15.0 dB Image Rejection 100% On-Wafer RF, DC and Noise Figure Testing


    Original     		PDF 13-Aug-07 R1006-BD MIL-STD-883 XR1006-BD-000V XR1006-BD-EV1 XR1006 XR1006-BD DM6030HK TS3332LD XR1006-BD-000V XR1006-BD-EV1

    R1006 transistor

    Abstract: transistor R1006 r1006 R1006 diode 84-1LMI XR1006
    Text: 18.0-25.0 GHz GaAs MMIC Receiver R1006 May 2005 - Rev 13-May-05 Features Chip Device Layout Sub-harmonic Receiver Integrated LNA, LO Buffer, Image Reject Mixer +2.0 dBm LO Drive Level 2.5 dB Noise Figure 15.0 dB Image Rejection 100% On-Wafer RF, DC and Noise Figure Testing


    Original     		PDF R1006 13-May-05 MIL-STD-883 R1006 transistor transistor R1006 r1006 R1006 diode 84-1LMI XR1006

    DM6030HK

    Abstract: TS3332LD XR1006 XR1006-BD XR1006-BD-000V XR1006-BD-EV1
    Text: 18.0-25.0 GHz GaAs MMIC Receiver August 2007 - Rev 13-Aug-07 Features Chip Device Layout R1006-BD Sub-harmonic Receiver Integrated LNA, LO Buffer, Image Reject Mixer +2.0 dBm LO Drive Level 2.5 dB Noise Figure 15.0 dB Image Rejection 100% On-Wafer RF, DC and Noise Figure Testing


    Original     		PDF 13-Aug-07 R1006-BD MIL-STD-883 XR1006-BD-000V XR1006-BD-EV1 XR1006 DM6030HK TS3332LD XR1006-BD XR1006-BD-000V XR1006-BD-EV1