UMW8N
Abstract: 2SC3838K T108 T148 UMW7N FMW8 EMT 015
Text: EMX5 / UMW7N / UMW8N / UMX5N / FMW7 / FMW8 / IMX5 Transistors High transition frequency dual transistors EMX5 / UMW7N / UMW8N / UMX5N / FMW7 / FMW8 / IMX5 zFeatures 1) Two 2SC3838K chips in a EMT or UMT or SMT package. 2) High transition frequency. (fT=3.2GHz)
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2SC3838K
SC-74A
SC-88
SC-88A
UMW8N
T108
T148
UMW7N
FMW8
EMT 015
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SC74A
Abstract: transistor w10 SC-74A npn transistor w6 SC-88A marking W8 transistor transistor w10 18 FMG12 marking W10 DTC144EK
Text: D I G I TA L T R A N S I S T O R A R R AY S DUAL COUPLED NPN TRANSISTOR CIRCUITS • COMPLETE SUB–CIRCUITS IN A SINGLE PACKAGE: SAVE PLACEMENT COSTS, INCREASES RELIABILITY • APPLICATIONS INCLUDE: PRE-AMPS, TV TUNERS, MIXER OSCILLATORS, INTERFACING LOGIC,
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UMW10N
FMW10
FMG12
SC-74A
SC-88A
SC-74A
SC-88A,
SC74A
transistor w10
npn transistor w6
marking W8 transistor
transistor w10 18
marking W10
DTC144EK
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autotransformer starter medium voltage
Abstract: H9208 relay HM 810
Text: www.toshiba.com/ind 2013 Toshiba International Corporation • Rev. 130222 Industrial Catalog 2013 13131 W. Little York Road • Houston, TX 77041 Tel: 713-466-0277 Fax: 713-466-8773 US: 800-231-1412 Canada: 800-872-2792 Mexico: 800-527-1204 2013 Industrial Catalog
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ROSA
Abstract: transistor w7 electronic circuit for rosa TIA bonding integrated ROSA PIN-TIA
Text: Application Note: HFAN-3.2.0 Rev.1; 04/08 Improving Noise Rejection of a PIN-TIA ROSA Maxim Integrated Products Improving Noise Rejection of a PIN-TIA ROSA VCC CFILT PD W1 W5 W3A W5 W2 IN OUT- FILT 1 Example of ROSA Assembly W4 CVCC CASE VCC For successful optical transceiver design, it is
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rkm 33 transistor
Abstract: g1k bc848b rkm transistor DTB133HKA DTD133HKA MMST8598 TRANSISTOR MARKING CODE R2A rkm 35 transistor 2SA1885 marking W8 transistor
Text: Abbreviated markings on mini-mold transistors Transistors Abbreviated markings on mini-mold transistors !MPT3 labels The label on the MPT3 packages indicates the product, hFE rank, and month of manufacture using 4 letters. Codes B and AF indicate products.
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IMB11A
IMB16
IMB17A
IMD10A
IMD14
IMD16A
IMH10A
IMH11A
IMH14A
IMH15A
rkm 33 transistor
g1k bc848b
rkm transistor
DTB133HKA
DTD133HKA
MMST8598
TRANSISTOR MARKING CODE R2A
rkm 35 transistor
2SA1885
marking W8 transistor
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DAC8550
Abstract: DAC7512
Text: User's Guide SLAU172A – December 2005 – Revised September 2006 DAC8550/51/52 Evaluation Module This user’s guide describes the characteristics, operation, and the use of the DAC8550/51/52 Evaluation Module. It covers all pertinent areas involved to properly
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SLAU172A
DAC8550/51/52
DAC8550
DAC7512
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113 marking code transistor ROHM
Abstract: DTDS14GP DTB133HKA rkm transistor 2SC5274 datasheet FMC1A rkm 33 transistor FMC1A rkm 24 DTD133HKA
Text: Abbreviated markings on mini-mold transistors Transistors Abbreviated markings on mini-mold transistors !MPT3 labels The label on the MPT3 packages indicates the product, hFE rank, and month of manufacture using 4 letters. Codes B and AF indicate products.
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op amp 7343
Abstract: TRF370x GRM42X5R106K10 3296Y THS4503 TRF3701 TRF3702 16-RHC bourns3296 capacitor 3528
Text: TRF3701/TRF3702 Quadrature Modulator Evaluation Module User’s Guide 2004 Wireless Infrastructure Products SLWU007 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue
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TRF3701/TRF3702
SLWU007
TRF3701/02
3-Jun-2004
op amp 7343
TRF370x
GRM42X5R106K10
3296Y
THS4503
TRF3701
TRF3702
16-RHC
bourns3296
capacitor 3528
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74HCT151
Abstract: 74HC151 multiplexer 74hc151 74HC151D
Text: 74HC151-Q100; 74HCT151-Q100 8-input multiplexer Rev. 2 — 11 February 2013 Product data sheet 1. General description The 74HC151-Q100; 74HCT151-Q100 are 8-bit multiplexer with eight binary inputs I0 to I7 , three select inputs (S0 to S2) and an enable input (E). One of the eight binary inputs is
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74HC151-Q100;
74HCT151-Q100
74HCT151-Q100
HCT151
74HCT151
74HC151 multiplexer
74hc151
74HC151D
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Transistors BZT52C2V4S-BZT52C39S ZENER DIODE FEATURES: z Planar Die Construction z 200mW z General Purpose, Medium Current z Ideally Suited for Automated Assembly Processes z
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OD-323
BZT52C2V4S-BZT52C39S
200mW
BZT52C24S
BZT52C27S
BZT52C30S
BZT52C33S
BZT52C36S
BZT52C39S
BZT52C2V0S-BZT52C39S
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Untitled
Abstract: No abstract text available
Text: J.E.I±E.U 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 MTM12N10 *MTP12N10E Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FETs 12 AMPERES
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MTM12N10
MTP12N10E
O-204)
O-220)
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Untitled
Abstract: No abstract text available
Text: 74HC151-Q100; 74HCT151-Q100 Quad 2-input multiplexer Rev. 1 — 7 August 2012 Product data sheet 1. General description The 74HC151-Q100; 74HCT151-Q100 are 8-bit multiplexer with eight binary inputs I0 to I7 , three select inputs (S0 to S2) and an enable input (E). One of the eight binary inputs is
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74HC151-Q100;
74HCT151-Q100
74HCT151-Q100
HCT151
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Untitled
Abstract: No abstract text available
Text: DAC8541EVM User’s Guide August 2002 Data Acquisition SLAU085A IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue
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DAC8541EVM
SLAU085A
REF02AU
DAC8541
16-Feb-2004
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2SA748
Abstract: 2SC1398 BSBE
Text: Power Transistors 2SA748 2SA748 Silicon PNP Epitaxial Planar Type Package Dim ensions Medium Power Am plifier Com plem entary Pair with 2SC1398 la U nit : mm 1 0 .5 ± 0 .5 • Features £ ,9 .8 m a x . «■a f»» w7 • L arg e c o lle c to r p o w e r d issip a tio n P c
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2SA748
2SC1398
2SA748
2SC1398
BSBE
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5n06
Abstract: w75n06 75n06
Text: SGS-THOMSON 75N 06/fi S T W 7 5 N 06 sth N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V S TH 75N 06 STH75N06FI S TH 75N 06 • • . ■ ■ . ■ ■ dss 60 V 60 V 60 V R DS on Id < 0 .0 1 4 ß < 0 .0 1 4 ß < 0 .0 1 4 ß 75 A 48 A 75 A T Y P IC A L RDS(on) = 0.011 Q
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06/fi
STH75N06FI
O-247
O-218
5n06
w75n06
75n06
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transistor w10
Abstract: marking W8 transistor
Text: UMW6N / UMW1 ON / UMX4N / FMW6 / FMW10 / IMX4 UMW7N / UMW8N / UMX5N / FMW7 / FMW8 / IMX5 Transistors I General Purpose Dual Transistors UMW6N / UMW10N / UMX4N / FMW6 / FMW10 / IMX4 •Features 1 ) Two 2SC3837K chips are housed in a UMT or SMT package. 2 ) High transition frequency. (fT=1.5GHz)
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FMW10
UMW10N
2SC3837K
UMW10N,
FMW10,
200MHz
94S-407-C102)
G01725G
transistor w10
marking W8 transistor
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C102 M transistor
Abstract: marking W8 transistor transistor w7 TRANSISTOR marking code X4 W 6N
Text: UMW6N / UMW10N / UMX4N / FMW6 / FMW101 IMX4 UMW7N / UMW8N / UMX5N / FMW7 / FMW8 / IMX5 Transistors I General Purpose Dual Transistore UMW6N / UMW10N / UMX4N / FMW6 / FMW10 / IMX4 •Features 1 ) Two 2SC3837K chips are housed in a U M T or S M T package.
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UMW10N
FMW10
200mW
2SC3837K
0V/10mA
94S-407-C102}
C102 M transistor
marking W8 transistor
transistor w7
TRANSISTOR marking code X4
W 6N
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sot23 marking y5
Abstract: BZX84C18 FMMD914 FMMD6050 BZX84-C27 BAR99 MARKING W4 sot 23 C3V9 C5V1 c5v6
Text: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION DIODES DIODES Device Type Device Type Device marking Device marking BAL99 E2 BZX84-C43 X6 BAR99 E3 BZX84-C47 X7 BAS16 A3 FMMD914 5D BAV70 A4 FMMD6050 5A BAV74 JA BAV99 A7 BAW56 A1 HD2A 5D HD3A
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OT-23
BAL99
BZX84-C43
BAR99
BZX84-C47
BAS16
FMMD914
BAV70
FMMD6050
BAV74
sot23 marking y5
BZX84C18
FMMD914
FMMD6050
BZX84-C27
BAR99
MARKING W4 sot 23
C3V9
C5V1
c5v6
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marking z7
Abstract: Z4 SOT23 FMMD3102 BZX84C18 C5V6 BZX84C5V6 z3 ZC831 marking Y4 C3V9 FMMD914
Text: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION D IO D ES Device Type D IO D ES Device m arking Device Type Device m arking BAV70 A4 B ZX84-C43 X6 BAV74 JA B ZX84-C47 X7 BAV99 A7 F M M D I0 9 4A BAW 56 A1 FM M D 914 5D B Z X 8 4 C2V7 W4
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OT-23
BAV70
BZX84-C43
BZX84-C47
BAV99
FMMD109
BAW56
FMMD914
BZX84
FMMD3102
marking z7
Z4 SOT23
FMMD3102
BZX84C18
C5V6
BZX84C5V6 z3
ZC831
marking Y4
C3V9
FMMD914
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BS9365
Abstract: BS9302 f025 BAW68 marking Z9 F008 BZX88-C5V1 2N2475 BFS46A BZX88-C5V6
Text: MICRO-E MICRO-E PRODUCT LIST W h ere approval for military use has been obtained the appropriate British Standards number is indicated under B .S . number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A
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BFS36
2N930
BS9365
BAW63
BS9302
BFS36A
2N929
BAW63A
f025
BAW68
marking Z9
F008
BZX88-C5V1
2N2475
BFS46A
BZX88-C5V6
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rkm 33 transistor
Abstract: bkd transistor DTD133HKA BKD C6 DTB133HKA Transistor BJD 2SA1885 rkm 20 transistor 2SC5274 rkm transistor
Text: Transistors Abbreviated label symbols on mini molded type Abbreviated label symbols on mini molded type •E M T 3 and UMT3 labels On general transistors, the product and hpE rank are in dicated by 2 or 3 letters. On digital transistors, the product type is indicated by a 2-digit number.
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FMA10A
FMA11A
IMB10A
IMB11A
IMB16
IMB17A
IMD10A
IMD14
IMD16A
IMH10A
rkm 33 transistor
bkd transistor
DTD133HKA
BKD C6
DTB133HKA
Transistor BJD
2SA1885
rkm 20 transistor
2SC5274
rkm transistor
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transistor w7
Abstract: PJ99
Text: AL L E GRO MI C ROS Y S TE MS I NC ^3 D • 0 5 D4 3 3 Ô 00D3775 S ■ ALGR T -9 1 -0 1 PROCESS PJ99 Process PJ99 P-Channel Junction Field-Effect Transistor Process PJ99 is a P-channel junction field-effect transistor designed as a complement to the NJ99
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00D3775
05D433Ô
0Q0377b
KftA-14
transistor w7
PJ99
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Untitled
Abstract: No abstract text available
Text: TRANSISTOR ARRAY QUAD TH3L1OZ T H series NPM TRANSÌSTOR ARRAY F e a tu r e s • N PN 4 • -i > 7 -Y > ,- i.y t y — • CB F A » , V z = 6 0 ±10V • :*:# V' h 7 > x*x 9tli$<, P t= 3 .5 W • m in.1500 • Quad N PN darlington tran sisto r array • C om pact single in line package, lOpin
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Untitled
Abstract: No abstract text available
Text: N ~7 > V 7* $ /Transistors UMW7N FMW7 UMW7N/FMW7 “ i — JU K h /Dual Mini-Mold Transistor v U n > Epitaxiai Planar NPN Silicon Transistor ÜiJijJfciÄtiffl/RF Amplifier • il- f f i^ 'jiH /D im e n s io n s U n it: mm • W* 1) 3 . Km” 7 * r - vT
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200MHz
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