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    W7 TRANSISTOR Search Results

    W7 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    W7 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    UMW8N

    Abstract: 2SC3838K T108 T148 UMW7N FMW8 EMT 015
    Text: EMX5 / UMW7N / UMW8N / UMX5N / FMW7 / FMW8 / IMX5 Transistors High transition frequency dual transistors EMX5 / UMW7N / UMW8N / UMX5N / FMW7 / FMW8 / IMX5 zFeatures 1) Two 2SC3838K chips in a EMT or UMT or SMT package. 2) High transition frequency. (fT=3.2GHz)


    Original     		PDF 2SC3838K SC-74A SC-88 SC-88A UMW8N T108 T148 UMW7N FMW8 EMT 015

    SC74A

    Abstract: transistor w10 SC-74A npn transistor w6 SC-88A marking W8 transistor transistor w10 18 FMG12 marking W10 DTC144EK
    Text: D I G I TA L T R A N S I S T O R A R R AY S DUAL COUPLED NPN TRANSISTOR CIRCUITS • COMPLETE SUB–CIRCUITS IN A SINGLE PACKAGE: SAVE PLACEMENT COSTS, INCREASES RELIABILITY • APPLICATIONS INCLUDE: PRE-AMPS, TV TUNERS, MIXER OSCILLATORS, INTERFACING LOGIC,


    Original     		PDF UMW10N FMW10 FMG12 SC-74A SC-88A SC-74A SC-88A, SC74A transistor w10 npn transistor w6 marking W8 transistor transistor w10 18 marking W10 DTC144EK

    autotransformer starter medium voltage

    Abstract: H9208 relay HM 810
    Text: www.toshiba.com/ind 2013 Toshiba International Corporation • Rev. 130222 Industrial Catalog 2013 13131 W. Little York Road • Houston, TX 77041 Tel: 713-466-0277 Fax: 713-466-8773 US: 800-231-1412 Canada: 800-872-2792 Mexico: 800-527-1204 2013 Industrial Catalog


    Original     		PDF

    ROSA

    Abstract: transistor w7 electronic circuit for rosa TIA bonding integrated ROSA PIN-TIA
    Text: Application Note: HFAN-3.2.0 Rev.1; 04/08 Improving Noise Rejection of a PIN-TIA ROSA Maxim Integrated Products Improving Noise Rejection of a PIN-TIA ROSA VCC CFILT PD W1 W5 W3A W5 W2 IN OUT- FILT 1 Example of ROSA Assembly W4 CVCC CASE VCC For successful optical transceiver design, it is


    Original     		PDF

    rkm 33 transistor

    Abstract: g1k bc848b rkm transistor DTB133HKA DTD133HKA MMST8598 TRANSISTOR MARKING CODE R2A rkm 35 transistor 2SA1885 marking W8 transistor
    Text: Abbreviated markings on mini-mold transistors Transistors Abbreviated markings on mini-mold transistors !MPT3 labels The label on the MPT3 packages indicates the product, hFE rank, and month of manufacture using 4 letters. Codes B and AF indicate products.


    Original     		PDF IMB11A IMB16 IMB17A IMD10A IMD14 IMD16A IMH10A IMH11A IMH14A IMH15A rkm 33 transistor g1k bc848b rkm transistor DTB133HKA DTD133HKA MMST8598 TRANSISTOR MARKING CODE R2A rkm 35 transistor 2SA1885 marking W8 transistor

    DAC8550

    Abstract: DAC7512
    Text: User's Guide SLAU172A – December 2005 – Revised September 2006 DAC8550/51/52 Evaluation Module This user’s guide describes the characteristics, operation, and the use of the DAC8550/51/52 Evaluation Module. It covers all pertinent areas involved to properly


    Original     		PDF SLAU172A DAC8550/51/52 DAC8550 DAC7512

    113 marking code transistor ROHM

    Abstract: DTDS14GP DTB133HKA rkm transistor 2SC5274 datasheet FMC1A rkm 33 transistor FMC1A rkm 24 DTD133HKA
    Text: Abbreviated markings on mini-mold transistors Transistors Abbreviated markings on mini-mold transistors !MPT3 labels The label on the MPT3 packages indicates the product, hFE rank, and month of manufacture using 4 letters. Codes B and AF indicate products.


    Original     		PDF

    op amp 7343

    Abstract: TRF370x GRM42X5R106K10 3296Y THS4503 TRF3701 TRF3702 16-RHC bourns3296 capacitor 3528
    Text: TRF3701/TRF3702 Quadrature Modulator Evaluation Module User’s Guide 2004 Wireless Infrastructure Products SLWU007 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue


    Original     		PDF TRF3701/TRF3702 SLWU007 TRF3701/02 3-Jun-2004 op amp 7343 TRF370x GRM42X5R106K10 3296Y THS4503 TRF3701 TRF3702 16-RHC bourns3296 capacitor 3528

    74HCT151

    Abstract: 74HC151 multiplexer 74hc151 74HC151D
    Text: 74HC151-Q100; 74HCT151-Q100 8-input multiplexer Rev. 2 — 11 February 2013 Product data sheet 1. General description The 74HC151-Q100; 74HCT151-Q100 are 8-bit multiplexer with eight binary inputs I0 to I7 , three select inputs (S0 to S2) and an enable input (E). One of the eight binary inputs is


    Original     		PDF 74HC151-Q100; 74HCT151-Q100 74HCT151-Q100 HCT151 74HCT151 74HC151 multiplexer 74hc151 74HC151D

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Transistors BZT52C2V4S-BZT52C39S ZENER DIODE FEATURES： z Planar Die Construction z 200mW z General Purpose, Medium Current z Ideally Suited for Automated Assembly Processes z


    Original     		PDF OD-323 BZT52C2V4S-BZT52C39S 200mW BZT52C24S BZT52C27S BZT52C30S BZT52C33S BZT52C36S BZT52C39S BZT52C2V0S-BZT52C39S

    Untitled

    Abstract: No abstract text available
    Text: J.E.I±E.U 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 MTM12N10 *MTP12N10E Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FETs 12 AMPERES


    Original     		PDF MTM12N10 MTP12N10E O-204) O-220)

    Untitled

    Abstract: No abstract text available
    Text: 74HC151-Q100; 74HCT151-Q100 Quad 2-input multiplexer Rev. 1 — 7 August 2012 Product data sheet 1. General description The 74HC151-Q100; 74HCT151-Q100 are 8-bit multiplexer with eight binary inputs I0 to I7 , three select inputs (S0 to S2) and an enable input (E). One of the eight binary inputs is


    Original     		PDF 74HC151-Q100; 74HCT151-Q100 74HCT151-Q100 HCT151

    Untitled

    Abstract: No abstract text available
    Text: DAC8541EVM User’s Guide August 2002 Data Acquisition SLAU085A IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue


    Original     		PDF DAC8541EVM SLAU085A REF02AU DAC8541 16-Feb-2004

    2SA748

    Abstract: 2SC1398 BSBE
    Text: Power Transistors 2SA748 2SA748 Silicon PNP Epitaxial Planar Type Package Dim ensions Medium Power Am plifier Com plem entary Pair with 2SC1398 la U nit : mm 1 0 .5 ± 0 .5 • Features £ ,9 .8 m a x . «■a f»» w7 • L arg e c o lle c to r p o w e r d issip a tio n P c


    OCR Scan     		PDF 2SA748 2SC1398 2SA748 2SC1398 BSBE

    5n06

    Abstract: w75n06 75n06
    Text: SGS-THOMSON 75N 06/fi S T W 7 5 N 06 sth N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V S TH 75N 06 STH75N06FI S TH 75N 06 • • . ■ ■ . ■ ■ dss 60 V 60 V 60 V R DS on Id < 0 .0 1 4 ß < 0 .0 1 4 ß < 0 .0 1 4 ß 75 A 48 A 75 A T Y P IC A L RDS(on) = 0.011 Q


    OCR Scan     		PDF 06/fi STH75N06FI O-247 O-218 5n06 w75n06 75n06

    transistor w10

    Abstract: marking W8 transistor
    Text: UMW6N / UMW1 ON / UMX4N / FMW6 / FMW10 / IMX4 UMW7N / UMW8N / UMX5N / FMW7 / FMW8 / IMX5 Transistors I General Purpose Dual Transistors UMW6N / UMW10N / UMX4N / FMW6 / FMW10 / IMX4 •Features 1 ) Two 2SC3837K chips are housed in a UMT or SMT package. 2 ) High transition frequency. (fT=1.5GHz)


    OCR Scan     		PDF FMW10 UMW10N 2SC3837K UMW10N, FMW10, 200MHz 94S-407-C102) G01725G transistor w10 marking W8 transistor

    C102 M transistor

    Abstract: marking W8 transistor transistor w7 TRANSISTOR marking code X4 W 6N
    Text: UMW6N / UMW10N / UMX4N / FMW6 / FMW101 IMX4 UMW7N / UMW8N / UMX5N / FMW7 / FMW8 / IMX5 Transistors I General Purpose Dual Transistore UMW6N / UMW10N / UMX4N / FMW6 / FMW10 / IMX4 •Features 1 ) Two 2SC3837K chips are housed in a U M T or S M T package.


    OCR Scan     		PDF UMW10N FMW10 200mW 2SC3837K 0V/10mA 94S-407-C102} C102 M transistor marking W8 transistor transistor w7 TRANSISTOR marking code X4 W 6N

    sot23 marking y5

    Abstract: BZX84C18 FMMD914 FMMD6050 BZX84-C27 BAR99 MARKING W4 sot 23 C3V9 C5V1 c5v6
    Text: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION DIODES DIODES Device Type Device Type Device marking Device marking BAL99 E2 BZX84-C43 X6 BAR99 E3 BZX84-C47 X7 BAS16 A3 FMMD914 5D BAV70 A4 FMMD6050 5A BAV74 JA BAV99 A7 BAW56 A1 HD2A 5D HD3A


    OCR Scan     		PDF OT-23 BAL99 BZX84-C43 BAR99 BZX84-C47 BAS16 FMMD914 BAV70 FMMD6050 BAV74 sot23 marking y5 BZX84C18 FMMD914 FMMD6050 BZX84-C27 BAR99 MARKING W4 sot 23 C3V9 C5V1 c5v6

    marking z7

    Abstract: Z4 SOT23 FMMD3102 BZX84C18 C5V6 BZX84C5V6 z3 ZC831 marking Y4 C3V9 FMMD914
    Text: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION D IO D ES Device Type D IO D ES Device m arking Device Type Device m arking BAV70 A4 B ZX84-C43 X6 BAV74 JA B ZX84-C47 X7 BAV99 A7 F M M D I0 9 4A BAW 56 A1 FM M D 914 5D B Z X 8 4 C2V7 W4


    OCR Scan     		PDF OT-23 BAV70 BZX84-C43 BZX84-C47 BAV99 FMMD109 BAW56 FMMD914 BZX84 FMMD3102 marking z7 Z4 SOT23 FMMD3102 BZX84C18 C5V6 BZX84C5V6 z3 ZC831 marking Y4 C3V9 FMMD914

    BS9365

    Abstract: BS9302 f025 BAW68 marking Z9 F008 BZX88-C5V1 2N2475 BFS46A BZX88-C5V6
    Text: MICRO-E MICRO-E PRODUCT LIST W h ere approval for military use has been obtained the appropriate British Standards number is indicated under B .S . number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A


    OCR Scan     		PDF BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A f025 BAW68 marking Z9 F008 BZX88-C5V1 2N2475 BFS46A BZX88-C5V6

    rkm 33 transistor

    Abstract: bkd transistor DTD133HKA BKD C6 DTB133HKA Transistor BJD 2SA1885 rkm 20 transistor 2SC5274 rkm transistor
    Text: Transistors Abbreviated label symbols on mini molded type Abbreviated label symbols on mini molded type •E M T 3 and UMT3 labels On general transistors, the product and hpE rank are in­ dicated by 2 or 3 letters. On digital transistors, the product type is indicated by a 2-digit number.


    OCR Scan     		PDF FMA10A FMA11A IMB10A IMB11A IMB16 IMB17A IMD10A IMD14 IMD16A IMH10A rkm 33 transistor bkd transistor DTD133HKA BKD C6 DTB133HKA Transistor BJD 2SA1885 rkm 20 transistor 2SC5274 rkm transistor

    transistor w7

    Abstract: PJ99
    Text: AL L E GRO MI C ROS Y S TE MS I NC ^3 D • 0 5 D4 3 3 Ô 00D3775 S ■ ALGR T -9 1 -0 1 PROCESS PJ99 Process PJ99 P-Channel Junction Field-Effect Transistor Process PJ99 is a P-channel junction field-effect transistor designed as a complement to the NJ99


    OCR Scan     		PDF 00D3775 05D433Ô 0Q0377b KftA-14 transistor w7 PJ99

    Untitled

    Abstract: No abstract text available
    Text: TRANSISTOR ARRAY QUAD TH3L1OZ T H series NPM TRANSÌSTOR ARRAY F e a tu r e s • N PN 4 • -i > 7 -Y > ,- i.y t y — • CB F A » , V z = 6 0 ±10V • :*:# V' h 7 > x*x 9tli$<, P t= 3 .5 W • m in.1500 • Quad N PN darlington tran sisto r array • C om pact single in line package, lOpin


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: N ~7 > V 7* $ /Transistors UMW7N FMW7 UMW7N/FMW7 “ i — JU K h /Dual Mini-Mold Transistor v U n > Epitaxiai Planar NPN Silicon Transistor ÜiJijJfciÄtiffl/RF Amplifier • il- f f i^ 'jiH /D im e n s io n s U n it: mm • W* 1) 3 . Km” 7 * r - vT


    OCR Scan     		PDF 200MHz