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    WAFER 60G Search Results

    WAFER 60G Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    RJP1CS07DWA-00#W0 Renesas Electronics Corporation IGBT 1250V 150A Wafer Visit Renesas Electronics Corporation
    RJP65S08DWA-00#W0 Renesas Electronics Corporation IGBT 650V 200A Wafer Visit Renesas Electronics Corporation
    RJP1CS05DWA-80#W0 Renesas Electronics Corporation IGBT 1250V 75A Wafer Visit Renesas Electronics Corporation
    RJP65S03DWA-80#W0 Renesas Electronics Corporation IGBT 650V 30A Wafer Visit Renesas Electronics Corporation
    RJP1CS01DWA-80#W0 Renesas Electronics Corporation IGBT 1250V 15A Wafer Visit Renesas Electronics Corporation

    WAFER 60G Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    60Ghz transistor

    Abstract: 60Ghz CHA2157
    Text: CHA2157 55-60GHz Low Noise / Medium Power Amplifier GaAs Monolithic Microwave IC Description The circuit is manufactured with a HEMT process, 0.15µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form.


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    CHA2157 55-60GHz CHA2157 10ies DSCHA21579090 60Ghz transistor 60Ghz PDF

    60Ghz

    Abstract: CHA2157
    Text: CHA2157 RoHS COMPLIANT 55-60GHz Low Noise / Medium Power Amplifier GaAs Monolithic Microwave IC Description The circuit is manufactured with a pHEMT process, 0.15µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.


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    CHA2157 55-60GHz CHA2157 DSCHA21577150 60Ghz PDF

    60Ghz

    Abstract: CHA2157
    Text: CHA2157 RoHS COMPLIANT 55-60GHz Low Noise / Medium Power Amplifier GaAs Monolithic Microwave IC Description The circuit is manufactured with a HEMT process, 0.15µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.


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    CHA2157 55-60GHz CHA2157 DSCHA21577150 60Ghz PDF

    Untitled

    Abstract: No abstract text available
    Text: CHA2157 RoHS COMPLIANT 55-60GHz Low Noise / Medium Power Amplifier GaAs Monolithic Microwave IC Description The circuit is manufactured with a pHEMT process, 0.15µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.


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    CHA2157 55-60GHz CHA2157 DSCHA21577150 PDF

    K745

    Abstract: PCS1900 TQD714006 TQD764022 TQM7M4022 W9-081 PAA 725
    Text: TQD764022 Preliminary Data Sheet DCS/PCS Power Amplifier Die Functional Block Diagram Vcon Vcon Vcc1 Vcc2 Features Vcc2 • • • • W90815 PAA Bias circuitry Input match ESD protection RFout DCS/PCS ESD protection RFin DCS/PCS High Efficiency 50 Ω input and output impedances


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    TQD764022 W90815 TQD764022 TQM7M4022 K745 PCS1900 TQD714006 W9-081 PAA 725 PDF

    INCOMING RAW MATERIAL INSPECTION checklist

    Abstract: INCOMING RAW MATERIAL INSPECTION procedure STORES RECEIVED RAW MATERIAL CHECK LIST INCOMING RAW MATERIAL INSPECTION INCOMING RAW MATERIAL INSPECTION method raw material control log sheet INCOMING RAW MATERIAL flowchart INCOMING RAW MATERIAL INSPECTION chart plate INCOMING RAW MATERIAL INSPECTION procedure INCOMING RAW MATERIAL INSPECTIONs
    Text: QUALITY ASSURANCE PROGRAM QUALITY ASSURANCE PROGRAM At Linear Technology Corporation LTC our overriding commitment is to achieve excellence in Quality, Reliability and Service (QRS) and total customer satisfaction. We interpret the word “excellence” to mean delivering products that consistently exceed all the requirements and


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    K745

    Abstract: capacitor shc P743
    Text: TQD714022 Preliminary Data Sheet GSM800/900 Power Amplifier Die Features Functional Block Diagram DC V T T • • • • V V W Bi R High Efficiency 50 Ω input and output impedances High Reliability InGaP technology 10:1 Ruggedness RF E E Applications I


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    TQD714022 GSM800/900 TQD714022 TQM7M4022 K745 capacitor shc P743 PDF

    Untitled

    Abstract: No abstract text available
    Text: GaAs & GaN Build your own solution with UMS FOUNDRY SERVICES UMS has developed a proven family of III-V based processes for high performance low noise and high power MMICs. These processes are extensively used by foundry customers and by UMS to offer MMIC solutions for the Defence,


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    TS16949. PDF

    darfon

    Abstract: synaptics PA1900-04 ST94019A T60M283 MK8025GAS delta adp-90sb darfon diagram Sumida LCD Inverter T60M665
    Text: Chapter 6 FRU Field Replaceable Unit List This chapter gives you the FRU (Field Replaceable Unit) listing in global configurations of Aspire 3010/5010. Refer to this chapter whenever ordering for parts to repair or for RMA (Return Merchandise Authorization).


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    T30V1 TM41P-357 A30V1 R-40/O 9A524 00B54 9A353 darfon synaptics PA1900-04 ST94019A T60M283 MK8025GAS delta adp-90sb darfon diagram Sumida LCD Inverter T60M665 PDF

    CHX2192

    Abstract: CHX2192-99F frequency multiplier
    Text: CHX2192 RoHS COMPLIANT 30-60GHz Frequency Multiplier GaAs Monolithic Microwave IC Description The CHX2192 is a balanced frequency multiplier by 2 monolithic circuit. It is designed for a wide range of applications, from military to commercial communication


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    CHX2192 30-60GHz CHX2192 11dBm 12dBm 130mA DSCHX21924015 CHX2192-99F frequency multiplier PDF

    csp defects

    Abstract: 13B1 IMT-2000 PCB design for very fine pitch csp package mitsubishi gaAs 1998 plasma display address electrode driving
    Text: The Dawn of 3D Packaging as System-in-Package SIP Morihiro Kada Abstract The three-dimensional chip-stacked CSP, which started with a flash/SRAM combination memory for cellular phones, was the forerunner from which 3D system packages realize full-scale capability. In the future, 3D package technology will act as a savior in achieving greater shrink of


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    CHX2192

    Abstract: frequency multiplier 60Ghz 60GHz transistor "Frequency Multiplier"
    Text: CHX2192 RoHS COMPLIANT 30-60GHz Frequency Multiplier GaAs Monolithic Microwave IC Description The CHX2192 is a balanced frequency multiplier by 2 monolithic circuit. It is designed for a wide range of applications, from military to commercial communication


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    CHX2192 30-60GHz CHX2192 11dBm 12dBm 130mA DSCHX21924015 frequency multiplier 60Ghz 60GHz transistor "Frequency Multiplier" PDF

    60Ghz

    Abstract: ID130 60GHz transistor CHX2192 max3366
    Text: CHX2192 RoHS COMPLIANT 30-60GHz Frequency Multiplier GaAs Monolithic Microwave IC Description The CHX2192 is a by 2 frequency multiplier monolithic circuit. It is designed for a wide range of applications, from military to commercial communication systems. The backside of


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    CHX2192 30-60GHz CHX2192 27-33GHz 11dBm 12dBm 130mA DSCHX21920204 60Ghz ID130 60GHz transistor max3366 PDF

    Untitled

    Abstract: No abstract text available
    Text: CHX2192 RoHS COMPLIANT 30-60GHz Frequency Multiplier GaAs Monolithic Microwave IC Description The CHX2192 is a by 2 frequency multiplier monolithic circuit. It is designed for a wide range of applications, from military to commercial communication systems. The backside of


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    CHX2192 30-60GHz CHX2192 27-33GHz 11dBm 12dBm 130mA DSCHX21920204 PDF

    ImS21

    Abstract: FMA3011 15100000 214-3556 2068d
    Text: FMA3011 Datasheet v4.0 12.7-16GHZ MMIC POWER AMPLIFIER FUNCTIONAL SCHEMATIC: FEATURES: • • • • • Balanced Topology 37dBm OIP3 30dB Gain Input Return Loss <-15dB Output Return Loss <-15dB VDD RF Input RF Output GENERAL DESCRIPTION: The FMA3011 is a high performance 12.716GHz Gallium Arsenide monolithic power


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    FMA3011 7-16GHZ 37dBm -15dB FMA3011 716GHz ImS21 15100000 214-3556 2068d PDF

    RISC-Processor s3c2410

    Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
    Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH


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    BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B PDF

    FMA3014

    Abstract: MIL-HDBK-263
    Text: FMA3014 FMA3014 12.7GHZ TO 16GHZ MMIC LIMITING AMPLIFIER Package Style: Bare Die Product Description Features The FMA3014 is a high performance 12.7GHz to 16GHz Gallium Arsenide monolithic amplifier. It is suitable for use in broadband communication and electronic


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    FMA3014 16GHZ FMA3014 17dBm -15dB -12dB FMA3014-000 MIL-HDBK-263 PDF

    Untitled

    Abstract: No abstract text available
    Text: FMA3014 FMA3014 12.7GHZ TO 16GHZ MMIC LIMITING AMPLIFIER Package Style: Bare Die NOT FOR NEW DESIGNS Product Description Features The FMA3014 is a high performance 12.7GHz to 16GHz Gallium Arsenide monolithic amplifier. It is suitable for use in broadband communication and electronic


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    FMA3014 16GHZ FMA3014 FMA3014-000 FMA3014-000SQ FMA3014-000S3 DS110304 PDF

    wafer 60g

    Abstract: ati 4350* circuit
    Text: FMA3014 FMA3014 12.7GHZ TO 16GHZ MMIC LIMITING AMPLIFIER Package Style: Bare Die NOT FOR NEW DESIGNS Product Description Features The FMA3014 is a high performance 12.7GHz to 16GHz Gallium Arsenide monolithic amplifier. It is suitable for use in broadband communication and electronic


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    FMA3014 16GHZ FMA3014 17dBm -15dB -12dB 22-A114. wafer 60g ati 4350* circuit PDF

    wafer 60g

    Abstract: 011028 214-3556
    Text: FMA3011 FMA3011 12.7GHZ TO 16GHZ MMIC POWER AMPLIFIER Package Style: Bare Die NOT FOR NEW DESIGNS Product Description Features The FMA3011 is a high performance 12.7GHz to 16GHz Gallium Arsenide monolithic power amplifier with sufficiently high gain to ensure that IMD products from


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    FMA3011 16GHZ FMA3011 22A114. MIL-STD-1686 MIL-HDBK-263. FMA3011-000 FMA3011-000SQ wafer 60g 011028 214-3556 PDF

    FMA3011

    Abstract: HEMT MMIC POWER AMPLIFIER MIL-HDBK-263 15 GHz power amplifier Output Power 37dBm 2068 d 05332 214-3556
    Text: FMA3011 FMA3011 12.7GHZ TO 16GHZ MMIC POWER AMPLIFIER Package Style: Bare Die Product Description Features The FMA3011 is a high performance 12.7GHz to 16GHz Gallium Arsenide monolithic power amplifier with sufficiently high gain to ensure that IMD products from


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    FMA3011 16GHZ FMA3011 FMA3011-000 DS090306 FMA3011-000SQ FMA3011-000S3 HEMT MMIC POWER AMPLIFIER MIL-HDBK-263 15 GHz power amplifier Output Power 37dBm 2068 d 05332 214-3556 PDF

    Untitled

    Abstract: No abstract text available
    Text: u n ite d m o n o lith ic sem ico n d u cto rs CHA2157 55-60GHz Low Noise / Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA2157 is a two stages low noise and medium power amplifier. It is designed for a wide range of applications, from military to


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    CHA2157 55-60GHz CHA2157 DSCHA21579027 PDF

    Untitled

    Abstract: No abstract text available
    Text: ftg g N O TES 10 '- C H 0 B S D -53263-* 10 CM RE DETAILED DIMENSION , SEE SD-53263-* 10 : 1 o o o m / 'j- n NUMBER OF CONNECTORS : IOOOPCS/REEL U—K x — LEAD TAPE LENGTH :a . c/i h - y y y —y Y ' v y y —y u - ^ - s is g ia m u s a IT5±25 25±5 TOP TAPE


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    SD-53263-* 60gfMAX. SD-53263-002 MXJ-32 PDF

    mmic p07

    Abstract: hp mmic p07
    Text: MICROWAVE GaAs STANDARD FOUNDRY SERVICE 1 - STANDARD FOUNDRY SERVICE 1.1. BASIC FOUNDRY SERVICE T he standard approa ch en ables a single cu sto ­ m er to im ple m en t one or several chip designs o r d e s ig n v a r ia tio n s on a s a m e re tic le an d


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    ldss/100 ldss/100 mmic p07 hp mmic p07 PDF