Untitled
Abstract: No abstract text available
Text: Wafer and Die Information Sheet Memory and Wireless / RF Products Features Level 1 • Async SRAMs, dual ports, FIFOs, micropower SRAMs, PROMs, sync SRAMs wafer and die, WirelessUSB LP wafer ■ Wafer ❐ Standard wafer 25 to 30 mil thick ❐ Background wafer to 14 mil thick
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: Wafer and Die Information Sheet Memory and Wireless / RF Products Features Level 2 • Async SRAMs, dual ports, FIFOs, micropower SRAMs, PROMs, sync SRAMs wafer and die, WirelessUSB LP wafer ■ Wafer ❐ Standard wafer 25 to 30 mil thick ❐ Background wafer to 14 mil thick
|
Original
|
PDF
|
|
SPANSION date code format
Abstract: AM29 T0003 Am29f 405 gde 8 905 959 252
Text: Chapter 8 Die and Wafer Shipments CHAPTER 8 DIE AND WAFER SHIPMENTS Introduction Product Carrier Guide for Die and Wafers Storage Conditions for Die and Wafer Carrier Designs for Singulated Die Waffle Pack Surftape and Reel Carrier Designs for Wafers Wafer Jar
|
Original
|
PDF
|
|
AM29
Abstract: 29f800bb AMD xp
Text: u Chapter 11 Die and Wafer Shipments CHAPTER 11 DIE AND WAFER SHIPMENTS Introduction Product Carrier Guide for Die and Wafers Carrier Designs for Singulated Die Waffle Pack Surftape and Reel GEL-PAK Die Tray Carrier Designs for Wafers Wafer Jar GEL-PAK Wafer Tray
|
Original
|
PDF
|
|
Standard Wafer Eval
Abstract: Mil-Std-105D MIL-STD-105-D MIL-STD105D GaAs wafer
Text: PERFORMANCE GRADING AND SCREENING OPTIONS FOR MwT GaAs FETS LEGEND Wafer Evaluation Die Optional Standard Wafer Evaluation Evaluation Sample RF & DC Audit 40 Dice Min. MwT-2M0903 Process Wafer Stabilization Bake 300°C for 5 hours 100% DC Probe Scribe and Break
|
Original
|
PDF
|
MwT-2M0903)
2M0903)
MIL-STD-105D)
Standard Wafer Eval
Mil-Std-105D
MIL-STD-105-D
MIL-STD105D
GaAs wafer
|
F37011
Abstract: No abstract text available
Text: TN0055 Technical note SRI4K die description Product information ● Product name: SRI4K ● Die code: P117ZMY Wafer and die features October 2007 Wafer diameter 8" Wafer thickness 180 µm Die technology F6SPs40s 3M 1P Diffusion Plant Chartered Die identification
|
Original
|
PDF
|
TN0055
P117ZMY
F6SPs40s
F37011
F37011
|
smd ag zener
Abstract: melf zener diode smd CLL4148 zener wafer bzx84c C1N4148 C1N414 CBZX85C
Text: Continental Device India Limited An ISO/TS 16949 and ISO 9001 Certified Company DICE/DIFFUSED SILICON WAFERS FOR DIODES ! Type : Switching and Zener Diodes voltage range 4.7 V to 47 V . ! Technology : Silicon Planar ! Wafer Size : 4” wafer with primary flat
|
Original
|
PDF
|
OT-23
C-120
smd ag zener
melf zener diode smd
CLL4148
zener wafer
bzx84c
C1N4148
C1N414
CBZX85C
|
MMBT4403
Abstract: No abstract text available
Text: PRODUCT CHANGE NOTICE DCS/PCN-1127 Contact Date: Implementation Date: Alert Category: Alert Type: PCN #: November 13, 2008 February 11, 2009 Discrete Semiconductor Alternate Wafer Fab PCN #: 1127 TITLE Qualification of FabTech as additional wafer fab source for discrete devices
|
Original
|
PDF
|
DCS/PCN-1127
PCN-1127
PCN-1127
BC847BLP-7
BAT42WS-13
BAT42WS-7
BAT42WS-7-F
BAT43WS-13
BAT43WS-7
BAT43WS-7-F
MMBT4403
|
ZHCS1006TA
Abstract: bat54ata
Text: PCN-1122 PRODUCT CHANGE NOTICE Contact Date: Implementation Date: Alert Category: Alert Type: PCN #: November 30, 2008 January 01, 2009 Schottky Diodes Additional wafer manufacturing location PCN #: 1122 TITLE Introduction of additional wafer manufacturing location DFT for Zetex schottky diodes
|
Original
|
PDF
|
PCN-1122
ZX3CD1S1M832TA
ZLLS350TA
ZLLS400TA
ZLLS410TA
ZLLS500TA
ZLLS2000TA
ZX3CD2S1M832TA
ZX3CD3S1M832TA
ZX3CDBS1M832TA
ZHCS1006TA
bat54ata
|
MDC 2301
Abstract: 74ACT04 J330 LM108 MIL-HDBK-263 National semiconductor die fr003 NSC die
Text: Name: ME MAS-2301 Department Specification Title:" GENERAL PROCEDURE FOR DIE AND WAFER SALES " Rev:"2.0" Page: 1 TABLE OF CONTENTS 1. PURPOSE 2 2. APPLICABLE DOCUMENTS 2 3. GENERAL INFORMATION 2 4. DIE AND WAFER PACKAGING SPECIFICATIONS 3 5. GENERAL INSPECTION CRITERIA
|
Original
|
PDF
|
MAS-2301
MDC 2301
74ACT04
J330
LM108
MIL-HDBK-263
National semiconductor die
fr003
NSC die
|
Untitled
Abstract: No abstract text available
Text: Am29LV200B Known Good Wafer Data Sheet Retired Product Am29LV200B Known Good Wafer Cover Sheet This product has been retired and is not recommended for designs. Please contact your Spansion representative for alternates. Availability of this document is retained for reference and historical purposes only.
|
Original
|
PDF
|
Am29LV200B
|
SBR2U30P1
Abstract: SBR02U100LP-7 DMS2120LFWB SBR1U150SA SBR20100CT SBR10100CTB
Text: PRODUCT CHANGE NOTICE Initial DCS/PCN-1144 Rev 00 Final Final Contact Date: Implementation Date: Alert Category: Alert Type: PCN #: August 6, 2009 November 4, 2009 Discrete Semiconductors Additional Wafer Fab Sources PCN #:1144 REV 00 FINAL TITLE Qualification of additional wafer fabrication sources
|
Original
|
PDF
|
DCS/PCN-1144
source50CT
SBR30A50CTFP
SBR30A60CT
SBR30A60CTB-13
SBR30A60CTFP
SBR30M100CT
SBR30M100CTFP
SBR30M120CT
SBR30S30CT
SBR2U30P1
SBR02U100LP-7
DMS2120LFWB
SBR1U150SA
SBR20100CT
SBR10100CTB
|
BC847BVN
Abstract: No abstract text available
Text: PRODUCT CHANGE NOTICE Initial DCS/PCN-1148 Rev 00 Final Contact Date: Implementation Date: Alert Category: Alert Type: PCN #: 24 November, 2009 22 February, 2010 Discrete Semiconductors Additional Wafer Fab Source PCN #: 1148 REV 00 TITLE Qualification of Diodes FabTech as an additional wafer fabrication source
|
Original
|
PDF
|
DCS/PCN-1148
DLPT05-7-F
MMBD2004SW-7-F
MMSTA92-7-F
BAS21DW-7
BAV23S-7-F
DXT651-13
MMBD3004A-7-F
SDM03U40-7
BAS21T-7-F
BC847BVN
|
IXDN0018
Abstract: MOSFET and IGBT die and 150 mm wafer products IGBT die
Text: IXDN0018 3540 Bassett Street Santa Clara, CA 95054, USA Phone: +1-408-982-0700 Fax: +1-408-727-7087 October 16, 2003 MOSFET and IGBT die and 150 mm wafer products Customer: Various IXYS product type: MOSFET and IGBT die and 150 mm wafer products. Description of changes:
|
Original
|
PDF
|
IXDN0018
IXDN0018
MOSFET and IGBT die and 150 mm wafer products
IGBT die
|
|
|
8050 equivalent
Abstract: No abstract text available
Text: SUPPLEMENT Am29LV400B Known Good Wafer 4 Megabit 512 K x 8-Bit/256 K x 16-Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revision 1 Note: This supplement contains information on the Am29LV400B in Known Good Wafer form. Refer to the Am29LV400B standard datasheet (publication 21523) for full electrical specifications.
|
Original
|
PDF
|
Am29LV400B
8-Bit/256
16-Bit)
20-year
8050 equivalent
|
Untitled
Abstract: No abstract text available
Text: SUPPLEMENT Am29LV800B Known Good Wafer 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory—Die Revision 2 Note: This supplement contains information on the Am29LV800B in Known Good Wafer form. Refer to the Am29LV800B standard datasheet (publication 21490) for full electrical specifications.
|
Original
|
PDF
|
Am29LV800B
8-Bit/512
16-Bit)
20-year
|
Untitled
Abstract: No abstract text available
Text: SB 3100 SCHOTTKY DIE SPECIFICATION General Description: 100 V 3 A 5Standard □Low VF， ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current Maximum Instantaneous Forward Voltage
|
Original
|
PDF
|
SB3100
25mil)
|
Untitled
Abstract: No abstract text available
Text: SB 5100 SCHOTTKY DIE SPECIFICATION General Description: 100 V 5 A 5Standard □Low VF， ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current Maximum Instantaneous Forward Voltage
|
Original
|
PDF
|
SB5100
96mil)
|
SB360 diode
Abstract: SB360
Text: Micro-Electro-Magnetical Tech Co. SCHOTTKY DIE SPECIFICATION General Description: 60 V TYPE: SB360 Single Anode 3A Standard VF ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA for wafer form Ir=0.5mA (for dice form) Average Rectified Forward Current
|
Original
|
PDF
|
SB360
14mil)
SB360 diode
SB360
|
Untitled
Abstract: No abstract text available
Text: SB 2100 SCHOTTKY DIE SPECIFICATION General Description: 100 V 2 A 5Standard □Low VF， ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current Maximum Instantaneous Forward Voltage
|
Original
|
PDF
|
SB2100
18mil)
|
DSA009923
Abstract: No abstract text available
Text: SB 1040 SCHOTTKY DIE SPECIFICATION General Description: 40 V 10 A 5Standard □Low VF， ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current Maximum Instantaneous Forward Voltage
|
Original
|
PDF
|
SB1040
96mil)
DSA009923
|
Untitled
Abstract: No abstract text available
Text: SB 10100 SCHOTTKY DIE SPECIFICATION General Description: 100 V 10 A 5Standard □Low VF， ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current Maximum Instantaneous Forward Voltage
|
Original
|
PDF
|
SB10100
96mil)
|
Untitled
Abstract: No abstract text available
Text: DICE FORM Waffle pack cavity plate Suffix D2: dice in cavity plate Wafer pack Suffix D1: wafer tested and inked Suffix D3: wafer tested, inked and scribed at 70% Circle pack Suffix D4: wafer tested inked and scribed at 100% / I T SGS-THOMSON 683
|
OCR Scan
|
PDF
|
|
RLA120
Abstract: RLA80 8 resistor array 10k dip breadboard RLA Linear Array applications manual, Raytheon raytheon analog 24 pin dip MIL GRADE TRANSISTOR ARRAY raytheon transistor raytheon rla bipolar transistor tester RAYTHEON
Text: Sing!e ucpy RLA Linear Macrocell Array Semicustom Program Handle With Care Services Offered: • ■ ■ ■ ■ Photo mask layout Wafer fabrication Package assembly Testing — wafer and package Reliability screening — commercial and military ■ Technical aid
|
OCR Scan
|
PDF
|
24-lead
28-pad
28-pin
44-pad
44-pin
RLA120
RLA80
8 resistor array 10k dip breadboard
RLA Linear Array applications manual, Raytheon
raytheon analog 24 pin dip
MIL GRADE TRANSISTOR ARRAY
raytheon transistor
raytheon rla
bipolar transistor tester
RAYTHEON
|
