2N7002K
Abstract: E5 marking sot23 6 wc sot23 marking EA SOT23 E2- marking h8 marking sot23 marking JB E5 Marking Marking E5 JA MARKING SOT23
Text: SEMICONDUCTOR 2N7002K MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 1 No. WC 0 1 2. Marking 2 Item Marking Description Device Mark WC 2N7002K * Lot No. 01 Manufacturing date Year/Week Note) * Lot No. marking method * : Lot No. marking method
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2N7002K
OT-23
2N7002K
E5 marking sot23
6 wc sot23
marking EA SOT23
E2- marking
h8 marking
sot23 marking JB
E5 Marking
Marking E5
JA MARKING SOT23
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SOT23 JEDEC standard orientation
Abstract: w3 sot23 D0 sot23 CBVK741B019 F63TNR MMSZ5221B SOT23-3L JEDEC standard
Text: SOT-23 Std Tape and Reel Data SOT23-3L Packaging Configuration: Figure 1.0 Customized Label Packaging Description: SOT23-3L parts are shipped in tape. The carrier tape is made from a dissipative carbon filled polycarbonate resin. The cover tape is a multilayer film (Heat Activated
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OT-23
OT23-3L
177cm
330cm
SOT23 JEDEC standard orientation
w3 sot23
D0 sot23
CBVK741B019
F63TNR
MMSZ5221B
SOT23-3L JEDEC standard
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5630 SOT23
Abstract: FDN5630
Text: FDN5630 60V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. This MOSFET features very low RDS ON in a small SOT23
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FDN5630
5630 SOT23
FDN5630
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5630 PKG
Abstract: 5630 SOT23 marking code 10 sot23 FDN5630
Text: FDN5630 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. This MOSFET features very low RDS ON in a small SOT23
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FDN5630
5630 PKG
5630 SOT23
marking code 10 sot23
FDN5630
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5630 PKG
Abstract: FDN5630 sot23 footprint
Text: FDN5630 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. This MOSFET features very low RDS ON in a small SOT23
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FDN5630
5630 PKG
FDN5630
sot23 footprint
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MMBT2222A
Abstract: PN2222A PZT2222A
Text: MMBT2222A PZT2222A C C E E C B C TO-92 B B SOT-23 E SOT-223 Mark: 1P NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. Absolute Maximum Ratings* Symbol
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MMBT2222A
PZT2222A
OT-23
OT-223
MMBT2222A
PN2222A
PZT2222A
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Code sot-23 on semiconductor
Abstract: wc sot23 rd sot23
Text: SOT-23 Tape and Reel Data SOT-23 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: SOT-23 parts are shipped in tape. The carrier tape is made from a dissipative carbon filled polycarbonate resin. The cover tape is a multilayer film (Heat Activated
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OT-23
177cm
330cm
Code sot-23 on semiconductor
wc sot23
rd sot23
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BCR133
Abstract: BCR133F BCR133L3 SEMH11
Text: BCR133./SEMH11 NPN Silicon Digital Transistor • Switching in circuit, inverter, interface circuit, drive circuit • Built in bias resistor R1 = 10 kΩ, R2 = 10 kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching
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BCR133.
/SEMH11
BCR133/F/L3
BCR133T/W
BCR133S/U
SEMH11
EHA07184
EHA07174
BCR133
BCR133F
BCR133
BCR133F
BCR133L3
SEMH11
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Untitled
Abstract: No abstract text available
Text: Package Information SOT-23 Tape and Reel Data and Package Dimensions SOT-23 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: SOT-23 parts are shipped in tape. The carrier tape is made from a dissipative carbon filled polycarbonate
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OT-23
177cm
330cm
OT-23
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Untitled
Abstract: No abstract text available
Text: BCR133./SEMH11 NPN Silicon Digital Transistor • Switching in circuit, inverter, interface circuit, drive circuit • Built in bias resistor R1 = 10 kΩ, R2 = 10 kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching
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BCR133.
/SEMH11
BCR133/F/L3
BCR133T/W
BCR133S/U
SEMH11
EHA07184
EHA07174
BCR133
BCR133F
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MPSA65
Abstract: CBVK741B019 F63TNR MMBTA65 MPSA64 PN2222N PZTA65 bel 188 transistor
Text: MMBTA65 PZTA65 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2W PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*
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MMBTA65
PZTA65
OT-23
OT-223
MPSA64
OT-223
MPSA65
CBVK741B019
F63TNR
MMBTA65
PN2222N
PZTA65
bel 188 transistor
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smd j3y
Abstract: SOT89 MARKING CODE SMD MARKING CODE j3y SOT-23 J3Y j3y smd smd code marking wl sot23 k72 sot-23 marking f5 sot-89 smd 2TY SOT-23 MARKING ka6
Text: Micro Commercial Components Corp. Marking Code For MCC's SMD Devices PN# 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 1SS226 1SS355 1SS357 1SS389 1SS400 1SS404 2N7002 2N7002DW 2SA1037-Q 2SA1037-R 2SA1037-S 2SA1162-GR 2SA1162-O
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1N4148W
1N4148WX
1N4148X
1N4448W
1N4448WX
1N4448X
1N914W
1SS181
1SS184
1SS193
smd j3y
SOT89 MARKING CODE
SMD MARKING CODE j3y
SOT-23 J3Y
j3y smd
smd code marking wl sot23
k72 sot-23
marking f5 sot-89
smd 2TY
SOT-23 MARKING ka6
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CBVK741B019
Abstract: F63TNR MMBTA13 MPSA13 MPSA14 PN2222N PZTA13
Text: MMBTA13 PZTA13 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1M NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics.
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MMBTA13
PZTA13
OT-23
OT-223
MPSA14
CBVK741B019
F63TNR
MMBTA13
MPSA13
PN2222N
PZTA13
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25c reference top mark sot23
Abstract: sot23 A63
Text: MMBTA63 PZTA63 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2U PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*
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MPSA63
MMBTA63
PZTA63
MPSA63
MMBTA63
OT-23
OT-223
MPSA64
25c reference top mark sot23
sot23 A63
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Untitled
Abstract: No abstract text available
Text: BCR133./SEMH11 NPN Silicon Digital Transistor • Switching in circuit, inverter, interface circuit, drive circuit • Built in bias resistor R1 = 10 kΩ, R2 = 10 kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching
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BCR133.
/SEMH11
BCR133/F/L3
BCR133T/W
BCR133S/U
SEMH11
EHA07184
EHA07174
BCR133
BCR133F
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Untitled
Abstract: No abstract text available
Text: MMBTA65 PZTA65 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2W PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*
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MPSA65
MMBTA65
PZTA65
MPSA65
MMBTA65
OT-23
OT-223
MPSA64
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FAIRCHILD SOT-23 MARK 1a
Abstract: BC846 SOT23 NPN sot23 mark NF 847C BC846 BC846A BC846B BC847 BC847A fAIRCHILD BC847b
Text: BC847A BC847B BC847C C C E SOT-23 BC846A / BC846B / BC847A / BC847B / BC847C BC846A BC846B E B B SOT-23 Mark: 1A. / 1B. Mark: 1E. / 1F. / 1G. NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1.0 µA to 50 mA.
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BC847A
BC847B
BC847C
OT-23
BC846A
BC846B
BC847A
BC847B
BC846A
FAIRCHILD SOT-23 MARK 1a
BC846 SOT23
NPN sot23 mark NF
847C
BC846
BC847
fAIRCHILD BC847b
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transistor bel 100
Abstract: bel 188 transistor CBVK741B019 F63TNR MMBTA14 MPSA14 PN2222N PZTA14
Text: MMBTA14 PZTA14 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1N NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Absolute Maximum Ratings* Symbol
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MMBTA14
PZTA14
OT-23
OT-223
transistor bel 100
bel 188 transistor
CBVK741B019
F63TNR
MMBTA14
MPSA14
PN2222N
PZTA14
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BEL 188 pnp TRANSISTOR characteristics
Abstract: bel 188 transistor pnp transistor bel 188 bel 188 transistor pnp Darlington transistor to 92 CBVK741B019 F63TNR MMBTA64 MPSA64 PN2222N
Text: MMBTA64 PZTA64 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2V PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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MMBTA64
PZTA64
OT-23
OT-223
BEL 188 pnp TRANSISTOR characteristics
bel 188 transistor
pnp transistor bel 188
bel 188 transistor pnp
Darlington transistor to 92
CBVK741B019
F63TNR
MMBTA64
MPSA64
PN2222N
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BEL 188 pnp TRANSISTOR characteristics
Abstract: bel 188 transistor pnp pnp transistor bel 188 F63TNR MMBTA64 MPSA64 PN2222N PZTA64 CBVK741B019 bel 188 transistor
Text: MMBTA64 PZTA64 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2V PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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MMBTA64
PZTA64
OT-23
OT-223
BEL 188 pnp TRANSISTOR characteristics
bel 188 transistor pnp
pnp transistor bel 188
F63TNR
MMBTA64
MPSA64
PN2222N
PZTA64
CBVK741B019
bel 188 transistor
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Untitled
Abstract: No abstract text available
Text: MMBTA92 PZTA92 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2D PNP High Voltage Amplifier This device is designed for high voltage driver applications. Sourced from Process 76. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter
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MMBTA92
PZTA92
OT-23
OT-223
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FAIRCHILD SOT-223 MARK
Abstract: MMBTA28 PN2222N CBVK741B019 F63TNR MPSA28 PZTA28 npn transistor wc
Text: MMBTA28 PZTA28 C C E E C B TO-92 SuperSOT-3 E C B B SOT-223 Mark: 3SS NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 500 mA. Sourced from Process 03. Absolute Maximum Ratings*
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MMBTA28
PZTA28
OT-223
FAIRCHILD SOT-223 MARK
MMBTA28
PN2222N
CBVK741B019
F63TNR
MPSA28
PZTA28
npn transistor wc
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MPSA42
Abstract: MPSA42 sot-223 CBVK741B019 F63TNR MMBTA42 PN2222N PZTA42 bsrxx
Text: MMBTA42 PZTA42 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1D NPN High Voltage Amplifier This device is designed for application as a video output to drive color CRT and other high voltage applications. Sourced from Process 48. Absolute Maximum Ratings*
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MMBTA42
PZTA42
OT-23
OT-223
MPSA42
MPSA42 sot-223
CBVK741B019
F63TNR
MMBTA42
PN2222N
PZTA42
bsrxx
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Untitled
Abstract: No abstract text available
Text: Whnl mL'nM HP Ea Wc kL aE rTdT Surface Mount Zero Bias Schottky Detector Diodes Technical Data Features • Surface M ount SOT-23/ SOT-143 Package • H igh D etection Sensitivity: Package Lead Code Identification Top V iew 40 mV/|iW at 915 MHz 30 mV/jiW at 2.45 GHz
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OCR Scan
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OT-23/
OT-143
HSMS-285X
HSMS-285X
OT-23
OT143
DD127Ã
5963-2333E
5963-5030E
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