FMC16LX
Abstract: MB90F462 FMC-16LX MB90F387 MC-16LX MB90F4
Text: FUJITSU SEMICONDUCTOR ＣＯＮＴＲＯＬＬＥＲ ＭＡＮＵＡＬ XXXX-XXXX-XX-E F²MC-16 FAMILY 16-BIT MICROCONTROLLER An Additional Manual for the Softune Linkage Kit F²MC-16LX Standby Mode Transition Instruction Check FUJITSU LIMITED PREFACE •Objectives and Intended Readership
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MC-16
16-BIT
MC-16LX
trademarksF90007
00F9000D
flnk907s
MB90F387
00F90001
00F90003
FMC16LX
MB90F462
FMC-16LX
MB90F4
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IRGB15B60K
Abstract: AN-994 C-150 IRGB15B60KD IRGS15B60KD IRGSL15B60KD 94383D
Text: PD - 94383D IRGB15B60KD IRGS15B60KD IRGSL15B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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94383D
IRGB15B60KD
IRGS15B60KD
IRGSL15B60KD
O-220AB
AN-994.
O-220
IRGB15B60K
AN-994
C-150
IRGB15B60KD
IRGS15B60KD
IRGSL15B60KD
94383D
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IRGS15B60KD
Abstract: IRGSL15B60KD AN-994 C-150 IRGB15B60KD
Text: PD - 94383D IRGB15B60KD IRGS15B60KD IRGSL15B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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94383D
IRGB15B60KD
IRGS15B60KD
IRGSL15B60KD
O-220AB
AN-994.
O-220
IRGS15B60KD
IRGSL15B60KD
AN-994
C-150
IRGB15B60KD
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AN-994
Abstract: C-150 IRGS15B60KD IRGSL15B60KD IRGB15B60KDPBF
Text: PD - 95194 IRGB15B60KDPbF IRGS15B60KD IRGSL15B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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IRGB15B60KDPbF
IRGS15B60KD
IRGSL15B60KD
O-220
O-220AB
O-262
IRGB15B60KDPbF
IRGS15B60KD
AN-994.
AN-994
C-150
IRGSL15B60KD
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Untitled
Abstract: No abstract text available
Text: PD - 94383D IRGB15B60KD IRGS15B60KD IRGSL15B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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94383D
IRGB15B60KD
IRGS15B60KD
IRGSL15B60KD
O-220AB
AN-994.
O-220
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0805 size footprint
Abstract: WF MB 102
Text: Class 3 Y5V 10/16/25/50/100 V Vishay BCcomponents Surface Mount Multilayer Chip Capacitors FEATURES ∑ Class 3 dielectric ∑ Four standard sizes ∑ High capacitance per unit volume ∑ Supplied in tape on reel ∑ For high frequency applications ∑ Ni-barrier with 100 % tin terminations.
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18-Sep-03
0805 size footprint
WF MB 102
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WF MB 102
Abstract: CD110H
Text: ALUMINUM ELECTROLYTIC CAPACITOR CD110H WF WF FEATURE : 85 5000 Life time:85 5000 hours High performance For general consumer and industrial electronic products application SPECIFICATIONS Performance Characteristics Item 6.3V.DC Rated Voltage Range 100V.DC
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CD110H
120Hz)
16X25
18X30
18X35
10X12
10X16
10X20
WF MB 102
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WF MB 101
Abstract: WF MB 102
Text: Class 2 X7R 10/16/25/50/100 V Vishay BCcomponents Surface Mount Multilayer Chip Capacitors FEATURES ∑ ∑ ∑ ∑ ∑ Stable class 2 dielectric Four standard sizes High capacitance per unit volume Supplied in tape on reel For high frequency applications
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time1000
15-Sep-03
WF MB 101
WF MB 102
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Kp 1010
Abstract: No abstract text available
Text: Class 2 X7R 10/16/25/50/100 V Vishay BCcomponents Surface Mount Multilayer Chip Capacitors FEATURES ∑ ∑ ∑ ∑ ∑ Stable class 2 dielectric Four standard sizes High capacitance per unit volume Supplied in tape on reel For high frequency applications
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time1000
13-Jul-04
Kp 1010
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Altera hardcopy ASIC
Abstract: LF1152 FF1152 4SE360 4SE230
Text: Technology for Business HardCopy ASICs Electronic system designs are becoming more challenging, but the technology options available today to address this situation are limited. Standard-cell ASICs are too risky and expensive to design with, as reflected by the significant reduction seen recently in designs using ASICs
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Syst340
SS-01038-2
Altera hardcopy ASIC
LF1152
FF1152
4SE360
4SE230
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transistor SMD p95
Abstract: uPD703130 uPD703130GC-8EU
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD703130 V850E/MS2TM 32-BIT SINGLE-CHIP MICROCONTROLLER TM The µPD703130 is a member of the V850 Family control operations. of 32-bit single-chip microcontrollers designed for real-time These microcontrollers provide on-chip features, including a 32-bit CPU, RAM, interrupt
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PD703130
V850E/MS2TM
32-BIT
PD703130
V850E/MS2
V850E/MS1
U14985E
transistor SMD p95
uPD703130
uPD703130GC-8EU
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transistor SMD p95
Abstract: dvd D 5888 s uPD703130 uPD703130GC-8EU uPD703130GC-8EU-A U14985E
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD703130 V850E/MS2 32-BIT SINGLE-CHIP MICROCONTROLLER The µPD703130 is a member of the V850 Series of 32-bit single-chip microcontrollers designed for real-time control operations. These microcontrollers provide on-chip features, including a 32-bit CPU, RAM, interrupt controller,
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PD703130
V850E/MS2
32-BIT
PD703130
V850E/MS2
U14985E
V850E/MS1,
transistor SMD p95
dvd D 5888 s
uPD703130
uPD703130GC-8EU
uPD703130GC-8EU-A
U14985E
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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transistor SMD p95
Abstract: uPD703130 dvd D 5888 s uPD703130GC-8EU uPD703130GC-8EU-A
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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IC 7447
Abstract: "halbleiterwerk frankfurt" IC 7495 dioda by 238 SYk 04 vergleichsliste BY 235 D147d IC 7474 ic 74193
Text: eiecrronic Halbleiter-Bauelemente Vergleichsliste Hersteller Bi BA Bi Bi Bi Bi Bi Bi 100 103 106 116 127 147/25 147/50 152 i E S 8 Ti 8 T. T Se B i 152 Hl B i 170 B i 177 B i 178 B i 1«B BA 187 B i 204 B i 216 B i 217 B i 216 B i 219 B i 220 BA 221 B i 222
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Untitled
Abstract: No abstract text available
Text: - PRELIMINARY - October 1996 Edition 1.0 FUJITSU PRODUCT PROFILE SHEET M B 8 1 4 4 5 D - 6 0 / 7 0 / 6 0 L / 7 0 L CMOS 1M X 4 BIT HYPER PAGE MODE DRAM CMOS 1,048,576 x 4 bit Hyper Page M ode Dynamic RAM The Fujitsu M B814405D is a fully decoded CMOS Dynamic RAM DRAM that contains 4,194,304
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B814405D
MB814405D
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msm8128sxlmb
Abstract: JX-45
Text: MSM8128S/K/V/W/JX-45/55/70 Issue 1.0 : August 1989 1 2 8 K x 8 M o n o l i t h i c C M O S SRAT MSM8128S/K/V/W/JX ADVANCE PRODUCT INFORMATION 131,072 x 8 C M O S High Speed Static RAM Features Fast Access Times of 45,55,70 nS A SIC JEDEC 1Megabit Module Pinout
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MSM8128S/K/V/W/JX-45/55/70
MSM8128S/K/V/W/JX
150mW
MIL-STD-883B
MSM8128SXLMB-45
MIL-STD-883B
msm8128sxlmb
JX-45
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A109d
Abstract: Halbleiterbauelemente DDR VEB mikroelektronik mikroelektronik DDR a211d B109D "halbleiterwerk frankfurt" VEB Kombinat zf filter VEB Kombinat halbleiterwerk
Text: Halbleiter-Bauelemente Semiconductors 1981 D ie vorliegende Übersicht enthält in gedrängter Form die wichtigsten Grenz- und Kenn daten der in der D D R gefertigten H albleiterbauelem ente. Dem Anw ender soll durch diese Übersicht die Auswahl d er jew eils in Frage kommenden
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Untitled
Abstract: No abstract text available
Text: - PRELIMINARY Jun. 1995 Edition 2.0 P R O D U C T PR O FII F S H F F T • - FUJITSU M B 8 1 V4260S-60/-70 CMOS 256KX 16 BIT FAST PAGE MODE DYNAMIC RAM C M O S 262,144 x 16 bit Fast Page M ode Dynamic RAM The Fujitsu MB81V4260S is a fully decoded CM OS Dynamic RAM DRAM that contains 4,194,304
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V4260S-60/-70
256KX
MB81V4260S
512x16--
B81V4260S-60/-70
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CNY17GF
Abstract: CNY17G3
Text: Philip* Semiconductor* Product specification High-voltage op to co u p lers CNY17G/CNY17GF FEATURES • High current transfer ratio and a low saturation voltage, making the devices suitable for use with TTL integrated circuits • High degree of A C and DC
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CNY17G/CNY17GF
E90700
BS415
BS7002
003S4T2
CNY17GF
CNY17G3
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Untitled
Abstract: No abstract text available
Text: - PRELIMINARY - April 1996 Edition 2.2 FUJITSU PRODUCT PROFILE SHEET M B 8 1 4405C-60/-70 CMOS 1M X 4 BIT HYPER PAGE MODE DRAM CMOS 1,048,576 x 4 bit Hyper Page Mode D y na m ic RAM The Fujitsu M B814405C is a fully decoded CM OS Dynamic RAM DRAM that contains 4,194,304
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4405C-60/-70
B814405C
DS05-10189-1E
S-20095-5/96
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DM110
Abstract: No abstract text available
Text: MDM11000T/V/G/J-10/12/15 Issue 1.0 July 1989 MDM11000-T/V/G/J 1Mx 1 Monolithic c m o s d r a m ADVANCE PRODUCT INFORMATION 1,048,576 x 1 CMOS High Speed Dynamic RAM Features Pin Definition Package Type: T.'V'.'G'.'J' Row Access Times of 100/120/150 nS High density 300mil DIP Package
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MDM11000T/V/G/J-10/12/15
MDM11000-T/V/G/J
300mil
MDM11000T
MIL-883B
10OOT/V/G/J-10/12/15
DM110
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mikroelektronik ddr
Abstract: Halbleiterbauelemente DDR VEB mikroelektronik vqb 71 A910D VQB71 "halbleiterwerk frankfurt" diode sy-170 VQB 37 u112d
Text: Halbleiter-Bauelemente Semiconductors Die vorliegende Übersicht enthält in gedrängter Form die wichtigsten Grenz- und Kenn daten der in der DDR gefertigten Halbleiterbauelem ente. Dem Anwender soll durch diese Übersicht die Auswahl der jeweils in Frage kommenden
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SEMIKRON SKE
Abstract: sk 4f1 semikron ske 4 f 2 SK 4F1/10 ske4f1 SKE4F ske 2.5 SKE4F1/08 SK+4F1/06 SKE4F1/01
Text: 156 0 | SEMIKRCN INC ai3bt.?l 000103 3 1 | sem ikrd n T - 0 3 - J S Fast Recovery Rectifier Diodes Ifrm s maximum values for continuous operation V rsm V rrm 7A Ifav (sin. 180; Tamb = 45 °C) SKE2F1 SKE4F1 SKE4G1 1,2 A V trr = 0,2 [is trr = 0,4 (is 100 SKE 2 F 1/01
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2F1/02
4F1/02
4F1/08
4F1/10
SEMIKRON SKE
sk 4f1
semikron ske 4 f 2
SK 4F1/10
ske4f1
SKE4F
ske 2.5
SKE4F1/08
SK+4F1/06
SKE4F1/01
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