Untitled
Abstract: No abstract text available
Text: BCR 112 NPN Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=4.7kΩ 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR 112 WFs Pin Configuration 1=B 2=E Package
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Original
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VPS05161
EHA07184
OT-23
Oct-19-1999
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PDF
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Q62702-C2284
Abstract: No abstract text available
Text: BCR 112W NPN Silicon Digital Transistor • Switching circuit, inverter, inferface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=4.7kΩ Type Marking Ordering Code Pin Configuration BCR 112W WFs 1=B Q62702-C2284 Package 2=E 3=C SOT-323
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Original
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Q62702-C2284
OT-323
Nov-26-1996
Q62702-C2284
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PDF
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BCR112W
Abstract: VSO05561 WFs transistor
Text: BCR112W NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in resistor R 1=4.7k, R 2=4.7k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR112W WFs Pin Configuration 1=B 2=E Package 3=C SOT323
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Original
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BCR112W
VSO05561
EHA07184
OT323
Jul-16-2001
BCR112W
VSO05561
WFs transistor
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PDF
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Q62702-C2254
Abstract: No abstract text available
Text: BCR 112 NPN Silicon Digital Transistor • Switching circuit, inverter, inferface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=4.7kΩ Type Marking Ordering Code Pin Configuration BCR 112 WFs 1=B Q62702-C2254 Package 2=E 3=C SOT-23 Maximum Ratings
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Original
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Q62702-C2254
OT-23
Nov-26-1996
Q62702-C2254
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PDF
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WFs transistor
Abstract: VSO05561
Text: BCR 112W NPN Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor R 1=4.7kΩ, R 2=4.7kΩ 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR 112W WFs Pin Configuration 1=B 2=E Package
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Original
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VSO05561
EHA07184
OT-323
Oct-19-1999
WFs transistor
VSO05561
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PDF
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BCR112W
Abstract: VSO05561
Text: BCR112W NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in resistor R 1=4.7k, R 2=4.7k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR112W WFs Pin Configuration 1=B 2=E Package 3=C SOT323
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Original
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BCR112W
VSO05561
EHA07184
OT323
Nov-29-2001
BCR112W
VSO05561
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PDF
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BCR112
Abstract: No abstract text available
Text: BCR112 NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=4.7k, R2=4.7k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR112 WFs Pin Configuration 1=B 2=E Package 3=C SOT23
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Original
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BCR112
VPS05161
EHA07184
Jul-16-2001
BCR112
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PDF
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BCR112
Abstract: No abstract text available
Text: BCR112 NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=4.7k, R2=4.7k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR112 WFs Pin Configuration 1=B 2=E Package 3=C SOT23
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Original
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BCR112
VPS05161
EHA07184
Nov-29-2001
BCR112
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PDF
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WFs transistor
Abstract: WFs SOT23 BCR112 BCR112F BCR112L3 BCR112T BCR112U BCR112W
Text: BCR112. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=4.7kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package
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Original
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BCR112.
BCR112/F/L3
BCR112T/W
BCR112U
EHA07174
EHA07184
BCR112
BCR112F
BCR112L3
BCR112T
WFs transistor
WFs SOT23
BCR112
BCR112F
BCR112L3
BCR112T
BCR112U
BCR112W
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PDF
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WFs transistor
Abstract: WFs SOT23
Text: BCR112. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=4.7kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package
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Original
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BCR112.
BCR112/F/L3
BCR112T/W
BCR112U
EHA07184
EHA07174
BCR112
BCR112F
BCR112L3
BCR112T
WFs transistor
WFs SOT23
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PDF
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WFs transistor
Abstract: SOT323 WF BCR112U E6327 BCR112 BCR112F BCR112L3 BCR112T BCR112W infineon marking code B2 SOT23
Text: BCR112. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=4.7kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package
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Original
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BCR112.
BCR112/F/L3
BCR112T/W
BCR112U
EHA07174
EHA07184
BCR112
BCR112F
BCR112L3
BCR112T
WFs transistor
SOT323 WF
BCR112U
E6327
BCR112
BCR112F
BCR112L3
BCR112T
BCR112W
infineon marking code B2 SOT23
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PDF
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BCR108W
Abstract: BCR112 BCR112F BCR112U BCR112W BCW66 WFs transistor bcr1 WFs SOT23
Text: BCR112. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=4.7kΩ • BCR112U: Two internally isolated transistors with good matching in one multichip package • BCR112U: For orientation in reel see
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Original
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BCR112.
BCR112U:
BCR112/F
BCR112W
EHA07184
BCR112
BCR112F
OT323
BCR108W
BCR112
BCR112F
BCR112U
BCR112W
BCW66
WFs transistor
bcr1
WFs SOT23
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PDF
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Untitled
Abstract: No abstract text available
Text: BCR112. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=4.7kΩ • BCR112U: Two internally isolated transistors with good matching in one multichip package • BCR112U: For orientation in reel see
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Original
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BCR112.
BCR112U:
BCR112/F/L3
BCR112T/W
BCR112U
EHA07184
EHA07174
BCR112
BCR112F
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PDF
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WFs transistor
Abstract: No abstract text available
Text: BCR112. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=4.7kΩ • Pb-free (RoHS compliant) package • Qualified according AEC Q101 BCR112 BCR112W C 3 R1 R2 1
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Original
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BCR112.
BCR112
BCR112W
EHA07184
OT323
dissipationBCR112,
BCR112W,
2011-0components
WFs transistor
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PDF
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panasonic film capacitor marking code capacitors
Abstract: panasonic film capacitor "marking code"
Text: Panasonic Plastic Film Capacitors for High Frequency Metallized Polypropylene Film Capacitor Type: ECWF S Designed for applications where high current and high frequency are required •Features • Compact • Low-loss and excellent frequency characteristics
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Original
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PDF
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BCR08PN
Abstract: VPS05604
Text: BCR08PN NPN/PNP Silicon Digital Transistor Array 4 Switching circuit, inverter, interface circuit, 5 6 driver circuit Two galvanic internal isolated NPN/PNP Transistors in one package Built in bias resistor (R1=2.2k, R2=47k) 2 3 1 VPS05604 Tape loading orientation
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Original
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BCR08PN
VPS05604
OT-363
EHA07193
EHA07176
OT363
Jul-12-2001
BCR08PN
VPS05604
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PDF
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Q62702-C2486
Abstract: transistor digital 47k 22k PNP NPN Marking wfs sot
Text: BCR 08PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor (R1=2.2kΩ, R2=47kΩ) Tape loading orientation
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Original
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Q62702-C2486
OT-363
Nov-26-1996
transistor digital 47k 22k PNP NPN
Marking wfs sot
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PDF
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WFs transistor
Abstract: Siemens transistor WFs wfs marking
Text: SIEMENS BCR 112 NPN Silicon Digital Transistor >Switching circuit, inverter, inferface circuit, driver circuit «Built in bias resistor Ri=4.7kQ, R2=4.7kfl BCR 112 WFs Pin Configuration Q62702-C2254 1= B Package 2=E O Marking Ordering Code 05 II Type SOT-23
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OCR Scan
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Q62702-C2254
OT-23
300tis;
WFs transistor
Siemens transistor WFs
wfs marking
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 112 NPN Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit * Built in bias resistor R1=4.7ki2, R2=4.7k£2 Pin Configuration Q62702-C2254 1 =B Package II CO Ordering Code WFs O Marking BCR 112 LU II CNJ
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OCR Scan
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Q62702-C2254
OT-23
0535b05
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PDF
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1728640000
Abstract: 1728540000 1728000000
Text: Pin headers S2L 3.5/90F Pin headers S2L 3.5/90 ' J & C \ .i wfs!rt*iltu•*'?!tKr '/'Zi' ' *///.• 7 ; ’/ 'w » i’iM tif. Vt ' iff « _ Rated voltage V VDE 100* Rated current (A) 7.5 1> Technical data UL CSA 150 10 50 5 3.5 mm • tin-plated contacts
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OCR Scan
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5/90F
mm70000
1728640000
1728540000
1728000000
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PDF
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Untitled
Abstract: No abstract text available
Text: T H I R D ANGLE P R O J E C T I O N ITEM / \ /l\ A L T E R A T 1O N CODE ECWF2683 // 2753 ( ) n 2 8 2 3 () // 2 9 13 ( ) // 2 10 4 ( ) » 2 114() n 2 12 4 ( ) H 2 1 3 4 () // 2 15 4 ( ) // 2 16 4 ( ) // 2 18 4 ( ) u 2204 ( ) // 2224 ( ) // 2244 ( ) n 2274 ( )
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OCR Scan
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PDF
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Untitled
Abstract: No abstract text available
Text: D RAW ING M A D E IN T H IR D A N G L E PR O JEC TIO N TH IS DRAW ING IS U N P U B L I S H E D . c C o p y r i g h t RESERVED. 19 AMP PRODUCTS MAY R E L E A S E D FOR PU BLIC A TIO N by AMP BE COVERED In co rp o ra te d , BY U.S. H a r r is b u r g , AND
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OCR Scan
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DIST17
QG-C-576)
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PDF
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SOT-363 fg
Abstract: WFs transistor
Text: SIEMENS BCR 08PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor (R1=2.2ki2, R2=47k£2) Tape loading orientation
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OCR Scan
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OT-363
Q62702-C2486
BCR08PN
SOT-363 fg
WFs transistor
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 08PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor (R1=2.2kD, R2=47kiî) Cl Tape loading orientation
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OCR Scan
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Q62702-C2486
OT-363
as35b05
D15DLSB
E35bD5
01EDbS4
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PDF
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