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Contextual Info: 2SA1242 TOSHIBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm STROBE FLASH APPLICATIONS. MEDIUM POWER AMPLIFIER APPLICATIONS. 0.6 ±0.15 0,95MAX q t q 0.6 M AX 5.210.2, J hFE = 100-320 (VCe = - 2 V , IC = -0 .5 A ) hjrE = 70 (Min.) (VCE= - 2 V , 1 = - 4 A) |
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2SA1242 WIDTH-10ms |