wj w sot23
Abstract: t25oc WJ 83 MMBT2222 VG111 VG111-PCB1900 WJ transistor
Text: Application Note VG111 1.65 GHz Reference Design Summary The WJ VG111 variable gain amplifier can provide good linearity independent of gain setting at 1.65 GHz. An existing VG111-PCB1900 evaluation board can be modified for performance at 1.6 GHz. The only changes required were to remove the output tuning capacitor C5.
|
Original
|
PDF
|
VG111
VG111-PCB1900
MMBT2222
1-800-WJ1-4401
wj w sot23
t25oc
WJ 83
VG111-PCB1900
WJ transistor
|
J1 TRANSISTOR DIODE SOT-23 PACKAGE
Abstract: 3.3V TVS diode wj SP0502BAHTG TVS Diode DIODE WJ SOt23 J1 TRANSISTOR DIODE SOT-23 TVS diode power line Application Note WJ transistor ST tvs diode sma
Text: Application Note AP60X Evaluation Board Modifications for TVS Protection Product Information The AP60X Evaluation Board has been modified with Transient Voltage Suppression protection on the DC Supply lines. TVS diodes have been added to the Vpd, Vbias and Vcc lines. Table 1 contains mfg part numbers. Figure 1 is a AP60X schematic
|
Original
|
PDF
|
AP60X
OT-23
AP56X)
AH21X,
AH31X)
J1 TRANSISTOR DIODE SOT-23 PACKAGE
3.3V TVS
diode wj
SP0502BAHTG
TVS Diode
DIODE WJ SOt23
J1 TRANSISTOR DIODE SOT-23
TVS diode power line Application Note
WJ transistor
ST tvs diode sma
|
MOTOROLA TRANSISTOR
Abstract: 2160 transistor
Text: VG111 PCS/UMTS-band Variable Gain Amplifier Applications • Xmit & Rcv AGC circuitry for mobile infrastructure GND GND 5 GND 6 GND Gain Ctrl 7 4 3 2 1 GND 8 28 GND GND 9 27 GND GND 10 26 GND Amp RF IN 11 25 RF OUT GND 12 24 GND Variable Attenuator GND 13
|
Original
|
PDF
|
VG111
28-pin
VG111
J-STD-020
1-800-WJ1-4401
MOTOROLA TRANSISTOR
2160 transistor
|
zener c26
Abstract: diode zener c26 SN102 wj 5 smd zener SMD Wj DIODE smd Wj SOt23 wj 3 smd smd wj diode zener c25 DIODE smd Wj
Text: Application Note AP603 450-800 MHz Reference Design Summary The AP603 is a high dynamic range power amplifier in a leadfree/RoHS-compliant 5x6mm power DFN SMT package. On the product’s datasheet, the amplifier is shown as having an operational frequency range between 800 – 2400 MHz
|
Original
|
PDF
|
AP603
AP603
41dBc
AP603-F
1000pF
100pF
698ohm
DFN14
zener c26
diode zener c26
SN102
wj 5 smd
zener SMD Wj
DIODE smd Wj SOt23
wj 3 smd
smd wj
diode zener c25
DIODE smd Wj
|
JESD22-A114
Abstract: MMBT2222 VG111 VG111-F VG111-PCB1900 VG111-PCB2100 MOTOROLA TRANSISTOR
Text: VG111 The Communications Edge TM PCS/UMTS-band Variable Gain Amplifier Applications • Xmit & Rcv AGC circuitry for mobile infrastructure GND GND GND Gain Ctrl GND GND 5 4 3 2 1 28 GND GND 9 27 GND GND 10 25 RF OUT GND 12 24 GND Variable Attenuator GND 13
|
Original
|
PDF
|
VG111
1-800-WJ1-4401
JESD22-A114
MMBT2222
VG111
VG111-F
VG111-PCB1900
VG111-PCB2100
MOTOROLA TRANSISTOR
|
Atten25
Abstract: MOTOROLA TRANSISTOR
Text: VG111 The Communications Edge TM PCS/UMTS-band Variable Gain Amplifier Applications • Xmit & Rcv AGC circuitry for mobile infrastructure GND 5 GND 6 GND Vctrl 7 GND GND 4 3 2 1 GND 8 28 GND GND 9 27 GND Amp GND 10 Superior thermal design allows the product to have a
|
Original
|
PDF
|
VG111
VG111
1-800-WJ1-4401
Atten25
MOTOROLA TRANSISTOR
|
MOTOROLA TRANSISTOR
Abstract: No abstract text available
Text: VG111 The Communications Edge TM Product Information PCS/UMTS-band Variable Gain Amplifier GND GND GND 5 GND Gain Ctrl 6 4 3 2 1 28 GND GND 9 27 GND 25 RF OUT GND 12 24 GND Variable Attenuator GND 13 23 GND GND 14 16 17 18 19 20 21 GND GND N/C GND N/C 22 GND
|
Original
|
PDF
|
VG111
VG111
1-800-WJ1-4401
MOTOROLA TRANSISTOR
|
Untitled
Abstract: No abstract text available
Text: VG111 The Communications Edge TM PCS/UMTS-band Variable Gain Amplifier Applications • Xmit & Rcv AGC circuitry for mobile infrastructure GND 5 GND 6 GND Vctrl 7 GND GND The VG111 is a PCS / UMTS-band high dynamic range variable gain amplifier VGA packaged in a
|
Original
|
PDF
|
VG111
VG111
1-800-WJ1-4401
|
VG111-PCB1900
Abstract: MOTOROLA TRANSISTOR JESD22-A114 MMBT2222 VG111 VG111-PCB2100 QFN-6x6 package capacitor 22 pf DNP
Text: VG111 The Communications Edge TM PCS/UMTS-band Variable Gain Amplifier Applications GND 5 GND 6 GND Vctrl 7 GND GND The VG111 is a PCS / UMTS-band high dynamic range variable gain amplifier VGA packaged in a 6x6 mm surface-mount package. The +22 dBm output
|
Original
|
PDF
|
VG111
VG111
1-800-WJ1-4401
VG111-PCB1900
MOTOROLA TRANSISTOR
JESD22-A114
MMBT2222
VG111-PCB2100
QFN-6x6 package
capacitor 22 pf DNP
|
VG111-PCB2100
Abstract: VG111-PCB1900
Text: VG111 The Communications Edge TM PCS/UMTS-band Variable Gain Amplifier Applications • Xmit & Rcv AGC circuitry for mobile infrastructure GND GND 5 GND 6 GND Gain Ctrl 7 4 3 2 1 GND 8 28 GND GND 9 27 GND GND 10 26 GND Amp RF IN 11 25 RF OUT GND 12 24 GND
|
Original
|
PDF
|
VG111
VG111
1-800-WJ1-4401
VG111-PCB2100
VG111-PCB1900
|
MOTOROLA TRANSISTOR
Abstract: No abstract text available
Text: VG111 The Communications Edge TM PCS/UMTS-band Variable Gain Amplifier Applications • Xmit & Rcv AGC circuitry for mobile infrastructure GND GND GND Gain Ctrl GND GND 5 4 3 2 1 28 GND GND 9 27 GND GND 10 25 RF OUT GND 12 24 GND Variable Attenuator GND 13
|
Original
|
PDF
|
VG111
VG111
1-800-WJ1-4401
MOTOROLA TRANSISTOR
|
DSA0092069
Abstract: No abstract text available
Text: VG101 The Communications Edge TM Cellular-band Variable Gain Amplifier Applications • Xmit & Rcv AGC circuitry for mobile infrastructure GND 5 GND 6 GND Vctrl 7 GND GND The VG101 is a cellular-band high dynamic range variable gain amplifier VGA packaged in a low
|
Original
|
PDF
|
VG101
VG101
1-800-WJ1-4401
DSA0092069
|
JESD22-A114
Abstract: MMBT2222 VG101 VG101-F VG101-PCB IN1125 MOTOROLA TRANSISTOR
Text: VG101 The Communications Edge TM Cellular-band Variable Gain Amplifier Applications • Xmit & Rcv AGC circuitry for mobile infrastructure GND Gain Ctrl GND GND GND GND 5 4 3 2 1 28 GND GND 9 27 GND GND 10 26 GND Amp RF IN 11 25 RF OUT GND 12 24 GND Variable
|
Original
|
PDF
|
VG101
VG101
1-800-WJ1-4401
JESD22-A114
MMBT2222
VG101-F
VG101-PCB
IN1125
MOTOROLA TRANSISTOR
|
MOTOROLA TRANSISTOR
Abstract: VG111-PCB1900 JESD22-A114 MMBT2222 VG111 VG111-F VG111-PCB2100 variable resistor 47
Text: VG111 PCS/UMTS-band Variable Gain Amplifier Applications • Xmit & Rcv AGC circuitry for mobile infrastructure GND GND 5 GND 6 GND Gain Ctrl 7 4 3 2 1 GND 8 28 GND GND 9 27 GND GND 10 26 GND Amp RF IN 11 25 RF OUT GND 12 24 GND Variable Attenuator GND 13
|
Original
|
PDF
|
VG111
1-800-WJ1-4401
MOTOROLA TRANSISTOR
VG111-PCB1900
JESD22-A114
MMBT2222
VG111
VG111-F
VG111-PCB2100
variable resistor 47
|
|
|
Untitled
Abstract: No abstract text available
Text: VG101 The Communications Edge TM Cellular-band Variable Gain Amplifier Applications • Xmit & Rcv AGC circuitry for mobile infrastructure GND Gain Ctrl GND GND GND GND 5 4 3 2 1 28 GND GND 9 27 GND GND 10 26 GND Amp RF IN 11 25 RF OUT GND 12 24 GND Variable
|
Original
|
PDF
|
VG101
VG101
1-800-WJ1-4401
|
Atten 850
Abstract: JESD22-A114 MMBT2222 VG101 VG101-PCB
Text: VG101 The Communications Edge TM Cellular-band Variable Gain Amplifier Applications GND GND GND Vctrl 5 GND GND 6 4 3 2 1 28 GND GND 9 27 GND Amp GND 10 26 GND RF IN 11 25 RF OUT GND 12 24 GND Variable Attenuator GND 13 23 GND GND 14 • Xmit & Rcv AGC circuitry for
|
Original
|
PDF
|
VG101
1-800-WJ1-4401
Atten 850
JESD22-A114
MMBT2222
VG101
VG101-PCB
|
MOTOROLA TRANSISTOR
Abstract: CAPACITOR chip mtbf JESD22-A114 J-STD-020B MMBT2222 VG111 VG111-PCB1900 VG111-PCB2100 wj w sot23 marking code s22 qfn
Text: VG111 The Communications Edge TM PCS/UMTS-band Variable Gain Amplifier Applications • Xmit & Rcv AGC circuitry for mobile infrastructure 4 GND GND 5 GND Vctrl 6 GND GND 7 3 2 1 GND 8 28 GND GND 9 27 GND Amp GND 10 26 GND RF IN 11 25 RF OUT GND 12 24 GND
|
Original
|
PDF
|
VG111
VG111
JESD22-C101
J-STD-020B
1-800-WJ1-4401
MOTOROLA TRANSISTOR
CAPACITOR chip mtbf
JESD22-A114
J-STD-020B
MMBT2222
VG111-PCB1900
VG111-PCB2100
wj w sot23
marking code s22 qfn
|
Untitled
Abstract: No abstract text available
Text: VG101 The Communications Edge TM Cellular-band Variable Gain Amplifier Applications • Xmit & Rcv AGC circuitry for mobile infrastructure GND Gain Ctrl GND GND GND GND 5 4 3 2 1 28 GND GND 9 27 GND GND 10 26 GND Amp RF IN 11 25 RF OUT GND 12 24 GND Variable
|
Original
|
PDF
|
VG101
VG101
1-800-WJ1-4401
|
Untitled
Abstract: No abstract text available
Text: VG101 The Communications Edge TM Cellular-band Variable Gain Amplifier Applications • Xmit & Rcv AGC circuitry for mobile infrastructure GND Gain Ctrl GND GND GND GND 5 4 3 2 1 28 GND GND 9 27 GND GND 10 26 GND Amp RF IN 11 25 RF OUT GND 12 24 GND Variable
|
Original
|
PDF
|
VG101
VG101
1-800-WJ1-4401
|
Untitled
Abstract: No abstract text available
Text: VG101 Cellular-band Variable Gain Amplifier Applications • Xmit & Rcv AGC circuitry for mobile infrastructure GND Gain Ctrl GND GND GND GND 6 5 4 3 2 1 28 GND GND 9 27 GND GND 10 26 GND Amp RF IN 11 25 RF OUT GND 12 24 GND Variable Attenuator GND 13 23 GND
|
Original
|
PDF
|
VG101
VG101
1-800-WJ1-4401
|
VG101-PCB
Abstract: 6x6 qfn J-STD-020B MMBT2222 VG101 JESD22-A114 MOTOROLA TRANSISTOR 2 stage amplifier "gain control" attenuation
Text: VG101 The Communications Edge TM Cellular-band Variable Gain Amplifier Applications GND GND GND Vctrl 5 GND GND 6 4 3 2 1 28 GND GND 9 27 GND Amp GND 10 26 GND RF IN 11 25 RF OUT GND 12 24 GND Variable Attenuator GND 13 23 GND GND 14 • Xmit & Rcv AGC circuitry for
|
Original
|
PDF
|
VG101
autD22-C101
J-STD-020B
1-800-WJ1-4401
VG101-PCB
6x6 qfn
J-STD-020B
MMBT2222
VG101
JESD22-A114
MOTOROLA TRANSISTOR
2 stage amplifier "gain control" attenuation
|
Untitled
Abstract: No abstract text available
Text: Discrete POWER & Signal Technologies I S 3 Iin^* ' |wJ 11 F ti S — .•!■-/ ‘y iC D N O y O T 'D R 2N3904 C * >\ MMBT3904 TO-92 SOT-23 BE Mark: 1A MMPQ3904 PZT3904 SOT-223 SOIC-16 NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch.
|
OCR Scan
|
PDF
|
2N3904
MMBT3904
OT-23
MMPQ3904
PZT3904
OT-223
SOIC-16
2N3904
MMBT3904
MMPQ3904
|
Transistor J310
Abstract: No abstract text available
Text: MMBFU310LT1* M AXIM UM RATINGS Rating Symbol Value Unit D r a in -S o u rc e V o lta g e V DS 25 V dc G a te -S o u rc e V o lta g e V GS 25 V dc 'G 10 m Adc Symbol Max Unit PD 225 mW 1.8 m W aC r wJ A 556 °C W T j- T stg - 55 to + 150 CC G a te C u rre n t
|
OCR Scan
|
PDF
|
MMBFU310LT1*
OT-23
O-236AB)
Transistor J310
|
4N SOT23
Abstract: S269-BO
Text: LS S269-BO YELLOW LY S269-BO GREEN LG S269-BO SIEMENS SUPER-RED SOT23 Low Current Surface Mount LED Lamp P a cka ge D im e n sio n s in Inches m m • 00fi( 15) 0 0 4 ( 09) .117 (fi 0) $ r | 10') {? H) p hb| 2" 30" |c! T ill 1^1 !. '1 M ax. 10 “ M ax
|
OCR Scan
|
PDF
|
S269-BO
S269-BO
1111Mux
4N SOT23
|
