marking wl3
Abstract: marking code WL3 diode 4 pin marking code WL3 WL3 marking MD218B MD218 11-md218b WL4 MARKING DIODE DFN10 DFN-10
Text: 11-MD218B Version Issue Date File Name Total Page : A.003 : 2009-02-10 : SP-MD218B-A.003.doc : 17 130mA, 10Bit Current Sinking VCM Driver with I2C Interface 新竹市展業一路 9 號 7 樓之 1 SILICON TOUCH TECHNOLOGY INC. 9-4F-3, Prosperity Rd I, Science-Based Industrial Park
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11-MD218B
SP-MD218B-A
130mA,
10Bit
Tel886-3-5727171
Fax886-3-5727390
10-Bit
11-MD218B
marking wl3
marking code WL3 diode 4 pin
marking code WL3
WL3 marking
MD218B
MD218
WL4 MARKING DIODE
DFN10
DFN-10
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Untitled
Abstract: No abstract text available
Text: 11-MD114 Version Issue Date File Name Total Page : A.007 : 2011/04/28 : SP-MD114-A.007.doc : 13 Motor Driver for Mobile Phone 新竹市科學園區展業一路 9 號 7 樓之 1 SILICON TOUCH TECHNOLOGY INC. 9-7F-1, Prosperity Road I, Science Based Industrial Park,
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11-MD114
SP-MD114-A
MD114
11-MD114
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MARKING R2W
Abstract: transistor marking R2w marking wl3 PIC10F206 transistor r2w 436X WL3 marking TC1240A marking code WL3 T-CON Schematic
Text: MCP434X/436X 7/8-Bit Quad SPI Digital POT with Non-Volatile Memory 2009 Microchip Technology Inc. MCP43X1 Quad Potentiometers P3A P3W P3B CS SCK SDI VSS P1B P1W P1A P2A P2W P2B VDD SDO RESET WP P0B P0W P0A 20 19 18 17 16 15 14 12 12 11 1 2 3 4 5 6 7 8 9
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MCP434X/436X
MCP43X1
DS22233A-page
MARKING R2W
transistor marking R2w
marking wl3
PIC10F206
transistor r2w
436X
WL3 marking
TC1240A
marking code WL3
T-CON Schematic
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Untitled
Abstract: No abstract text available
Text: Identification Markers Create your own Safety Signs! • Create your own legend using the PANDUIT DURA-MARK PTR2E Printer and clear polyester tapes.‡ • Print legend on clear polyester tape and adhere marker to any of the pressure sensitive or rigid safety
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PPS0710C442
PPS1014C442
PPS1420C442
PRS0710C442
PRS1014C442
PRS1420C442
PPS0710D440
PPS1014D440
PPS1420D440
SA101N179E-ID
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MCP44X1
Abstract: transistor marking R2w MCP4461 MARKING R2W MCP4441 ICE 28165 tcon 102a taa 611 b12 MCP444X MCP44XX
Text: MCP444X/446X 7/8-Bit Quad I2C Digital POT with Nonvolatile Memory 2010 Microchip Technology Inc. MCP44X1 Quad Potentiometers P3A P3W P3B HVC/A0 SCL SDA VSS P1B P1W P1A 20 19 18 17 16 15 14 12 12 11 1 2 3 4 5 6 7 8 9 10 P2A P2W P2B VDD A1 RESET WP P0B P0W
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MCP444X/446X
MCP44X1
DS22265A-page
transistor marking R2w
MCP4461
MARKING R2W
MCP4441
ICE 28165
tcon 102a
taa 611 b12
MCP444X
MCP44XX
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Untitled
Abstract: No abstract text available
Text: Supertex inc. MD2133 High Speed Ultrasound Beamforming Source Driver with Waveform Memory and Digital Delay Counter Features ►► Vector angle I-Q PWM mode or staircase PAM mode ►► 8-bit fast current DAC push-pull source-drive topology ►► SSTL-2 differential clock inputs up to 250MHz
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MD2133
250MHz
16-bit
DSFP-MD2133
NR031214
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Untitled
Abstract: No abstract text available
Text: Supertex inc. MD2133 High Speed Ultrasound Beamforming Source Driver with Waveform Memory and Digital Delay Counter Features General Description Applications The MD2133 contains CMOS digital logic input circuits, an 8-bit current DAC for aperture weighting control, as well as an 8-bit
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MD2133
MD2133
steps/360Â
DSFP-MD2133
NR031214
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Untitled
Abstract: No abstract text available
Text: 256 K x 16-Bit Dynamic RAM HYB 514171BJ-50/-60/-70 Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh HYB 514171BJL-50/-60/-70 Advanced Information • • • 262 144 words by 16-bit organization 0 to 70 °C operating temperature Fast access and cycle time
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16-Bit
514171BJ-50/-60/-70
16-Bit
514171BJL-50/-60/-70
HYB514171BJ/BJL-50/-60/-70
16-DRAM
GPJ09018
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marking wl3
Abstract: No abstract text available
Text: 3.3V 256 K x 16-Bit Dynamic RAM HYB 314171BJ-50/-60/-70 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh HYB 314171BJL-50/-60/-70 • 262 144 words by 16-bit organization • 0 to 70 °C operating temperature • Fast access and cycle time • Low Power dissipation
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16-Bit
314171BJ-50/-60/-70
16-Bit
314171BJL-50/-60/-70
HYB314171BJ/BJL-50/-60/-70
16-DRAM
GPJ09018
marking wl3
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Untitled
Abstract: No abstract text available
Text: 256 K x 16-Bit EDO-DRAM HYB514175BJ -50/-55/-60 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh HYB514175BJL-50/-55/-60 Advanced Information • • • 262 144 words by 16-bit organization 0 to 70 °C operating temperature Fast access and cycle time
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16-Bit
HYB514175BJ
HYB514175BJL-50/-55/-60
HYB514175BJ/BJL-50/-55/-60
16-DRAM
GPJ09018
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Q67100-Q1104
Abstract: Q67100-Q1105 Q67100-Q1106
Text: 2M x 8 - Bit Dynamic RAM 2k Refresh Hyper Page Mode- EDO HYB5117805BSJ -50/-60/-70 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 -70 tRAC RAS access time 50 60 70 ns tCAC CAS access time
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HYB5117805BSJ
HYB5117805BSJ-50/-60/-70
P-SOJ-28-3
400mil)
81max
GPJ05699
Q67100-Q1104
Q67100-Q1105
Q67100-Q1106
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5118160
Abstract: Q67100-Q1073 Q67100-Q1072 HYB5118160BSJ-50
Text: 1M x 16-Bit Dynamic RAM 1k-Refresh HYB5118160BSJ-50/-60/-70 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 -70 tRAC RAS access time 50 60 70 ns tCAC CAS access time 13 15 20
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16-Bit
HYB5118160BSJ-50/-60/-70
5118160BSJ-50/-60/-70
16-DRAM
P-SOJ-42
GPJ05853
5118160
Q67100-Q1073
Q67100-Q1072
HYB5118160BSJ-50
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HYB3117805BSJ
Abstract: Q67100-Q1151 Q67100-Q1152
Text: 2M x 8 - Bit Dynamic RAM 2k Refresh Hyper Page Mode- EDO HYB3117805BSJ -50/-60/-70 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 -70 tRAC RAS access time 50 60 70 ns tCAC CAS access time
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HYB3117805BSJ
HYB3117805BSJ-50/-60/-70
P-SOJ-28-3
400mil)
81max
GPJ05699
Q67100-Q1151
Q67100-Q1152
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Q67100-Q1072
Abstract: Q67100-Q1073
Text: 1M x 16-Bit Dynamic RAM 1k-Refresh HYB5118160BSJ-50/-60/-70 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 -70 tRAC RAS access time 50 60 70 ns tCAC CAS access time 13 15 20
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16-Bit
HYB5118160BSJ-50/-60/-70
5118160BSJ-50/-60/-70
16-DRAM
P-SOJ-42
GPJ05853
Q67100-Q1072
Q67100-Q1073
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HYB3117805BSJ
Abstract: Q67100-Q1151 Q67100-Q1152
Text: 2M x 8 - Bit Dynamic RAM 2k Refresh Hyper Page Mode- EDO HYB3117805BSJ -50/-60/-70 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 -70 tRAC RAS access time 50 60 70 ns tCAC CAS access time
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HYB3117805BSJ
HYB3117805BSJ-50/-60/-70
P-SOJ-28-3
400mil)
81max
GPJ05699
Q67100-Q1151
Q67100-Q1152
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EDO DRAM
Abstract: Q67100-Q1104 Q67100-Q1105 Q67100-Q1106 smd code marking wl5
Text: 2M x 8 - Bit Dynamic RAM 2k Refresh Hyper Page Mode- EDO HYB5117805BSJ -50/-60/-70 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 -70 tRAC RAS access time 50 60 70 ns tCAC CAS access time
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HYB5117805BSJ
HYB5117805BSJ-50/-60/-70
P-SOJ-28-3
400mil)
81max
GPJ05699
EDO DRAM
Q67100-Q1104
Q67100-Q1105
Q67100-Q1106
smd code marking wl5
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Q67100-Q1147
Abstract: Q67100-Q1148 WL10
Text: 2M x 8-Bit Dynamic RAM HYB3117800BSJ-50/-60/-70 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 -70 tRAC RAS access time 50 60 70 ns tCAC CAS access time 13 15 20 ns tAA Access time from address
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HYB3117800BSJ-50/-60/-70
3117800BSJ-50/-60/-70
P-SOJ-28-3
81max
GPJ05699
Q67100-Q1147
Q67100-Q1148
WL10
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smd code marking wl5
Abstract: Q67100-Q1188 BST60
Text: HYB3116165BSJ/BST L -50/-60/-70 HYB3118165BSJ/BST(L)-50/-60/-70 1M x 16-Bit EDO- Dynamic RAM (1k & 4k -Refresh) Advanced Information • • • • • • • • • • • • • 1 048 576 words by 16-bit organization 0 to 70 °C operating temperature
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HYB3116165BSJ/BST
HYB3118165BSJ/BST
16-Bit
HYB3118165BSJ/BST-50)
HYB3118165BSJ/BST-60)
GPJ05853
HYB3116
165BSJ/BST
P-SOJ-42
smd code marking wl5
Q67100-Q1188
BST60
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HYB5117400BJ
Abstract: HYB5117400BT hyb5117400
Text: 4M x 4-Bit Dynamic RAM HYB5117400BJ -50/-60/-70 HYB5117400BT -50/-60/-70 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 -70 tRAC RAS access time 50 60 70 ns tCAC CAS access time
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HYB5117400BJ
HYB5117400BT
5117400BJ/BT-50/-60/-70
P-SOJ-26/24
GPJ05628
GPX05857
hyb5117400
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marking wl3
Abstract: V53C517405A WL10 WL12 WL17
Text: MOSEL VITELIC V53C517405A 4M X 4 EDO PAGE MODE CMOS DYNAMIC RAM V53C517405A 50 60 Max. RAS Access Time, tRAC 50 ns 60 ns Max. Column Address Access Time, (tCAA) 25 ns 30 ns Min. Extended Data Out Page Mode Cycle Time, (tPC) 20 ns 25 ns Min. Read/Write Cycle Time, (tRC)
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V53C517405A
cycles/32
24/26-pin
marking wl3
V53C517405A
WL10
WL12
WL17
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Q67100-Q1147
Abstract: Q67100-Q1148 WL10
Text: 2M x 8-Bit Dynamic RAM HYB3117800BSJ-50/-60/-70 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 -70 tRAC RAS access time 50 60 70 ns tCAC CAS access time 13 15 20 ns tAA Access time from address
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HYB3117800BSJ-50/-60/-70
3117800BSJ-50/-60/-70
P-SOJ-28-3
81max
GPJ05699
Q67100-Q1147
Q67100-Q1148
WL10
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1MX4
Abstract: HYB314400BJ/BJL-50/-60/-70
Text: 1Mx4-Bit Dynamic RAM HYB314400BJ/BJL-50/-60/-70 Advanced Information • 1 048 576 words by 4-bit organization • 0 to 70 °C operating temperature • Fast Page Mode Operation • Performance: -50 -60 -70 tRAC RAS access time 50 60 70 ns tCAC CAS access time
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HYB314400BJ/BJL-50/-60/-70
P-SOJ-26/20
GPJ05626
1MX4
HYB314400BJ/BJL-50/-60/-70
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WL15
Abstract: WL3 MARKING WL3 MARKING cODE
Text: SIEM ENS 2M x 8 - Bit Dynamic RAM 2k Refresh Fast Page Mode HYB5117800BJ/BSJ-50/-60 HYB3117800BJ(L)/BSJ(L)-50/-60 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 °C operating temperature • Fast Page Mode operation • Performance:
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HYB5117800BJ/BSJ-50/-60
HYB3117800BJ
HYB5117800
HYB3117800
117800BJ
P-SOJ-28-4
300mil)
P-SOJ-28-3
400mil)
WL15
WL3 MARKING
WL3 MARKING cODE
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Untitled
Abstract: No abstract text available
Text: SIEMENS 4M X 16-Bit Dynamic RAM 8k, 4k & 2k Refresh HYB 3164160AT(L) -40/-50/-60 HYB 3165160AT(L) -40/-50/-60 HYB 3166160AT(L) -40/-50/-60 Advanced Information • 4 194 304 words by 16-bit organization • 0 to 70 °C operating temperature • Fast Page Mode operation
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16-Bit
3164160AT
3165160AT
3166160AT
HYB3164
160AT
16-DRAM
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