SO24L
Abstract: TDA1319T
Text: INTEGRATED CIRCUITS DATA SHEET TDA1319T DCC write amplifier write 2 Preliminary specification File under Integrated Circuits, IC01 April 1994 Philips Semiconductors Preliminary specification DCC write amplifier (write 2) TDA1319T FEATURES GENERAL DESCRIPTION
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TDA1319T
TDA1319T
SO24L
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PDF
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24lc018
Abstract: 93CXX 24LCxx 24C01A 24C02A 24C04A 24CXX 24LC01 24LC02 24LC04
Text: Minimizing Serial Bus Communication Time AN559 Optimizing Serial Bus Operations with Proper Write Cycle Times SERIAL EEPROM WRITE TIME REQUIREMENTS • Write timer worse case indicates the time the part is in the internally controlled write cycle allowing for
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AN559
D-81739
24lc018
93CXX
24LCxx
24C01A
24C02A
24C04A
24CXX
24LC01
24LC02
24LC04
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PDF
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FT28C010
Abstract: CERAMIC LEADLESS CHIP CARRIER LCC 44
Text: Features • Fast Read Access Time • Automatic Page Write Operation • • • • • • • Internal Address and Data Latches for 128-Bytes Internal Control Timer Fast Write Cycle Time Page Write Cycle Time - 10 ms Maximum 1 to 128-Byte Page Write Operation
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128-Bytes
128-Byte
FT28C010
M5004
CERAMIC LEADLESS CHIP CARRIER LCC 44
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PDF
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125 kHz RFID
Abstract: Atmel 224 AT88RF256-12 125 kHz RFID antenna 125 kHz RFID tag Antenna Coil 125 kHz RFID design barcode reader circuit RFID specifications
Text: READ/WRITE 320-BIT EEPROM AT88RF256-12 125 KHZ RFID READ/WRITE 320-BIT EEPROM FEATURES • • • • • • • • • • • • 125 kHz RFID chip for cards and tags 256 read/write EEPROM bits, divided into eight pages of 32 bits Password and write lock protection
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320-BIT
AT88RF256-12
AT88RF256
002A-12/00/10M
125 kHz RFID
Atmel 224
AT88RF256-12
125 kHz RFID antenna
125 kHz RFID tag
Antenna Coil 125 kHz RFID design
barcode reader circuit
RFID specifications
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PDF
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atmel 0737
Abstract: AT28C010-25DM
Text: Features • Fast Read Access Time - 120 ns • Automatic Page Write Operation • • • • • • • • – Internal Address and Data Latches for 128-Bytes – Internal Control Timer Fast Write Cycle Time – Page Write Cycle Time - 10 ms Maximum – 1 to 128-Byte Page Write Operation
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128-Bytes
128-Byte
AT28C010
atmel 0737
AT28C010-25DM
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PDF
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ANT019
Abstract: temic transponder U2270 kit u2270b demo BC639 collector temic transponder 2270B 12 temic transponder TK5530-PP TK5560-PP 2270B
Text: U2270B Read / Write Base Station IC Description IC for IDIC * read-write base stations The U2270B is a bipolar integrated circuit for read-write base stations in contactless identification and immobilizer systems. specific distances. It also includes all signal-processing
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U2270B
U2270B
e5530-GT
TK5530-PP
TK5550-PP
TK5560-PP
ANT019
temic transponder
U2270 kit
u2270b demo
BC639 collector
temic transponder 2270B
12 temic transponder
2270B
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PDF
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U2270
Abstract: TK5530-PP ANT019 TK5560-PP immo off temic transponder TK5550 TK5550-PP U2270B U2270B-FP
Text: U2270B Read / Write Base Station IC Description IC for IDIC * read-write base stations The U2270B is a bipolar integrated circuit for read-write base stations in contactless identification and immobilizer systems. specific distances. It also includes all signal-processing
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U2270B
U2270B
e5530-GT
TK5530-PP
TK5550-PP
TK5560-PP
D-74025
13-Dec-96
U2270
ANT019
immo off
temic transponder
TK5550
U2270B-FP
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PDF
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AN1012
Abstract: M48Z32V
Text: M48Z32V 3.3V, 256Kbit 32Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, and powerfail control circuit ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ WRITE protect voltages:
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M48Z32V
256Kbit
32Kbit
M48Z32V:
44-pin
AN1012
M48Z32V
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PDF
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S29GL-N
Abstract: S29PL-N S29WS-P
Text: MirrorBit Write Buffer Programming and Page Buffers Application Note Overview The write buffer in Spansion MirrorBit Flash memory devices is designed to reduce the overall system programming time when writing to the Flash device. The host system first fills the write
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PDF
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TK5560-PP
Abstract: U2270B-FP IMMOBILIZER Antenna Coil U2270 TK5550-PP 12 temic transponder ANT019 immobilizer in car operation temic transponder TK5530-PP
Text: U2270B Read / Write Base Station IC Description IC for IDIC * read-write base stations The U2270B is a bipolar integrated circuit for read-write base stations in contactless identification and immobilizer systems. specific distances. It also includes all signal-processing
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U2270B
U2270B
e5530-GT
TK5530-PP
TK5550-PP
TK5560-PP
D-74025
13-Dec-96
U2270B-FP
IMMOBILIZER Antenna Coil
U2270
12 temic transponder
ANT019
immobilizer in car operation
temic transponder
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PDF
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AN1012
Abstract: M48Z32V
Text: M48Z32V 3.3V, 256Kbit 32Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, and powerfail control circuit ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ WRITE protect voltages:
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M48Z32V
256Kbit
32Kbit
M48Z32V:
44-pin
AN1012
M48Z32V
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PDF
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Untitled
Abstract: No abstract text available
Text: TK5551 Standard Read/Write ID Transponder with Anti-collision DATASHEET Features ● Read/write anti-collision ID transponder in plastic package ● Contactless read/write data transmission ● Inductive coupled power supply at 125kHz ● Basic component: R/W IDIC e5551
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TK5551
125kHz
e5551
500ms
RF/32,
224-bit
32-bit
RF/16
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PDF
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Untitled
Abstract: No abstract text available
Text: . Preliminary IBM0418A86LQKA IBM0436A86LQKA IBM0418A86SQKA IBM0436A86SQKA 8Mb Late-Late-Write SRAM Features • 256K x 36 or 512K x 18 organization • Single Read/Write control pin R/W • 3.3V or 2.5V Power Supply and I/O • Individual Byte Write Controls
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IBM0418A86LQKA
IBM0436A86LQKA
IBM0418A86SQKA
IBM0436A86SQKA
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PDF
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Untitled
Abstract: No abstract text available
Text: . Preliminary IBM0418A86LQKA IBM0436A86LQKA IBM0418A86SQKA IBM0436A86SQKA 8Mb Late-Late-Write SRAM Features • 256K x 36 or 512K x 18 organization • Single Read/Write control pin R/W • 3.3V or 2.5V Power Supply and I/O • Individual Byte Write Controls
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IBM0418A86LQKA
IBM0436A86LQKA
IBM0418A86SQKA
IBM0436A86SQKA
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PDF
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DS1220
Abstract: M48Z02 M48Z12
Text: M48Z02 M48Z12 5V, 16Kbit 2Kb x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM and powerfail control circuit ■ Unlimited WRITE cycles ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection
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M48Z02
M48Z12
16Kbit
M48Z02:
M48Z12:
PCDIP24
M48Z02,
M48Zand
DS1220
M48Z02
M48Z12
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PDF
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Untitled
Abstract: No abstract text available
Text: M48Z08 M48Z18 5 V, 64 Kbit 8 Kb x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM and powerfail control circuit ■ Unlimited WRITE cycles ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection
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M48Z08
M48Z18
M48Z08:
M48Z18:
PCDIP28
M48Z08,
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PDF
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Untitled
Abstract: No abstract text available
Text: M48Z02 M48Z12 5 V, 16 Kbit 2 Kb x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM and powerfail control circuit ■ Unlimited WRITE cycles ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection
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M48Z02
M48Z12
M48Z02:
M48Z12:
PCDIP24
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PDF
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Everspin Technologies
Abstract: MR25H256 22Status
Text: MR25H256 FEATURES 256Kb Serial SPI MRAM • No write delays • Unlimited write endurance • Data retention greater than 20 years • Automatic data protection on power loss • Block write protection • Fast, simple SPI interface with up to 40 MHz clock rate
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MR25H256
AEC-Q100
256Kb
MR25H256
144-bit
EST00418
M25H256
EST418
Everspin Technologies
22Status
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PDF
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k 2608
Abstract: M48Z35 M48Z35Y SOH28
Text: M48Z35 M48Z35Y 256 Kbit 32 Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ WRITE protect voltages:
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M48Z35
M48Z35Y
M48Z35:
M48Z35Y:
PCDIP28
28-lead
k 2608
M48Z35
M48Z35Y
SOH28
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PDF
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MR25H256
Abstract: No abstract text available
Text: MR25H256 256Kb Serial SPI MRAM FEATURES • No write delays • Unlimited write endurance • Data retention greater than 20 years • Automatic data protection on power loss • Block write protection • Fast, simple SPI interface with up to 40 MHz clock rate
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MR25H256
AEC-Q100
256Kb
MR25H256
144-bit
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PDF
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Untitled
Abstract: No abstract text available
Text: M48Z02 M48Z12 5 V, 16 Kbit 2 Kb x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM and powerfail control circuit ■ Unlimited WRITE cycles ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection
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Original
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M48Z02
M48Z12
M48Z02:
M48Z12:
PCDIP24
M48Z02,
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PDF
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Untitled
Abstract: No abstract text available
Text: MR25H10 1Mb Serial SPI MRAM FEATURES • No write delays • Unlimited write endurance • Data retention greater than 20 years • Automatic data protection on power loss • Block write protection • Fast, simple SPI interface with up to 40 MHz clock rate
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MR25H10
AEC-Q100
MR25H10
576-bit
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PDF
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caphat
Abstract: DS1220 M48Z02 M48Z12
Text: M48Z02 M48Z12 5 V, 16 Kbit 2 Kb x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM and powerfail control circuit ■ Unlimited WRITE cycles ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection
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Original
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M48Z02
M48Z12
M48Z02:
M48Z12:
PCDIP24
caphat
DS1220
M48Z02
M48Z12
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PDF
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Untitled
Abstract: No abstract text available
Text: MR25H256 FEATURES 256Kb Serial SPI MRAM • No write delays • Unlimited write endurance • Data retention greater than 20 years • Automatic data protection on power loss • Block write protection • Fast, simple SPI interface with up to 40 MHz clock rate
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MR25H256
256Kb
MR25H256
144-bit
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PDF
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