WS 18E Search Results
WS 18E Price and Stock
Vishay Intertechnologies WSL2010R1800FEBCurrent Sense Resistors - SMD 1/2watt .18ohms 1% |
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WSL2010R1800FEB | 5,669 |
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Vishay Intertechnologies WSL2010R0180FEBCurrent Sense Resistors - SMD 1/2watt .018ohms 1% |
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WSL2010R0180FEB | 4,358 |
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Jorjin Technologies WS2118E00AMultiprotocol Development Tools Evaluation board for WS2118-00 |
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WS2118E00A | 9 |
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Siemens 18EUE92WSContactors - Solid State Starter,Combo,SZ1 3/4,10-40A,N4SS,24VDC |
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18EUE92WS |
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Vishay Intertechnologies WSL0805R1800FEBCurrent Sense Resistors - SMD 1/8watt .18ohms 1% |
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WSL0805R1800FEB |
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WS 18E Datasheets Context Search
Catalog Datasheet |
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Document Tags |
PDF |
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Contextual Info: ADVANCE MT58LC128K16/18E1 128K X 16/18 SYNCBURST SRAM MICRON I TECHNOLOGY. MC. SYNCHRONOUS SRAM 128Kx 16/18 SRAM +3.3V SUPPLY, +2.5V I/O, FLOW-THROUGH AND SELECTABLE BURST MODE FEATURES • • • • • • • • • Fast access times: 8.5,9,10 and 11ns |
OCR Scan |
MT58LC128K16/18E1 128Kx DQlb22T | |
Contextual Info: ADVANCE M T58LC256K16/18E1 256K X 16/18 SYNCBURST SRAM MICRON I TECH N O LO G Y.ir.C SYNCHRONOUS SRAM 256KX 16/18 SRAM +3.3V SUPPLY, +2.5V I/O, FLOW-THROUGH AND SELECTABLE BURST MODE • • • • • • • • • • • • • • • • • • PIN ASSIGNMENT Top View |
OCR Scan |
T58LC256K16/18E1 256KX MT5flLC256K16/18E1 Q022711 | |
S29NS128P
Abstract: S29NS256P S29NS512P S29NS-P 44BA
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S29NS-P S29NS512P S29NS256P S29NS128P S29NS128P 44BA | |
NS512
Abstract: sample code write buffer spansion B90000h 1E30000
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S29NS-P S29NS512P S29NS256P S29NS128P NS512 sample code write buffer spansion B90000h 1E30000 | |
Contextual Info: S29NS-P MirrorBit Flash Family S29NS512P, S29NS256P, S29NS128P 512/256/128 Mb 32/16/8 M x 16 bit , 1.8 V Burst Simultaneous Read/Write, Multiplexed MirrorBit Flash Memory Data Sheet S29NS-P MirrorBit® Flash Family Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion |
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S29NS-P S29NS512P, S29NS256P, S29NS128P | |
Contextual Info: S29NS-P MirrorBit Flash Family S29NS512P S29NS256P S29NS128P 512/256/128 Mb 32/16/8 M x 16 bit , 1.8 V Burst Simultaneous Read/Write, Multiplexed MirrorBit Flash Memory Data Sheet (Advance Information) S29NS-P MirrorBit® Flash Family Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion |
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S29NS-P S29NS512P S29NS256P S29NS128P | |
NS512
Abstract: S29NS128P wireless design guide 13th S29NS256P S29NS512P S29NS-P 1A400 VDD064-64-Ball
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S29NS-P S29NS512P, S29NS256P, S29NS128P NS512 S29NS128P wireless design guide 13th S29NS256P S29NS512P 1A400 VDD064-64-Ball | |
S29NS-P
Abstract: NS512 S29NS128P S29NS256P S29NS512P bjw marking code
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S29NS-P S29NS512P S29NS256P S29NS128P NS512 S29NS128P bjw marking code | |
Contextual Info: S29NS-P MirrorBit Flash Family S29NS512P S29NS256P S29NS128P 512/256/128 Mb 32/16/8 M x 16 bit , 1.8 V Burst Simultaneous Read/Write, Multiplexed MirrorBit Flash Memory Data Sheet (Advance Information) S29NS-P MirrorBit® Flash Family Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion |
Original |
S29NS-P S29NS512P S29NS256P S29NS128P | |
8A0000Contextual Info: S29NS-P MirrorBit Flash Family S29NS512P, S29NS256P, S29NS128P 512/256/128 Mb 32/16/8 M x 16 bit , 1.8V Burst Simultaneous Read/Write, Multiplexed MirrorBit Flash Memory Data Sheet S29NS-P MirrorBit® Flash Family Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion |
Original |
S29NS-P S29NS512P, S29NS256P, S29NS128P 8A0000 | |
Contextual Info: S29NS-P MirrorBit Flash Family S29NS512P S29NS256P S29NS128P 512/256/128 Mb 32/16/8 M x 16 bit , 1.8 V Burst Simultaneous Read/Write, Multiplexed MirrorBit Flash Memory Data Sheet S29NS-P MirrorBit® Flash Family Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion |
Original |
S29NS-P S29NS512P S29NS256P S29NS128P | |
Contextual Info: S29NS-P MirrorBit Flash Family S29NS512P, S29NS256P, S29NS128P 512/256/128 Mb 32/16/8 M x 16 bit , 1.8V Burst Simultaneous Read/Write, Multiplexed MirrorBit Flash Memory Data Sheet S29NS-P MirrorBit® Flash Family Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion |
Original |
S29NS-P S29NS512P, S29NS256P, S29NS128P | |
Contextual Info: ADVANCE MT58LC64K16/18E1 64K X 16/18 SYNCBURST SRAM MICRON I TECHNOLOGY, INC. 64K x 16/18 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, +2.5V I/O, FLOW-THROUGH AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • • • • • • • • • |
OCR Scan |
MT58LC64K16/18E1 self-ti75) | |
Contextual Info: ADVANCE MT58LC128K16/18E1 128K X 16/18 SYNCBURST SRAM MICRON I TECHNOLOGY, INC. SYNCHRONOUS SRAM 128Kx 16/18 SRAM +3.3V SUPPLY, +2.5V I/O, FLOW-THROUGH AND SELECTABLE BURST MODE FEATURES • • • • Fast access times: 8.5, 9, 10, 11 and 12ns Fast OE# access times: 5 and 6ns |
OCR Scan |
MT58LC128K16/18E1 128Kx | |
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Contextual Info: ADVANCE M I^ S Q N I MT58LC256K16/18E1 256KX 16/18 SYNCBURST SRAM +3.3V SUPPLY, +2.5V I/O, FLOW-THROUGH AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • • • • • • • • • PIN ASSIGNMENT Top View Fast access times: 8.5,9,10,11 and 12ns |
OCR Scan |
MT58LC256K16/18E1 256KX 160-PIN | |
TN-58-11Contextual Info: ADVANCE l^ ld R O N 64K X MT58LC64K16/18E1 16/18 SYNCBURST SRAM +3.3V SUPPLY, +2.5V I/O, FLOW-THROUGH AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • • • • • • • • • Fast access times: 8.5, 9,10 and Tins Fast OE# access time: 5ns |
OCR Scan |
MT58LC64K16/18E1 100-lead MT5SLC64K1& TN-58-11 | |
24EB60
Abstract: transistor marking code wm9 15j100 RETMA RAILS 15EB100 B24G350 Acopian Power Supplies A050MX120 12EB120 22J100
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Contextual Info: ADVANCE M ^ R G N • 64K TECHNOLOGY. INC MT58LC64K16/18E1 16/18 SYNCBURST SRAM 64 K x 16/1 8 S R A M +3.3V SUPPLY, +2.5V I/O, FLOW-THROUGH AND SELECTABLE BURST MODE • • • • • • • • • Fast access times: 8.5, 9,10 and 11ns Fast OE# access time: 5ns |
OCR Scan |
MT58LC64K16/18E1 | |
ws 18eContextual Info: ADVANCE M T58LC256K16/18E1 256K X 16/18 SYNCBURST SRAM |U |IC R O N +3.3V SUPPLY, +2.5V I/O, FLOW-THROUGH AND SELECTABLE BURST MODE FEATURES PIN ASSIGNMENT Top View Fast access tim es: 8.5, 9, 1 0 ,1 1 and 12ns Fast O E # a ccess tim es: 5 and 6n s + 3 .3 V + 0 .3 V /-0 .1 6 5 V p o w er sup p ly (Vco) |
OCR Scan |
T58LC256K16/18E1 MTS8LC2S6K16, ws 18e | |
TN-58-11Contextual Info: ADVANCE |U |lt= R O N 256K M T 58 L C 2 5 6 K 1 6/18E1 16/18 S Y N C B U R S T SRAM X 256Kx 16/18 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, +2.5V I/O, FLOW-THROUGH AND SELECTABLE BURST MODE • • • • • • • • • • • • • • • • • • |
OCR Scan |
6/18E1 100-lead MT58LC256K16/1 TN-58-11 | |
Contextual Info: 19-1288; Rev 2; 12/11 KIT ATION EVALU E L B A IL AVA Low-Power Audio CODEC with DirectDrive Headphone Amplifiers Features The MAX9856 is a high-performance, low-power stereo audio CODEC designed for MP3, personal media players PMPs , or other portable multimedia devices. |
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96kHz 18-Bit 48kHz 10MHz 60MHz | |
HPR 1XX
Abstract: MAX9856
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MAX9856 MAX9856 HPR 1XX | |
MAX9856Contextual Info: 19-1288; Rev 0; 5/08 Low-Power Audio CODEC with DirectDrive Headphone Amplifiers Features The MAX9856 is a high-performance, low-power stereo audio CODEC designed for MP3, personal media players PMPs , or other portable multimedia devices. Using on-board stereo DirectDrive headphone amplifiers, the CODEC can output 30mW into stereo 32Ω |
Original |
MAX9856 MAX9856 T4066-5 | |
Contextual Info: ADVANCE M IC R O N I 128K TECHUOLOCV INC SYNCHRONOUS SRAM X M T58LC128K16/18E1 16/18 SYNCBURST SRAM 128Kx 16/18 SRAM +3.3V SUPPLY, +2.5V I/O, FLOW-THROUGH AND SELECTABLE BURST MODE • • • • • • • • • • • • • • • • • • Fast access times: 8 .5 ,9 ,1 0 and 11ns |
OCR Scan |
T58LC128K16/18E1 100-lead MT58LC120K16/1861 0Q227flH |