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Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: WTC3401 P-Channel Enhancement Mode Power MOSFET 3 DRAIN DRAIN CURRENT -4.2 AMPERES 1 DRAIN SOURCE VOLTAGE GATE -30 VOLTAGE 2 SOURCE Features: 3 Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Maximum Ratings TA=25℃	Original	PDF	WTC3401 OT-23 03-Sep-2013 OT-23

Catalog Datasheet

MFG & Type

PDF

Document Tags

Untitled

Abstract: No abstract text available
Text: WTC3401 P-Channel Enhancement Mode Power MOSFET 3 DRAIN DRAIN CURRENT -4.2 AMPERES 1 DRAIN SOURCE VOLTAGE GATE -30 VOLTAGE 2 SOURCE Features: 3 *Advanced trench process technology *High Density Cell Design For Ultra Low On-Resistance Maximum Ratings TA=25℃

Original

PDF

WTC3401 OT-23 03-Sep-2013 OT-23