WTS-ES701
Abstract: speach to text 100UF 1N4148 47UF 74LVX244 LT1521-3 MC74HC244ADW WTS701
Text: Winbond Text-to-Speech Evaluation System User’s Guide April 22, 2003 Version 2.01 Winbond Electronics Corporation America WTS-ES701 2727 N First Street, San Jose, CA 95134 Rev: 2.01 1 The Winbond ES701 Evaluation/Development System is a PC-based system that allows
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WTS-ES701
ES701
WTS701
WTS-ES701
speach to text
100UF
1N4148
47UF
74LVX244
LT1521-3
MC74HC244ADW
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WTs12
Abstract: No abstract text available
Text: 10 WATT SINGLE OUTPUT SWITCHING ADAPTER WTS10-SX-Y-C2 SERIES WTS available in U.S. and Europe PLUGS. RoHS GENERAL SPECIFICATION The purpose of the document is to specify the functional requirements of a 10W switching AC adapter. Features: Two pin wall mount input plug
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WTS10-SX-Y-C2
90VAC
100/240VAC
264VAC
50/60Hz
50/60Hz
230Vac
3000Vac/10mA/1Seconds
4242Vdc/10mA/1Seconds
WTs12
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transistor marking code wts
Abstract: BCR108T BCR166 BCR166F BCR166L3 BCR166T BCR166W SC75 STP8
Text: BCR166. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7 kΩ , R2 = 47 kΩ BCR166/F/L3 BCR166T/W C 3 R1 R2 1 B 2 E EHA07183 Type Marking Pin Configuration BCR166 WTs
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BCR166.
BCR166/F/L3
BCR166T/W
EHA07183
BCR166
BCR166F
BCR166L3
BCR166T
BCR166W
OT323
transistor marking code wts
BCR108T
BCR166
BCR166F
BCR166L3
BCR166T
BCR166W
SC75
STP8
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19755 Series
Abstract: WTs 22
Text: Data Sheet 19755 Series- CUSTOM RADIAL-FIN HEAT SINK BRIDGELUX P/N Form factor WAKEFIELD P/N HS Length Electrical Thermal HS TR T RISE in (W) (W) (C/W) (C) BXRA-C0802-00000 Rectangle 19755-S-AB 2.75 15 11.3 2.2 24.7 BXRA-W0802-00000 Rectangle 19755-M-AB
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BXRA-C0802-00000
19755-S-AB
BXRA-W0802-00000
19755-M-AB
BXRA-W1202-00000
19755-L-AB
BXRA-W1203-00000
19755-XL-AB
BXRA-C2002-00000
19755-XXL-AB
19755 Series
WTs 22
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D-76275
Abstract: vision goldpart
Text: Effiziente Installation und Betrieb Die Pluspunkte > Zentrale, konsolidierte Managementkonsole für effizientes SBCLifecycle-Management > Abbildung der erforderlichen Prozessstrukturen für Installation und Betrieb > Reduzierung einer Vielzahl von Verwaltungswerkzeugen
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Ni1000
Abstract: MD-1220 NLX-420 N64000 NI1000 nestor ZISC036 8bit 103G MT19003 siemens ma ni-1000
Text: MODULE Research Center http://www.module.ru Updated: 27 November 1998 Digital Neural Networks in VLSI Table I.a. Name Architecture Precision Neurons Synapses Nuralogix NLX-420 Multi-layer 1-16b x 1-16b Hecht-Nielson 100 NAP GP1, SIMD processors 32b x 32b,
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NLX-420
1-16b
1-16b
N64000
128k-2M
ZISC036
MT19003
MD-1220
Ni1000
MD-1220
NLX-420
N64000
NI1000 nestor
ZISC036
8bit 103G
MT19003
siemens ma
ni-1000
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Untitled
Abstract: No abstract text available
Text: INSTRUCTION MANUAL MANUAL DE INSTRUCCIONES MANUEL D’INSTRUCTIONS CMP-200 DIGITAL CLAMP-ON METER MEDIDOR DIGITAL CON PINZA COMPTEUR NUMERIQUE A PINCES Read and understand all of the instructions and safety information in this manual before operating or servicing this tool.
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CMP-200
CMP-200
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transistor marking code wts
Abstract: BCR108W BCR166 BCR166F BCR166W BCW66 bcr1
Text: BCR166. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7 kΩ , R2 = 47 kΩ • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 BCR166/F BCR166W
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BCR166.
BCR166/F
BCR166W
EHA07183
BCR166
BCR166F
OT323
transistor marking code wts
BCR108W
BCR166
BCR166F
BCR166W
BCW66
bcr1
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DP83906
Abstract: NE2000 VT82C926 0.8um 93C46 programmer DP83905 VT86C926 VIA Technologies NE2000 PCI
Text: VT86C926 AMAZON PCI ETHERNET CONTROLLER DATA SHEET Preliminary DATE : June 27, 1995 VIA TECHNOLOGIES, INC. PRELIMINARY RELEASE Please contact Via Technologies for the latest documentation. Copyright Notice: Copyright 1995, Via Technologies Incorporated. Printed in Taiwan. ALL RIGHTS RESERVED.
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VT86C926
VT86C926
DP83906
NE2000
VT82C926
0.8um
93C46 programmer
DP83905
VIA Technologies
NE2000 PCI
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Untitled
Abstract: No abstract text available
Text: BCR166. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7 kΩ , R2 = 47 kΩ • Pb-free (RoHS compliant) package • Qualified according AEC Q101 BCR166 BCR166W C 3
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BCR166.
BCR166
BCR166W
EHA07183
OT323
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transistor marking code wts
Abstract: No abstract text available
Text: BCR166. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7 kΩ , R2 = 47 kΩ • Pb-free (RoHS compliant) package • Qualified according AEC Q101 BCR166 BCR166W C 3
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BCR166.
BCR166
BCR166W
EHA07183
dissipationBCR166,
BCR166W,
OT323
transistor marking code wts
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BL SUPER SERVO AMPLIFIER
Abstract: NDW2 NVE sdt WPL1 nw90 Hitachi DSA00279 Nippon capacitors
Text: ADE-207-179 Z HD153044TF 90-Mbps Single Chip Read Channel 1st. Edition Sep. 1995 Description Read Pulse Detector & Servo Functions : The HD153044TF is fully integrated single-chip Data Channel LSI for high performance magnetic disk drives. Function block include the automatic
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ADE-207-179
HD153044TF
90-Mbps
HD153044TF
D-85622
BL SUPER SERVO AMPLIFIER
NDW2
NVE sdt
WPL1
nw90
Hitachi DSA00279
Nippon capacitors
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heartbeat checker circuit
Abstract: MAR7 100-PIN 10BASE2 10BASE5 84-PIN AD10 MX98902A mar737
Text: INDEX MX98902A ETHERNET NETWORK CONTROLLER FOR TWISTED-PAIR FEATURES • Compatible with IEEE 802.3 CSMA/CD standard Ethernet, Cheapernet, and Twisted-Pair 10 BASET • Two 16-bit DMA channels • 16-byte internal FIFO with programmable threshold • •
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MX98902A
16-bit
16-byte
84-pin
100-pin
DP83902
MX98902
10BASE5)
10BASE2)
10BASE-T)
heartbeat checker circuit
MAR7
10BASE2
10BASE5
AD10
MX98902A
mar737
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L53V
Abstract: ks 120
Text: GP1 L53V GPI L53V Compact, Hgh Sensing Accuracy Type Photointermpter 9 Features 1. Compact type 2. High sensing accuracy Slit width: O.5mm 3. High current transfer ratio (CTR : MIN. 30% at 1,= lrnA) 4. PWB direct mounting type • Outline Internal connection
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SBL1040CT
Abstract: IC SBL1040CT
Text: SBL1030CT AND SBL1040CT SCHOTTKY RECTIFIER Reverse Voltage - 30 and 40 Volts Forward Current - 10.0 Amperes FEATURES TO-22QAB ♦ Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 ♦ Metal silicon junction, majority carrier conduction
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SBL1030CT
SBL1040CT
O-22QAB
O-220AB
MIL-STD-750,
SSL1030CT
SBL1040CT
IC SBL1040CT
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V442
Abstract: No abstract text available
Text: ADVANCE MICRON I m “ rn,“f,.T M T24D836 8M EGX 36, 16 M EGX 18 D R A MM O D U LE DRAM MODULE 8 MEG X 36,16 MEG x18 NEW I FAST PAGE MODE FEATURES PIN ASSIGNMENT Top View OPTIONS 72-Pin SIMM ( 1 - 22) MT24D836M/G nfmrnTTmTtmrnnTrnrrrrm MARKING • Timing
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72-pin
104mW
152mW
048-cycle
MT24D836M/G
MT24DS36
C1992,
T24D836
A0-A10;
V442
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MWT671HP
Abstract: No abstract text available
Text: MwT - 6 18 GHz High Power G aAs FET MicroWave Technology 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES 292 tool iseJ I—I » —I U J Isol - 33*-CHIP THICKNESS = 12 5 M ORONS MwT-6 • • • • • • 0.5 WATT POWER OUTPUT AT 12 GHZ
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-F54-
MWT671HP
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Untitled
Abstract: No abstract text available
Text: MT4C1004J 4 MEG X 1 DRAM |U |IC = R O N 4 MEG X 1 DRAM DRAM DRAM FAST PAGE MODE FEATURES • Industry standard xl pinout, timing, functions and packages • High-performance, CMOS silicon-gate process • Single +5V ±10% power supply • Low power, 3mW standby; 225mW active, typical
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MT4C1004J
225mW
024-cycle
20-Pin
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Untitled
Abstract: No abstract text available
Text: bbE d MICROÜIAVE TECHNOLOGY • biE m ao ooooebü a m hm riiiv MwT - 6 18 GHz High Power GaAs FET MicroWave Technology n p 4268 Solar Way Fremont, CA 94538 510-651-6700 F A X 510-651-2208 FEATURES n I— I r ■ n 100 IsoJ Is o i I— 130—1 is o l Is J
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MWT773HP
Abstract: 12GHZ
Text: bbE D MI CR O W A V E T E C H N O L O G Y • blEMlDG 7^7 HMRIilV MwT - 7 18 GHz Medium Power GaAs FET MicroWave Technology r * i FEATURES r 9! _j U t Û lo»J bo»J 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 J i • +20 dBm POWER OUTPUT AT 12 GHz
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bl241DG
-F58-
MWT773HP
12GHZ
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Untitled
Abstract: No abstract text available
Text: MwT-4 26 GHz Low Noise GaAs FET M ic r o w a v e T e c h n o l o g y Unitsinixm -► j 50 I * - 1.5dB NOISE FIGURE AT 12 GHZ HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY METAUGOLD GATE 180 MICRON GATE WIDTH CHOICE OF CHIP AND TWO PACKAGE TYPES \+m *\ 50 k 356
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marking djw
Abstract: No abstract text available
Text: |U |IC =R O N MT4C4005 1 MEG x 4 DRAM FAST PAGE MODE, WRITE-PER-BIT FEATURES • Industry standard x4 pinout, timing, functions and packages • High performance, CMOS silicon gate process • Single +5V±10% power supply • Low power, 3mW standby; 225mW active, typical
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MT4C4005
225mW
1024-cycle
20-Pin
marking djw
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MwT-173
Abstract: MWT-17
Text: MICROWAVE V bhE D TECHNOLOGY j • b l^ M lD D □□□□25b U IIRIilV MwT -1 F T M U =103 ■ 12 GHz High Gain GaAs FET . MicroWave Technology 4268 Solar Way Fremont, CA 94538 510-651-6700 F A X 510-651-2208 FEATURES • 10 dB GAIN AT 12 GHz • EXCELLENT FOR FEEDBACK AMPLIFIER
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-F20-
MwT-173
MWT-17
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dp8390cn
Abstract: 5030N DP8390C-1 MAR6
Text: DP8390C-1 /NS32490C-1 N A TL S E N I C O N D { L I N E A R } IDE D | b S Q H E 4 O D b b V S ? b. | PRELIMINARY National Semiconductor r - 7 ^ - ^ 9 DP8390C-1/NS32490C-1 Network Interface Controller Table of Contents General Description The DP8390C-1 /NS32490C-1 Network Interface Controller
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DP8390C-1
/NS32490C-1
/NS32490C-1
DP8390.
TL/F/9345-55
dp8390cn
5030N
MAR6
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