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    X 075F Search Results

    X 075F Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    CD54HCT4075F3A Texas Instruments High Speed CMOS Logic Triple 3-Input OR Gates 14-CDIP -55 to 125 Visit Texas Instruments Buy
    CD54HC4075FK Texas Instruments High Speed CMOS Logic Triple 3-Input OR Gates 20-LCCC -55 to 125 Visit Texas Instruments Buy
    CD54HC4075F3A Texas Instruments High Speed CMOS Logic Triple 3-Input OR Gates 14-CDIP -55 to 125 Visit Texas Instruments Buy
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    X 075F Price and Stock

    Panduit Corp N050X075FJJ

    LABEL STANDARD 0.50" X 0.75" WHT
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    DigiKey N050X075FJJ Bulk 10,000 10,000
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    Avnet Americas N050X075FJJ Roll 8 Weeks 10,000
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    Newark N050X075FJJ Pack 1
    • 1 $398.58
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    • 100 $328.5
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    Master Electronics N050X075FJJ 20,000
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    Panduit Corp N100X075FJJ

    LABEL STANDARD 1" X 0.75" WHT
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    Panduit Corp C150X075FJJ

    LASER/INK JET, NETWORK LABEL, AD
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    Panduit Corp N025X075FJJ

    LABEL STANDARD 0.25" X 0.75" WHT
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    Remington Industries 0.125X0.75FLT6061T6511-2

    ALUM PLATE 1/8" x 3/4" x 2"
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    DigiKey 0.125X0.75FLT6061T6511-2 Box 1
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    X 075F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Spansion gl128

    Abstract: sa5888 SPANSION gl512 27631 S29PL127J S75PL127J S75PL127JBD Spansion s29pl127j GL128 GL512
    Text: S75PL127J MCPs Stacked Multi-Chip Product MCP CODE Flash, pSRAM and DATA Flash 128M (8M x 16-Bit CMOS 3.0 VoltOnly, Simultaneous Operation, Page Mode CODE Flash Memory, with 64M/32M (4M/2M x 16-Bit) pSRAM and 512M/256/128M (32M/16M/8M x 16Bit) Data Flash Memory


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    PDF S75PL127J 16-Bit 64M/32M 16-Bit) 512M/256/128M 32M/16M/8M 16Bit) 110ns Spansion gl128 sa5888 SPANSION gl512 27631 S29PL127J S75PL127JBD Spansion s29pl127j GL128 GL512

    SPANSION gl512

    Abstract: GL512 S29GL256N 32mb GL512N TLD084 S71GL128NB0 S71GL256NB0 S71GL512NB0 S29GLxxxN GL128n
    Text: S71GL512NB0/S71GL256NB0/ S71GL128NB0 Stacked Multi-chip Product MCP 512/256/128 Megabit (32/16/8 M x 16-bit) CMOS 3.0 Volt-only MirrorBitTM Page-mode Flash Memory with 32 Megabit (2M x 16-bit) pSRAM ADVANCE INFORMATION Distinctive Characteristics MCP Features


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    PDF S71GL512NB0/S71GL256NB0/ S71GL128NB0 16-bit) S71GL128N, S71GL256N) S71GL512N) TLD084) TLA084) SPANSION gl512 GL512 S29GL256N 32mb GL512N TLD084 S71GL128NB0 S71GL256NB0 S71GL512NB0 S29GLxxxN GL128n

    SA293

    Abstract: SA273 988000
    Text: DATASHEET Am29LV256M 256 Megabit 16 M x 16-Bit/32 M x 8-Bit MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 volt read, erase, and program operations


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    PDF Am29LV256M 16-Bit/32 16-word/32-byte 56-pi SA293 SA273 988000

    CD8000

    Abstract: 1d60
    Text: DATASHEET Am29LV256M 256 Megabit 16 M x 16-Bit/32 M x 8-Bit MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 volt read, erase, and program operations


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    PDF Am29LV256M 16-Bit/32 16-word/32-byte 56-pi CD8000 1d60

    E78000

    Abstract: SA370 Am29LV256MH98R L256MH113R L256MH128 L256MH123R LAC064 11D00
    Text: ADVANCE INFORMATION Am29LV256M 256 Megabit 16 M x 16-Bit/32 M x 8-Bit MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with Enhanced VersatileI/OTM Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 volt read, erase, and program operations


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    PDF Am29LV256M 16-Bit/32 128-word/256-byte 8-word/16-byte LAC064--64-Ball TS056 TSR056 E78000 SA370 Am29LV256MH98R L256MH113R L256MH128 L256MH123R LAC064 11D00

    SA326

    Abstract: 06C00 988000 04A0000 SA-450
    Text: ADVANCE INFORMATION Am29LV256M 256 Megabit 16 M x 16-Bit/32 M x 8-Bit MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 volt read, erase, and program operations


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    PDF Am29LV256M 16-Bit/32 16-word/32-byte 00FFh. SA326 06C00 988000 04A0000 SA-450

    SA508

    Abstract: Am29LV256M SA285 SA276 CD8000 E68000 988000
    Text: ADVANCE INFORMATION Am29LV256M 256 Megabit 16 M x 16-Bit/32 M x 8-Bit MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 volt read, erase, and program operations


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    PDF Am29LV256M 16-Bit/32 16-word/32-byte SA508 SA285 SA276 CD8000 E68000 988000

    L256ML

    Abstract: SA4871 BD8000 sa340 transistor SA427 SA370 8A000 740-0007 Am29LV256 SA36-110
    Text: ADVANCE INFORMATION Am29LV256M 256 Megabit 16 M x 16-Bit/32 M x 8-Bit MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 volt read, erase, and program operations


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    PDF Am29LV256M 16-Bit/32 128-word/256-byte 8-word/16-byte L256ML SA4871 BD8000 sa340 transistor SA427 SA370 8A000 740-0007 Am29LV256 SA36-110

    SA285

    Abstract: sa317 AM29LV256MH94R
    Text: ADVANCE INFORMATION Am29LV256M 256 Megabit 16 M x 16-Bit/32 M x 8-Bit MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with Enhanced VersatileI/OTM Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 volt read, erase, and program operations


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    PDF Am29LV256M 16-Bit/32 128-word/256-byte 8-word/16-byte LAC064, SA285 sa317 AM29LV256MH94R

    SA487

    Abstract: L256ML123R SA473 SA444 SA475 10a000 sa330 SA441 0E20000 SA338
    Text: ADVANCE INFORMATION Am29LV256M 256 Megabit 16 M x 16-Bit/32 M x 8-Bit MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 volt read, erase, and program operations


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    PDF Am29LV256M 16-Bit/32 16-word/32-byte 00FFh. SA487 L256ML123R SA473 SA444 SA475 10a000 sa330 SA441 0E20000 SA338

    sa450

    Abstract: 64mb 80 pin s29gl128n S29GL S29GL128N S29GL256N S29GL512N S71GS128NB0 S71GS256NC0 S29GL date code marking
    Text: S71GS256/128N based MCPs Stacked Multi-Chip Product MCP 256/128 Megabit (16/8M x 16-bit) CMOS 3.0 Volt VCC and 1.8 V VIO MirrorBitTM Uniform Sector Page-mode Flash Memory with 64/32 Megabit (4/2M x 16-bit) 1.8V pSRAM Data Sheet ADVANCE INFORMATION Distinctive Characteristics


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    PDF S71GS256/128N 16/8M 16-bit) TLA084) S71GS S29GL sa450 64mb 80 pin s29gl128n S29GL128N S29GL256N S29GL512N S71GS128NB0 S71GS256NC0 S29GL date code marking

    TLD084

    Abstract: TLD084-84-ball S71GL128NC0 S71GL256NC0 S71GL512NC0 56-pin s29gl512 S29GL256N 32mb SA5250 S29GL128* FOOTPRINT
    Text: S71GLxxxNC0 Stacked Multi-chip Product MCP 512/256/128 Megabit (32/16/8 M x 16-bit) CMOS 3.0 Volt-only MirrorBitTM Page-mode Flash Memory with 64 Megabit (4M x 16-bit) pSRAM Data Sheet ADVANCE INFORMATION Distinctive Characteristics MCP Features „ Power supply voltage of 2.7 to 3.1V


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    PDF S71GLxxxNC0 16-bit) S71GL128N, S71GL256N) S71GL512N) TLD084) TLA084) TLD084 TLD084-84-ball S71GL128NC0 S71GL256NC0 S71GL512NC0 56-pin s29gl512 S29GL256N 32mb SA5250 S29GL128* FOOTPRINT

    M29W128GL

    Abstract: No abstract text available
    Text: M29W128GH M29W128GL 128 Mbit 16 Mb x 8 or 8 Mb x 16, page, uniform block 3 V supply Flash memory Features • ■ Supply voltage – VCC = 2.7 to 3.6 V for Program, Erase and Read – VCCQ = 1.65 to 3.6 V for I/O buffers – VPPH = 12 V for Fast Program (optional)


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    PDF M29W128GH M29W128GL TSOP56 TBGA64 64-byte M29W128GL

    M29W128GL

    Abstract: M29W128GH m29W128GL70 TSOP56 M29W128 VIH22 numonyx m29 hack
    Text: M29W128GH M29W128GL 128 Mbit 16 Mb x 8 or 8 Mb x 16, page, uniform block 3 V supply Flash memory Features • ■ Supply voltage – VCC = 2.7 to 3.6 V for Program, Erase and Read – VCCQ = 1.65 to 3.6 V for I/O buffers – VPPH = 12 V for Fast Program (optional)


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    PDF M29W128GH M29W128GL TSOP56 TBGA64 64-byte M29W128GL M29W128GH m29W128GL70 TSOP56 M29W128 VIH22 numonyx m29 hack

    m29dw128g

    Abstract: No abstract text available
    Text: M29DW128G 128 Mbit 8 Mb x 16, multiple bank, page, dual boot 3 V supply Flash memory Features • Supply voltage – VCC = 2.7 to 3.6 V for program, erase and read – VCCQ = 1.65 to 3.6 V for I/O buffers – VPPH = 9 V for fast program (optional) ■ Asynchronous random/page read


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    PDF M29DW128G 32-word m29dw128g

    hz dpx 1100 audio amplifier

    Abstract: No abstract text available
    Text: JUNE. 2004 Ver 0.0.1 MAGNACHIP SEMICONDUCTOR 8-BIT SINGLE-CHIP MICROCONTROLLERS HMS81C2748/60 User’s Manual Preliminary Version 0.0.1 Published by MCU Application Team 2004 MagnaChip Semiconductor All right reserved. Additional information of this manual may be served by MagnaChip Semiconductor offices in Korea or Distributors and Representatives listed at address directory.


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    PDF HMS81C2748/60 useIP30 FIP15 P57/FIP23 P61/FIP25 P60/FIP24 P67/FIP31 P70/FIP32 P80/FIP40 P81/FIP41 hz dpx 1100 audio amplifier

    Untitled

    Abstract: No abstract text available
    Text: Advance Data Sheet March 1996 ÉHAT&T Microelectronics JW050F, JW075F, JW100F, JW150F Power Modules: dc-dc Converters; 36 Vdc to 75 Vdc Input; 33 W to 99 W Features • Small size: 2.40 in. x 2.28 in. x 0.50 in. ■ High power density ■ High efficiency: 80% typical


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    PDF JW050F, JW075F, JW100F, JW150F JW150F JW050F JW075F

    X 075F

    Abstract: JW050F
    Text: Advance Data Sheet March 1996 i ^ AT&T Microelectronics JW050F, JW075F, JW100F, JW150F Power Modules: dc-dc Converters; 36 Vdc to 75 Vdc Input; 33 W to 99 W Features • Small size: 2.40 in. x 2.28 in. x 0.50 in. ■ High power density ■ High efficiency: 80% typical


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    PDF JW050F, JW075F, JW100F, JW150F 73/23/ta DS95-024EPS X 075F JW050F

    GMM791100BNS70

    Abstract: ras 0515 irp 540
    Text: @ LG Semicon. Co. LTD. Description Features The GMM791100BNS is an 1M x 9 bits Dynamic RAM Module which is assembled 2 pieces of 4M bit DRAM GM71C4400BJ, 1M x 4 sealed in 20 pin SOJ package and lM xl DRAM in 20 pin SOJ package. The GMM791100BNS is a socket type memory


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    PDF GMM791100BNS GM71C4400BJ, GMM791100BNS-60 GMM791100BNS-70 GMM791100BNS70 ras 0515 irp 540

    Untitled

    Abstract: No abstract text available
    Text: Is A T fc T » Microelectronics Advance Data Sheet April 1995 Economy Series JW050F1-E, JW075F1-E Power Modules: dc-dc Converters; 36 Vdc to 72 Vdc Input; 33 W to 49.5 W Features • Small size: 2.40 in. x 2.28 in. x 0.50 in. ■ High power density ■ High efficiency: 79% typical


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    PDF JW050F1-E, JW075F1-E JW050F1-E DS95-056EPS

    4116 ram

    Abstract: WD9918 D9928 lm1889 circuit diagram WD9929 rt 9928 WD9918/WD9928/WD9929
    Text: W E S T E R N D IG IT A L WD9918/WD9928/WD9929 Video Display Processors FEATURES • SINGLE-CHIP SOLUTION FOR INTERFACING COLOR TVS [EXCLUDING RANDOM-ACCESS MEMORY RAM AND RADIO FREQUENCY (RF) MODULATOR (WD9918 ONLY)] RAS CAS AD7 AD6 256 X 192 RESOLUTION ON TV SCREEN


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    PDF WD9918/9928/9929 WD9918/WD9928/WD9929 WD9918 40-PIN WD9928/WD9929 D9928 WD9928/9929 4116 ram D9928 lm1889 circuit diagram WD9929 rt 9928

    Untitled

    Abstract: No abstract text available
    Text: Type 361R, 105 °C, Miniature, Industrial Grade, Radial Leaded High-value, High Ripple, Low ESR & ESL Type 361R capacitors are for industrial applications from —40 °C to +105 °C. They deliver excellent ripple capability and low ESR and ESL. Also available with three mounting


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    PDF 361R330M 350ER2 61R330M350HH2 22x22 361R390M350FF2 16x32 361R470M350FQ2 16x36 361R470M 350HK2

    FD1793

    Abstract: J-K Flip-Flop 7676 E608 c34102 fd 1793 32240C 8085 interrupt f608 FAD70 D302 PAI
    Text: Advanced Micro Computers A subsidiary of A dvanced M icro D evices Am95/6120 Dual-Density Floppy Disk Controller Firmware Listing 00680153 REVISION RECORD REVISION A DESCRIPTION Initial Issue 8 /1 6 /8 0 B Manual Reprinted To Support Firmware Version 1.2


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    PDF Am95/6120 AM95/612Ã FW612Ã 64-BYTE: FD1793 J-K Flip-Flop 7676 E608 c34102 fd 1793 32240C 8085 interrupt f608 FAD70 D302 PAI

    Untitled

    Abstract: No abstract text available
    Text: JK ft REV. 2 DO N DATE S.Oo t .2010 n NO. o n g W ~I DR . D E S C R IPTIO N REVISED 070845 n FO RM T.SHIINA DESIGNATION & IS APPD. APPD. OHK. KFvft/kATSi/ T .H lW s H fM & BN0A 0 0 3 037 1 ["CONNECTION No.37;SINGLE BRAID COAXIAL CABLE OF 1.50 CHARACTERISTIC IMPEDANCE : C=75Q


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    PDF 0-75ft