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    X BAND PULSED AMPLIFIER Search Results

    X BAND PULSED AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4162F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4206F Toshiba Electronic Devices & Storage Corporation Intelligent power device 500V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    X BAND PULSED AMPLIFIER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Solid State Pulsed Power Amplifier High Power, Broadband, X Band Solid State RF Amplifier Aethercomm P/N SSPA 8.6-9.5-15 is a high power X • Operation from 8.6 to 9.5 GHz Minimum band solid state pulsed power amplifier that operates • Pulsed RF and Pulsed DC Operation


    Original     		PDF

    SSPA

    Abstract: x-Band High Power Amplifier x-band power transistor Solid State Microwave x band high power amplifier x band receiver x band pulsed amplifier x band satellite
    Text: Solid State Power Amplifier High Power X Band Solid State RF Amplifier Aethercomm P/N SSPA 9.5-10.5-20 is a high power, • 20 watts typical CW or pulsed RF power X band, solid state power amplifier. Class AB biasing • Operation from 9.5 to 10.5 GHz affords high output power pulsed or CW while


    Original     		PDF

    X-band radar module

    Abstract: MAAP-009748-000000
    Text: MAAP-009748-000000 X-Band 17W Pulsed Power Amplifier Module 8.5 - 11.0 GHz 2010 Data Sheet v1 The most important thing we build is trust Features Description • Nominal 17W Peak Output Power The Cobham Sensor Systems X-Band 17W Module is a class A biased GaAs


    Original     		PDF MAAP-009748-000000 X-band radar module MAAP-009748-000000

    AETHERCOMM

    Abstract: Acros
    Text: Solid State Power Amplifier High Power X Band Solid State RF Amplifier Aethercomm P/N SSPA 7.1-7.3-10 is a High Power X • 5 watts linear or pulsed RF power min Band SSPA used in the DSCC Exciter-Transmitter • Operation from 7.1 to 7.3 GHz Subsystem. It is used as a TWT driver amplifier. It


    Original     		PDF

    MS2601

    Abstract: radar amplifier s-band
    Text: MS2601 NPN RF POWER TRANSISTOR PACKAGE STYLE 400 x 400 2NL FLG DESCRIPTION: 1 The ASI MS2601 is Common Base Device Designed for Pulsed S-Band Radar Amplifier Applications up to 3.1 GHz. 2 4 3 FEATURES INCLUDE: • Input/Output Matching • Gold Metallization


    Original     		PDF MS2601 MS2601 radar amplifier s-band

    ASI2223-20

    Abstract: ASI10533
    Text: ASI2223-20 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .310 2L FLG The ASI 2223-20 is a Common Base Device Designed for Pulsed S-Band Radar Amplifier Applications A 4x .062 x 45° .040 x 45° C 2xB ØE D F G H FEATURES: I • Internal Input/Output Matching Networks


    Original     		PDF ASI2223-20 ASI10533 ASI2223-20 ASI10533

    Untitled

    Abstract: No abstract text available
    Text: M/A-COM Technology Solutions Inc. 100 Chelmsford Street Lowell, Massachusetts 01851 +1 978.656.2500 macomtech.com PRESS RELEASE MACOM Launches New X-Band High Power Amplifiers for Commercial Radar and Communication Applications Two-stage and three-stage MMIC Amplifiers Boast up to 41dBm of Saturated Pulsed Output Power and 40%


    Original     		PDF 41dBm MAAP-015030 41drized

    Untitled

    Abstract: No abstract text available
    Text: MAAP-015030 Power Amplifier, 13 W 8.5 - 11.75 GHz Rev. V2 Features •        12 W X-Band Power Amplifier 21 dB Large Signal Gain 41 dBm Saturated Pulsed Output Power 40% Power Added Efficiency On Chip Gate Bias Circuit 100% On-wafer DC & RF Power Tested


    Original     		PDF MAAP-015030 MIL-STD-833 MAAP-015030

    Untitled

    Abstract: No abstract text available
    Text: MAAP-015035 Power Amplifier, 12 W 8.5 - 11.5 GHz Rev. V1 Features •        12 W X-Band Power Amplifier 36 dB Small Signal Gain 41 dBm Saturated Pulsed Output Power 40% Power Added Efficiency On Chip Gate Bias Circuit 100% On-wafer DC & RF Power Tested


    Original     		PDF MAAP-015035 MIL-STD-833 MAAP-015035

    Untitled

    Abstract: No abstract text available
    Text: April 28, 2014 MACOM Launches New X-Band High Power Amplifiers for Commercial Radar and Communication Applications Two-stage and three-stage MMIC Amplifiers Boast up to 41dBm of Saturated Pulsed Output Power and 40% Power Added Efficiency LOWELL, Mass.- BUSINESS WIRE - M/A-COM Technology Solutions Inc. ("MACOM"), a leading supplier of high performance


    Original     		PDF 41dBm MAAP-015030 41dBm, com/multimedia/home/20140428005116/en/

    x-band power transistor

    Abstract: x band pulsed amplifier
    Text: CHA5010a X Band Driver Amplifier GaAs Monolithic Microwave IC Description This CHA5010a is a two-stage monolithic driver amplifier. The circuit is manufactured with a standard MESFET process : via holes through the substrate, air bridges and electron beam gate lithography.


    Original     		PDF CHA5010a CHA5010a 27dBm DSCHA50108117 x-band power transistor x band pulsed amplifier

    SSPA

    Abstract: No abstract text available
    Text: Solid State Pulsed Power Amplifier High Power Pulsed L Band Solid State RF Amplifier Aethercomm P/N SSPA 1.08-1.10-10 is a high power, • Minimum output power = 40 Watts 40 watt pulsed, L band SSPA used in Secondary • Pulse droop < 0.05 dB for a 1 uSec pulse


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    mmm6022

    Abstract: MMM6025
    Text: Freescale Semiconductor Advance Information MMM6025/D Rev. 4, 12/2004 MMM6025 Package Information Case 1603-2 9.85 x 9.0 × 1.4 mm HDI Organic Multi-Chip Module MMM6025 Quad-Band GSM/GPRS Power Amplifier Front-End Module with PA and Antenna Switch 1 Introduction


    Original     		PDF MMM6025/D MMM6025 MMM6025 GSM850, mmm6022

    SAS 251

    Abstract: for 2090 ic chip
    Text: CHA5010b RoHS COMPLIANT X Band Driver Amplifier GaAs Monolithic Microwave IC Description This CHA5010b is a two-stage monolithic driver amplifier. The circuit is manufactured with a standard MESFET process : via holes through the substrate, air bridges and


    Original     		PDF CHA5010b CHA5010b 27dBm DSCHA50100096 05-Apr-00 SAS 251 for 2090 ic chip

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Advance Information MMM6025 Rev. 5, 02/2005 MMM6025 Package Information Case 1603-2 9.85 x 9.0 × 1.4 mm HDI Organic Multi-Chip Module MMM6025 Quad-Band GSM/GPRS Power Amplifier Front-End Module with PA and Antenna Switch 1 Introduction


    Original     		PDF MMM6025 MMM6025 GSM850,

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Advance Information Document Number: MMM6025 Rev. 5.1, 03/2005 MMM6025 Package Information Case 1603-2 9.85 x 9.0 × 1.4 mm HDI Organic Multi-Chip Module MMM6025 Quad-Band GSM/GPRS Power Amplifier Front-End Module with PA and Antenna Switch


    Original     		PDF MMM6025 MMM6025 MMM6025R2

    MMM6025

    Abstract: MMM6025R2
    Text: Freescale Semiconductor Advance Information Document Number: MMM6025 Rev. 5.1, 03/2005 MMM6025 Package Information Case 1603-2 9.85 x 9.0 × 1.4 mm HDI Organic Multi-Chip Module MMM6025 Quad-Band GSM/GPRS Power Amplifier Front-End Module with PA and Antenna Switch


    Original     		PDF MMM6025 MMM6025R2 MMM6025 GSM850, MMM6025R2

    MMIC X-band amplifier

    Abstract: No abstract text available
    Text: RFHA5966A RFHA5966AX Band 10W High Power Amplifier GaAs MMIC X BAND 10W HIGH POWER AMPLIFIER GaAs MMIC Die Size: 4500m x 4000m VD1 VD2 Features      20dB Gain +41dBm Saturated Output Power 40% Power Added Efficiency 100% On Wafer DC and RF


    Original     		PDF RFHA5966A RFHA5966AX 41dBm RFHA5966A Radar023 1N4148, DS111023 MMIC X-band amplifier

    RF Power Amplifier 125KHz

    Abstract: RFHA5966AX 4500m 1n4148 die GAAS FET AMPLIFIER x-band 10w RFHA5966A x-Band Hemt Amplifier 95GHZ 10Ghz RF Power 10w amplifier "15 GHz" power amplifier 41dBm
    Text: RFHA5966A RFHA5966AX Band 10W High Power Amplifier GaAs MMIC X BAND 10W HIGH POWER AMPLIFIER GaAs MMIC Die Size: 4500m x 4000m VD1 VD2 Features      20dB Gain +41dBm Saturated Output Power 40% Power Added Efficiency 100% On Wafer DC and RF


    Original     		PDF RFHA5966AX RFHA5966A 4500m 4000m 41dBm RFHA5966A 1N4148, RF Power Amplifier 125KHz 1n4148 die GAAS FET AMPLIFIER x-band 10w x-Band Hemt Amplifier 95GHZ 10Ghz RF Power 10w amplifier "15 GHz" power amplifier 41dBm

    Untitled

    Abstract: No abstract text available
    Text: Technical Data MMM5062/D Rev. 3, 9/2002 MMM5062 Quad-Band GSM GPRS 3.5 V Power Amplifier Scale 1:1 Package Information Plastic Package Case 1383 (Module, 7x7 mm) Ordering Information Device Device Marking Package MMM5062 See Figure 30 Module The MMM5062 is a quad-band single supply RF Power Amplifier for GSM850/GSM900/


    Original     		PDF MMM5062/D MMM5062 MMM5062 GSM850/GSM900/ DCS1800/PCS1900 GSM850/900 DCS1800 PCS1900

    MMM6025

    Abstract: No abstract text available
    Text: Freescale Semiconductor Advance Information MMM6025/D Rev. 3.0, 12/2004 MMM6025 Package Information Case TBD Organic Multi-Chip Module MMM6025 Quad-Band GSM/GPRS Power Amplifier Front-End Module with PA and Antenna Switch 1 Introduction The MMM6025 is a 50 Ω Tx Power Amplifier


    Original     		PDF MMM6025/D MMM6025 MMM6025 GSM850,

    TRANSISTOR 1383

    Abstract: gsm crosstalk mesfet datasheet by motorola motorola gsm range power amplifier module DCS1800 GSM900 MMM5062 PCS1900
    Text: Technical Data MMM5062/D Rev. 1, 06/2002 MMM5062 Quad-Band GSM GPRS 3.5 V Power Amplifier Scale 1:1 Package Information Plastic Package Case 1383 (Module, 7x7 mm) Ordering Information Device Device Marking Package MMM5062 See Figure 30 Module The MMM5062 is a quad-band single supply RF Power Amplifier for GSM850/GSM900/


    Original     		PDF MMM5062/D MMM5062 MMM5062 GSM850/GSM900/ DCS1800/PCS1900 GSM850/900 DCS1800 TRANSISTOR 1383 gsm crosstalk mesfet datasheet by motorola motorola gsm range power amplifier module GSM900 PCS1900

    varian klystron

    Abstract: UG-573 B568 klystron 1CE-279A klystron varian RCA-8568 8568 two cavity klystron klystron tubes
    Text: 8568 Super-Power Klystron FIVE-RESONATOR, F I X E D - T U N E D , M A GN E TI CA LL Y- FO C US E D WATER-COOLED TYPE 2 1-MEGAWATT PEAK PULSE OUTPUT AT 285 6 M c / s For RF-Pulsed Amplifier inS-Band Accelerator Linear Service ELECTRICAL Heater, f o r M a trix -T y p e O x ide -C oa te d


    OCR Scan     		PDF 21-MEGAWATT 00-inch varian klystron UG-573 B568 klystron 1CE-279A klystron varian RCA-8568 8568 two cavity klystron klystron tubes

    SAS 251

    Abstract: No abstract text available
    Text: u n ite d m o n o lit h ic se m ico n d u cto rs CHA5010a o e ° 9V X Band Driver Amplifier GaAs Monolithic Microwave IC Description This CHA5010a is a two-stage monolithic driver amplifier. The circuit is manufactured with a standard MESFET process : via holes


    OCR Scan     		PDF CHA5010a CHA5010a 27dBm 13dBm) DSCHA50109033 SAS 251