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    X-BAND POWER AMPLIFIER Search Results

    X-BAND POWER AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MGN1S1208MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1D120603MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-6/-3V GAN Visit Murata Manufacturing Co Ltd
    MGN1S1212MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-12V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0508MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0512MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-12V GAN Visit Murata Manufacturing Co Ltd

    X-BAND POWER AMPLIFIER Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    CPI Helix tube

    Abstract: WRD-650 90 KW blower VTX6389L3 MIMIC control panel MKT-202
    Text: CPI 1.0kW X-Band TWT Amplifier for Instrumentation Applications X- Band The VZX-2783C1 x-Band 1.0 kW TWT High Power Amplifier features high efficiency and power for EMC/EMI testing. Safety Provides 1000 watts of power in the 8.0 to 12.75 GHz frequency band in a compact 19inch rack-mount dual drawer configuration for


    Original     		VZX-2783C1 19inch MKT-202, CPI Helix tube WRD-650 90 KW blower VTX6389L3 MIMIC control panel MKT-202 PDF

    solid state amplifier

    Abstract: operation of class c amplifier
    Text: Solid State Power Amplifier High Power, Broadband, X Band Solid State RF Amplifier Aethercomm P/N SSPA 8.6-9.5-10 is a high power X • Operation from 8.6 to 9.5 GHz Minimum band solid state power amplifier that operates from • 15 Watts Typical Output Power Across Band @ 25 C


    Original     		PDF

    CHA5115-99F

    Abstract: x-band power transistor 6089 3 129-00 CHA5115
    Text: CHA5115-99F RoHS COMPLIANT X-band Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA5115-99F is a monolithic two-stage GaAs medium power amplifier designed for X-band applications. The MPA provides typically 28dBm output power associated to 35% power added


    Original     		CHA5115-99F CHA5115-99F 28dBm 8-12GHz 28dBm DSCHA51150313 x-band power transistor 6089 3 129-00 CHA5115 PDF

    X-band amplifier

    Abstract: CHA7115 x-band power transistor x-Band High Power Amplifier
    Text: CHA7115 X-band High Power Amplifier GaAs Monolithic Microwave IC Description Vg3 Vd3 The CHA7115 is a monolithic three-stage GaAs high power amplifier designed for X-band applications. The HPA provides typically 8W output power associated to 36% power added efficiency at


    Original     		CHA7115 CHA7115 39dBm DSCHA71150082 X-band amplifier x-band power transistor x-Band High Power Amplifier PDF

    CHA5115-QDG

    Abstract: AN0017 MO-220 x-band power amplifier a3688 A5115
    Text: CHA5115-QDG RoHS COMPLIANT X-band Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA5115-QDG is a monolithic two-stage GaAs medium power amplifier designed for X-band applications. The MPA provides typically 28dBm output power associated to 30% power added


    Original     		CHA5115-QDG CHA5115-QDG 28dBm A5115 A3688A A3667A 8-12GHz 28dBm 190mA 24L-QFN4x4 AN0017 MO-220 x-band power amplifier a3688 A5115 PDF

    Untitled

    Abstract: No abstract text available
    Text: CHA5115-99F RoHS COMPLIANT X-band Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA5115-99F is a monolithic two-stage GaAs medium power amplifier designed for X-band applications. The MPA provides typically 28dBm output power associated to 37% power added


    Original     		CHA5115-99F CHA5115-99F 28dBm 8-12GHz 28dBm DSCHA51152152 PDF

    HIGH POWER SUITABLE x-BAND AMPLIFIER

    Abstract: A5115 AN0017 MO-220 x-Band High Power Amplifier x-band power amplifier
    Text: CHA5115-QDG RoHS COMPLIANT X-band Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA5115-QDG is a monolithic two-stage GaAs medium power amplifier designed for X-band applications. The MPA provides typically 28dBm output power associated to 30% power added


    Original     		CHA5115-QDG CHA5115-QDG 28dBm A5115 A3688A A3667A 8-12GHz 28dBm 190mA 24L-QFN4x4 HIGH POWER SUITABLE x-BAND AMPLIFIER A5115 AN0017 MO-220 x-Band High Power Amplifier x-band power amplifier PDF

    Untitled

    Abstract: No abstract text available
    Text: CHA5115-QDG RoHS COMPLIANT X-band Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA5115-QDG is a monolithic two-stage GaAs medium power amplifier designed for X-band applications. The MPA provides typically 28dBm output power associated to 30% power added


    Original     		CHA5115-QDG CHA5115-QDG 28dBm A5115 8-12GHz 28dBm 190mA 24L-QFN4x4 DSCHA5115-QDG1199 PDF

    cha7215

    Abstract: x-Band High Power Amplifier
    Text: CHA7215 RoHS COMPLIANT X-band High Power Amplifier GaAs Monolithic Microwave IC Description VG1R VD1 VG2R ● ● The CHA7215 is a monolithic three-stage GaAs high power amplifier designed for X band applications. The HPA provides typically 9W output power


    Original     		CHA7215 CHA7215 19dBm DSCHA72159287 x-Band High Power Amplifier PDF

    CHA8100

    Abstract: x-Band High Power Amplifier AN0020 CHA8100-99F 41dBm vcx8 mar105
    Text: CHA8100 RoHS COMPLIANT X-band HBT High Power Amplifier GaAs Monolithic Microwave IC TI Description Vc TO9 Vc Vctrl Vc TO8 The CHA8100 chip is a monolithic twostage high power amplifier designed for X band applications. The HPA provides typically 11W output power, 40% power


    Original     		CHA8100 CHA8100 DSCHA81000069 x-Band High Power Amplifier AN0020 CHA8100-99F 41dBm vcx8 mar105 PDF

    x-Band High Power Amplifier

    Abstract: x-band HPA 3 W CHA8100 CHA8100-99F TO9 thermal resistance
    Text: CHA8100 RoHS COMPLIANT X-band HBT High Power Amplifier GaAs Monolithic Microwave IC TI Description Vc TO9 Vc Vctrl Vc TO8 The CHA8100 chip is a monolithic twostage high power amplifier designed for X band applications. The HPA provides typically 11W output power, 40% power


    Original     		CHA8100 CHA8100 DSCHA81009083 x-Band High Power Amplifier x-band HPA 3 W CHA8100-99F TO9 thermal resistance PDF

    x-Band High Power Amplifier

    Abstract: CHA7215
    Text: CHA7215 X-band High Power Amplifier GaAs Monolithic Microwave IC Vg3 Description Vd3 Vd2 The CHA7215 is a monolithic three-stage GaAs high power amplifier designed for X band applications. The HPA provides typically 9W output power associated to 36% power added efficiency at


    Original     		CHA7215 CHA7215 19dBm DSCHA72159040 x-Band High Power Amplifier PDF

    CHA7115

    Abstract: x-Band High Power Amplifier 39dBm x-band power amplifier
    Text: CHA7115 RoHS COMPLIANT X-band High Power Amplifier GaAs Monolithic Microwave IC Description Vg3 Vd3 The CHA7115 is a monolithic three-stage GaAs high power amplifier designed for X-band applications. The HPA provides typically 8W output power associated to 36% power added efficiency at


    Original     		CHA7115 CHA7115 39dBm DSCHA71150082 x-Band High Power Amplifier 39dBm x-band power amplifier PDF

    Untitled

    Abstract: No abstract text available
    Text: CHA8100 RoHS COMPLIANT X-band HBT High Power Amplifier GaAs Monolithic Microwave IC TI Description Vc TO9 Vc Vctrl Vc TO8 The CHA8100 chip is a monolithic twostage high power amplifier designed for X band applications. The HPA provides typically 11W output power, 40% power


    Original     		CHA8100 CHA8100 DSCHA81000069 PDF

    cpi 400W

    Abstract: CPI twt tube 400 W VZX-6984A4 EN-60215 RF amplifier 400W amplifier 400W RF amplifier output 400W input 10 w am 5544
    Text: 400W Compact Medium Power Amplifier for Satellite Communications X-Band The VZX-6984A4 400 Watt TWT Medium Power Amplifier— high efficiency in a compact package. X-Band Provides 400 watts of power in a 3 rack unit package, digital ready, for wideband, single- and


    Original     		VZX-6984A4 CPR-112G cpi 400W CPI twt tube 400 W VZX-6984A4 EN-60215 RF amplifier 400W amplifier 400W RF amplifier output 400W input 10 w am 5544 PDF

    Untitled

    Abstract: No abstract text available
    Text: united monolithic semiconductors CHA7114 RoHS COMPLIANT X Band High Power Amplifier GaAs Monolithic Microwave IC Description The CHA7114 is a monolithic two-stage GaAs high power amplifier designed for X band applications. This device is manufactured using a UMS


    OCR Scan     		CHA7114 CHA7114 DSCHA7114-0197 PDF

    CHA7010

    Abstract: x-Band High Power Amplifier
    Text: CHA7010 RoHS COMPLIANT X-band GaInP HBT High Power Amplifier GaAs Monolithic Microwave IC Main Features Description The CHA7010 is a monolithic two-stage GaAs high power amplifier designed for X band applications. This device is manufactured using a GaInP


    Original     		CHA7010 CHA7010 DSCHA70104054 x-Band High Power Amplifier PDF

    x-Band High Power Amplifier

    Abstract: 10Ghz RF Power 10w amplifier CHA7010
    Text: CHA7010 RoHS COMPLIANT X-band GaInP HBT High Power Amplifier GaAs Monolithic Microwave IC Main Features Description The CHA7010 is a monolithic two-stage GaAs high power amplifier designed for X band applications. This device is manufactured using a GaInP


    Original     		CHA7010 CHA7010 DSCHA70104054 x-Band High Power Amplifier 10Ghz RF Power 10w amplifier PDF

    Untitled

    Abstract: No abstract text available
    Text: Solid State Pulsed Power Amplifier High Power, Broadband, X Band Solid State RF Amplifier Aethercomm P/N SSPA 8.6-9.5-15 is a high power X • Operation from 8.6 to 9.5 GHz Minimum band solid state pulsed power amplifier that operates • Pulsed RF and Pulsed DC Operation


    Original     		PDF

    RF Power Amplifier 125KHz

    Abstract: RFHA5966AX 4500m 1n4148 die GAAS FET AMPLIFIER x-band 10w RFHA5966A x-Band Hemt Amplifier 95GHZ 10Ghz RF Power 10w amplifier "15 GHz" power amplifier 41dBm
    Text: RFHA5966A RFHA5966AX Band 10W High Power Amplifier GaAs MMIC X BAND 10W HIGH POWER AMPLIFIER GaAs MMIC Die Size: 4500m x 4000m VD1 VD2 Features      20dB Gain +41dBm Saturated Output Power 40% Power Added Efficiency 100% On Wafer DC and RF


    Original     		RFHA5966AX RFHA5966A 4500m 4000m 41dBm RFHA5966A 1N4148, RF Power Amplifier 125KHz 1n4148 die GAAS FET AMPLIFIER x-band 10w x-Band Hemt Amplifier 95GHZ 10Ghz RF Power 10w amplifier "15 GHz" power amplifier 41dBm PDF

    Untitled

    Abstract: No abstract text available
    Text: EMM5079X X / Ku-Band Power Amplifier MMIC FEATURES •Output Power; P1dB = 25 dBm Typ. •High Gain; GL = 23.5 dB(Typ.) •Wide Frequency Band ; 10.0 – 15.4 GHz •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The EMM5079X is a wide band power amplifier MMIC that


    Original     		EMM5079X EMM5079X 1906B, PDF

    EMM5079

    Abstract: EMM5079X
    Text: EMM5079X X / Ku-Band Power Amplifier MMIC FEATURES •Output Power; P1dB = 25 dBm Typ. •High Gain; GL = 23.5 dB(Typ.) •Wide Frequency Band ; 10.0 – 15.4 GHz •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The EMM5079X is a wide band power amplifier MMIC that


    Original     		EMM5079X EMM5079X 12nce 1906B, EMM5079 PDF

    MMIC X-band amplifier

    Abstract: No abstract text available
    Text: RFHA5966A RFHA5966AX Band 10W High Power Amplifier GaAs MMIC X BAND 10W HIGH POWER AMPLIFIER GaAs MMIC Die Size: 4500m x 4000m VD1 VD2 Features      20dB Gain +41dBm Saturated Output Power 40% Power Added Efficiency 100% On Wafer DC and RF


    Original     		RFHA5966A RFHA5966AX 41dBm RFHA5966A Radar023 1N4148, DS111023 MMIC X-band amplifier PDF

    Untitled

    Abstract: No abstract text available
    Text: CHA7215 RoHS COMPLIANT X-band High Power Amplifier GaAs Monolithic Microwave IC Description VG1R VD1 VG2R 1 1 The CHA7215 is a monolithic three-stage GaAs high power amplifier designed for X band applications. The HPA provides typically 9W output power associated to 35% power added efficiency at


    Original     		CHA7215 CHA7215 19dBm DSCHA72159287 PDF