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    X-BAND POWER TR Search Results

    X-BAND POWER TR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    X-BAND POWER TR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: X-BAND CAPACITORS MORE RF POWER MORE BANDWIDTH MORE CAPACITANCE Catalog 8100 X-BAND CAPACITORS PRESIDIO ADVANTAGE KEY FEATURES ✦ ✦ ✦ ✦ ✦ 3 Watts power handling at 8 GHz Transmission loss S21 about -0.2 dB up to X-Band 18 pF standard in 0402 footprint


    Original     		PDF MXB0402P180K3T1Câ

    Untitled

    Abstract: No abstract text available
    Text: X-BAND CAPACITORS MORE POWER MORE BANDWIDTH MORE CAPACITANCE Catalog 8100 X-BAND CAPACITORS PRESIDIO ADVANTAGE KEY FEATURES ✦ ✦ ✦ ✦ ✦ 3 Watts power handling at 8 GHz Transmission loss S21 about -0.2 dB up to X-Band 18 pF standard in 0402 footprint


    Original     		PDF MXB0402P180K3T1Câ

    CPI Helix tube

    Abstract: WRD-650 90 KW blower VTX6389L3 MIMIC control panel MKT-202
    Text: CPI 1.0kW X-Band TWT Amplifier for Instrumentation Applications X- Band The VZX-2783C1 x-Band 1.0 kW TWT High Power Amplifier features high efficiency and power for EMC/EMI testing. Safety Provides 1000 watts of power in the 8.0 to 12.75 GHz frequency band in a compact 19inch rack-mount dual drawer configuration for


    Original     		PDF VZX-2783C1 19inch MKT-202, CPI Helix tube WRD-650 90 KW blower VTX6389L3 MIMIC control panel MKT-202

    Untitled

    Abstract: No abstract text available
    Text: X-BAND CAPACITORS MORE RF POWER MORE BANDWIDTH MORE CAPACITANCE Catalog 8100 X-BAND CAPACITORS PRESIDIO ADVANTAGE KEY FEATURES ✦ ✦ ✦ ✦ Transmission loss S21 about -0.2 dB up to X-Band 18 pF standard in 0402 footprint 33 pF standard in 0603 footprint


    Original     		PDF MXB0402P180K3T1Câ

    Untitled

    Abstract: No abstract text available
    Text: X-BAND CAPACITORS MORE RF POWER MORE BANDWIDTH MORE CAPACITANCE Catalog 8100 X-BAND CAPACITORS PRESIDIO ADVANTAGE KEY FEATURES ✦ ✦ ✦ ✦ Transmission loss S21 about -0.2 dB up to X-Band 18 pF standard in 0402 footprint 33 pF standard in 0603 footprint


    Original     		PDF MXB0402P180K3T1Câ

    AM7808CLT

    Abstract: No abstract text available
    Text: AM7808 AM7808HighEfficiency Quad-Band Tx Dual-Band Rx GSM/GPRS CMOS Tx Module High-Efficiency Quad-Band Tx Dual-Band Rx GSM/GPRS CMOS Tx Module Package: LGA, 5.25mm x 5.30mm x 0.80mm RX1 TM AdaptiveRF HB_IN Features  ANT Extended Power Added Efficiency


    Original     		PDF AM7808 AM7808HighEfficiency EGSM850 EGSM900 DCS1800 PCS1900 DS121106 AM7808-CLZ AM7808-CLS AM7808CLT

    CHA5115-QDG

    Abstract: AN0017 MO-220 x-band power amplifier a3688 A5115
    Text: CHA5115-QDG RoHS COMPLIANT X-band Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA5115-QDG is a monolithic two-stage GaAs medium power amplifier designed for X-band applications. The MPA provides typically 28dBm output power associated to 30% power added


    Original     		PDF CHA5115-QDG CHA5115-QDG 28dBm A5115 A3688A A3667A 8-12GHz 28dBm 190mA 24L-QFN4x4 AN0017 MO-220 x-band power amplifier a3688 A5115

    amplifier 400W

    Abstract: 400w amplifier miteq twt
    Text: MT3400H ANTENNA MOUNT TRAVELING WAVE TUBE MEDIUM POWER AMPLIFIER C-BAND: X-BAND: Ku-BAND: DBS-BAND: 400W 400W 400W 270W MT3400H FEATURES: Operational Temperature of 60°C Weather Resistant Antenna Mount TWT Amplifier Typical Phase Noise 10 dB Below IESS-308


    Original     		PDF MT3400H MT3400H IESS-308 MIL-STD-810E, amplifier 400W 400w amplifier miteq twt

    HIGH POWER SUITABLE x-BAND AMPLIFIER

    Abstract: A5115 AN0017 MO-220 x-Band High Power Amplifier x-band power amplifier
    Text: CHA5115-QDG RoHS COMPLIANT X-band Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA5115-QDG is a monolithic two-stage GaAs medium power amplifier designed for X-band applications. The MPA provides typically 28dBm output power associated to 30% power added


    Original     		PDF CHA5115-QDG CHA5115-QDG 28dBm A5115 A3688A A3667A 8-12GHz 28dBm 190mA 24L-QFN4x4 HIGH POWER SUITABLE x-BAND AMPLIFIER A5115 AN0017 MO-220 x-Band High Power Amplifier x-band power amplifier

    Untitled

    Abstract: No abstract text available
    Text: CHA5115-QDG RoHS COMPLIANT X-band Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA5115-QDG is a monolithic two-stage GaAs medium power amplifier designed for X-band applications. The MPA provides typically 28dBm output power associated to 30% power added


    Original     		PDF CHA5115-QDG CHA5115-QDG 28dBm A5115 8-12GHz 28dBm 190mA 24L-QFN4x4 DSCHA5115-QDG1199

    SF1222D

    Abstract: SF1222
    Text: Preliminary SF1222D • Surface Mount 3.8 x 3.8 x 1.4 mm Package • Complies with Directive 2002/95/EC RoHS Pb Absolute Maximum Ratings Rating Value Units Input Power Level, Antenna in TX Band and TX in TX Band 25 dBm Input Power Level, RX in RX Band 20


    Original     		PDF SF1222D 2002/95/EC SF1222D SF1222

    X-band radar module

    Abstract: MAAP-009748-000000
    Text: MAAP-009748-000000 X-Band 17W Pulsed Power Amplifier Module 8.5 - 11.0 GHz 2010 Data Sheet v1 The most important thing we build is trust Features Description • Nominal 17W Peak Output Power The Cobham Sensor Systems X-Band 17W Module is a class A biased GaAs


    Original     		PDF MAAP-009748-000000 X-band radar module MAAP-009748-000000

    500W TRANSISTOR

    Abstract: hvvi
    Text: HVV1011-500L Product Overview L-Band High Power Pulsed Transistor 32us on/18us off x 48, LTDC 6.4% For L-band Radar Applications DESCRIPTION PACKAGE The high power HVV1011-500L device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed applications operating


    Original     		PDF HVV1011-500L on/18us HVV1011-500L EG-01-PO17X1 500W TRANSISTOR hvvi

    AETHERCOMM

    Abstract: Acros
    Text: Solid State Power Amplifier High Power X Band Solid State RF Amplifier Aethercomm P/N SSPA 7.1-7.3-10 is a High Power X • 5 watts linear or pulsed RF power min Band SSPA used in the DSCC Exciter-Transmitter • Operation from 7.1 to 7.3 GHz Subsystem. It is used as a TWT driver amplifier. It


    Original     		PDF

    CHA7010

    Abstract: x-Band High Power Amplifier
    Text: CHA7010 RoHS COMPLIANT X-band GaInP HBT High Power Amplifier GaAs Monolithic Microwave IC Main Features Description The CHA7010 is a monolithic two-stage GaAs high power amplifier designed for X band applications. This device is manufactured using a GaInP


    Original     		PDF CHA7010 CHA7010 DSCHA70104054 x-Band High Power Amplifier

    x-Band High Power Amplifier

    Abstract: 10Ghz RF Power 10w amplifier CHA7010
    Text: CHA7010 RoHS COMPLIANT X-band GaInP HBT High Power Amplifier GaAs Monolithic Microwave IC Main Features Description The CHA7010 is a monolithic two-stage GaAs high power amplifier designed for X band applications. This device is manufactured using a GaInP


    Original     		PDF CHA7010 CHA7010 DSCHA70104054 x-Band High Power Amplifier 10Ghz RF Power 10w amplifier

    RF Power Amplifier 125KHz

    Abstract: RFHA5966AX 4500m 1n4148 die GAAS FET AMPLIFIER x-band 10w RFHA5966A x-Band Hemt Amplifier 95GHZ 10Ghz RF Power 10w amplifier "15 GHz" power amplifier 41dBm
    Text: RFHA5966A RFHA5966AX Band 10W High Power Amplifier GaAs MMIC X BAND 10W HIGH POWER AMPLIFIER GaAs MMIC Die Size: 4500m x 4000m VD1 VD2 Features      20dB Gain +41dBm Saturated Output Power 40% Power Added Efficiency 100% On Wafer DC and RF


    Original     		PDF RFHA5966AX RFHA5966A 4500m 4000m 41dBm RFHA5966A 1N4148, RF Power Amplifier 125KHz 1n4148 die GAAS FET AMPLIFIER x-band 10w x-Band Hemt Amplifier 95GHZ 10Ghz RF Power 10w amplifier "15 GHz" power amplifier 41dBm

    Untitled

    Abstract: No abstract text available
    Text: EMM5079X X / Ku-Band Power Amplifier MMIC FEATURES •Output Power; P1dB = 25 dBm Typ. •High Gain; GL = 23.5 dB(Typ.) •Wide Frequency Band ; 10.0 – 15.4 GHz •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The EMM5079X is a wide band power amplifier MMIC that


    Original     		PDF EMM5079X EMM5079X 1906B,

    EMM5079

    Abstract: EMM5079X
    Text: EMM5079X X / Ku-Band Power Amplifier MMIC FEATURES •Output Power; P1dB = 25 dBm Typ. •High Gain; GL = 23.5 dB(Typ.) •Wide Frequency Band ; 10.0 – 15.4 GHz •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The EMM5079X is a wide band power amplifier MMIC that


    Original     		PDF EMM5079X EMM5079X 12nce 1906B, EMM5079

    MMIC X-band amplifier

    Abstract: No abstract text available
    Text: RFHA5966A RFHA5966AX Band 10W High Power Amplifier GaAs MMIC X BAND 10W HIGH POWER AMPLIFIER GaAs MMIC Die Size: 4500m x 4000m VD1 VD2 Features      20dB Gain +41dBm Saturated Output Power 40% Power Added Efficiency 100% On Wafer DC and RF


    Original     		PDF RFHA5966A RFHA5966AX 41dBm RFHA5966A Radar023 1N4148, DS111023 MMIC X-band amplifier

    RF1136

    Abstract: RF113 RF327
    Text: RF1136 BROADBAND LOW POWER SP3T SWITCH Package Style: QFN, 12-Pin, 2.5 mm x 2.5 mm x 0.6 mm Features „ „ „ „ „ „ Low Frequency - 3.5 GHz Operations Very Low Insertion Loss: Cell Band 0.25 dB PCS Band 0.30 dB High Isolation: Cell Band 28 dB PCS Band 22 dB


    Original     		PDF RF1136 12-Pin, RF1136 DS090630 RF113 RF327

    Untitled

    Abstract: No abstract text available
    Text: RF1136 BROADBAND LOW POWER SP3T SWITCH Package Style: QFN, 12-Pin, 2.5 mm x 2.5 mm x 0.6 mm Features       Low Frequency - 3.5 GHz Operations Very Low Insertion Loss: Cell Band 0.25 dB PCS Band 0.30 dB High Isolation: Cell Band 28 dB PCS Band 22 dB


    Original     		PDF RF1136 12-Pin, RF1136 DS090630

    MIL-STD-188-164A

    Abstract: MIL-STD-188-164 IESS-308 CPI 750 watt twt tube solar panels at satellites CPI 750 twt tube
    Text: 750W Outdoor TWT Medium Power Amplifier for Satellite Communications X- Band The VZX-6987V7 X-Band 750 Watt TWT Medium Power Amplifier — high efficiency in an environmentally sealed compact package designed for outdoor operation Easy to Maintain Provides 750 watts of power in a rugged and


    Original     		PDF VZX-6987V7 IESS-308/309 MIL-STD-188-164A MIL-STD-188-164A MIL-STD-188-164 IESS-308 CPI 750 watt twt tube solar panels at satellites CPI 750 twt tube

    if mixer

    Abstract: No abstract text available
    Text: CONVERTER ASSEMBLIES S-BAND TO X-, Ku-BAND UPCONVERTER MODULE r SPECIFICATIONS IF input frequency 2 -4 GHz L0 input frequency 10 .12 and 14 GHz RF output frequency IF mixer "1 absorptive switch X-bard I O selector S-band IF input power divide^ X-band, Ku-band


    OCR Scan     		PDF 10-to-IF 55GHz if mixer