2sc2904 TRANSISTOR
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC2904 NPN E P IT A X IA L PLAN AR T Y P E D IS C R E T IO N 2SC2904 is a silicon NPN epitaxial planar type transistor specifically designed for high power amplifiers in HF band. O U T L IN E D R A W IN G D im ensions in mm
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2SC2904
2SC2904
30MHz
2sc2904 TRANSISTOR
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2sc2904 TRANSISTOR
Abstract: 2SC2904 hf amplifier 100w T-40
Text: MITSUBISHI RF POWER TRANSISTOR 2SC2904 NPN EP ITA X IA L PLANAR T Y P E DISCRETIO N OUTLINE DRAWING 2 S C 2 9 0 4 is a silicon N P N epitaxial planar type transistor Dimensions in mm sp e cific a lly designed fo r high pow er a m plifiers in H F band. R1 FEATURES
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2SC2904
2SC2904
2sc2904 TRANSISTOR
hf amplifier 100w
T-40
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Sanyo STK 1080
Abstract: TRANSISTOR a45 stk 1080
Text: Ordering number : EN 4897 Thick Film Hybrid 1C STK401 -130 AF Power Amplifier Split Power Supply (100W + 100W min, THD = 0.4%) Overview Package Dimensions A major feature of Sanyo thick-film power amplifier ICs unit: mm is that all ICs within a given product series are pin
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STK401
40dI3
STK401-130
Sanyo STK 1080
TRANSISTOR a45
stk 1080
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D2694
Abstract: STK401-130
Text: Ordering number:ENN4897 Thick Film Hybrid IC STK401-130 2ch AF Power Amplifier Split Power Supply (100W + 100W min, THD = 0.4%) Overview Package Dimensions A major feature of Sanyo thick-film power amplifier ICs is that all ICs within a given product series are pin compatible. This allows users to construct a product line of amplifiers with differing power output capacities using the same
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ENN4897
STK401-130
D2694
STK401-130
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STK401-130
Abstract: power amplifier 100w diagram sanyo electrolytic capacitors
Text: Ordering number:ENN4897 Thick Film Hybrid IC STK401-130 2ch AF Power Amplifier Split Power Supply (100W + 100W min, THD = 0.4%) Overview Package Dimensions A major feature of Sanyo thick-film power amplifier ICs is that all ICs within a given product series are pin compatible. This allows users to construct a product line of amplifiers with differing power output capacities using the same
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ENN4897
STK401-130
STK401-130
power amplifier 100w diagram
sanyo electrolytic capacitors
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TPV8100B
Abstract: No abstract text available
Text: MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA TPV8100B Advance Information The RF Line UHF Linear Power Transistor 100W — 470 to 860 MHz UHF LINEAR POWER TRANSISTOR . . d e sign e d for output sta ge s in Band IV & V T V transmitter am plifiers. Internal m atch
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TPV8100B
TPV8100B
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hp778d
Abstract: pm5171 RESISTOR CR25 RESISTOR CR25 philips MGP990 2222-809-05002 2222-121 philips capacitor cross reference PR52 BZY 56
Text: APPLICATION NOTE A wide-band class-A linear power amplifier 174 − 230 MHz with two transistors BLV33 ECO7904 Philips Semiconductors A wide-band class-A linear power amplifier (174 − 230 MHz) with two transistors BLV33 CONTENTS 1 ABSTRACT 2 INTRODUCTION
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BLV33
ECO7904
SCA57
hp778d
pm5171
RESISTOR CR25
RESISTOR CR25 philips
MGP990
2222-809-05002
2222-121
philips capacitor cross reference
PR52
BZY 56
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RESISTOR CR25 philips
Abstract: philips resistor CR25 hp778d pm5171 BZY 56 cr25 philips RESISTOR CR25 BLV33F 2222-809-05002 tv schematic diagram PHILIPS
Text: APPLICATION NOTE A wide-band class-A linear power amplifier 174 − 230 MHz with 2 transistors BLV33F ECO8005 Philips Semiconductors A wide-band class-A linear power amplifier (174 − 230 MHz) with 2 transistors BLV33F CONTENTS 1 ABSTRACT 2 INTRODUCTION
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BLV33F
ECO8005
SCA57
RESISTOR CR25 philips
philips resistor CR25
hp778d
pm5171
BZY 56
cr25 philips
RESISTOR CR25
BLV33F
2222-809-05002
tv schematic diagram PHILIPS
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Pallet VHF Power Amplifier
Abstract: BLF578 BLF578 fm band Pallet VHF Power Amplifier TELEVISION blf574 BLF571 BLA6H1214-500 1200w power amplifier LDMOS DVB-T transistors power combiner 4 watt VHF
Text: RF Power Presentation Broadcast ISM , Microwave and Cellular Richard Marlow: European Regional Marketing February 2009 Microwave, Broadcast & ISM Markets Broadcast (TV and radio transmission) – – – – – NXP has a long history (as Philips) and excellent reputation in the market
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BLF87x/88x)
BLF57x)
IS-95
BLF6G38S-25
OT608B
BLF6G38-25
OT608A
BLF6G38-10
Pallet VHF Power Amplifier
BLF578
BLF578 fm band
Pallet VHF Power Amplifier TELEVISION
blf574
BLF571
BLA6H1214-500
1200w power amplifier
LDMOS DVB-T transistors
power combiner 4 watt VHF
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trw RF POWER TRANSISTOR
Abstract: trw rf transistor trw transistors LT 9228 trw 131* RF POWER TRANSISTOR trw rf semiconductors 2023-12 TRW 52604 TP 9382 trw hybrid
Text: TR W RF SEMICONDUCTORS CATALOG 1981 EUROPEAN EDITION TABLE OF CONTENTS Pages • • • • INTRODUCTION. Q U A LITY .
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STK401-140
Abstract: STK401-000
Text: Ordering number:ENN4898 Thick Film Hybrid IC STK401-140 2ch AF Power Amplifier Split Power Supply (120W + 120W min, THD = 0.4%) Overview Package Dimensions A major feature of Sanyo thick-film power amplifier ICs is that all ICs within a given product series are pin compatible. This allows users to construct a product line of amplifiers with differing power output capacities using the same
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ENN4898
STK401-140
STK401-140
STK401-000
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sanyo wx series
Abstract: STK401-130 SANYO wx capacitor mg-250 STK400-010 STK401-010 sanyo wx
Text: Ordering num ber: EN4897 Thick Film Hybrid 1C STK401-130 Two-Channel AF Power Amplifier + power supply 100 W + 100 W Minimum, THD = 0.4% No. 4897 SA\YO i Overview Package Dimensions A major feature of Sanyo thick-film power amplifier ICs is that all ICs within a given product series are pin
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EN4897
sanyo wx series
STK401-130
SANYO wx capacitor
mg-250
STK400-010
STK401-010
sanyo wx
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stk401-140
Abstract: No abstract text available
Text: Ordering number:ENN4898 Thick Film Hybrid IC STK401-140 2ch AF Power Amplifier Split Power Supply (120W + 120W min, THD = 0.4%) Overview Package Dimensions A major feature of Sanyo thick-film power amplifier ICs is that all ICs within a given product series are pin compatible. This allows users to construct a product line of amplifiers with differing power output capacities using the same
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ENN4898
STK401-140
stk401-140
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MG1007-42
Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
Text: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are
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MS4-009-13
MG1007-42
MG1020-M16
MSC1075M
1004mp
MG1052-30
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b 1367 rf transistor
Abstract: 28V1001
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor The TPV8100B is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold metalliza tions and offers a high degree of reliability and ruggedness.
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TPV8100B
TPV8100B
b 1367 rf transistor
28V1001
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2sc2904 TRANSISTOR
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC2904 NPN EPITAXIAL PLANAR T Y P E DISCRETION OUTLINE DRAWING 2SC2904 is a silicon NPN epitaxial planar type transistor specifically designed for high power amplifiers in HF band. Dim ensions in mm R1 FEATURES • High gain: Gpe ^ 1 1 -5dB
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2SC2904
2SC2904
2sc2904 TRANSISTOR
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200w subwoofer circuit
Abstract: transistor subwoofer circuit diagram manual de transistores 200w subwoofer circuit pcb 2.1 subwoofer diagram 100w amp pcb 200W audio amplifier AMPLIFICADOR DE POTENCIA TRANSISTOR BC547 200w power amplifier PCB velleman K8060 200w subwoofer preamp diagram
Text: Total solder points: 74 Difficulty level: beginner 1 ¸ 2 ¸ 3 ¸ 4 ¸ 5 Z advanced 200W DISCRETE POWER AMPLIFIER K8060 or r system tre e k a e p s me thea r active Ideal fo guitar amp, ho , etc. fer, amp subwoo s, instrument m syste ILLUSTRATED ASSEMBLY MANUAL
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K8060
H8060IP-1
H8060B
200w subwoofer circuit
transistor subwoofer circuit diagram
manual de transistores
200w subwoofer circuit pcb
2.1 subwoofer diagram 100w amp
pcb 200W audio amplifier
AMPLIFICADOR DE POTENCIA
TRANSISTOR BC547
200w power amplifier PCB velleman K8060
200w subwoofer preamp diagram
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UHF TRANSISTOR
Abstract: SG9101AC transistor Common collector configuration npn 28v 100w amplifier
Text: GAE GREAT AMERICAN ELECTROINCS SG9101AC Silicon NPN high power UHF transistor SG9101 AC Transistor Assembly is designed for Class C common base push-pull wide band output amplifier applications in the 350-700 Mhz frequency range. Output Power: Frequency Range:
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SG9101AC
SG9101
FO-57C
700MhzA/cc
000004b
UHF TRANSISTOR
SG9101AC
transistor Common collector configuration
npn 28v 100w amplifier
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silico n RF Pow er Transistor The TPV8100B is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold metalliza tions and offers a high degree of reliability and ruggedness.
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TPV8100B
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IC 2832
Abstract: TV power transistor
Text: ERICSSON ^ PTB 20081 150 Watts, 470-860 MHz UHF TV Power Transistor Description Key Features The 20081 is a class AB, NPN, common emitter RF Power Transistor intended for 28-32 VDC operation across the 470860 UHF TV Power MHz frequency band. It is rated at 100
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100mA
32Vdc,
IC 2832
TV power transistor
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR DD l T b T ? 7bS 2SC3908 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC3908 is a silicon NPN epitaxial planar type transistor designed for HF power amplifiers applications. Dimensions in mm FEATURES • High power gain: Gpe ^ 11.5dB
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2SC3908
2SC3908
30MHz,
30MHz.
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2SC2609
Abstract: 2Sc260 transistor z ss
Text: MITSUBISHI RF POWER TRANSISTOR 2SC2609 NPN EPITAXIAL PLANAR TY PE DESCRIPTION OUTLINE DRAWING M itsubishi 2SC 2609 is a silicon N PN epitaxial planar type transistor specifically deisgned for V H F power am plifier applications. Dim ensions in mm R1 FEATURES
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2SC2609
2SC2609
G01fc
2Sc260
transistor z ss
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MHW721A2
Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA
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1PHX11136Q-14
MHW721A2
13001 S 6D TRANSISTOR
atv5030* motorola
2N5591 MOTOROLA
13001 6D TRANSISTOR
BGY41
MHW710-1
construction linear amplifier 2sc1945
7119 amperex
bf503
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2SC3908
Abstract: op 30MHZ PORCELAIN dust cap LC 7w RF POWER TRANSISTOR NPN 3 w RF POWER TRANSISTOR NPN
Text: MITSUBISHI RF POWER TRANSISTOR 2SC3908 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC 3908 is a silicon NPN epitaxial planar typ e transistor Dim ensions in m m designed fo r H F pow er am p lifie rs applications. R1 FEATURES • High pow er gain: G pe ^ 1 1 .5dB
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2SC3908
2SC3908
T-40E
op 30MHZ
PORCELAIN
dust cap LC
7w RF POWER TRANSISTOR NPN
3 w RF POWER TRANSISTOR NPN
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