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    Analog Devices Inc AD-MAX32SXWISE-SL

    LORA KITS BASED ON MAX32670 AND
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    DigiKey AD-MAX32SXWISE-SL Box 4 1
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    Mouser Electronics AD-MAX32SXWISE-SL
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    Newark AD-MAX32SXWISE-SL Bulk 1
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    Lantronix Inc 83X-32SA-L1Y1

    ONE-YEAR SUBSCRIPTION FOR TECHNI
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    DigiKey 83X-32SA-L1Y1 Bulk 1
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    Lantronix Inc 83X-32SA-L2Y1

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    DigiKey 83X-32SA-L2Y1 Bulk 1
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    Lantronix Inc 83X-32S-111-NAA

    83X-32S-111-NAA
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    DigiKey 83X-32S-111-NAA Bulk 1
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    Mouser Electronics 83X-32S-111-NAA
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    Lantronix Inc 83X-X32S-224-YAA

    83X-X32S-224-YAA
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    DigiKey 83X-X32S-224-YAA Bulk 1
    • 1 $11700
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    Mouser Electronics 83X-X32S-224-YAA
    • 1 $11700
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    Find more X32S price and stock on Findchips.com

    X32S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PF38F4050L0ZTQ0

    Abstract: PF38F3040 numonyx 106 ball RD38F4455 PF48F4400L0 RD38F40 PF38F4050 numonyx 107-ball Numonyx StrataFlash M18
    Text: Numonyx StrataFlash Wireless Memory L18/L30 SCSP 768-Mbit LQ Family with Asynchronous PSRAM/SRAM Datasheet Product Features „ „ „ „ „ „ Device Architecture — Flash die density: 128-, 256-Mbit — Async PSRAM density: 16-, 32-, 64-Mbit — Async SRAM density: 8-Mbit


    Original     		PDF L18/L30 768-Mbit 256-Mbit 64-Mbit 16-Mbit PF38F4050L0ZTQ0 PF38F3040 numonyx 106 ball RD38F4455 PF48F4400L0 RD38F40 PF38F4050 numonyx 107-ball Numonyx StrataFlash M18

    Untitled

    Abstract: No abstract text available
    Text: Numonyx StrataFlash Cellular Memory M18-90nm/65nm Datasheet Product Features „ „ „ High-Performance Read, Program and Erase — 96 ns initial read access — 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output — 133 MHz with zero wait-state synchronous


    Original     		PDF M18-90nm/65nm) 512-Mbit 16-bit

    Stacked 4MB NOR FLASH & SRAM with AD multiplexed

    Abstract: FLASH MEMORY 38F FLASH MEMORY 48F Numonyx admux 48F4400 numonyx 106 ball
    Text: Numonyx Wireless Flash Memory W18 with AD Multiplexed IO Datasheet Product Features „ „ „ High Performance Read-While-Write/Erase — Burst frequency at 66 MHz — 60 ns Initial Access Read Speed — 11 ns Burst-Mode Read Speed — 20 ns Page-Mode Read Speed


    Original     		PDF x32SH x16SB x16/x32 Stacked 4MB NOR FLASH & SRAM with AD multiplexed FLASH MEMORY 38F FLASH MEMORY 48F Numonyx admux 48F4400 numonyx 106 ball

    K4R761869A-GCT9

    Abstract: K4R761869A K4R761869A-FCM8 K4R761869A-FCT9 K4R761869A-GCM8 K4R761869A-GCN1
    Text: Direct RDRAM K4R761869A 576Mbit RDRAM A-die 1M x 18bit x 32s banks Direct RDRAMTM Version 1.41 January 2004 Page -1 Version 1.41 Jan. 2004 Direct RDRAM™ K4R761869A Change History Version 1.4( Sept. 2003) - First Copy ( Version 1.4 is named to unify the version of component and device operation datasheets)


    Original     		PDF K4R761869A 576Mbit 18bit 256/288Mb K4R761869A-GCT9 K4R761869A K4R761869A-FCM8 K4R761869A-FCT9 K4R761869A-GCM8 K4R761869A-GCN1

    8 channel RF transmitter and Receiver circuit for RC airplane

    Abstract: BA rx transistor T45 to DB9 DL0054 toshiba rdram
    Text: TC59RM716 8 MB/RB-8,-7,-6 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Overview The Direct Rambus DRAMTM (Direct RDRAMTM) is a general-purpose high performance memory device suitable for use in a broad range of applications including computer memory, graphics, video and any other applications


    Original     		PDF TC59RM716 128/144-Mbit 600-MHz 800-MHz TEST77 TEST78 8 channel RF transmitter and Receiver circuit for RC airplane BA rx transistor T45 to DB9 DL0054 toshiba rdram

    RDRAM Clock

    Abstract: No abstract text available
    Text: TC59RM816MB-8,-7,-6 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Overview The Direct Rambus DRAMTM Direct RDRAMTM is a general-purpose high performance memory device suitable for use in a broad range of applications including computer memory, graphics, video and any other applications


    Original     		PDF TC59RM816MB-8 256-Mbit 600-MHz 800-MHz TEST77 TEST78 RDRAM Clock

    Numonyx admux

    Abstract: PF38F2030W0YTQE numonyx 106 ball PSRAM TBA 931 PF38F2030 4400p0 x16C NOR Flash AAD die000000h
    Text: Numonyx Wireless Flash Memory W18 SCSP 128-Mbit W18 Family with Synchronous PSRAM Datasheet Product Features „ „ „ „ Device Architecture — Flash Die Density: 32, 64 or 128-Mbit — PSRAM Die Density: 16 or 32-Mbit — x16 Non-Mux or ADMux I/O Interface Option


    Original     		PDF 128-Mbit 128-Mbit 32-Mbit x32SH x16SB x16/x32 Numonyx admux PF38F2030W0YTQE numonyx 106 ball PSRAM TBA 931 PF38F2030 4400p0 x16C NOR Flash AAD die000000h

    FLASH MEMORY 38F

    Abstract: 128M NAND Flash Memory 8857H 28F128W30 28F320W30 28F640W30 48F4400 numonyx 106 ball Numonyx Embedded Flash Memory strataflash 512mbit
    Text: Numonyx Wireless Flash Memory W30 28F640W30, 28F320W30, 28F128W30 Datasheet Product Features „ „ „ „ High Performance Read-While-Write/Erase — Burst Frequency at 40 MHz — 70 ns Initial Access Speed — 25 ns Page-Mode Read Speed — 20 ns Burst-Mode Read Speed


    Original     		PDF 28F640W30, 28F320W30, 28F128W30 x32SH x16SB x16/x32 FLASH MEMORY 38F 128M NAND Flash Memory 8857H 28F128W30 28F320W30 28F640W30 48F4400 numonyx 106 ball Numonyx Embedded Flash Memory strataflash 512mbit

    PF48F3000

    Abstract: 28F128L18 28F256L18 RD48F4000L0YBQ0 RD48F4000L0YTQ0 64Gbit Numonyx StrataFlash M18
    Text: Numonyx StrataFlash Wireless Memory L18 28F128L18, 28F256L18 Datasheet Product Features „ „ High performance Read-While-Write/Erase — 85 ns initial access — 54 MHz with zero wait state, 14 ns clock-todata output synchronous-burst mode — 25 ns asynchronous-page mode


    Original     		PDF 28F128L18, 28F256L18 128-Mbit 16-Mbit 256-Mbit 16-Kword 64-Kword x32SH x16SB x16/x32 PF48F3000 28F128L18 28F256L18 RD48F4000L0YBQ0 RD48F4000L0YTQ0 64Gbit Numonyx StrataFlash M18

    PF38F4060M

    Abstract: PF38F4060 PF48F3000M0Y0QE PF48F6000 2N 8904 PF556 IC TOP 8901
    Text: Numonyx StrataFlash Cellular Memory M18-90nm/65nm Datasheet Product Features „ „ „ High-Performance Read, Program and Erase — 96 ns initial read access — 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output — 133 MHz with zero wait-state synchronous


    Original     		PDF M18-90nm/65nm) 512-Mbit 16-bit 256-Kbyte PF38F4060M PF38F4060 PF48F3000M0Y0QE PF48F6000 2N 8904 PF556 IC TOP 8901

    numonyx 106 ball

    Abstract: numonyx 107-ball Numonyx StrataFlash M18
    Text: Numonyx StrataFlash Wireless Memory L18 SCSP 768-Mbit L18 Family with Synchronous PSRAM Datasheet Product Features „ „ „ „ Device Architecture — Flash Die Density: 128 or 256-Mbit — PSRAM Die Density: 32 or 64-Mbit — x16 Non-Mux or ADMux I/O Interface Option


    Original     		PDF 768-Mbit 256-Mbit 64-Mbit 11x13 numonyx 106 ball numonyx 107-ball Numonyx StrataFlash M18

    WP1F

    Abstract: BA8D11 PF38F4060 PF38F4060M PF48F6000M0Y1 8S19 L18 65nm PF48F3000M0Y0QE x16C
    Text: Numonyx StrataFlash Cellular Memory M18-90nm/65nm Datasheet Product Features „ „ „ High-Performance Read, Program and Erase — 96 ns initial read access — 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output — 133 MHz with zero wait-state synchronous


    Original     		PDF M18-90nm/65nm) 512-Mbit 16-bit 256-Kbyte x32SH x16SB x16/x32 8x10x1 WP1F BA8D11 PF38F4060 PF38F4060M PF48F6000M0Y1 8S19 L18 65nm PF48F3000M0Y0QE x16C

    256-288 MBit Direct RDRAM

    Abstract: DL0054 da53 BA rx transistor BYt 32 TC59RM818MB-6 TC59RM818MB-7 TC59RM818MB-8 RDRAM SOP
    Text: TC59RM816 8 MB-8,-7,-6 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Overview The Direct Rambus DRAMTM (Direct RDRAMTM) is a general-purpose high performance memory device suitable for use in a broad range of applications including computer memory, graphics, video and any other applications


    Original     		PDF TC59RM816 256/288-Mbit 600-MHz 800-MHz TEST77 TEST77 TEST78 TEST78 256-288 MBit Direct RDRAM DL0054 da53 BA rx transistor BYt 32 TC59RM818MB-6 TC59RM818MB-7 TC59RM818MB-8 RDRAM SOP

    numonyx 106 ball

    Abstract: strataflash 512mbit strataflash 512 p33 512mbit numonyx 107-ball 512-Gbit Numonyx StrataFlash M18
    Text: Numonyx StrataFlash Wireless Memory L18/L30 SCSP 512-Mbit LX Family with LPSDRAM (x32) Datasheet Product Features „ „ „ Device Architecture — Flash die density: 128-, 256-Mbit — Top or Bottom flash parameter configuration — 32-bit bus width


    Original     		PDF L18/L30 512-Mbit 256-Mbit 32-bit 16-Mbit x32SH x16SB x16/x32 numonyx 106 ball strataflash 512mbit strataflash 512 p33 512mbit numonyx 107-ball 512-Gbit Numonyx StrataFlash M18

    TC59RM716GB

    Abstract: 9T20T
    Text: TOSHIBA TEN TA TIVE T O S H IB A M O S DIGITAL IN T E G R A T E D C IR C U IT TC59RM716GB-8 SILIC O N M O N O LIT H IC Overview T he D irect R am bus D R A M D irect R D R A M ™ is a general-purpose high perform ance m em ory device suitable for use in a broad ra n g e of applications including com puter memory, graphics, video a n d any o th er applications


    OCR Scan     		PDF TC59RM716GB-8 128-M 800-M TEST77 TEST78 P-BGA54-1312-1 TC59RM716GB 9T20T

    Untitled

    Abstract: No abstract text available
    Text: S E M I C O N D U C T O R Revised M arch 1999 TM 74LCX32 Low Voltage Quad 2-Input OR Gate with 5V Tolerant Inputs General Description Features The LCX32 contains fo u r 2-input O R gates. The inputs to l­ erate voltages up to 7V allowing the interface of 5 V sys­


    OCR Scan     		PDF 74LCX32 LCX32 74LCX32

    Untitled

    Abstract: No abstract text available
    Text: IM P O R T A N T N O TIC E All new designs should use XC3000A or XC3100A. Information on XC3000 and XC3100 is presented here as reference for existing designs. £ x il in x XC3000, XC3000A, XC3000L, XC3100, XC3100A Logic Cell Array Families Product Description


    OCR Scan     		PDF XC3000A XC3100A. XC3000 XC3100 XC3000, XC3000A, XC3000L, XC3100, XC3100A

    Untitled

    Abstract: No abstract text available
    Text: Revised March 1999 SEMICONDUCTOR TM 74LCX32 Low Voltage Quad 2-Input OR Gate with 5V Tolerant Inputs General Description Features The LCX32 contains fo u r 2-input O R gates. The inputs to l­ erate voltages up to 7V allowing the interface of 5 V sys­ tem s to 3V system s.


    OCR Scan     		PDF 74LCX32 LCX32

    w83 323

    Abstract: W83L517 R5C576
    Text: S c h e m a tic D ia g ra m s Appendix B:Schematic Diagrams Mainboard S h e et 1 o f 27 P A G E !-B L O C K D IAG R AM PAGE2 -C LO C K GENERATOR PAGE3 -C P U CK-TITAN CLOCK Generator PAGE7 -GM CK 133 MHz AGTL P SB LCD PANEL ATI VG A AGP 4X M o b i l i ty-P6


    OCR Scan     		PDF PC-133 w83 323 W83L517 R5C576

    Ultra-Fast-Recovery Rectifier Diodes

    Abstract: No abstract text available
    Text: ULTRA-FAST-RECOVERY RECTIFIER DIODES CENTER-TAP TYPE Elee. Char, at 25 'C Absolute Maxim um Ratings Type No. V rm lo Ifsm (V) (A) (A) with Fin FM G -12S.R 200 FM G -13S.R 300 5.0 F Max. I F (V) 35 ULTRA-FAST-RECOVERY RECTIFIER DIODES (BRIDGE TYPE) 1.8


    OCR Scan     		PDF L-23S L-34S X-22S X-22SL X-32S -402L -602L Ultra-Fast-Recovery Rectifier Diodes

    Untitled

    Abstract: No abstract text available
    Text: ISHUMôNINPÉaNÀWÀ / r é, ^ ± o ,/ & if im 6.73 +&1 • \ Y \ 0 .t S DO NOT SCALE DIMENSIONI IN DIMENSIONS IN mm M E T R IC PROIEZIONE EUROPEA (EUROPEAN PROJECTION) u . j' 4rf i o ,IS I NOTE (NOTES) ££F. A MATERIALI (MATERIALS): ” E ^ CO N TATTO : LEG A DI RAM E, NICHELATO E DORATO/STAGNATO


    OCR Scan     		PDF X-32S3

    toshiba tlc 711

    Abstract: RDRAM Clock T3D Toshiba
    Text: TO SH IB A T E N T A T IV E TC59RM716 8 MB/RB T O S H IB A M O S D IG IT A L IN T E G R A T E D C IR C U IT SILIC O N M O N O L IT H IC Overview The Direct R a m b u s T M DRAM (Direct RDRAMTM) is a general-purpose high performance memory device suitable for use in a broad range of applications including computer memory, graphics, video


    OCR Scan     		PDF TC59RM716 128/144-Mbit 600-MHz 800-MHz P-TFBGA62-1312-0 toshiba tlc 711 RDRAM Clock T3D Toshiba

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA T E N T A T IV E TC59RM716 8 MB/RB-8,-7,-6 T O S H IB A M O S D IG IT A L IN T E G R A T E D C IR C U IT S IL IC O N M O N O L IT H IC Overview The Direct Ram bus DRAM (Direct RDRAM™ ) is a general-purpose high performance memory device suitable


    OCR Scan     		PDF TC59RM716 128/144-Mbit 600-MHz 800-MHz a80AZ

    RADIO SHACK PARTS CROSS REF

    Abstract: CIO-AD08 metrabyte PIO-12 context plus fire alarm control panel DAS-16 NEC uPD PIO-96 DAs 08 CIO-AD16 acquisition PIO-12
    Text: -m s'' •» COMPATIBLE I/O SERIES a l l a b o a r d Complete T alker/Listner/Controller Uses industry standard NEC uPD 7210 D ata transfer rates over 300K bytes/sec H alf size board R F shielded IEEE-488 cable connector 6 Interrupt lines Transparent interrupt enabling/disabling


    OCR Scan     		PDF IEEE-488 C488-2M, RADIO SHACK PARTS CROSS REF CIO-AD08 metrabyte PIO-12 context plus fire alarm control panel DAS-16 NEC uPD PIO-96 DAs 08 CIO-AD16 acquisition PIO-12