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    tc183

    Abstract: E17G tc183G TC163G TC180G single port RAM TC183e Toshiba TC8570
    Text: TOSHIBA TC183G/ECMOS ASIC Family 3.0V/3.3V and 5.0V, 0.5nm1 TheTC183G/E eases the transition from 5V to 3V based systems. Benefits • Mixed 3.0/3,3V and 5V I/O 0.5 micron CMOS process with fast 230ps gate delay performance with the power savings of a 3V core


    OCR Scan     		PDF TC183G/ECMOS TheTC183G/E 230ps TC160G TC163G tc183 E17G tc183G TC180G single port RAM TC183e Toshiba TC8570

    TC160G33

    Abstract: TC160G11 TC160G22 TC160G16 TC160G70 TC140G TC160G
    Text: TOSHIBA T O S H I B A A M E R I C A E L E C T R O N IC C O M P O N E N T S , I N C . Preliminary TC160G and TC163G CMOS 0.8 micron Gate Arrays for Low Voltage Operation 3V/3.3V Description The T C 160G and T C 163G 0.8 m icro n ga te arra y series o p e ra te at 3 V ± 0 .3 V or 3 .3 V ± 0 .3 V low vo lta g e . T hey have


    OCR Scan     		PDF TC160G TC163G TCH72M7 TC160G33 TC160G11 TC160G22 TC160G16 TC160G70 TC140G

    TC180G21

    Abstract: single port ram TC180 TC180G TC160G AM 770 DENSITY TRANSMITTER Toshiba NAND 67 Bga tc8565 toshiba graphics tc183G
    Text: TOSHIBA TC180 Series CMOS ASIC Family 3.0V/3.3V, 0.5nm1 The TC180 series increases system performance and device integration while reducing power. Benefits • True 3.0/3,3V 0.5 micron CMOS process with fast 230ps gate delays • Reduced power consumption makes lower cost plastic packag­


    OCR Scan     		PDF TC180 230ps TC160G TC180G21 single port ram TC180G AM 770 DENSITY TRANSMITTER Toshiba NAND 67 Bga tc8565 toshiba graphics tc183G

    TC180G21

    Abstract: TC180G TC160G single port RAM TC180 0724 XBRL16 toshiba ASIC
    Text: TOSHIBA TC180 Series CMOS ASIC Family 3.0V/3.3V, 0.5nm1 The TC180 series increases system performance and device integration while reducing power. Benefits • True 3.0/3.3V 0.5 micron CMOS process with fast 230ps gate delays • Reduced power consumption makes lower cost plastic packag­


    OCR Scan     		PDF TC180 230ps TC160G TDR7247 TC180G21 TC180G single port RAM 0724 XBRL16 toshiba ASIC

    TC170G35

    Abstract: TC170G TAB 173 AP TC170G45 Edison time delay CMOS GATE ARRAYs toshiba XBRL16
    Text: TOSHIBA TC170G CMOS Gate Array 0.7\xm, 5.0V ASICs The 0.7 urn, 5VTC170G allows higher system perfor­ mance and device integration with lower power than previous generation 5V gate array families Benefits • Advanced 0.7 micron CMOS process with fast 260ps gate


    OCR Scan     		PDF TC170G 5VTC170G 260ps TC160G TC170G35 TAB 173 AP TC170G45 Edison time delay CMOS GATE ARRAYs toshiba XBRL16

    TOSHIBA GATE ARRAY

    Abstract: TC183e Rambus ASIC Cell tc183
    Text: TOSHIBA TC183G/E CMOS ASIC Family 3.0V/3.3V and 5.0V, 0.5nm1 TheTC183G/E eases the transition from 5V to 3V based systems. Benefits • Mixed 3.0/3.3V and 5V I/O 0.5 micron CMOS process with fast 230ps gate delay performance with the pow er savings of a 3V core


    OCR Scan     		PDF TC183G/E TheTC183G/E 230ps TC160G TC163G 0D2D747 TOSHIBA GATE ARRAY TC183e Rambus ASIC Cell tc183

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA ‘ arsai "<ÖS TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC. TC160G/160E CMOS Gate Array/Embedded Array 0.8 micron Description Features The TC160G and TC160E with embedded functions series of 0.8 micron gate arrays has a 300ps gate speed and up to 21 OK* usable gates. These members of the DSA family


    OCR Scan     		PDF TC160G/160E TC160G TC160E 300ps 300ps MAS-0152/3-92

    TC170G35

    Abstract: No abstract text available
    Text: TOSHIBA TC170G CMOS Gate Array 0.7fim, 5.0V ASICs The 0.7 |im, 5V TC170G allows higher system perfor­ mance and device integration with lower power than previous generation 5V gate array families Benefits • Advanced 0.7 micron CMOS process with fast 260ps gate


    OCR Scan     		PDF TC170G 260ps TC160G T0T7247 IS09000. TC170G35

    TC160G11

    Abstract: TOSHIBA TC160G TC160G22 TC160G33 tc160g16 toshiba tc110g TC160G TC163G TC140G TC110G
    Text: TOSHIBA . TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC. Preliminary TC160G and TC163G CMOS 0.8 micron Gate Arrays for Low Voltage Operation 3V/3.3V Description The T C 160G and T C 163G 0.8 m icro n ga te arra y series op e ra te at 3 V ± 0 .3 V or 3 .3 V ± 0 .3 V low vo lta g e . T hey have


    OCR Scan     		PDF TC160G TC163G TC160G11 TOSHIBA TC160G TC160G22 TC160G33 tc160g16 toshiba tc110g TC140G TC110G