tp1322
Abstract: ICS951461 218s6ecla21fg tp1217 88E8040 SOCK-30P-2R-SMD-MNT 39B4 Marvell 88E8055 SAMSUNG ELECTRONICS BA41 TP1215
Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents D XI’AN CPU :INTEL MEROM/PENRYN
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RS600ME
SB600
BA41-00859A
BA41-00860A
BA41-00861A
BA41-?
BA41-00859/60/61A
COM-22C-015
tp1322
ICS951461
218s6ecla21fg
tp1217
88E8040
SOCK-30P-2R-SMD-MNT
39B4
Marvell 88E8055
SAMSUNG ELECTRONICS BA41
TP1215
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AC adapter 19V
Abstract: ISL6266 SAMSUNG ELECTRONICS BA41 37 TV samsung lcd Schematic circuit diagram EB88CTGM SLG8SP513 PCIe_MiniCard_Slot intel 8055 SMD H21 SCREW11
Text: 3 4 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents D XI’AN-MVI CPU :INTEL MEROM/PENRYN
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BA41-00964/5/6A
Alc262
Sheet39
Sheet40
Sheet41
Isl6256a
Sheet42
Sheet43
AC adapter 19V
ISL6266
SAMSUNG ELECTRONICS BA41
37 TV samsung lcd Schematic circuit diagram
EB88CTGM
SLG8SP513
PCIe_MiniCard_Slot
intel 8055
SMD H21
SCREW11
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Marvell 88E8055
Abstract: keyboard and touchpad schematic CIS10J270NC p23 343 B530 Socket AM2 intel g41 ich9 88E8040 SAMSUNG ELECTRONICS BA41
Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents D XI’AN-MV CPU :INTEL MEROM/PENRYN
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BA41-00926A/00927A
Alc262
Sheet45
Sheet46
Isl6256a
Sheet47
Sheet48
Sheet49
Isl6266a
Marvell 88E8055
keyboard and touchpad schematic
CIS10J270NC
p23 343
B530
Socket AM2
intel g41
ich9
88E8040
SAMSUNG ELECTRONICS BA41
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TP1230
Abstract: SOCK-30P-2R-SMD-MNT 88E8040 U5025 218S6ECLA21FG ICS951461 TP1319 tp1217 DTP60-8 TP1322
Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents D XI’AN g n l u a s i t m www.kythuatvitinh.com
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RS600ME
SB600
BA41-00859A
BA41-00860A
BA41-00861A
BA41-?
BA41-00859/60/61A
COM-22C-015
TP1230
SOCK-30P-2R-SMD-MNT
88E8040
U5025
218S6ECLA21FG
ICS951461
TP1319
tp1217
DTP60-8
TP1322
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TUSB8040A1
Abstract: rkm 41
Text: TUSB8020A, TUSB8040A Four-Port and Two-Port USB 3.0 Hub PRODUCT PREVIEW information concerns products in the formative or design phase of development. Characteristic data and other specifications are design goals. Texas Instruments reserves the right to change or discontinue these products without notice.
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TUSB8020A,
TUSB8040A
TUSB8040A1
rkm 41
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RKM 51
Abstract: tusb8020 rkm 22 rkm 41 TUSB8040ARKM rkm 49 rkm 38 TUSB8040A1
Text: TUSB8020A, TUSB8040A Four-Port and Two-Port USB 3.0 Hub PRODUCT PREVIEW information concerns products in the formative or design phase of development. Characteristic data and other specifications are design goals. Texas Instruments reserves the right to change or discontinue these products without notice.
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TUSB8020A,
TUSB8040A
RKM 51
tusb8020
rkm 22
rkm 41
TUSB8040ARKM
rkm 49
rkm 38
TUSB8040A1
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Untitled
Abstract: No abstract text available
Text: TUSB8040A Four-Port USB 3.0 Hub Data Manual PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
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TUSB8040A
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AX-52 diode
Abstract: No abstract text available
Text: SKM 200GB173D Absolute Maximum Ratings Symbol Conditions IGBT ?IX& EI EI[$ ?¥X& M-^9 ,M<+16 ?'<./ M3 V PR ,ZQ6 WI + V N ;< M%TX[JME%7 _ M<+1 IGBT Modules EG EG[$ M3 V PR ,ZQ6 WI +) V N ;< EG&$ +) V NQ ;<b <' Ub M^ V NRQ WI EG EG[$ M3 V PR ,ZQ6 WI +) V N ;<
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200GB173D
200GB173D1
200GAL173D
200GAR173D
AX-52 diode
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RKM 51
Abstract: TUSB8040PFP rkm 22 90h-CFh
Text: TUSB8040 USB 3.0 Four Port Hub Data Manual PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
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TUSB8040
SLLSE42F
SLLSE42F
RKM 51
TUSB8040PFP
rkm 22
90h-CFh
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3T160
Abstract: ORP10 NT80
Text: 3. 3.1 ELECTRICAL CHARACTERISTICS UPD70335-8, 70335-10 Absolute maxi m u m ratings Pa r a m e t e r Ta=25°C Symbol Test c o n d i t i o n Ratings Unit V DD -0.5 to +7.0 V V TH -0.5 to Vpju+0.5 V VI -0.5 to V D D +0.5 V vO -0.5 to Vjjjj+0.5 V P ower suppl y v o l t a g e
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UPD70335-8,
b427525
DGti332c
UPD70335-8
b427S25
Db3355
LM27SSS
L42752S
00b3357
94-pin
3T160
ORP10
NT80
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DG7-113
Abstract: HC18U IF-151 EP-75328GC-R xi B42 tdb 0119 P30-P33 uPD75P328 tsbh1 ks04
Text: 1. PIN FUNCTIONS 1.1 Port Pins 1/2 8-bit 1/0 Pin name I/O Also used for POO 1 1NTA POI I/O SCk At reset Input/ output circuit type (Note 1) function <£> A-bit input port (PORTO). Internal pull-up resistor can be specified for P01-P03 in 3-bit units by 0-A
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P01-P03
RA75X
EEU-731
EEU-730
PG-1500
EEU-704
GG711SS
DG7-113
HC18U
IF-151
EP-75328GC-R
xi B42
tdb 0119
P30-P33
uPD75P328
tsbh1
ks04
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UPD70325-10
Abstract: xi B42 uPD70325 KR-160 IPT640
Text: 3. 3.1 ELECTRICAL SPECIFICATIONS FOR UPD70325-8, 70325-10 Absolute Maximum Ratings Ta = 25°C Parameter Symbol Te s t c o n d itions Rating Unit V DD -0.5 to +7.0 V V TH -0.5 to V d d +0.5 V Input v o l t a g e VI - 0.5 to V d d +0.5 V Output voltage V0
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uPD70325-8
uD70325-10
A19-A0
b4S752S
00b3100
b42752S
94-pin
S94GJ-80-5BG-2
00b3102
84-Pin
UPD70325-10
xi B42
uPD70325
KR-160
IPT640
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SBO 273
Abstract: hJST TWT Wiring cl100 data
Text: 5. ELECTRIC CHARACTERISTICS Absolute maximum ratings Ta=25°C Symbol Parameter Power supply voltage Input voltage Test condition -0.5 to +7.0 V AV r e f — 0.5 to V jjjj+ 0 .5 V AVSS -0.5 to +0.5 V V I1 —0.5 to V^^+0.5 V — 0.5 to AVj^gp+0•5 V —0.5 to V jjjj+O .5
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P70/ANI0-P75/ANI5,
P66/WAIT/ANI6,
P67/REFRQ/
excee20
010-OOO3
P64GC-80-AB8-3
55itg
b427S2S
SBO 273
hJST
TWT Wiring
cl100 data
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Untitled
Abstract: No abstract text available
Text: N E C ELECTRONICS INC 30E D • b427S25 00E73Eb I ■ pPD79021 16-Bit Microcomputer; Single-Chip, CMOS, With Built-In RTOS NEC Electronics Inc. _ Description The ftPD79021 is an upgraded juPD70332 V35M single chip microcomputer with a built-in real-time operating
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b427S25
00E73Eb
pPD79021
16-Bit
ftPD79021
juPD70332
/tPD79021
P24/DMAAK1
HLDAK/P26
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Untitled
Abstract: No abstract text available
Text: Data Sheet No. PD-6.026C International I R Rectifier IR2112 HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune ■ Gate drive supply range from 10 to 20V
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IR2112
5M-1982
M0-047AC.
554S2
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Untitled
Abstract: No abstract text available
Text: 11. ELECTRICAL CHARACTERISTICS Absolu te M a x i m u m R at i n g s I tem Symbol Ta = 25°C Cond ition Ratings Uni t -0.3 to +7.0 V VLOAD VDD-40 t0 VDD+0,3 V VPRE Vdd-12 to Vd d +0.3 V -0.3 to Vd d +0.3 V -0.3 to Vd d +0.3 V Vd d -4° to Vd d +0.3 V VDD
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VDD-40
Vdd-12
b427S25
64-Pin
P64CF--
100-3B8
bM27S25
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UPD75217CW
Abstract: zener diode xz 117 Kyocera Kinseki 858C zener diode xz 200
Text: 11. ELECTRICAL Absolute CHARACTERISTICS maximum Parameter Supply voltage Input voltage Output voltage High-level output current L o w - 1eve 1 output current Total power di«slpatlon * 1} ratings ( T a • 2 5 ° C Symbo1 Conditions Rated Value Un it V DD
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Vdd-40
M4C-70-J10A
64-pin
b427525
UPD75217CW
zener diode xz 117
Kyocera Kinseki
858C
zener diode xz 200
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Untitled
Abstract: No abstract text available
Text: N E C ELECTRONICS INC NEC NEC Electronics Inc. 3GE D • b427525 005S3Tt T ■ //PD75328/P328 4-Bit, Single-Chip Microcomputers with LCD Controller/Driver and A / D Converter M Description T h e ^ P D 7 5 3 2 8 and//PD75P328 are high-perform ance, sin g le -ch ip C M O S m icrocom puters that contain a
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b427525
005S3Tt
uPD75328
uPD75P328
75P328)
P60-P63
P80-P83
S12-S23
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NEX2301
Abstract: NEX2303 NEX2300 NEX230187 NEX2302 NEX230265 NEX230365
Text: N E C / CALIFORNIA NEC 1SE b42?m4 D 0001202 S .7 -3 3 r< 3 3 -o * NEX2300 SERIES 2.3 GHz POWER OSCILLATOR TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • HIG H POWER: 3.2 W AT 2.3 GHz The NEX2300 series is an NPN transistor using NEC’s ad vanced Stepped Electrode Transistor SET structure with
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NEX2300
NEX2300
NEX2301
NEX2302
NEX2303
NEX230365
NEX230187
NEX230265
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Untitled
Abstract: No abstract text available
Text: b427525 0042323 TbS » N E C E f MOS INTEGRATED C IR CU IT H / P D 4 2 S 1 6 1 6 L , 4 2 S 1 7 1 6 L , 4 2 S 1 8 1 6 L 16 M BIT D Y N A M IC RAM 3 .3 V FAST PAGE M O D E & BYTE R E A D /W R IT E M O DE -P R E L IM IN A R Y -D ESCRIPTIO N
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b427525
PD42S16160L,
PD42S17160L
/zPD42S18160L
P32VF-100-475A
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ST 27C1000
Abstract: No abstract text available
Text: O K I Semiconductor MSM6690 RO M Interface LSI DESCRIPTIO N The MSM6690 is a LSI capable of driving 3 devices of 131,072 x 8 bit EPROM or MASKROM. m VDD SADX H SADY I SÄSX 38 ] S Ä S Y DOUT | T T ESTO 1 Ö L The MSM6690 is provided with a built-in internal
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MSM6690
MSM6690
MSM6690,
MSM6388
MSM6588)
MSM6389,
MSM6587
MSM6586)
fix23Y1018
ST 27C1000
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UPD75P402CT
Abstract: UPD75P402 UPD75P402C FT-X1 UPD75P402GB-3B4 UPD75P402GB op61 UPD75402A BH-27-5 IEM-5504
Text: The UPD75P402 UPD75402A is a Q T O P microcomputer provided internal mask ROM with one-time PROM. by replacing The UPD75P402 into which the user can write programs is suitable for evaluation during system development or small production. Please refer IEU-644
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uPD75P402
UPD75402A
IEU-644)
UPD27C256A
-bH27525
UPD75P402CT
UPD75P402C
FT-X1
UPD75P402GB-3B4
UPD75P402GB
op61
BH-27-5
IEM-5504
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uPD78P014YCW
Abstract: No abstract text available
Text: N E C ELECTRONICS INC b4E D • L.427SES 003fl24b 127 « N E C E CHAPTER 1. 1.1 OUTLINE FEATURES o Serial bus interface: 2 channels . 3-wire/SBI/2-wire/I2C bus mode: 1 channel . 3-wire mode built-in automatic transmission/reception function : 1 channel o Built-in large-capacity ROM and RAM
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427SES
003fl24b
UPD78011Y
UPD78012Y
UPD78013Y
uPD78014Y
uPD78POl4Yr-PROM
b427525
b427S25
DQ3fi27b
uPD78P014YCW
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PD22148
Abstract: No abstract text available
Text: DATA SH EET NEC MOS INTEGRATED C IR C U IT BfCTRON DEVICE /¿PD22100,/<PD22148 C R O S S P O IN T S W IT C H W IT H C O N T R O L M E M O R Y C M O S 1C The ¿iPD22100 consists of 16 crosspoint switches organized in 4 rows and 4 columns, and the ¿ PD22148 con
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PD22100
PD22148
iPD22100
PD22148
PD22100
020-o
b42752S
010-o
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