Y PARAMETERS OF TRANSISTORS IN HIGH FREQUENCY Search Results

Y PARAMETERS OF TRANSISTORS IN HIGH FREQUENCY Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
MG800FXF1JMS3	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET
MG800FXF1ZMS3	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD
TLP5702H	Toshiba Electronic Devices & Storage Corporation	Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L

Y PARAMETERS OF TRANSISTORS IN HIGH FREQUENCY Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: MJ15020 − NPN MJ15021 − PNP Preferred Devices Complementary Silicon Power Transistors These transistors are designed for use as high frequency drivers in Audio Amplifiers. Features • • • • http://onsemi.com 4.0 AMPERES COMPLEMENTARY SILICONPOWER TRANSISTORS	Original	MJ15020 MJ15021 MJ15020/D	PDF
mj15020 Abstract: MJ15021 MJ15020G MJ15021G Text: MJ15020 − NPN MJ15021 − PNP Preferred Devices Complementary Silicon Power Transistors These transistors are designed for use as high frequency drivers in Audio Amplifiers. Features • • • • http://onsemi.com 4.0 AMPERES COMPLEMENTARY SILICONPOWER TRANSISTORS	Original	MJ15020 MJ15021 MJ15020 MJ15021 MJ15020/D MJ15020G MJ15021G	PDF
MJ15020 Abstract: No abstract text available Text: MJ15020 − NPN MJ15021 − PNP Preferred Devices Complementary Silicon Power Transistors These transistors are designed for use as high frequency drivers in Audio Amplifiers. Features • • • • http://onsemi.com 4.0 AMPERES COMPLEMENTARY SILICONPOWER TRANSISTORS	Original	MJ15020 MJ15021 MJ15020/D	PDF
D44VH Abstract: D44VH10 MOTOROLA TRANSISTOR D45VH D45VH10 Text: MOTOROLA Order this document by D44VH/D SEMICONDUCTOR TECHNICAL DATA NPN D44VH PNP D45VH Complementary Silicon Power Transistors These complementary silicon power transistors are designed for high–speed switching applications, such as switching regulators and high frequency inverters.	Original	D44VH/D* D44VH/D D44VH D44VH10 MOTOROLA TRANSISTOR D45VH D45VH10	PDF
MJ-15016 Abstract: TRANSISTOR mj15020 MJ-15020 2N3055A MJ15015 MJ15016 MJ15018 MJ15019 MJ15020 MJ15021 Text: MOTOROLA Order this document by MJ15018/D SEMICONDUCTOR TECHNICAL DATA MJ15015, MJ15016 See 2N3055A Advance Information NPN MJ15018 Complementary Silicon Power Transistors MJ15020* PNP MJ15019 . . . designed for use as high frequency drivers in Audio Amplifiers.	Original	MJ15018/D* MJ15018/D MJ-15016 TRANSISTOR mj15020 MJ-15020 2N3055A MJ15015 MJ15016 MJ15018 MJ15019 MJ15020 MJ15021	PDF
high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz Abstract: S11A1 Glossary of Microwave Transistor Terminology Text: High-Frequency Transistor Primer Part I Silicon Bipolar Electrical Characteristics Table of Contents I. Transistor Structure Types . A. Bipolar .	Original	5966-3085E high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz S11A1 Glossary of Microwave Transistor Terminology	PDF
high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz Abstract: Glossary of Microwave Transistor Terminology Text: High-Frequency Transistor Primer Part I Silicon Bipolar Electrical Characteristics Table of Contents I. Transistor Structure Types . A. Bipolar .	Original	5966-3085E high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz Glossary of Microwave Transistor Terminology	PDF
RF transistors with s-parameters Abstract: MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor s11 s12 s21 s22 Hewlett-Packard transistor microwave Text: High-Frequency Transistor Primer Part II Noise and S-parameter Characterization This is the second part of the Hewlett-Packard High Frequency Transistor Primer series. It is an introduction to the noise and S-parameter characterization of GaAs FET and silicon bipolar	Original	5091-8350E 5968-1411E RF transistors with s-parameters MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor s11 s12 s21 s22 Hewlett-Packard transistor microwave	PDF
transistor s11 s12 s21 s22 Abstract: 5091-8350E MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT high power FET transistor s-parameters s11a1 s-parameter s11 s12 s21 Text: High-Frequency Transistor Primer Part II Noise and S-parameter Characterization This is the second part of the Hewlett-Packard High Frequency Transistor Primer series. It is an introduction to the noise and S-parameter characterization of GaAs FET and silicon bipolar	Original	5091-8350E 5968-1411E transistor s11 s12 s21 s22 5091-8350E MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT high power FET transistor s-parameters s11a1 s-parameter s11 s12 s21	PDF
Y parameters of transistors Abstract: power transistor transistors equivalents transistor equivalent table MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor 2N2219 data sheet 1721E50R MARKING 41B transistor marking pl y1 marking code transistor similar 2N2219 transistor Text: Philips Semiconductors RF & Microwave Power Transistors General MARKING CODES FOR RF POWER TRANSISTORS MARKING CODES FOR MICROWAVE TRANSISTORS For the purposes of matched pair applications, RF power MOS transistors are marked with a code that indicates their gate-source voltage range see Table 8 .	Original	MC3403 2N2219 1N4148 MBC775 Y parameters of transistors power transistor transistors equivalents transistor equivalent table MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor 2N2219 data sheet 1721E50R MARKING 41B transistor marking pl y1 marking code transistor similar 2N2219 transistor	PDF
MJ15020 Abstract: MJ15021 Text: ON Semiconductort NPN MJ15020 * PNP * MJ15021 Complementary Silicon Power Transistors . . . designed for use as high frequency drivers in Audio Amplifiers. *ON Semiconductor Preferred Device • High Gain Complementary Silicon Power Transistors • Safe Operating Area 100% Tested 50 V, 3.0 A, 1.0 Sec.	Original	MJ15020 MJ15021 r14525 MJ15020/D MJ15020 MJ15021	PDF
MJ1502 Abstract: MJ150 MJ15018 MJ15019 MJ15020 MJ15021 MJ-15018 Text: ON Semiconductort NPN MJ15018 Complementary Silicon Power Transistors MJ15020 * PNP MJ15019 . . . designed for use as high frequency drivers in Audio Amplifiers. • High Gain Complementary Silicon Power Transistors • Safe Operating Area 100% Tested 50 V, 3.0 A, 1.0 Sec.	Original	MJ15018 MJ15020 MJ15019 MJ15021 r14525 MJ15018/D MJ1502 MJ150 MJ15018 MJ15019 MJ15020 MJ15021 MJ-15018	PDF
FET K161 Abstract: S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR Text: Radio-Frequency Semiconductors Transistors, FETs, Cell Packs Semiconductor Company The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or	Original	3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 S-AV26H FET K161 S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR	PDF
MJW0281A Abstract: MJW0302A Text: MJW0281A NPN MJW0302A (PNP) Preferred Devices Advance Information Complementary NPN−PNP Silicon Power Bipolar Transistors http://onsemi.com The MJW0281A and MJW0302A are PowerBase t power transistors for high power audio. • Designed for 100 W Audio Frequency Applications	Original	MJW0281A MJW0302A MJW0281A MJW0302A MJW0281A/D	PDF

gummel Abstract: small signal high frequency bipolar transistor IC sequential DATA BASE 60Ghz gex 96 a TRANSISTOR 30GHZ transistor RBV cbv2 Y parameters of transistors in high frequency Text: IEEE BCTM 6.1 Im proved E xtraction o f B ase and E m itter R esistan ce from Sm all Signal H igh Frequency A d m itta n ce M easurem ents W.J: Kloosterm an, J.C.J. Paasschens and D.B.M . Klaassen Philips Research Laboratories, Prof. Holstlaan 4, 5656 A A Eindhoven, The Netherlands	OCR Scan	ED-31 2048/JessiT28 30GHz, 60Ghz gummel small signal high frequency bipolar transistor IC sequential DATA BASE gex 96 a TRANSISTOR 30GHZ transistor RBV cbv2 Y parameters of transistors in high frequency	PDF
J305 Abstract: No abstract text available Text: MOTOROLA Order this document by J304/D SEMICONDUCTOR TECHNICAL DATA JFET High Frequency Am plifiers N-Channel — Depletion J304 J305 1 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit Drain-Gate Voltage V DG -3 0 Vdc Gate-Source Voltage VGS -3 0 Vdc Gate Current	OCR Scan	J304/D 226AA) J305	PDF
2N3418 Abstract: 2N3419 tata ak 90 2N3420 2N3421 TIX3033 TNR*G TIX3034 TIX3035 TIX3036 Text: TYPES 2N3418, 2N3419, 2N3420, 2N3421 N-P-N EPITAXIAL PLANAR SILICON MEDIUM-POWER TRANSISTORS HIGH-FREQUENCY MEOIUM-POWER TRANSISTORS Formerly TIX3033, TIX3034, TIX3035, TIX3036 • High-Power Dissipationin TO-5 Package: 15 watts at Tc = 100‘ C • Low-Leakage Current:	OCR Scan	2N3418, 2N3419, 2N3420, 2N3421 TIX3033, TIX3034, TIX3035, TIX3036 2N3418 2N3419 tata ak 90 2N3420 TIX3033 TNR*G TIX3034 TIX3035 TIX3036	PDF
harris 8 lead cerdip DIMENSIONS Abstract: No abstract text available Text: HFA3127/883 HARRIS S E M I C O N D U C T O R Ultra High Frequency Transistor Array February 1995 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conform ant Under the Provisions of Paragraph 1.2.1. The HFA3127/883 is an Ultra High Frequency Transistor	OCR Scan	HFA3127/883 HFA3127/883 1-800-4-HARRIS harris 8 lead cerdip DIMENSIONS	PDF
Untitled Abstract: No abstract text available Text: Pfitttl G £ C P L E S S E Y ADVANCE INFORMATION DS3628 • 1.3 SL3227 3GHz NPN TRANSISTOR ARRAYS The SL3227 is a monolithic array of the five high frequency low current NPN transistors in a 16 lead DIL package. The transistors exhibit typical fr of 3GHz and wideband noise	OCR Scan	DS3628 SL3227 SL3227 CA3127 SL3127. 60MHz	PDF
Untitled Abstract: No abstract text available Text: PQtm GEC P L E S S E Y ADVANCE INFORMATION DS3627 • 1.3 SL3145 1,6GHz NPN TRANSISTOR ARRAYS The SL3145 is a monolithic array of five high frequency low current NPN transistors. The SL3145 consists of 3 isolated transistors and a differential pair in a 14 lead SO package The	OCR Scan	S3627 SL3145 SL3145 CA3046. 200MHz)	PDF
j300 Abstract: J300D Text: MOTOROLA Order this document by J300/D SEMICONDUCTOR TECHNICAL DATA JFET High Frequency Am plifier N-Channel — Depletion J300 1 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit VDG -25 Vdc Gate Current >G 10 mA Total Device Dissipation @ Ta = 25°C Derate above 25°C	OCR Scan	J300/D j300 J300D	PDF
Untitled Abstract: No abstract text available Text: CA3127 HARRIS S E M I C O N D U C T O R High Frequency N-P-N Transistor Array March 1993 Features Description • Gain Bandwidth Product fT . >1GHz The CA3127* consists of five general purpose silicon n-p-n transistors on a common monolithic substrate. Each of the	OCR Scan	CA3127 CA3127* CA3127 500MHz. TA6206. 100MHz	PDF
lm 7803 Abstract: ED-46 Text: IEEE BCTM 3.3 Improved Modeling of Output Conductance and Cut-off Frequency of Bipolar Transistors J.C.J. Paasschens, W.J. Kloosterman, R.J. Havens*, and H.C. de Graafft "Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands	OCR Scan	ED-42 VBIC95, ED-46 lm 7803 ED-46	PDF
Untitled Abstract: No abstract text available Text: GEC PLESSEY S [ M I O M U C I O K S ADVANCE INFORMATION SL3227 3GHz NPN TRANSISTOR ARRAYS The SL3227 is a monolithic array of the five high frequency low current NPN transistors in a 16 lead DIL package. The transistors exhibit typical ( t of 3GHz and wideband noise	OCR Scan	SL3227 SL3227 CA3127 SL3127. fl522 D21CH1 60MHz	PDF

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Y PARAMETERS OF TRANSISTORS IN HIGH FREQUENCY Search Results

Y PARAMETERS OF TRANSISTORS IN HIGH FREQUENCY Result Highlights (5)

Y PARAMETERS OF TRANSISTORS IN HIGH FREQUENCY Datasheets Context Search

Untitled

mj15020

MJ15020

D44VH

MJ-15016

high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz

high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz

RF transistors with s-parameters

transistor s11 s12 s21 s22

Y parameters of transistors

MJ15020

MJ1502

FET K161

MJW0281A

gummel

J305

2N3418

harris 8 lead cerdip DIMENSIONS

Untitled

Untitled

j300

Untitled

lm 7803

Untitled