PXT8050
Abstract: Y1 SOT-89 marking y1 marking y1 sot-89
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 PXT8050 Plastic-Encapsulate Transistors SOT-89 TRANSISTOR NPN FEATURES z Compliment to PXT8550 1. BASE MARKING: Y1 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value
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OT-89
PXT8050
PXT8550
100mA
800mA
800mA,
30MHz
PXT8050
Y1 SOT-89
marking y1
marking y1 sot-89
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74LVC1G3157GV
Abstract: No abstract text available
Text: 74LVC1G3157 2-channel analog multiplexer/demultiplexer Rev. 4 — 6 December 2011 Product data sheet 1. General description The 74LVC1G3157 provides one analog multiplexer/demultiplexer with one digital select input S , two independent inputs/outputs (Y0, Y1) and a common input/output (Z).
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74LVC1G3157
74LVC1G3157
74LVC1G3157GV
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74LVC1G3157GW
Abstract: 74LVC1G3157 74LVC1G3157GV digital demultiplexer 74LVC1G3157GF 74LVC1G3157GM 74LVC1G3157GN
Text: 74LVC1G3157 2-channel analog multiplexer/demultiplexer Rev. 3 — 16 September 2010 Product data sheet 1. General description The 74LVC1G3157 provides one analog multiplexer/demultiplexer with one digital select input S , two independent inputs/outputs (Y0, Y1) and a common input/output (Z).
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74LVC1G3157
74LVC1G3157
74LVC1G3157GW
74LVC1G3157GV
digital demultiplexer
74LVC1G3157GF
74LVC1G3157GM
74LVC1G3157GN
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74LVC1G3157GV
Abstract: No abstract text available
Text: 74LVC1G3157 2-channel analog multiplexer/demultiplexer Rev. 4 — 6 December 2011 Product data sheet 1. General description The 74LVC1G3157 provides one analog multiplexer/demultiplexer with one digital select input S , two independent inputs/outputs (Y0, Y1) and a common input/output (Z).
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74LVC1G3157
74LVC1G3157
74LVC1G3157GV
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74LVC1G3157GV
Abstract: No abstract text available
Text: 74LVC1G3157 2-channel analog multiplexer/demultiplexer Rev. 5 — 6 December 2012 Product data sheet 1. General description The 74LVC1G3157 provides one analog multiplexer/demultiplexer with one digital select input S , two independent inputs/outputs (Y0, Y1) and a common input/output (Z).
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74LVC1G3157
74LVC1G3157
74LVC1G3157GV
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HVSON2
Abstract: SOT899-1 sot899
Text: Package outline Philips Semiconductors HVSON2: plastic thermal enhanced very thin small outline package; no leads; 2 terminals; body 3 x 2 × 0.85 mm D SOT899-1 A B A E A1 detail X terminal 1 index area C ∅v ∅w b terminal 1 index area M M y1 C C A B C
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OT899-1
HVSON2
SOT899-1
sot899
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Y1 SOT-89
Abstract: PXT8050 Marking y1 marking Y1 transistor marking y1 sot-89 transistor marking y1 y1 sot89 PXT8050 Y1
Text: PXT8050 SOT-89 Transistor NPN 1. BASE 2. COLLECTOR SOT-89 3. EMITTER Features 4.6 4.4 1.8 1.4 1.6 1.4 B Compliment to PXT8550 2.6 4.25 2.4 3.75 MARKING: Y1 0.8 MIN 0.44 0.37 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units
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PXT8050
OT-89
OT-89
PXT8550
800mA
800mA,
30MHz
100uA,
100mA
Y1 SOT-89
PXT8050
Marking y1
marking Y1 transistor
marking y1 sot-89
transistor marking y1
y1 sot89
PXT8050 Y1
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Untitled
Abstract: No abstract text available
Text: Package outline HVSON2: plastic thermal enhanced very thin small outline package; no leads; 2 terminals; body 3 x 2 × 0.85 mm D SOT899-1 A B A E A1 detail X terminal 1 index area C ∅v ∅w b terminal 1 index area M M y y1 C C A B C 1 L e Eh 2 X Dh 1 2 mm
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OT899-1
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Untitled
Abstract: No abstract text available
Text: Package outline HTQFN48R: plastic thermal enhanced thin quad flat package; no leads; 48 terminals; resin based; body 7 x 7 × 1 mm B D SOT898-1 A terminal 1 index area A E detail X e1 L C e L1 ∅v ∅w 1/2 e b 13 24 M y y1 C C A B C M 25 12 e e2 Eh 1/2 e
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HTQFN48R:
OT898-1
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sot894
Abstract: No abstract text available
Text: Package outline Philips Semiconductors LFBGA280: plastic low profile fine-pitch ball grid array package; 280 balls; body 11 x 11 x 1 mm B D SOT894-1 A ball A1 index area A E A2 A1 detail X e1 e C 1/2 e ∅v ∅w b M M y1 C C A B C y Y W V e U T R P N M L e2
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LFBGA280:
OT894-1
sot894
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sot893
Abstract: No abstract text available
Text: Package outline Philips Semiconductors LFBGA240: plastic low profile fine-pitch ball grid array package; 240 balls; body 11 x 11 x 1 mm A B D SOT893-1 ball A1 index area A E A2 A 1 detail X e1 e C 1/2 e ∅v ∅w b M M y1 C C A B C y V U T e R P N M L K e2
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LFBGA240:
OT893-1
sot893
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Untitled
Abstract: No abstract text available
Text: Package outline LFBGA240: plastic low profile fine-pitch ball grid array package; 240 balls; body 11 x 11 x 1 mm A B D SOT893-1 ball A1 index area A E A2 A 1 detail X e1 e V T P M K H F D B C 1/2 e ∅v ∅w b M M y y1 C C A B C U e R N L e2 J 1/2 e G E C
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LFBGA240:
OT893-1
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Untitled
Abstract: No abstract text available
Text: Package outline LFBGA280: plastic low profile fine-pitch ball grid array package; 280 balls; body 11 x 11 x 1 mm B D SOT894-1 A ball A1 index area A E A2 A1 detail X e1 e Y V T P M K H F D B C 1/2 e ∅v ∅w b M M y y1 C C A B C W e U R N L e2 J 1/2 e G E
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LFBGA280:
OT894-1
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Untitled
Abstract: No abstract text available
Text: AP1117/AP1117I 1A DROPOUT POSITIVE ADJUSTABLE OR FIXED-MODE REGULATOR Description Pin Assignments AP1117 is a low dropout positive adjustable or fixed-mode regulator SOT89-3 with 1A output current capability. The product is voltage specifically designed to provide well-regulated supply for low IC applications such
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AP1117/AP1117I
AP1117
AP1117)
AP1117I)
OT223)
DS31009
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adj1117
Abstract: marking Y2 transistor
Text: AP1117/AP1117I 1A DROPOUT POSITIVE ADJUSTABLE OR FIXED-MODE REGULATOR Description Pin Assignments AP1117 is a low dropout positive adjustable or fixed-mode regulator SOT89-3 with 1A output current capability. The product is voltage specifically designed to provide well-regulated supply for low IC applications such
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AP1117/AP1117I
AP1117
AP1117)
AP1117I)
OT223)
DS31009
adj1117
marking Y2 transistor
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sot890
Abstract: 14X14
Text: Package outline Philips Semiconductors VFBGA353S: plastic very thin fine-pitch ball grid array package; 353 balls; top 152 lands; stackable; body 14 x 14 x 0.6 mm B D e4 D1 2 4 1 3 6 8 5 ∅v ∅w b e3 ball/land A1 index area 7 10 9 12 11 SOT890-1 14 13 16
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VFBGA353S:
OT890-1
sot890
14X14
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Untitled
Abstract: No abstract text available
Text: Package outline VFBGA353S: plastic very thin fine-pitch ball grid array package; 353 balls; top 152 lands; stackable; body 14 x 14 x 0.6 mm D e4 ball/land A1 index area 1 2 3 4 6 5 7 8 B D1 e3 9 10 11 SOT890-1 ∅v ∅w b1 12 13 14 15 16 18 20 17 19 C A B
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VFBGA353S:
OT890-1
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c3v9
Abstract: c9v1 c5v6 BZV49 93 SOT89 c24 Zener c22 zener C8V2 c4v7 x5 sot89
Text: BZV49 SERIES ISSUE 4 - AUGUST 1996 ELECTRICAL CHARACTERISTICS at Tamb = 25°C . Zener Voltage VZ at IZ=2mA Type VOLTS BZV49: Nom. BZV49 SERIES SOT89 SILICON PLANAR VOLTAGE REGULATOR DIODES Differential Resistance rZ at IZ=2mA Ω Temperature Coefficient SZ at IZ=2mA
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BZV49
BZV49:
c3v9
c9v1
c5v6
BZV49
93 SOT89
c24 Zener
c22 zener
C8V2
c4v7
x5 sot89
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IPC-7351A
Abstract: MiniMELF land pattern land pattern for TSsOP 16 land pattern for TSSOP sot89 land pattern PowerDI3333-8 SOD-323 land pattern y1 SOT23 DFN2020 SOD523 land pattern
Text: SUGGESTED PAD LAYOUT Based on IPC-7351A DFN1006-2 / DFN1006H4-2 / MiniMELF / MELF / SOD-323 / SOD-123 / SOD-523 / SMA / SMB / SMC C X G Y Z Dimensions Z G X Y C DFN1006-2 / MiniMELF DFN1006H4-2 1.1 4.7 0.3 2.1 0.7 1.7 0.4 1.3 0.7 3.5 MELF SOD-123 SOD-323 SOD-523
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IPC-7351A
DFN1006-2
DFN1006H4-2
OD-323
OD-123
OD-523
DFN1006H4-2
OD-123
OD-323
IPC-7351A
MiniMELF land pattern
land pattern for TSsOP 16
land pattern for TSSOP
sot89 land pattern
PowerDI3333-8
SOD-323 land pattern
y1 SOT23
DFN2020
SOD523 land pattern
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Diodes Incorporated 17-33
Abstract: y1 marking code transistor ZXTN4004
Text: A Product Line of Diodes Incorporated ZXTN4004Z 150V NPN LED DRIVING TRANSISTOR IN SOT89 Features Mechanical Data • • • • • • • • • • • • BVCEO > 150V hFE > 100 for IC = 150mA, VCE = 0.25V Maximum continuous current IC = 1A Lead Free, RoHS Compliant Note 1
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ZXTN4004Z
150mA,
AEC-Q101
J-STD-020
ZXTN4004ZTA
DS35457
Diodes Incorporated 17-33
y1 marking code transistor
ZXTN4004
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXTP4001Z 60V PNP LED DRIVING TRANSISTOR IN SOT89 Features Mechanical Data • • • • • • • • • • • • BVCEO > - 60V Max continuous current IC cont = -1A hFE > 100 @ IC = -150mA, VCE = -150mV Totally Lead-Free & Fully RoHS compliant (Note 1)
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ZXTP4001Z
-150mA,
-150mV
AEC-Q101
J-STD-020
ZXTN4001ZTA
DS35712
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FCX591ATA
Abstract: Diodes Incorporated 17-33 FCX491A FCX591A 17-33 sot89 DIODES Inc diodes marking
Text: A Product Line of Diodes Incorporated FCX591A 40V PNP SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • • • • • • • • • • V BR CEO > -40V High current capability IC = -1A Low saturation voltage VCE(sat) < -500mV @ -1A
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FCX591A
-500mV
FCX491A
J-STD-020
FCX591ATA
FCX591A-7
DS33062
FCX591ATA
Diodes Incorporated 17-33
FCX491A
FCX591A
17-33 sot89
DIODES Inc diodes marking
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BST52TA
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated BST52 80V NPN SILICON PLANAR DARLINGTON TRANSISTOR IN SOT89 Features Mechanical Data • • • • • • • • • • • • BVCEO > 80V High current gain Max Continuous Current IC = 500mA Fast switching Lead Free, RoHS Compliant Note 1
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BST52
500mA
AEC-Q101
J-STD-020
BST52TA
DS33022
BST52TA
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXTP4003Z 100V PNP LED DRIVING TRANSISTOR IN SOT89 Features Mechanical Data • • • • • • • • • • • • BVCEO > -100V Maximum continuous current IC = -1A hFE > 100 @ IC = -150mA, VCE = -0.2V Lead Free, RoHS Compliant Note 1
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ZXTP4003Z
-100V
-150mA,
AEC-Q101
J-STD-020
DS35460
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