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    Y1 TRANSISTOR Search Results

    Y1 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    Y1 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    xps-CM

    Abstract: telemecanique D range contactors Telemecanique XVB C 21 telemecanique limit switch Telemecanique VO relay safety telemecanique manual telemecanique contactors Y33-Y34 S18PP340 telemecanique hand switch
    Text: Telemecanique XPS-CM U+ U– A1 UV Y4 Y5 Y33 Y3 Z1 Z3 H1 T1 13 23 Y1 Y2 VE NT TY PE Muting Start Y4 34 2 UV Y64 Y54U– 4U+ Muting 1 Start N TA XP S - Y33 13 23 Y1 Y2 UV H1 2 CM + 4 Y34 Y4 14 24 4 Y54 Y6 4 4 Y54 Y6 4 se ed requir /A2-Fu 1 – A1 command -24 closed


    Original     		PDF 14IES 4V/20mA) A/143/00 xps-CM telemecanique D range contactors Telemecanique XVB C 21 telemecanique limit switch Telemecanique VO relay safety telemecanique manual telemecanique contactors Y33-Y34 S18PP340 telemecanique hand switch

    PXT8050

    Abstract: Y1 SOT-89 marking y1 marking y1 sot-89
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 PXT8050 Plastic-Encapsulate Transistors SOT-89 TRANSISTOR NPN FEATURES z Compliment to PXT8550 1. BASE MARKING: Y1 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value


    Original     		PDF OT-89 PXT8050 PXT8550 100mA 800mA 800mA, 30MHz PXT8050 Y1 SOT-89 marking y1 marking y1 sot-89

    ss8050 sot-323

    Abstract: SS8050 Y1 ss8050 TRANSISTOR SS8050 SS8050 equivalent ss8550
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SS8050 TRANSISTOR NPN SOT-323 FEATURES Complimentary to SS8550 1. BASE 2. EMITTER MARKING: Y1 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol


    Original     		PDF OT-323 SS8050 OT-323 SS8550 ss8050 sot-323 SS8050 Y1 ss8050 TRANSISTOR SS8050 SS8050 equivalent ss8550

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SS8050 TRANSISTOR NPN SOT-323 FEATURES Complimentary to SS8550 1. BASE 2. EMITTER MARKING: Y1 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol


    Original     		PDF OT-323 SS8050 OT-323 SS8550

    ss8050 sot-23

    Abstract: SS8050 sot-23 Y1 ss8550 sot-23 SS8050 Y1 SOT-23 SS8050 Y1 SS8050 equivalent SS8050 sot-23 equivalent ss8550 Y1 marking transistor sot23
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SS8050 SOT-23 TRANSISTOR NPN 1. BASE FEATURES Complimentary to SS8550 2. EMITTER 3. COLLECTOR MARKING: Y1 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF OT-23 SS8050 OT-23 SS8550 ss8050 sot-23 SS8050 sot-23 Y1 ss8550 sot-23 SS8050 Y1 SOT-23 SS8050 Y1 SS8050 equivalent SS8050 sot-23 equivalent ss8550 Y1 marking transistor sot23

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SS8050 SOT-23 TRANSISTOR NPN 1. BASE FEATURES Complimentary to SS8550 2. EMITTER 3. COLLECTOR MARKING: Y1 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF OT-23 SS8050 OT-23 SS8550 100mA 800mA 800mA, 30MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SS8050 SOT-23 TRANSISTOR NPN 1. BASE FEATURES Complimentary to SS8550 2. EMITTER 3. COLLECTOR MARKING: Y1 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF OT-23 SS8050 OT-23 SS8550 100mA 800mA 800mA, 30MHz

    74LVC1G3157GW

    Abstract: 74LVC1G3157 74LVC1G3157GV digital demultiplexer 74LVC1G3157GF 74LVC1G3157GM 74LVC1G3157GN
    Text: 74LVC1G3157 2-channel analog multiplexer/demultiplexer Rev. 3 — 16 September 2010 Product data sheet 1. General description The 74LVC1G3157 provides one analog multiplexer/demultiplexer with one digital select input S , two independent inputs/outputs (Y0, Y1) and a common input/output (Z).


    Original     		PDF 74LVC1G3157 74LVC1G3157 74LVC1G3157GW 74LVC1G3157GV digital demultiplexer 74LVC1G3157GF 74LVC1G3157GM 74LVC1G3157GN

    Untitled

    Abstract: No abstract text available
    Text: Doc No. TT4-EA-12746 Revision. 2 Product Standards MOS FET FL6L52010L FL6L52010L Silicon P-channel MOSFET FET Silicon epitaxial planar type(SBD) Unit : mm 1.6 For switching For DC-DC Converter 0.2 0.13 6 5 4 1 2 3 • Features  Marking Symbol : Y1 1.4


    Original     		PDF TT4-EA-12746 FL6L52010L UL-94

    IC800

    Abstract: y1 npn SS8050LT1
    Text: SS8050LT1 NPN General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 V CEO Value 25 40 6.0 1500 625 5.0 200 SS8050LT1=Y1 25 0.1 40 100 6.0 100 E=20 Vdc, I E= 0 40 5.0 WEITRON http://www.weitron.com.tw ) O 0.1 u 0.1 u 0.1 u SS8050LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)


    Original     		PDF SS8050LT1 OT-23 SS8050LT1 80mAdc) OT-23 IC800 y1 npn

    Power bjt

    Abstract: bjt npn of lcd resistor 820k power bjt datasheet SN69040 27010 eprom sonix NPN transistor 8050
    Text: SN69000 E.V. Board LCD Controller with Voice/Dual Tone Melody „ OVERVIEW I/O COM EPROM C SEG Figure-1 Reset VLC Y1,C2,C3 Power BJT LED R OSC SPK L1 & BUZ Figure-1 „ CHIPS EMULATED SN69040 only 1 December 26, 2000 SN69000 E.V. Board LCD Controller with Voice/Dual Tone Melody


    Original     		PDF SN69000 SN69040 128Kx8) Power bjt bjt npn of lcd resistor 820k power bjt datasheet 27010 eprom sonix NPN transistor 8050

    MAX17108E

    Abstract: MAX17108 TRANSISTOR y9 Y1Y10 MAX17108ETI TRANSISTOR Y10 VCOM LCD a7a10 tft type lcd driver
    Text: 19-4347; Rev 0; 10/08 KIT ATION EVALU E L B A IL AVA 10-Channel High-Voltage Scan Driver and VCOM Amplifier for TFT LCD Panels The MAX17108 includes a 10-channel high-voltage level-shifting scan driver and a VCOM amplifier. The device is optimized for thin-film transistor TFT liquidcrystal display (LCD) applications.


    Original     		PDF 10-Channel MAX17108 28-pin, T2855-6 MAX17108E TRANSISTOR y9 Y1Y10 MAX17108ETI TRANSISTOR Y10 VCOM LCD a7a10 tft type lcd driver

    HD61105

    Abstract: HD66310 transistor d145
    Text: HD66310T TFT-Type LCD Driver for VDT Description Features The HD66310T is a drain bus driver for TFT-type thin film transistor LCDs. It receives 3-bit digital data for one dot, selects a level from eight voltage levels, and outputs the level to an LCD. • Full color display: a maximum of 4096 colors


    Original     		PDF HD66310T HD66310T HD66310T00) HD66310T0015) signa100 HD61105 HD66310 transistor d145

    CL2U

    Abstract: HD66330T HD66330TA0 y192 236PIN
    Text: HD66330T TFT Driver (64-Level Gray Scale Driver for TFT Liquid Crystal Display) Description The HD66330T, a signal driver LSI, drives an active matrix LCD panel having TFTs (thin film transistor) in the picture element (pixel) area. The LSI receives 6-bit digital display data per dot and outputs


    Original     		PDF HD66330T 64-Level HD66330T, HD66330T CL2U HD66330TA0 y192 236PIN

    6030v4

    Abstract: Y190
    Text: HD66330T TFT Driver 64-Level Gray Scale Driver for TFT Liquid Crystal Display Description Features The HD66330T, a signal driver LSI, drives an active matrix LCD panel having TFTs (thin film transistor) in the picture element (pixel) area. The LSI receives 6-bit digital display data per dot and


    Original     		PDF HD66330T 64-Level HD66330T, HD66330T 6030v4 Y190

    TRANSISTOR Y237

    Abstract: 15-V HD66320T Y239
    Text: HD66320T TFT Driver (64-level Gray Scale Driver for High-Quality TFT Liquid Crystal Display) Preliminary May 1995 The HD66320T, a source driver LSI, drives an active matrix LCD panel having TFTs (thin film transistor) in the picture element (pixel) area. The LSI receives 6-bit digital display data per pixel and


    Original     		PDF HD66320T 64-level HD66320T, Y1-240 TRANSISTOR Y237 15-V HD66320T Y239

    2N60 transistor

    Abstract: all transistor 2N60 transistor 2n60 02N60 2N60 MOSFET MARK y2 y1 marking code transistor 2n60 application 2n60 MOSFEt marking code diode 648
    Text: HI-SINCERITY Spec. No. : MOS200403 Issued Date : 2004.07.01 Revised Date : 2005.07.14 Page No. : 1/6 MICROELECTRONICS CORP. H02N60 Series H02N60 Series Pin Assignment 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab N-Channel Power Field Effect Transistor


    Original     		PDF MOS200403 H02N60 O-252 200oC 183oC 217oC 260oC 245oC H02N60I, 2N60 transistor all transistor 2N60 transistor 2n60 02N60 2N60 MOSFET MARK y2 y1 marking code transistor 2n60 application 2n60 MOSFEt marking code diode 648

    MAX17119EVKIT

    Abstract: max17119E Q1/C84-8
    Text: 19-5078; Rev 1; 4/10 MAX17119 Evaluation Kit The MAX17119 evaluation kit EV kit is a fully assembled and tested surface-mount PCB that evaluates the MAX17119 (IC) 10-channel, high-voltage, level-shifting scan driver for active-matrix, thin-film transistor (TFT),


    Original     		PDF MAX17119 MAX17119 10-channel, MAX17119EVKIT max17119E Q1/C84-8

    HSB857J

    Abstract: a5 marking
    Text: HI-SINCERITY Spec. No. : HJ200101 Issued Date : 2001.09.01 Revised Date : 2005.07.14 Page No. : 1/4 MICROELECTRONICS CORP. HSB857J PNP EPITAXIAL PLANAR TRANSISTOR Description Low frequency power amplifier. TO-252 Absolute Maximum Ratings TA=25°C • Maximum Temperatures


    Original     		PDF HJ200101 HSB857J O-252 183oC 217oC 260oC HSB857J a5 marking

    TL 434

    Abstract: y1 marking code transistor HSB1386J
    Text: HI-SINCERITY Spec. No. : HJ200301 Issued Date : 2001.11.30 Revised Date : 2005.07.14 Page No. : 1/4 MICROELECTRONICS CORP. HSB1386J LOW FREQUENCY TRANSISTOR -20V, -4A Features • Low VCE(sat). VCE(sat)=-0.55V(Typ.) (IC/IB=-4A/-0.1A) • Excellent DC current gain characteristics.


    Original     		PDF HJ200301 HSB1386J O-252 183oC 217oC 260oC TL 434 y1 marking code transistor HSB1386J

    y1 marking code transistor

    Abstract: y2 marking HSB1386J HSD2118J TL 434 transistor y1 MARK Y1 Transistor marking Y1 transistor
    Text: HI-SINCERITY Spec. No. : HJ200205 Issued Date : 2002.04.01 Revised Date : 2005.07.14 Page No. : 1/5 MICROELECTRONICS CORP. HSD2118J LOW VCE sat TRANSISTOR (20V, 5A) Feature • Low VCE(sat), VCE(sat)=0.6V(Typ.)(IC=4A/IB=0.1A) • Excellent DC Current Gain Characteristic


    Original     		PDF HJ200205 HSD2118J HSB1386J O-252 183oC 217oC 260oC y1 marking code transistor y2 marking HSB1386J HSD2118J TL 434 transistor y1 MARK Y1 Transistor marking Y1 transistor

    Untitled

    Abstract: No abstract text available
    Text: Databook.fxp 1/13/99 2:09 PM Page iv iv 01/99 High-Reliability Process Flows I nterFET Corporation has served the military and industrial highreliability junction field effect transistor market since 1984. There are standard high-reliability processing options available on most


    Original     		PDF MIL-STD-883, MIL-S-19500 dev006 PB-TS-EL01 PB-FT-0000 QB-IN-GN04

    2N6706

    Abstract: 2N6705 2N6707 2N6711 2N6712 2N6713 2N6714 B445
    Text: -Tosar.- • ~~1 DIM A B C D E F F h - B —I C n < 3 2 1 MIN MAX 4,32 5,33 4,45 5,20 3,18 4,19 0,41 0,55 0,35 0,50 0,55 1,14 1,40 2,54 12,70 5 D EG G H K L ALL DIMENSIONS ARE IN M.M. y1 PIN CONFIGURATION AVAILABLE IN TO-237 3 CDIL Code Style PIN 1 TO-237


    OCR Scan     		PDF O-237 O-237 O-237-1 O-237-2 O-237-1 2N6706 2N6705 2N6707 2N6711 2N6712 2N6713 2N6714 B445

    Untitled

    Abstract: No abstract text available
    Text: H m « n i c i v i r u s jr » e m progress sy i i t i f f 140 C o m m e rc e D rive M o n tg o m eryviile , PA 1833 6-10 13 ~ T e j ; | 1 5 6 3 y1 _9 8 4 0 S D « 1 0 1 9 RF & MICROWAVE TRANSISTORS 108.152MHz APPLICATIONS * C U S S C T R A N S ÌS T O R


    OCR Scan     		PDF 152MHz 13SMH2 SP1Q19 SD1019 C8150PFUNELCO 22GpP SD1Q19