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    Y94 5 Search Results

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    Y94 5 Price and Stock

    Mini-Circuits EQY-9-453-

    RF FILTER 8.9DB 6TDFN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey EQY-9-453- Cut Tape 692 1
    • 1 $38.02
    • 10 $38.02
    • 100 $31.3321
    • 1000 $29.46015
    • 10000 $29.46015
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    EQY-9-453- Reel 2,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $26.02817
    Buy Now
    EQY-9-453- Digi-Reel 1
    • 1 $38.02
    • 10 $38.02
    • 100 $31.3321
    • 1000 $29.46015
    • 10000 $29.46015
    Buy Now

    Mini-Circuits EQY-9-453+

    Equalizers MMIC EQUALIZER
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics EQY-9-453+ 1,408
    • 1 $36.66
    • 10 $35.41
    • 100 $31.33
    • 1000 $29.46
    • 10000 $29.46
    Buy Now

    Amphenol Corporation 97-3102A12S-3SY-946

    Circular MIL Spec Connector AB 2C 2#16S SKT RECP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 97-3102A12S-3SY-946 44
    • 1 $9.97
    • 10 $9.95
    • 100 $9.67
    • 1000 $9.66
    • 10000 $9.66
    Buy Now

    Cree, Inc. CXA1304-0000-000C0Y9435H

    High Power LEDs - White White 3500 K 93-CRI, XLamp CXA1304-9V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics CXA1304-0000-000C0Y9435H 37
    • 1 $2.84
    • 10 $2.69
    • 100 $2.41
    • 1000 $1.89
    • 10000 $1.89
    Buy Now

    Cree, Inc. CXA1304-0000-000C0Y9435F

    High Power LEDs - White White 3500 K 93-CRI, XLamp CXA1304-9V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics CXA1304-0000-000C0Y9435F 16
    • 1 $3.06
    • 10 $2.9
    • 100 $2.6
    • 1000 $2.04
    • 10000 $2.04
    Buy Now

    Y94 5 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    injection moulding machine plc controlled system

    Abstract: relay safety telemecanique telemecanique safety relays telemecanique emergency stop relay relays telemecanique xps-mp XPSMP telemecanique hand switch telemecanique telemecanique emergency stop button
    Text: Telemecanique XPS-MP 43 53 13 2374 Y84 Y94 2 I Y + 2 Y C C1 I 1 C3 I 3 A1 2 4 A 4 I I6 C6 I 5 C5 64 63 54 34 44 33 24 14 Module de sécurité pour deux fonctions de sécurité indépendantes Safety Controller for two independent safety functions Safety-Controller für zwei


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    PDF 1800VA/180VA) EN954-1 injection moulding machine plc controlled system relay safety telemecanique telemecanique safety relays telemecanique emergency stop relay relays telemecanique xps-mp XPSMP telemecanique hand switch telemecanique telemecanique emergency stop button

    Telemecanique XPS

    Abstract: XPS AF HX-JE Telemecanique injection moulding machine plc controlled system circuit diagram of keypad door lock system TP 3212 IEC 60947-5-1 Telemecanique magnetic telemecanique safety relays
    Text: Telemecanique XPS-MP Farnell Codes: 4275901 43 53 13 2374 Y84 Y94 2 I Y + 2 Y C C1 I 1 C3 I 3 A1 2 4 A 4 I I6 C6 I 5 C5 64 63 54 34 44 33 24 14 Module de sécurité pour deux fonctions de sécurité indépendantes Safety Controller for two independent safety functions


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    PDF EN954-1 Telemecanique XPS XPS AF HX-JE Telemecanique injection moulding machine plc controlled system circuit diagram of keypad door lock system TP 3212 IEC 60947-5-1 Telemecanique magnetic telemecanique safety relays

    SR130DD00

    Abstract: No abstract text available
    Text: Safety Monitoring Relays SR130DD SR130DD For full product information, visit www.sti.com. Use the SpeedSpec Code for quick access to the specific web page. Dual-Channel Dual-Device Safety Monitoring Relay • Power requirements—the SR130DD will accept 24 VDC


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    PDF SR130DD SR130DD SR130DD00 SR130DD00

    telemecanique XCS-E

    Abstract: Telemecanique XPS Preventa xps-ac XPSAT5110 XPSAF5130 xpsav11113 XPS-AT3410 telemecanique xps-ak XPS-AC XPSAC5121P
    Text: Machine Safeguarding Products PREVENTA XPS Safety Relays Supplement Catalog 03 File 9007 CONTENTS Description Page Selection Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-10 General Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11-12


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    PDF 1-888-SquareD 9007CT0203 telemecanique XCS-E Telemecanique XPS Preventa xps-ac XPSAT5110 XPSAF5130 xpsav11113 XPS-AT3410 telemecanique xps-ak XPS-AC XPSAC5121P

    Untitled

    Abstract: No abstract text available
    Text: Safety Monitoring Relays SR230DD SR230DD For full product information, visit www.sti.com. Use the SpeedSpec Code for quick access to the specific web page. Dual-Channel Dual-Device Safety Monitoring Relay • Power requirements—the SR230DD will accept 24 VDC


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    PDF SR230DD SR230DD SR230DD00

    Photo sensitive diode

    Abstract: PIC96601 KHP2032 KSM-50X PIC79603 PIC95603 PIC96337 kodenshi
    Text: ñW¡M vu RoHS Automotive solution m ÊÊÊ wtm ¥ / y rL 3 V 0 SISH0 | For solar radiation light detection For wireless control of car navigation equiment = l> 7 * Y94*- \ HP5F Infrared receiver module Silicon photo diode with transparent molding resin HP5F


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    PDF PIC79603 PIC95603 KSM-50X* KSM-55D2M KHP2032* PIC96601 K0E1007* PIC96337 PIC9623G Photo sensitive diode KHP2032 KSM-50X PIC96337 kodenshi

    Untitled

    Abstract: No abstract text available
    Text: ESAD25M C,N,D <i5A> ¡ a a g g it » f'f = t - K FAST RECOVERY DIODE • Features >W y # I t A' MUR £ t l f t 7 J l ^ - Y94 Insulated package by fully molding. High voltage by mesa design. ►S S i f S t t High reliability ìé m m C onnection D iagram


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    PDF ESAD25M ESAD25M-DDC ESAD25M-DDN ESAD25M-DDD

    Untitled

    Abstract: No abstract text available
    Text: T H I S DRAWING C R E L E A S E D FOR P U B L I C A T I O N 15 U N P U B L IS H E D . CO PYRIGHT 19 BY AMP INCORPORATED. AMP 1 4 7 1 - 9 REV 09MA Y94 i 1 1 -MA Y-0 1 10:53:00 amp36051 /home/amp36051/edmmod AL L R IG H T S R E S E R V E D . ,19 n 2 LOC AA


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    PDF amp36051 /home/amp36051/edmmod NLE55

    Untitled

    Abstract: No abstract text available
    Text: 4 T H I S DRAWING C 3 R E L E A S E D FOR P U B L I C A T I O N 15 U N P U B L IS H E D . CO PYRIGHT 19 BY AMP INCORPORATED. ,19 AL L R IG H T S R E S E R V E D . D C 4 .88 [ . 192] 17.53 [ .690] -1 2 .58 [.495] A I 13- M A R —01 AMP 1 4 7 1 - 9 REV 09MA Y94


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    PDF 09MAY94 13-MAR-01 amp36051 /honie/amp36051 0U1C-0040-01 09MAR01

    Untitled

    Abstract: No abstract text available
    Text: r 4 T H I S DRAWING T 3 R E L E A S E D FOR P U B L I C A T I O N 15 U N P U B L IS H E D . CO PYRIGHT 19 BY AMP INCORPORATED. AL L R IG H T S R E S E R V E D . QUANTITY AMP 1 4 7 1 - 9 REV 09MA Y94 i 1 1 -MA Y-0 1 10:38:29 amp36051 /home/amp36051/edmmod


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    PDF amp36051 /home/amp36051/edmmod NLE55

    6-229912-7

    Abstract: 1-229912-1 229912-1 229912-4
    Text: 4 T H I S DRAWING C 3 R E L E A S E D FOR P U B L I C A T I O N 15 U N P U B L IS H E D . CO PYRIGHT BY AMP INCORPORATED. 19 C Q D C 4-40 2 0NC-2B HOLES A AMP 1 4 7 1 - 9 REV 09MA Y94 i 09-MAR-01 1 7 :0 7:2 7 amp36051 /home/amp36051/edmmod ,19 AL L R IG H T S R E S E R V E D .


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    PDF 09may94 09-MAR-01 amp36051 /honie/amp36051 09MAR0' 6-229912-7 1-229912-1 229912-1 229912-4

    MMIC marking code S2

    Abstract: SIEMENS MMIC powaramp ta CGY94 Q68000-A9124 CGY so SMD F09
    Text: SIEMENS GaAs MMIC CGY94 Preliminary Datasheet * Power amplifier for G SM or A M PS application * Fully integrated 2 stage amplifier * Operating voltage range: 2.7 to 6 V ' 2 W output power at 3.6 V * Overall power added efficiency 46 % * Input matched to 50 £î, simple output match


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    PDF CGY94 Q68000-A9124 577ms 235bD5 MMIC marking code S2 SIEMENS MMIC powaramp ta CGY so SMD F09

    FT-63

    Abstract: No abstract text available
    Text: 'HYUNDAI H Y 5 1 V 4 8 1 0 B 5 1 2 K X 8- b lt C M O S DRAM w it h S e r ie s W r tte - P e r - B it PRELIMINARY DESCRIPTION The HY51V4810B is the new generation and fast dynamic RAM organized 524,288 x 8-bits. The HY51V4810B utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


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    PDF HY51V4810B p51V4810B 1AC20-00-MAYM HY51V4810BJC HY51V4810BSUC HY51V4810BTC FT-63

    Untitled

    Abstract: No abstract text available
    Text: ><M y i l u n fi i H Y 5 1 V 4 4 1 O B S e r ie s 1M x 4-bit CMOS DRAM with Write-Per-Bit PREUMINARY DESCRIPTION The HY51V4410B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit with function of Write-Per-Bit. The HY51V4410B utilizes Hyundai's CMOS silicon gate process technology as well as advanced


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    PDF HY51V4410B 1AC14-00-MA HY51V4410BJ HY51V4410BU HY51V4410BSU HY51V441OBT HY51V4410BLT

    Untitled

    Abstract: No abstract text available
    Text: HYUNDAI H Y 5 1 V 1 7 4 0 0 A S e r ie s 4M X 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V17400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V17400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


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    PDF HY51V17400A HY51V17400A 1AD35-00-MA 4b750flà HY51V17400AJ HY51V17400ASU HY51V17400AT HY51V17400ASLT

    HY531000S

    Abstract: No abstract text available
    Text: H Y 5 3 1 0 0 0 S e r ie s IM X 1-bit CMOS DRAM "H Y U N D A I DESCRIPTION The HY531000 is the new generation and fast dynamic RAM organized 1,048,576 x 1-bit. The HY531000 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


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    PDF HY531000 300mil 1AB04-30-MAY94 4b750flà HY531000S HY531000J 1AB04-30-MAŠHY531000S

    4410b

    Abstract: IC 4410B
    Text: "HYUNDAI H Y 5 1 V 4 4 1 0 B S e r ie s 1M x 4-bit CMOS DRAM with Write-Per-Bit PRELIMINARY DESCRIPTION The HY51V4410B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit with function of Write-Per-Bit. The HY51V4410B utilizes Hyundai's CMOS silicon gate process technology as well as advanced


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    PDF HY51V4410B 1AC14-00-M HY51V4410BJ HY51V4410BU HY51V4410BSU HY51V4410BT HY51V4410BLT 4410b IC 4410B

    2-767004-2

    Abstract: No abstract text available
    Text: 7 TH 5 DRAWING CO PY R IG H T IS U N P U B L IS H E D . 19 RELEASED BY AMP IN CO RP O RA TE D. ALL FOR RI C PUBLICATION HTS 6 4 5 2 3 ,1 9 DI ST LOC R ES ER V ED . AD REVISIONS 47 DESCRIPTION AB •POSI TI ON #1 REVISED P ER I35EP02 DK5 DRD 0512-0258-02


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    PDF 35EP02 60SSES 7-2S-97 1710B-360E 09MAY94 13-5EP-02 aoip26463 /home/amp26463/dmmod/u 2-767004-2

    Untitled

    Abstract: No abstract text available
    Text: 7 TH 5 DRAWING CO PY R IG H T IS U N P U B L IS H E D . 19 RELEASED BY AMP IN CO RP O RA TE D. ALL FOR RI C PUBLICATION HTS 6 4 5 2 3 ,1 9 DI ST LOC R ES ER V ED . AD REVISIONS 47 DESCRIPTION AA •POSI TI ON #1 REVISED P ER EC 0S1B-0020-01 DD 0 9 J UL 0


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    PDF 0S1B-0020-01 18-JUL-97 /home/ssrvl72a/dsk01/dept3621/ampi 2439/drawinas/mictor

    OQ0005

    Abstract: No abstract text available
    Text: •HYUNDAI H Y 5 1 V 4 8 0 0 B S e r ie s 512Kx8-blt C M O S DRAM PRELIMINARY DESCRIPTION The HY51V4800B is the new generation and fast dynamic RAM organized 524,288 x 8-bits. The HY51V4800B utilizes Hyundai's C M O S silicon gate process technology as well as advanced circuit techniques to provide wide


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    PDF 512Kx8-blt HY51V4800B 400mil 28pin 1AC18-00-MAY94 OQ0005

    cs40

    Abstract: No abstract text available
    Text: •HYUNDAI H Y 5 1 4 4 1 0 A S e r íe s 1M X 4-bit CMOS DRAM with Wrlte-Per-Blt DESCRIPTION The HY514410A is the 2nd generation and fast dynamic RAM organized 1,048,576 x 4-bit with function of Write-Per-Bit. Tine HY514410A utilizes Hyundai’s CM O S silicon gate process technology as well as advanced


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    PDF HY514410A 1AC06-20-MAY94 HY514410AJ HY514410AU HY514410AT HY514410ALT HY514410AR cs40

    HY514100J70

    Abstract: HY514100J PSIM 9
    Text: • H Y U N D A I HY514100 Series 4M X 1 -bit CMOS DRAM DESCRIPTION The HY514100 is the new generation and fast dynamic RAM organized 4,194,304 x 1-bit. The HY514100 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


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    PDF HY514100 1AC01-204IA 1AC01-20-MAY94 679tV17 1AC01 HY514100J70 HY514100J PSIM 9

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI H Y 5 1 V 4 3 7 0 B S e r ie s 256K* 16-bit CMOS DRAM with 2 WE & WPB PRELIMINARY DESCRIPTION The HY51V4370B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve


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    PDF 16-bit HY51V4370B 400mil 40pin 40/44pin 1AC24-00-MA DDD27M

    Untitled

    Abstract: No abstract text available
    Text: 7 TH 5 DRAWING C O PY R IG H T IS U N P U B L IS H E D . 19 RELEASED BY AMP IN CO RP O RA TE D. ALL FOR RI C PUBLICATION HTS 6 4 5 3 2 ,19 DI ST LOC R ES ER V ED . AD REVISIONS 47 DESCRIPTION Y •POSI TI ON #1 REVISED P ER EC 0G22-0025-99 SS 4- 26-99 INDICATOR


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    PDF 0G22-0025-99 C17510. 18-JUL-97 /home/ssrvl72a/dsk01/dept3621/ampi 2439/drawinas/mictor