YG861S15R
Abstract: No abstract text available
Text: YG861S15R 5A High Voltage Schottky barrier diode (150V / 5A ) [0401] Outline drawings, mm 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 15±0.3 2.7±0.2 1 2 1.2±0.2 13Min 3.7±0.2 Characteristics YG861S15R Units Condition VRRM 150 V VF 0.90 V Tc=25°C Tc=25
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YG861S15R
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YG861S15R
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Untitled
Abstract: No abstract text available
Text: http://www.fujisemi.com YG869C06R FUJI Diode Schottky Barrier Diode Maximum Rating and Characteristics Maximum ratings at Ta=25˚C unless otherwise specified. Item Symbols Repetitive peak reverse voltage VRRM Isolating voltage Viso Average output current
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YG869C06R
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10A Schottky
Abstract: No abstract text available
Text: YG862C04R 45V / 10A [200509] Outline drawings, mm Low IR Schottky barrier diode Features Low IR Low VF Center tap connection Applications High frequency operation DC-DC converters AC adapter Package : TO-220F Epoxy resin UL : V-0 Connection diagram 1 2 3
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YG862C04R
O-220F
10A Schottky
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yg862c06
Abstract: 10A Schottky
Text: YG862C06R 60V / 10A [200509] Outline drawings, mm Low IR Schottky barrier diode Features Low IR Low VF Center tap connection Applications High frequency operation DC-DC converters AC adapter Package : TO-220F Epoxy resin UL : V-0 Connection diagram 1 2 3
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YG862C06R
O-220F
yg862c06
10A Schottky
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YG865C04
Abstract: YG865C04R SCHOTTKY 20A 40V
Text: YG865C04R 45V / 20A [200509] Outline drawings, mm Low IR Schottky barrier diode Features Low IR Low VF Center tap connection Applications High frequency operation DC-DC converters AC adapter Package : TO-220F Epoxy resin UL : V-0 Connection diagram 1 2 3
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YG865C04R
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YG865C04
YG865C04R
SCHOTTKY 20A 40V
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Untitled
Abstract: No abstract text available
Text: http://www.fujisemi.com YG864S06R FUJI Diode Schottky Barrier Diode Maximum Rating and Characteristics Maximum ratings at Ta=25˚C unless otherwise specified. Item Symbols Conditions Repetitive peak reverse voltage VRRM Isolating voltage Viso Terminals-to-case, AC.1min
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YG864S06R
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yg869c
Abstract: No abstract text available
Text: http://www.fujisemi.com YG869C12R FUJI Diode Schottky Barrier Diode Maximum Rating and Characteristics Maximum ratings at Ta=25˚C unless otherwise specified. Item Symbols Repetitive peak reverse voltage Average output current Non-repetitive forward surge current*
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YG869C12R
yg869c
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YG869C10R
Abstract: No abstract text available
Text: http://www.fujisemi.com YG869C10R FUJI Diode Schottky Barrier Diode Maximum Rating and Characteristics Maximum ratings at Ta=25˚C unless otherwise specified. Item Symbols Repetitive peak reverse voltage VRRM Isolating voltage Viso Average output current
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YG869C10R
YG869C10R
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yg862c10
Abstract: YG862C10R 10DC4 10A Schottky diode 100v 10a 100V10A
Text: YG862C10R 100V / 10A [200509] Outline drawings, mm Low IR Schottky barrier diode Features Low IR Low VF Center tap connection Applications High frequency operation DC-DC converters AC adapter Package : TO-220F Epoxy resin UL : V-0 Connection diagram 1 2
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YG862C10R
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yg862c10
YG862C10R
10DC4
10A Schottky
diode 100v 10a
100V10A
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Untitled
Abstract: No abstract text available
Text: http://www.fujisemi.com YG862C08R FUJI Diode Schottky Barrier Diode Maximum Rating and Characteristics Maximum ratings at Ta=25˚C unless otherwise specified. Item Symbols Repetitive peak reverse voltage VRRM Isolating voltage Viso Average output current
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YG862C08R
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YG862C12R
Abstract: No abstract text available
Text: YG862C12R 10A (120V / 10A ) [0401] High Voltage Schottky barrier diode Outline drawings, mm 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 Major characteristics 10 A 2 3 1.2±0.2 +0.2 -0 0.7±0.2 0.6 2.54±0.2 2.7±0.2 Applications Features Low VF High Voltage Center tap connection
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YG862C12R
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YG862C12R
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YG868C15R
Abstract: MAX2040
Text: YG868C15R 30A (150V / 30A ) [0401] High Voltage Schottky barrier diode Outline drawings, mm 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 Major characteristics IO V V 30 A Features Low VF High Voltage Center tap connection 1 Tc=25°C MAX. 2 3 1.2±0.2 13Min 150 0.90
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YG868C15R
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YG868C15R
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MAX2040
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YG868C12R
Abstract: No abstract text available
Text: YG868C12R 30A (120V / 30A ) [0401] High Voltage Schottky barrier diode Outline drawings, mm 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 Major characteristics IO V V 30 A Features Low VF High Voltage Center tap connection 1 Tc=25°C MAX. 2 3 1.2±0.2 13Min 120 0.88
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YG868C12R
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YG868C12R
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yg862c15
Abstract: YG862C15R
Text: YG862C15R 10A (150V / 10A ) [0401] High Voltage Schottky barrier diode Outline drawings, mm 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 Major characteristics IO V V 10 A Features Low VF High Voltage Center tap connection 1 Tc=25°C MAX. 2 3 1.2±0.2 13Min 150 0.90
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YG862C15R
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YG862C15R
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yg862c15
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Untitled
Abstract: No abstract text available
Text: http://www.fujisemi.com YG869C04R FUJI Diode Schottky Barrier Diode Maximum Rating and Characteristics Maximum ratings at Ta=25˚C unless otherwise specified. Item Symbols Repetitive peak reverse voltage VRRM Isolating voltage Viso Average output current
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YG869C04R
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YA868C15
Abstract: ya868c12 YG972S6 yg862c15 yg865c15 YG862C15R YG975C6R YA865C12R yg971s6 YG862C12R
Text: 整流ダイオード / Rectifier Diodes • 高耐圧ショットキーバリアダイオード High Voltage Schottky-Barrier Diodes（SBD） デュアル 2 in one-package 形 式 Device type YA862C12R YG862C12R TS862C12R YA865C12R YG865C12R TS865C12R
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O220AB
O220F
YA971S6R
YG971S6R
YA972S6R
YG972S6R
YA868C15
ya868c12
YG972S6
yg862c15
yg865c15
YG862C15R
YG975C6R
YA865C12R
yg971s6
YG862C12R
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YG865C12R
Abstract: 120V DC to DC Converter 10A YG865C12
Text: YG865C12R 20A (120V / 20A ) [0401] High Voltage Schottky barrier diode Outline drawings, mm 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 Major characteristics IO V V 20 A Features Low VF High Voltage Center tap connection 1 Tc=25°C MAX. 2 3 1.2±0.2 13Min 120 0.88
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YG865C12R
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YG865C12R
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120V DC to DC Converter 10A
YG865C12
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Untitled
Abstract: No abstract text available
Text: http://www.fujisemi.com YG869C08R FUJI Diode Schottky Barrier Diode Maximum Rating and Characteristics Maximum ratings at Ta=25˚C unless otherwise specified. Item Symbols Repetitive peak reverse voltage VRRM Isolating voltage Viso Average output current
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YG869C08R
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YG868C04
Abstract: No abstract text available
Text: YG868C04R 45V / 30A [200509] Outline drawings, mm Low IR Schottky barrier diode Features Low IR Low VF Center tap connection Applications High frequency operation DC-DC converters AC adapter Package : TO-220F Epoxy resin UL : V-0 Connection diagram 1 2 3
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YG868C04R
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YG868C04
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YG861S12R
Abstract: No abstract text available
Text: YG861S12R 5A High Voltage Schottky barrier diode (120V / 5A ) [0401] Outline drawings, mm 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 15±0.3 2.7±0.2 1 2 1.2±0.2 13Min 3.7±0.2 Characteristics YG861S12R Units Condition VRRM 120 V VF 0.88 V Tc=25°C Tc=25
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YG861S12R
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YG861S12R
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yg865c06
Abstract: yg865c06r SQUARE WAVE TO SINE WAVE
Text: YG865C06R 60V / 20A [200509] Outline drawings, mm Low IR Schottky barrier diode Features Low IR Low VF Center tap connection Applications High frequency operation DC-DC converters AC adapter Package : TO-220F Epoxy resin UL : V-0 Connection diagram 1 2 3
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YG865C06R
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yg865c06
yg865c06r
SQUARE WAVE TO SINE WAVE
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YG861S15R
Abstract: No abstract text available
Text: YG861S15R 5A (150V / 5A ) [0401] High Voltage Schottky barrier diode Outline drawings, mm 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 Major characteristics V V 5 A IO 2 3 1.2±0.2 +0.2 -0 0.7±0.2 0.6 2.54±0.2 2.7±0.2 Applications Features Low VF High Voltage Center tap connection
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YG861S15R
13Min
YG861S15R
O-220F
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YG861S12
Abstract: YG861S12R
Text: YG861S12R 5A (120V / 5A ) [0401] High Voltage Schottky barrier diode Outline drawings, mm 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 Major characteristics V V 5 A IO 2 3 1.2±0.2 +0.2 -0 0.7±0.2 0.6 2.54±0.2 2.7±0.2 Applications Features Low VF High Voltage Center tap connection
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YG861S12R
13Min
YG861S12R
O-220F
YG861S12
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YG865C15R
Abstract: yg865c15
Text: YG865C15R 20A (150V / 20A ) [0401] High Voltage Schottky barrier diode Outline drawings, mm 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 Major characteristics IO V V 20 A Features Low VF High Voltage Center tap connection 1 Tc=25°C MAX. 2 3 1.2±0.2 13Min 150 0.90
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YG865C15R
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YG865C15R
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yg865c15
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