RGB666
Abstract: RGB565 MB87 YUV444 YUV422 BPP24 MB87*2120 RGB333 MB87J2120 MB87P2020
Text: Application programming Interface for C C-API Fujitsu Microelectronics Europe GmbH Am Siebenstein 6-10 63303 Dreieich-Buchschlag, Germany History Revision V1.0 V1.1 V1.2 Date 01.06.01 07.06.01 08.06.01 V1.3 09.07.01 Comment New Document Update midlevel functions
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Untitled
Abstract: No abstract text available
Text: • DISTINCTIVE CHARACTERISTICS * Single 5.0 V read, write and erase Minimizes system level power requirements * Compatible with JEDEC-standard commands Uses same software commands as E2PRO!\/ls a -ym 1 Compatible with JEDEC-standard byte-wide pinoutjm 32-pin PLCC Package suffix: PD
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32-pin
P9604
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ST CHN 510
Abstract: 83C97 chn 809 chn 809 ST
Text: 83C97 T e chn o log y, In co rp o rate d 10BASE-T Ethernet Transceiver With On Chip Filters and Digital Interface and Serial Port PRELIMINARY October 1994 SEEQ AutoDUPLEX Designation S ym bol indentifies product as A u to D U P L E X device. Description
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83C97
10BASE-T
83C97
10BASET)
ST CHN 510
chn 809
chn 809 ST
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94v0 c29
Abstract: IPC-SM-840 ipc sm 840 IPC-6011 IPC-SM-840 type b class 2 ipc 840 HSP50415EVAL1 IPC 6012 C7630 MD810
Text: A Ti • s' : " ï « U h - T ~ •• MD MD v n r~ c~> ceo ce s \S9 I M I 3Sfl SIO YM ss« I SM l l se a | iM I Mfl I itO ti3 Oì'J I 893 I l SM SM I 313 OM Y ò O - iiì\ I OSA | MO l [ ien teo I I 121 sta SE3 I I j't: UO SRT esi HT C30 2a • l a
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HSP50415EVAL1
bibr711-1
ibr73
bibr69
ipc-60111-6012.
BOARD-HSP50415EVAL1
94v0 c29
IPC-SM-840
ipc sm 840
IPC-6011
IPC-SM-840 type b class 2
ipc 840
IPC 6012
C7630
MD810
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HM5116405
Abstract: No abstract text available
Text: HM5116405 Series HM5117405 Series 4,194,304-word x 4-bit Dynamic Random Access Memory HITACHI ADE-203-633A Z Rev. 1.0 Oct. 14,1996 Description The Hitachi HM5116405 Series, HM5117405 Series are CMOS dynamic RAMs organized 4,194,304-word X 4-bit. They employ the most advanced CMOS technology for high performance and low power. The
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HM5116405
HM5117405
304-word
ADE-203-633A
26-pin
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BSX19 equivalent
Abstract: BC350 bc107 BFW63 bcw17 SHORT DATA ON 2N744 transistor BC287 2N3020 BC451 2N2868
Text: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX PRODUCT GUIDE SELECTION GUIDE CROSS REFERENCE HANDLING PRECAUTION QUALITY SURFACE MOUNTING CASE: SOT-23 DATASHEETS PACKAGES Page 4 5 7 9 14 24 25 30 35 419 INTRODUCTION This databook contains datasheets covering the range of discrete devices for small
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OT-23
BSX19 equivalent
BC350
bc107
BFW63
bcw17
SHORT DATA ON 2N744
transistor BC287
2N3020
BC451
2N2868
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YM 633
Abstract: 74HC10
Text: MO TO RO LA SC LOGIC MOTOROLA blE J> b3b7ESE MTI M0T4 • SEMICONDUCTOR TECHNICAL DATA MC54/74HC10 Triple 3-Inp u t N A N D Gate J SUFFIX CERAMIC CASE 632*08 High-Performance Silicon-Gate CM O S The MC54/74HC10 is identical in pinout to the LS10. The device inputs are com
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MC54/74HC10
YM 633
74HC10
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8002 1035
Abstract: IHb si DSC-8002 2764-2 27b4 ECL-10K IDT100494 IDT101494 IDT10494 ecl 10K sram 16 bit
Text: Data Book B, Section 5.4, Page 1 IDT10/100/101494 In te g ra te d D evice T echnology, In c. HIGH-SPEED BiCMOS ECL STATIC RAM 64K 16K x 4-BIT SRAM IDT10494 IDT100494 IDT101494 FEATURES: DESCRIPTION: • • • • • • • The IDT10494, IDT100494 and 101494 are 65,536-bit
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IDT10/100/101494
IDT10494
IDT100494
IDT101494
384-words
700mW
IDT10494,
536-bit
11V1U
8002 1035
IHb si
DSC-8002
2764-2
27b4
ECL-10K
IDT101494
ecl 10K sram 16 bit
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AN6330
Abstract: amplifier circuit panasonic an63
Text: AN6330 IC AN6330 V T R ^ * y K 7 'S ^ [ U S S / V T R Head A m p lifie r C ir c u it I ÍK S /D e sc rip tio n A N 6330 Ü , V T R <r>^ • ¡Nf U n i t I mm / KT > * f*E]S& -C-f c, 1<I r 2 <L Íü /F e a tu re s • AN 6 3 3 0 # L t i ' i t n I>12 J I>11
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AN6330
08max.
10//H
AN6330
amplifier circuit
panasonic an63
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S6364
Abstract: ROM 23128
Text: static CMOS &NMOS Familyof ROMs -> GOULD AMI > Sem iconductors Features General Description • 16K, 32K, 64K, 128K, 256K, 512K, 1M, 2M, 4M Selections • Fast Access Time • Mate With State-Of-The-Art 32 Bit Microprocessors • Low Standby Power CMOS • Fully Static Operation
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Untitled
Abstract: No abstract text available
Text: Prelim inary FUJITSU MOS Memories • M B 8 2 6 4 A - 1 2 - W , M B 8 2 6 4 A - 1 5 - W NMOS 65,536-Bit Dynamic Random Access Memory With Wide Temperature Range Description The MB8264A-W is a 64K x 1 dynamic RAM intended for operation over the case temperature range - 5 5 °C to 110°C. The part is also
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536-Bit
MB8264A-W
004pn
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Untitled
Abstract: No abstract text available
Text: Ù J Â T K I N S - JO H N S O N CO 73 D E § T b E lt .S 'i □ □ O t .T a i 3 T -S H ! 1 0 0 • 2 0 0 0 MHz THIN FILM SPST POWER SWITCH • LOW INSERTION LOSS: < 1.8 dB TYP. • HIGH CW INPUT POWER CAPABILITY: 2 WATTS • HIGH ISOLATION: > 4 0 dB (TYP.)
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ic sc 6200
Abstract: sc 6200 ic diagram sc 6200 ic sc 6200 circuit sc 6200 ic type tone control mono type with volume bass TDA 6600 TDA i2c tone volume tda stereo TDA6200
Text: S IE M E N S TV Stereo Tone Control IC with Quasi-Stereo Section, Channel 1/2 Switch, SCART Input, and I 2C Bus Control P re lim in a ry Data TDA 6200 B ip o la r IC Features • Treble, bass, balance, and volume control by means of an integrated digital-to-analog
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NEC 424400
Abstract: MPD424400LA
Text: DATA SHEET MOS INTEGRATED CIRCUIT M P D 4 2 4 4 0 0 -L 4 M-BIT DYNAMIC RAM 1 M-WORD BY 4-BIT, FAST PAGE MODE Description The /iPD424400-L is a 1,048,576 w ords by 4 bits dynam ic CMOS RAM. The fast page mode capability realize high speed access and low power consum ption.
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uPD424400-L
26-pin
/iPD424400-60L
IPD424400-70L
pPD424400-80L
/iPD424400-10L
PP424400-L
IR35-207-2
VP15-207-2
NEC 424400
MPD424400LA
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BUK856-450IX
Abstract: zener diode f7 T0220AB BUK856 transistor r 606 j
Text: N AUER P H I L I P S / D I S C R E T E bTE D • bbSBiai 0030111 633 * A P X Philips _ Product Specification Insulated Gate Bipolar Transistor BUK856-450IX Protected IGBT _
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0D3CH11
BUK856-450IX
T0220AB
BUK856-450IX
zener diode f7
BUK856
transistor r 606 j
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epson ea-d
Abstract: No abstract text available
Text: EPSON P F 28 2-07 SED1278F/D Dot Matrix LCD Controller Driver • 1/8,1/11 or 1/16 Duty Dot Matrix Drive • Built-in Character Generator ROM and RAM RAM 248charactIre • Maximum Simultaneous Display of 80 Characters (With extension LCD driver) • DESCRIPTION
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SED1278F/D
248charactIre)
SED1278F/D
SED1278DOA
SED1278F
SED1278Foc/Doc
epson ea-d
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A5 GNE mosfet
Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA
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1PHX11136Q-14
A5 GNE mosfet
jo3501
2N4427 equivalent bfr91
2N503
2N5160 MOTOROLA
BF431
BFR96
HY 1906 transistor
jo2015
kd 2060 transistor
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um5003
Abstract: UM500 UM5003D-01 melody chip circuit diagram for buzzer circuits
Text: UM5003D 3 Sec Voice Synthesizer with Serial/Random Trigger Features • ■ ■ ■ ■ Mask options for: — Voice data for words — Various w ord com binations for every section — Repeats up to 16 times — Mute intervals m aximum 5 sec. for every section
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UM5003D
UM5003D-05
5003D
UM5003D
14LDIP
um5003
UM500
UM5003D-01
melody chip
circuit diagram for buzzer circuits
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Untitled
Abstract: No abstract text available
Text: 1 ¿9 ft? prodtK-tn M ic r o s e m i 1 4 0 C o m m e r c e D r iv e M o n t g o m e r y v iiie , P A 1 8 9 3 6 -1 0 1 3 T e i: 2 1 5 8 3 1 -9 8 4 0 SD1500 RF & MICROWAVE TRANSISTORS L BAND RADAR APPLICATiONS « DES'-GNED FOR USE IN LONG PULSE Lb a n d a p p l ic a t io n ;-; UKE RADAR, JTtOS.
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SD1500
3D1S00
SD150Q
505/2CU5
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NPCT
Abstract: LD128 NPCT+411 NPCT 4
Text: im s L 'B ’S'-r ic s VCR M52062AFP S-VHS SYSTEM VCR CHROMA SIGNAL PROCESSOR DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M52062AFP processes VHS and S-VHS VCR color signals. This circuit consists of main and sub B.M.'s, burst-up/down switch, VCXO, 320-fh VCO, ACC, APC, AFC, killer circuit,
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M52062AFP
M52062AFP
320-fh
433619MHz
NPCT
LD128
NPCT+411
NPCT 4
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ATF-21100
Abstract: AT-8111 Avantek amplifier 8 12 GHz ATF-21100-GP1 AVANTEK transistor Avantek UA-152
Text: AVANTEK Q EOE D INC avan tek • llHllfab □ □ □ h S b G ATF-21100 AT-8111 0.5-6 GHz Low Noise Gallium Arsenide FET Features Avantek Chip Outline • • _483 p m _ • 7 Low Noise Figure: 0.9 dB typical at 4 GHz High Associated Gain: 13.0 dB typical
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ATF-21100
AT-8111)
ATF-21100
mi-172
AT-8111
Avantek amplifier 8 12 GHz
ATF-21100-GP1
AVANTEK transistor
Avantek UA-152
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BTS413A
Abstract: v6b* valves N 413 M
Text: f I BTS 413 A PROFET • • • • • • • • • • H igh-side switch S h o rt-c irc u it protection O vertem perature protection O verload protection Input protection O pen-load detection in o ff-co n d itio n Negative transien t voltage peak at inductive load lim ited to - 1 0 V
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C67078-A5307-A2
BTS413A
v6b* valves
N 413 M
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988U
Abstract: m1963m SDIP20 MHB106 control unit Philips 432 T
Text: IN TE G R A TE D CIRCUITS [ n lE E T TDA9880 Alignment-free multistandard vision and FM sound IF-PLL demodulator Preliminary specification File under Integrated Circuits, IC02 Philips Semiconductors 1998 Apr 16 PHILIPS PHILIPS Philips S e m ico nd uctors Prelim inary specification
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TDA9880
545104/00/01/pp40
988U
m1963m
SDIP20
MHB106
control unit Philips 432 T
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mv1401
Abstract: rn550
Text: MOTOROLA MV1401, MV I403, MV1404, MV1405, SEMICONDUCTOR TECHNICAL DATA H H H H Tuning Diodes H IG H T U N IN G R A T IO V O L T A G E -V A R IA B L E C A P A C IT A N C E D IO D E S SILICON HYPER-ABRUPT TUNING DIODES . . . designed w ith high capacitance and a capacitance change of
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MV1401,
MV1404,
MV1405,
mv1401
rn550
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