24C02 W6
Abstract: No abstract text available
Text: HB56UW1673EJN Series, HB56UW1665EJN Series 1 6 7 7 7 2 16-w ord x 72-bit H igh D en sity D yn am ic R A M M odule 1 6 7 7 7 2 16-w ord x 64-bit H igh D en sity D yn am ic R A M M odule HITACHI A D E -203-655 Z Preliminary Rev. 0.0 Sep. 9, 1996 D escrip tion
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HB56UW1673EJN
HB56UW1665EJN
72-bit
64-bit
HB56UNV1673EJN
64-Mbit
HM5165405AJ)
24C02)
24C02 W6
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Untitled
Abstract: No abstract text available
Text: IBM0325404 IBM0325804 IBM0325164 IBM03254B4 A dvanced 256M b S yn ch ro n o u s DRAM - Die R evision A Features • High Performance: •66, Í -260, Í -360, : -10, CL=3 Í CL=3 Í CL=3 : cl=3 ; Units : i fcK iCIock Frequency 147 ; 125 ; 125 ; lo o : MHz :
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IBM0325404
IBM0325804
IBM0325164
IBM03254B4
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2N6353
Abstract: 2n6351 RB1-E
Text: SÖE D TELED YN E COMPONENTS ö*il7bC15 üDQtiS42 t. T -3 3 -a 7 NPN POWER DARLINGTON 5AMP SWITCHING TRANSISTORS 2N6350 thru 2N6353 GEOMETRY 508 • KD5A • LowVCE Sat • High Gain TO-33 • Monolithic Construction MAXIMUM RATINGS SYMBOL 2N6350 2N6351 2N6352 2N6353 UNIT
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il7bC15
DQtiS42
2N6350
2N6353
100ohms
2N6351
2N6352
2N6353
10MHZ
RB1-E
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0364404CT3C
Abstract: 0364804CT3C 0364804CT3C-360 0364164PT3C-10
Text: I =¥= =• = IBM0364804 IBM0364164 IBM0364404 IBM03644B4 P relim inary 64M b S yn ch ro n o u s D RAM - Die R evision C Features • Programmable Wrap: Sequential or Interleave • High Performance: • Multiple Burst Read with Single Write Option -68, i -260, ! -360,
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IBM0364804
IBM0364164
IBM0364404
IBM03644B4
41-page
0364404CT3C
0364804CT3C
0364804CT3C-360
0364164PT3C-10
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Untitled
Abstract: No abstract text available
Text: Preliminary Spec. MITSUBISHI LSIs MH16V7245ATJ -5, -6 _ HYPER PAGE MODE 1207959552 - BIT 16777216 - WORD BY 72 - BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION T he M H 1 6V 7 245 A T J is 16 77 72 16-w ord x 7 2 -bit d yn a m ic ram
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MH16V7245ATJ
tim6777216
MIT-DS-0042-2
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Untitled
Abstract: No abstract text available
Text: Pre li mi n ar y Spec. MITSUBISHI LSIs MH16V7245BATJ -5, -6 _ HYPER PAGE MODE 1207959552 - BIT 16777216 - WORD BY 72 - BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION T he M H 1 6V 7 245 B A T J is 16 77 72 16-w ord x 7 2 -bit d yn am ic
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MH16V7245BATJ
MIT-DS-0277-0
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M H 1 S 7 2 C X J -1 0 ,-1 2 ,-1 5 75,497,472-B IT 1,048,576-W O R D BY 72-BIT Synchronous D YN AM IC RAM PRELIMINARY Some of contents are subject to change without notice. DESCRIPTION PIN CONFIGURATION The MH1S72CXJ is an 1 M word by 72-bit Synchronous
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472-B
72-BIT
MH1S72CXJ
72-bit
MH1S72CXJ-10
472-BIT
576-WORD
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KM44C1000C
Abstract: No abstract text available
Text: KM44C1OOOC/CL/CSL CMOS DRAM 1M x4B it CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C1000C/CUCSL is a high speed C M O S 1,0 4 8 ,5 7 6 x 4 D yn a m ic R and om A cce ss Memory. Its design is optimized for high performance
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KM44C1OOOC/CL/CSL
KM44C1000C/CUCSL
KM44C1000C/CL/CSL-5
KM44C1000C/CL/CSL-6
KM44C1000C/CL/CSL-7
130ns
KM44C1000C/CL/CSL-8
150ns
7TL4142
KM44C1000C
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Untitled
Abstract: No abstract text available
Text: - ¡-a,.— - - . . -^r- r P.-.- .» ^ y v o y a ir » ^ JT H M VTgy » > y * ¿1*M ‘g *-• » w i<4>»fcWW '• "► r w « m r « y .yn T - -' -.» ^n -,1u - ^ ¡T - . *• - •#••»«•. ._ fj».rr^ ' ^ ¡ . . T - ^ . ^ w . r P f « - , . . - . . . , : - , w - -,*r — :-
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STRM40ED
5557S3
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KMM377S2857AT2-GH
Abstract: KMM377S2857AT2-GL
Text: Preliminary KMM377S2857AT2 SDRAM MODULE K M M 377S2857AT2 SDRAM DIMM Intel 1.1 ver. Base 128M x72 SDR AM DIMM w ith PLL & R egister based on Stacked 128Mx4, 4B anks 8K Ref., 3.3V S D R A M s w ith SPD GENERAL DESCRIPTION FEATURE T he Sam sung KM M 377S2857AT2 is a 128M bit x 72 S yn
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KMM377S2857AT2
KMM377S2857AT2
128Mx4,
377S2857AT2
128Mx4
18-bits
24-pin
168-pin
0022uF
KMM377S2857AT2-GH
KMM377S2857AT2-GL
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L 0814
Abstract: MRF917T1
Text: M O TO R O LA O rder this docum ent from RF Marketing SEMICONDUCTOR TECHNICAL DATA The RF Small Signal Line MRF917T1 NPN Silicon High-Frequency Transistors D esigned fo r low n o ise , w ide d yn a m ic range fro n t end a m p lifie rs , at frequencies to 1.5 GHz. Specifically aimed at portable communication devices
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MRF917T1
MRF917T1/D
L 0814
MRF917T1
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-422000LAB72F 3.3 V OPERATION 2 M-WORD BY 72-BIT DYNAMIC RAM MODULE FAST PAGE MODE ECC Description The MC-422000LAB72F is a 2,097,152 w o rd s by 72 bits d yn a m ic RAM m o d u le on w h ic h 9 pieces o f 16 M DRAM: jUPD4217800L are assem bled.
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MC-422000LAB72F
72-BIT
MC-422000LAB72F
jUPD4217800L
M168S-50A8
b427525
00bl73Ã
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42S18160
Abstract: NEC 4216160
Text: M O S INTEGRATED CIRCU IT juPD42S16160,4216160,42S18160,4218160 16 M BIT DYNAM IC RAM 1 M-WORD BY 16-BIT, FA ST PAGE M ODE, B YTE REA D /W RITE M ODE DESCRIPTION T h e /IPD 42S16160, 4216160, 42S1816 0, 4218160 are 1 048 576 w o rd s b y 16 bits d yn a m ic C M O S R A M s.
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uPD42S16160
uPD4216160
uPD42S18160
uPD4218160
16-BIT,
42S16160,
42S1816
PD42S16160,
42S18160
50-pin
NEC 4216160
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Untitled
Abstract: No abstract text available
Text: Communication ICs DTMF receiver for telephones BU8871F The BU8871F is a DTMF receiver ICs developed for use in telephone answering machines, and converts 16 different typ e s o f DTM F sig nals into 4 -b it binary serial data. It fea tu res a w id e d yn a m ic range, e lim ina ting th e need fo r an
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BU8871F
BU8871F
19MHz
76Eflc
D02DflbS
BU8874
AB-8874)
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Untitled
Abstract: No abstract text available
Text: KMM372F800CK KMM372F81OCK DRAM MODULE KMM372F800CK / KMM372F810CK Fast Page with EDO Mode 8M X 72 DRAM DIMM with ECC using 4Mx4, 4K/2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES T h e S a m su n g K M M 372F 80 1 0C K is a 8 M x7 2 b its D yn a m ic • P art Ide ntifica tio n
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KMM372F800CK
KMM372F810CK
KMM372F81OCK
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M514400C
Abstract: M514400 m5144 HM514400C HM514400CL Hitachi Scans-001
Text: HM514400C/CL Series 1,048,576-word x 4-bit D yn am ic Random A c c e s s Memory HITACHI The H itachi H M 514400C is a CM OS dynam ic R A M o rg a n iz e d 1 ,0 4 8 ,5 7 6 -w ord x 4 -b it. HM 514400C has realized higher density, higher performance and various functions by employing
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HM514400C/CL
576-word
HM514400C
HM5I4400C
300-mil
26-pin
400-mil
M514400C
M514400
m5144
HM514400CL
Hitachi Scans-001
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msm82c51a-2rs
Abstract: MSM82C51 MSM82C51A
Text: OKI semiconductor MSM82C51A-2RS/GS/JS_ UNIVERSAL SYNCHRONOUS ASYNCHRONOUS RECEIVER TRANSMITTER GENERAL DESCRIPTION The M S M 8 2 C 5 1 A is a USART U niversal S yn ch ro n o u s A s y n c h ro n o u s Receiver T ra n s m itte r fo r serial data c o m m u n ic a tio n .
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MSM82C51A-2RS/GS/JS_
MSM82C51A
I/0-MSM82C51A-2RS/GS/JS
msm82c51a-2rs
MSM82C51
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4cmv
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT MC-454BA80 4M-W ORD BY 80-BIT SYNCHRONOUS DYNAMIC RAM MODULE BUFFERED TYPE Description The M C -4 54B A 80 is a 4 ,1 9 4 ,3 0 4 w o rd s by 80 b its syn ch ro n o u s d yn a m ic RAM m odule on w hich 20 p ie ce s of 16 M
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MC-454BA80
80-BIT
MC-454BA80
uPD4516421
4cmv
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CD4001A
Abstract: TP4301A rca to rca schematic PEG 122 plug-in replacement
Text: TYPES TF4301A. TP4301A QUAD 2-INPUT NOR BUFFERS CMOS LOGIC C IRCU ITS S E P T E M B E R 1475 Buffer C ircu it Designed to be Plug-In Replacem ent for R C A C D 4 0 0 1 A JO H N D U A L IN - L IN E P A C K A G E T O P V IE W Im proved S ta tic and D yn am ic Of*»
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TF4301A.
TP4301A
CD4001A
Ta-25Â
TF4301A
TP4301A
VDD-10V
rca to rca schematic
PEG 122
plug-in replacement
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516DA72 16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description T he M C -4 516 D A 7 2 is a 16 ,7 7 7 ,2 1 6 w o rd s by 72 bits syn ch ro n o u s d yn a m ic RAM m odule on w h ich 18 pieces o f 64M
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MC-4516DA72
72-BIT
uPD4564441
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Untitled
Abstract: No abstract text available
Text: m in airy S p e c . MITSUBISHI LSls MH2V72CZJ-6,-7 Some of contents are subject to change without notice. _FAST PAGE MODE 150994944-BIT 2097152-BIT BY 72-BIT DINAMIC RAM PIN CONFIGURATION DESCRIPTION T he M H 2 V 7 2 C Z J is 2 0 9 7 1 5 2 -w ord x 7 2 -b it d yn a m ic ram
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MH2V72CZJ-6
150994944-BIT
2097152-BIT
72-BIT)
16bits
A0/B0-A10
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PDF
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4500B AA
Abstract: No abstract text available
Text: 7. COMMON ELECTRICAL CHARACTERISTICS 7 -1 P o w e r D is s ip a tio n The power dissipation of CMOS device is com posed of two components: one static, the other dynam ic. The total power dissipation is the sum of static and d yn am ic power dissipation. Static power dissipation is obtained by m ultiplyin g quiescent supply current by the supply voltage
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CHARACTERISTICS-16
4500B AA
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Untitled
Abstract: No abstract text available
Text: Preliminary Spec. MITSUBISHI LSIs MH16V725BATJ -5, -6 _ HYPER PAGE MODE 1207959552 - BIT 16777216 - WORD BY 72 - BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION T he M H 1 6V 7 25B A T J is 16 777216-w o rd x 7 2 -bit d yn am ic ram m odule. T his co n sist o f eigh te en in du stry sta n d a rd 16M
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MH16V725BATJ
777216-w
MIT-DS-0271
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PDF
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM372V404BS KMM372V404BS Fast Page Mode 4M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4 , 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES T he S am sung K M M 37 2V 4 04 B is a 4 M x7 2 b its D yn am ic RAM Part Identification high d e n sity m em ory m odule. The S am sung K M M 37 2V 4 04 B
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KMM372V404BS
KMM372V404BS
4Mx16
168-pin
54Max)
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