HBPF-0420
Abstract: SOT343 C5 W04 transistor Transistor W06 transistor w04
Text: 1800 to 1900 MHz Amplifiers using the HBFP-0405 and HBFP-0420 Low Noise Silicon Bipolar Transistors Application Note 1160 Introduction Hewlett-Packard’s HBFP-0405 and HBFP-0420 are high performance isolated collector silicon bipolar transistors housed in 4-lead SC-70 SOT343 surface mount plastic packages. Both the HBFP-0405 and HBFP-0420
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HBFP-0405
HBFP-0420
SC-70
OT343)
HBPF-0420
SOT343 C5
W04 transistor
Transistor W06
transistor w04
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lambda alpha
Abstract: ATF-38143
Text: ATF-38143 Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package Data Sheet Description Features Avago Technologies’s ATF-38143 is a high dynamic range, low noise, PHEMT housed in a 4-lead SC-70 SOT343 surface mount plastic package. • Lead-free Option Available
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ATF-38143
SC-70
OT343)
OT-343
SC-70)
5989-3745EN
AV02-1443EN
lambda alpha
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ATF-38143
Abstract: A004R ATF-38143-TR1G
Text: ATF-38143 Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package Data Sheet Description Features Avago Technologies’s ATF-38143 is a high dynamic range, low noise, PHEMT housed in a 4-lead SC-70 SOT343 surface mount plastic package. • Lead-free Option Available
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ATF-38143
ATF-38143
SC-70
OT343)
OT-343
OT343
SC-70)
5989-3745EN
AV02-1443EN
A004R
ATF-38143-TR1G
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CL10B104KONC
Abstract: LL1608-FS18NJ MCR03*J102 SGA-8343 MCH185A100D MCR03*J102 resistor sige an-061 GETEK Z6 82 5.1 amplifier circuits
Text: Design Application Note - AN-044 SGA-8343 Amplifier Application Circuits Abstract Sirenza Microdevices’ SGA-8343 is a high performance SiGe amplifier designed for operation from DC to 6 GHz. This application note illustrates several application circuits for key frequency bands in the
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AN-044
SGA-8343
EAN-101847
CL10B104KONC
LL1608-FS18NJ
MCR03*J102
MCH185A100D
MCR03*J102 resistor
sige an-061
GETEK
Z6 82
5.1 amplifier circuits
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MCR03*J102
Abstract: CL10B104KONC MCR03*J102 resistor sige an-061 LL1608-FS39NJ SGA-8343 MCH185A2R2C AN-044
Text: Design Application Note - AN-061 SGA-8343 GPS Application Circuits Abstract Sirenza Microdevices’ SGA-8343 is a high performance SiGe amplifier designed for operation from DC to 6 GHz. This application note illustrates application circuits for GPS Global Positioning System frequency band (1575 MHz). The first application circuit
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AN-061
SGA-8343
EAN-103201
MCR03*J102
CL10B104KONC
MCR03*J102 resistor
sige an-061
LL1608-FS39NJ
MCH185A2R2C
AN-044
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SGA8343z
Abstract: SGA-8343Z CL10B104K MCR03*J100 MCR03J242 MCR03J620 MCR03J SOT343 lna ROHM TRACE CODE ROHM trace code of lot
Text: SGA8343Z SGA8343ZLow Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to
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SGA8343ZLow
SGA8343Z
OT-343
SGA8343Z
DS110620
SGA8343Z-EVB4
1575MHz
SGA-8343Z
CL10B104K
MCR03*J100
MCR03J242
MCR03J620
MCR03J
SOT343 lna
ROHM TRACE CODE
ROHM trace code of lot
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samsung bluetooth
Abstract: SGA8343Z SGA-8343 MCR03*J102 CL10B104KONC SGA-8343Z 8343
Text: SGA-8343 Z SGA-8343(Z) Low Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA-8343 is a high performance Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) designed for operation from DC to
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SGA-8343
OT-343
SGA8343ZPCK-EVB2
SGA8343ZPCK-EVB3
SGA8343ZPCK-EVB4
DS100111
samsung bluetooth
SGA8343Z
MCR03*J102
CL10B104KONC
SGA-8343Z
8343
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SGA-8343Z
Abstract: samsung cl SGA8343Z SOT343 lna MICROWAVE DEVICES GaAs pHEMT LOW SOT-343
Text: SGA8343Z SGA8343ZLow Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to
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SGA8343ZLow
SGA8343Z
OT-343
SGA8343Z
DS110205
SGA8343Z-EVB4
1575MHz
SGA-8343Z
samsung cl
SOT343 lna
MICROWAVE DEVICES
GaAs pHEMT LOW SOT-343
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Untitled
Abstract: No abstract text available
Text: SGA8343Z SGA8343ZLow Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to
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SGA8343Z
SGA8343ZLow
OT-343
SGA8343Z
DS110620
SGA8343Z-EVB4
1575MHz
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w06 transistor
Abstract: Transistor W06 W04 transistor w04 transistor sot 23 w02 transistor sot 71 transistor sot w04 HBFP-0420 W04 sot 23 W02 sot 23 W02 transistor
Text: 1800 to 1900 MHz Amplifiers using the HBFP-0405 and HBFP-0420 Low Noise Silicon Bipolar Transistors Application Note 1160 Introduction Avago Technologies’ HBFP-0405 and HBFP-0420 are high performance isolated collector silicon bipolar transistors housed in 4-lead SC-70 SOT-343 surface
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HBFP-0405
HBFP-0420
HBFP-0420
SC-70
OT-343)
HBFP0420
w06 transistor
Transistor W06
W04 transistor
w04 transistor sot 23
w02 transistor sot 71
transistor sot w04
W04 sot 23
W02 sot 23
W02 transistor
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SGA8343Z
Abstract: MCR03*J102 SGA8343ZSR SGA-8343Z EVB1 1608-FS3N9S lot code RFMD MCH185A150J MCR03J5R1 toko 10k series
Text: SGA8343Z SGA8343ZLow Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to
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SGA8343Z
SGA8343ZLow
OT-343
SGA8343Z
DS100909
SGA8343Z-EVB4
1575MHz
MCR03*J102
SGA8343ZSR
SGA-8343Z
EVB1
1608-FS3N9S
lot code RFMD
MCH185A150J
MCR03J5R1
toko 10k series
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MCR03J102
Abstract: MCR03*J102 MCH185A150J MCR03*J102 resistor SGA-8343 CL10B104KONC sga8343 samsung bluetooth sige an-061 sga8343z
Text: AN RFMD APPLICATION NOTE SGA-8343 GPS Application Circuits RFMD Worldwide Applications Design Application Note - AN-061 Abstract RFMD’s SGA-8343 is a high performance SiGe amplifier designed for operation from DC to 6GHz. This application note illustrates application circuits for GPS Global Positioning System frequency band (1575MHz). The first application circuit is optimized for noise performance; the second one is optimized for input return loss. Introduction The application circuits were
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SGA-8343
AN-061
1575MHz)
MCR03J102
MCR03*J102
MCH185A150J
MCR03*J102 resistor
CL10B104KONC
sga8343
samsung bluetooth
sige an-061
sga8343z
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bipolar transistor ghz s-parameter
Abstract: 1565E HBFP-0450 LL2012-F 5e19 bipolar transistor s-parameter COND10
Text: 1800 MHz Medium Power Amplifier using the HBFP-0450 Silicon Bipolar Transistor Application Note 1168 Introduction HBFP-0450 Medium Power Amplifier Design Avago Technologies’ HBFP-0450 is a high performance, medium power Isolated Collector transistor housed in
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HBFP-0450
HBFP-0450
OT-343
SC-70)
031-inch
59257503E-13
292E-1
bipolar transistor ghz s-parameter
1565E
LL2012-F
5e19
bipolar transistor s-parameter
COND10
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RF Transistor s-parameter
Abstract: HBFP-0450 ADS MODEL HBFP0450
Text: 1800 MHz Medium Power Amplifier using the HBFP-0450 Silicon Bipolar Transistor Application Note 1168 Introduction Hewlett-Packard’s HBFP-0450 is a high performance, medium power Isolated Collector transistor housed in a 4-lead SOT-343 SC-70 surface mount package. Described as a high performance, medium
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HBFP-0450
OT-343
SC-70)
031-inch
5968-2788E
RF Transistor s-parameter
HBFP-0450 ADS MODEL
HBFP0450
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ATF-38143
Abstract: No abstract text available
Text: ATF-38143 Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package Data Sheet Features • Lead-free Option Available • Low Noise Figure Agilent Technologies’s ATF-38143 is a high dynamic range, low noise, PHEMT housed in a 4-lead SC-70 SOT-343 surface mount
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ATF-38143
SC-70
OT-343)
OT-343
SC-70)
5989-1914EN
5989-3745EN
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ATF-38143
Abstract: A004R ATF-38143-BLK ATF-38143-TR1 ATF-38143-TR2
Text: ATF-38143 Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package Data Sheet Description Features Avago Technologies’s ATF-38143 is a high dynamic range, low noise, PHEMT housed in a 4-lead SC-70 SOT-343 surface mount plastic package. • Lead-free Option Available
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ATF-38143
ATF-38143
SC-70
OT-343)
OT-343
SC-70)
5989-1914EN
5989-3745EN
A004R
ATF-38143-BLK
ATF-38143-TR1
ATF-38143-TR2
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marking code 916 SOT343
Abstract: ATF-38143
Text: Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package Technical Data ATF-38143 Features • Lead-free Option Available Surface Mount Package SOT-343 • Low Noise Figure • Excellent Uniformity in Product Specifications • Low Cost Surface Mount
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ATF-38143
OT-343
SC-70)
ATF-38143
SC-70
OT-343)
5968-7868E
5989-1914EN
marking code 916 SOT343
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lna marking code vp
Abstract: No abstract text available
Text: Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package Technical Data ATF-33143 Features • Low Noise Figure Surface Mount Package SOT-343 • Excellent Uniformity in Product Specifications • 1600 micron Gate Width • Low Cost Surface Mount Small Plastic Package
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ATF-33143
OT-343
SC-70)
ATF-33143
SC-70
OT-343)
5968-7454E
5988-4211EN
lna marking code vp
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ATF-38143
Abstract: ATF-38143-BLK ATF-38143-TR1 ATF-38143-TR2 k5 z2 Cgd01 D 1709 N 20
Text: Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package Technical Data ATF-38143 Features • Low Noise Figure Surface Mount Package SOT-343 • Excellent Uniformity in Product Specifications • Low Cost Surface Mount Small Plastic Package SOT-343 4 lead SC-70
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ATF-38143
OT-343
SC-70)
5968-7868E
ATF-38143
ATF-38143-BLK
ATF-38143-TR1
ATF-38143-TR2
k5 z2
Cgd01
D 1709 N 20
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r 2501 kk 106
Abstract: r 2501 kk 135 r 2501 kk 250 mds 9651 r 2501 kk 111 kk 038 2501 hp 3586
Text: Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package Technical Data ATF-33143 Features • Low Noise Figure Surface Mount Package SOT-343 • Excellent Uniformity in Product Specifications • Low Cost Surface Mount Small Plastic Package SOT-343 4 lead SC-70
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ATF-33143
OT-343
SC-70)
ATF-33143
SC-70
OT-343)
r 2501 kk 106
r 2501 kk 135
r 2501 kk 250
mds 9651
r 2501 kk 111
kk 038 2501
hp 3586
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smd diode J476
Abstract: VIPER L2A RoHS Viper L2A mmic amplifier marking code N10 mosfet j279 MRF 966 Mesfet PIN diode MACOM SPICE model NCR 2400 SMA DATASHEET Datasheet MRF 899 smd wb3
Text: Device Data Library WIRELESS RF PRODUCT DEVICE DATA DL110/D Rev. 14 2/2003 wireless Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii
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DL110/D
smd diode J476
VIPER L2A RoHS
Viper L2A
mmic amplifier marking code N10
mosfet j279
MRF 966 Mesfet
PIN diode MACOM SPICE model
NCR 2400 SMA DATASHEET Datasheet
MRF 899
smd wb3
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C3330 transistor
Abstract: No abstract text available
Text: MSA-2743 Cascadable Silicon Bipolar Gain Block MMIC Amplifier Data Sheet Description Features Avago Technologies’ MSA-2743 is a low current silicon gain block MMIC amplifier housed in a 4-lead SC-70 SOT-343 surface mount plastic package. • Small signal gain amplifier
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MSA-2743
MSA-2743
SC-70
OT-343)
OT-343/4-lead
5989-4221EN
AV02-3678EN
C3330 transistor
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3210 sot343
Abstract: ATF-33143 Alpha 1000 GaAsFET
Text: Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package Technical Data ATF-33143 Features Surface Mount Package SOT-343 • Low Noise Figure Description Agilent’s ATF-33143 is a high dynamic range, low noise, PHEMT housed in a 4-lead SC-70 SOT-343 surface mount plastic
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ATF-33143
OT-343
ATF-33143
SC-70
OT-343)
SC-70)
3210 sot343
Alpha 1000 GaAsFET
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C3330 transistor
Abstract: NPN transistor mhz s-parameter AN-S011 amplifier TRANSISTOR 12 GHZ AN-S012 BF 184 transistor 47E-18 IN 3319 B bjt4npn Marking KR SOT343
Text: Agilent MSA-2743 Cascadable Silicon Bipolar Gain Block MMIC Amplifier Data Sheet Applications • Cellular/PCS/WLL basestations • Wireless data/ WLAN • Fiber-optic systems • ISM Description Agilent Technologies’ MSA-2743 is a low current silicon gain block
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MSA-2743
MSA-2743
SC-70
OT-343)
OT-343
SC-70)
5980-2400E
5989-4221EN
C3330 transistor
NPN transistor mhz s-parameter
AN-S011
amplifier TRANSISTOR 12 GHZ
AN-S012
BF 184 transistor
47E-18
IN 3319 B
bjt4npn
Marking KR SOT343
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