Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    Z14 SMT Search Results

    Z14 SMT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    A9784- Coilcraft Inc Transformer, planar, SMT, RoHS Visit Coilcraft Inc
    B0310- Coilcraft Inc Transformer, planar, SMT, RoHS Visit Coilcraft Inc
    CST1-06 Coilcraft Inc Current sensor, SMT, RoHS Visit Coilcraft Inc
    CST2010-03 Coilcraft Inc Current sensor, SMT, RoHS Visit Coilcraft Inc
    CST2010-08 Coilcraft Inc Current sensor, SMT, RoHS Visit Coilcraft Inc

    Z14 SMT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MOSFET Transistors IRL

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF19060 MRF19060R3 MRF19060S MRF19060SR3 The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for CDMA, TDMA, GSM and multicarrier amplifier


    Original     		PDF MRF19060 MRF19060R3 MRF19060S MRF19060SR3 MOSFET Transistors IRL

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 7, 12/2004 RF Power Field Effect Transistors MRF19060R3 MRF19060SR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for CDMA, TDMA, GSM and multicarrier amplifier


    Original     		PDF MRF19060R3 MRF19060SR3

    22 Z1

    Abstract: z14 SMT
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF19060 MRF19060R3 MRF19060SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for CDMA, TDMA, GSM and multicarrier amplifier


    Original     		PDF MRF19060 MRF19060R3 MRF19060SR3 22 Z1 z14 SMT

    J524

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 1, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF5S19150HR3 MRF5S19150HSR3 J524

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF19060/D SEMICONDUCTOR TECHNICAL DATA MRF19060 MRF19060R3 MRF19060S MRF19060SR3 The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from


    Original     		PDF MRF19060/D MRF19060 MRF19060R3 MRF19060S MRF19060SR3 MRF19060/D

    567 tone

    Abstract: 100B100JCA500X CDR33BX104AKWS MRF19060 MRF19060R3 MRF19060SR3
    Text: MOTOROLA Order this document by MRF19060/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF19060 MRF19060R3 MRF19060SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from


    Original     		PDF MRF19060/D MRF19060 MRF19060R3 MRF19060SR3 MRF19060 MRF19060R3 567 tone 100B100JCA500X CDR33BX104AKWS MRF19060SR3

    100B100JCA500X

    Abstract: CDR33BX104AKWS MRF19060 MRF19060R3 MRF19060SR3
    Text: MOTOROLA Order this document by MRF19060/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF19060 MRF19060R3 MRF19060SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from


    Original     		PDF MRF19060/D MRF19060 MRF19060R3 MRF19060SR3 MRF19060 MRF19060R3 100B100JCA500X CDR33BX104AKWS MRF19060SR3

    AGR18060E

    Abstract: AGR18060EF AGR18060EU CDR33BX104AKWS JESD22-A114 100B100JCA500X
    Text: AGR18060E 60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for enhanced data for global evolution (EDGE), global


    Original     		PDF AGR18060E Hz--1880 AGR18060E AGR18060EU AGR18060EF AGR18060EF AGR18060EU CDR33BX104AKWS JESD22-A114 100B100JCA500X

    100B8R2JCA500X

    Abstract: 100B100JCA500X AGR18060E AGR18060EF AGR18060EU CDR33BX104AKWS JESD22-A114
    Text: AGR18060E 60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for enhanced data for global evolution (EDGE), global


    Original     		PDF AGR18060E Hz--1880 AGR18060E AGR18060EU AGR18060EF 100B8R2JCA500X 100B100JCA500X AGR18060EF AGR18060EU CDR33BX104AKWS JESD22-A114

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF19060/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF19060R3 MRF19060SR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from


    Original     		PDF MRF19060/D MRF19060R3 MRF19060SR3 MRF19060/D

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF19060 Rev. 9, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF19060LR3 MRF19060LSR3 Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for CDMA, TDMA, GSM and multicarrier amplifier


    Original     		PDF MRF19060 MRF19060LR3 MRF19060LSR3 MRF19060LR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF19060 Rev. 8, 3/2006 RF Power Field Effect Transistors MRF19060LR3 MRF19060LSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from


    Original     		PDF MRF19060 MRF19060LR3 MRF19060LSR3 MRF19060

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF19060 Rev. 7, 12/2004 RF Power Field Effect Transistors MRF19060R3 MRF19060SR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for CDMA, TDMA, GSM and multicarrier amplifier


    Original     		PDF MRF19060 MRF19060R3 MRF19060SR3

    465B

    Abstract: AN1955 ATC100B102JT50XT CDR33BX104AKYS MRF5S19150H MRF5S19150HR3 T491C105M050AT
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S19150H Rev. 4, 10/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5S19150HR3 Designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF5S19150H MRF5S19150HR3 465B AN1955 ATC100B102JT50XT CDR33BX104AKYS MRF5S19150H MRF5S19150HR3 T491C105M050AT

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S19150H Rev. 4, 10/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5S19150HR3 Designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF5S19150H MRF5S19150HR3

    567 tone

    Abstract: 100B100JCA500X CDR33BX104AKWS MRF19060 MRF19060LR3 MRF19060LSR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF19060 Rev. 9, 5/2006 RF Power Field Effect Transistors MRF19060LR3 MRF19060LSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from


    Original     		PDF MRF19060 MRF19060LR3 MRF19060LSR3 MRF19060LR3 567 tone 100B100JCA500X CDR33BX104AKWS MRF19060 MRF19060LSR3

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet October 2003 AGR18060E 60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for


    Original     		PDF AGR18060E AGR18060E AGR18060EU AGR18060EF DS02-325RFPP

    transistor 7350 A

    Abstract: 100B100JCA500X AGR19060E AGR19060EF AGR19060EU JESD22-C101A transistor 7350
    Text: AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—


    Original     		PDF AGR19060E Hz--1990 AGR19060E AGR19060XU AGR19060EF AGR19060XE 12-digit transistor 7350 A 100B100JCA500X AGR19060EF AGR19060EU JESD22-C101A transistor 7350

    CDR33BX104AKWS

    Abstract: MRF19060 MRF19060LR3 MRF19060LSR3 100B100JCA500X 100B5R1
    Text: Freescale Semiconductor Technical Data Document Number: MRF19060 Rev. 9, 5/2006 RF Power Field Effect Transistors MRF19060LR3 MRF19060LSR3 Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for CDMA, TDMA, GSM and multicarrier amplifier


    Original     		PDF MRF19060 MRF19060LR3 MRF19060LSR3 MRF19060LR3 CDR33BX104AKWS MRF19060 MRF19060LSR3 100B100JCA500X 100B5R1

    CDR33BX104AKWS

    Abstract: MRF19060 MRF19060R3 MRF19060SR3 100B100JCA500X
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF19060/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF19060R3 MRF19060SR3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs


    Original     		PDF MRF19060/D MRF19060R3 MRF19060SR3 MRF19060R3 CDR33BX104AKWS MRF19060 MRF19060SR3 100B100JCA500X

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF19060 Rev. 7, 12/2004 RF Power Field Effect Transistors MRF19060R3 MRF19060SR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for CDMA, TDMA, GSM and multicarrier amplifier


    Original     		PDF MRF19060 MRF19060R3 MRF19060SR3

    100B100JCA500X

    Abstract: AGR19090E AGR19090EF AGR19090EU JESD22-C101A R190 19090
    Text: AGR19090E 90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19090E is a 90 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—


    Original     		PDF AGR19090E Hz--1990 AGR19090E AGR19090EU AGR19090EF 100B100JCA500X AGR19090EF AGR19090EU JESD22-C101A R190 19090

    "RF Power Amplifier"

    Abstract: 100B100JCA500X AGR18060E AGR18060EF AGR18060EU CDR33BX104AKWS JESD22-C101A 100B8R2JCA500X
    Text: Preliminary Data Sheet April 2004 AGR18060E 60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for


    Original     		PDF AGR18060E Hz--1880 AGR18060E AGR18060EU AGR18060EF DS04-156RFPP DS04-032RFPP) "RF Power Amplifier" 100B100JCA500X AGR18060EF AGR18060EU CDR33BX104AKWS JESD22-C101A 100B8R2JCA500X

    Untitled

    Abstract: No abstract text available
    Text: MRF5S19150H Rev. 1, 12/2004 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF5S19150H MRF5S19150HR3 MRF5S19150HSR3