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    Z3 SOT Search Results

    Z3 SOT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    Z3 SOT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking Z3

    Abstract: zener diode z3 ksd2044
    Text: SDZ5V6F Semiconductor Zener Diode Features • Compact type • Radiation size 1.6mm x 2.9mm • Surface mount lead configuration Ordering Information Type NO. SDZ5V6F Marking Package Code Z3 SOT-23F Outline Dimensions unit : mm 2.4±0.1 1.6±0.1 1.90 BSC


    Original     		PDF OT-23F KSD-2044-000 marking Z3 zener diode z3 ksd2044

    z3 SOT-23

    Abstract: ksd2009 Z3 SOT
    Text: SDZ5V6 Semiconductor Zener Diode Features • Compact type • Radiation size 1.3mm x 2.9mm • Surface mount lead configuration Ordering Information Type NO. SDZ5V6 Marking Package Code Z3 SOT-23 Outline Dimensions unit : mm 2.4±0.1 1.30±0.1 3 2.9±0.1


    Original     		PDF OT-23 KSD-2009-000 z3 SOT-23 ksd2009 Z3 SOT

    SOT538A

    Abstract: No abstract text available
    Text: PDF: 2002 Aug 22 Philips Semiconductors Package outline Ceramic surface mounted package; 2 leads SOT538A D A 3 z2 4x z4 (4×) D1 D2 B c 1 L A z1 (4×) E2 H E1 E z3 (4×) 2 α w1 M B M b Q 2.5 5 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)


    Original     		PDF OT538A SOT538A

    SOT796A

    Abstract: sot796
    Text: PDF: 2003 Dec 09 Philips Semiconductors Package outline Leadless surface mounted package; plastic cap; 18 terminations ZD2 10x e3 (2×) ZE2 (12×) 1 e4 (2×) e (2×) 2 e2 (2×) e1 (2×) 3 4 ZD1 (10×) e3 (2×) 5 SOT796A Z (7×) Z3 6 ZE1 (12×) Z4 Z6 (48×)


    Original     		PDF OT796A SOT796A sot796

    ze2 diode

    Abstract: transistor z4 sot775
    Text: PDF: 2003 Oct 13 Philips Semiconductors Package outline Leadless surface mounted package; plastic cap; 16 terminations ZD2 10x e (2×) e2 (2×) 1 2 ZD1 (10×) e1 (12×) 3 SOT775A Z (8×) Z3 4 5 ZE1 (10×) ZE2 (10×) 16 6 15 7 14 8 Z4 Z2 L (16×) Z6 (36×)


    Original     		PDF OT775A ze2 diode transistor z4 sot775

    17BB1

    Abstract: 56Z6
    Text: Package outline Philips Semiconductors Leadless surface mounted package; plastic cap; 22 terminations e1 4x b (18×) e (14×) L2 (4×) 7 Z7 (2×) 1 2 3 4 5 6 Z6 (2×) b1 (14×) Z3 22 e2 8 (4×) 21 9 20 10 19 11 L1 (8×) 18 17 16 15 14 SOT649A 13 Z (8×)


    Original     		PDF OT649A 17BB1 56Z6

    SOT56

    Abstract: sot567
    Text: PDF: 2002 Jun 06 Philips Semiconductors Package outline Leadless surface mounted package; plastic cap; 8 terminations b1 8x e ZD (2×) 1 (6×) Z5 (2×) b (8×) 2 3 SOT567A Z1 (6×) 1 4 Z3 (35×) 2 3 4 7 6 5 Z4 (2×) Z (4×) Z2 (35×) L (6×) Z7 (12×) 8


    Original     		PDF OT567A SOT56 sot567

    Untitled

    Abstract: No abstract text available
    Text: Package outline Philips Semiconductors Leadless surface-mounted package; plastic cap; 22 terminations e1 4x b (18×) e (14×) L2 (4×) 7 Z7 (2×) 1 2 3 4 5 6 Z3 Z6 (2×) b1 (14×) 22 8 (4×) 21 9 20 10 19 11 L1 (8×) 17 16 15 14 13 Z (8×) Z4 e2 18 SOT649A


    Original     		PDF OT649A

    Untitled

    Abstract: No abstract text available
    Text: Package outline Leadless surface-mounted package; plastic cap; 16 terminations ZD2 10x e (2×) e2 (2×) 1 ZD1 (10×) e1 (12×) 2 3 SOT775A 4 Z (8×) Z3 5 ZE1 (10×) ZE2 (10×) 16 6 15 7 14 8 Z4 Z2 L (16×) Z6 (36×) 13 12 11 10 9 b1 (2×) b (14×) Z5 (36×)


    Original     		PDF OT775A

    Untitled

    Abstract: No abstract text available
    Text: Package outline Leadless surface-mounted package; plastic cap; 8 terminations b1 8x e ZD (2×) 1 (6×) 2 Z5 (2×) b (8×) 3 SOT567A Z1 (6×) 1 4 2 Z3 (35×) 3 4 6 5 Z4 (2×) Z (4×) Z2 (35×) L (6×) Z7 (12×) 8 7 6 5 8 Z8 (10×) Dimensions of terminations


    Original     		PDF OT567A

    Untitled

    Abstract: No abstract text available
    Text: Package outline Leadless surface-mounted package; plastic cap; 16 terminations e1 L1 4x L (12×) e1 b (12×) 1 2 3 Z6 (12×) L3 (4×) 5 e2 e b2 (2×) Z4 (12×) Z (2×) Z5 (4×) 4 L2 16 b4 (4×) (4×) 15 SOT559A Z1 (2×) Z3 (2×) 6 14 Z7 (6×) e b7 (4×)


    Original     		PDF OT559A

    Untitled

    Abstract: No abstract text available
    Text: Package outline Leadless surface-mounted package; plastic cap; 18 terminations ZD2 10x e3 (2×) ZE2 (12×) e4 (2×) 1 e (2×) 2 e1 (2×) e2 (2×) 3 4 ZD1 (10×) e3 (2×) 5 SOT796A Z (7×) Z3 6 ZE1 (12×) 18 Z4 Z6 (48×) 7 e1 (4×) 17 Z2 8 16 9 e4 (2×)


    Original     		PDF OT796A

    Untitled

    Abstract: No abstract text available
    Text: Package outline Philips Semiconductors Leadless surface-mounted package; plastic cap; 8 terminations b1 8x e ZD (2×) 1 (6×) Z5 (2×) b (8×) 2 3 SOT567A Z1 (6×) 1 4 Z3 (35×) 2 3 4 7 6 5 Z4 (2×) Z (4×) Z2 (35×) L (6×) Z7 (12×) 8 7 6 5 8 Z8 (10×)


    Original     		PDF OT567A

    47z7

    Abstract: E-222 SOT649
    Text: PDF: 2002 Feb 25 Philips Semiconductors Package outline Leadless surface mounted package; plastic cap; 12 terminations e1 4x b (18×) e (14×) L2 (4×) 7 Z7 (2×) 1 2 3 4 5 6 Z3 Z6 (2×) b1 (14×) 8 (4×) 21 9 20 10 19 11 L1 (8×) 17 16 15 14 13 Z (8×)


    Original     		PDF OT649A 47z7 E-222 SOT649

    Z550

    Abstract: Fp2189 AVX 0603 MTBF
    Text: FP2189 The Communications Edge TM Advanced Datasheet 1 Watt HFET Product Features • 50 – 4000 MHz • Up to +31 dBm P1dB • Up to +45 dBm Output IP3 • High Drain Efficiency • 19 dB Gain @ 900 MHz • MTBF >100 Years • SOT-89 SMT Package Product Description


    Original     		PDF FP2189 FP2189 OT-89 1-800-WJ1-4401 Z550 AVX 0603 MTBF

    RF transistors with s-parameters

    Abstract: 2.5 GHz RF power transistors with s-parameters 400 watt circuit diagram 51Z4 high power FET transistor s-parameters WJ transistor
    Text: FP1189 The Communications Edge TM Advanced Datasheet ½ Watt HFET Product Features • 50 – 4000 MHz • Up to +27 dBm P1dB • Up to +40 dBm Output IP3 • High Drain Efficiency • 19 dB Gain @ 900 MHz • MTBF >100 Years • SOT-89 SMT Package Product Description


    Original     		PDF FP1189 OT-89 FP1189 1-800-WJ1-4401 RF transistors with s-parameters 2.5 GHz RF power transistors with s-parameters 400 watt circuit diagram 51Z4 high power FET transistor s-parameters WJ transistor

    AVX 0603 MTBF

    Abstract: high power FET transistor s-parameters FP2189 GETEK RF transistors with s-parameters FET transistors with s-parameters RF power transistors with s-parameters 115Z4 transistor z3
    Text: FP2189 The Communications Edge TM Preliminary Product Information 1 Watt HFET Product Features • 50 – 4000 MHz • Up to +31 dBm P1dB • Up to +45 dBm Output IP3 • High Drain Efficiency • 19 dB Gain @ 900 MHz • MTBF >100 Years • SOT-89 SMT Package


    Original     		PDF FP2189 OT-89 FP2189 1-800-WJ1-4401 AVX 0603 MTBF high power FET transistor s-parameters GETEK RF transistors with s-parameters FET transistors with s-parameters RF power transistors with s-parameters 115Z4 transistor z3

    RF transistors with s-parameters

    Abstract: high power FET transistor s-parameters c4 sot-89 4C922 LL1608-FH3N3S FP1189-PCB-900
    Text: FP1189 The Communications Edge TM Preliminary Product Information ½ Watt HFET Product Features • 50 – 4000 MHz • Up to +27 dBm P1dB • Up to +40 dBm Output IP3 • High Drain Efficiency • 19 dB Gain @ 900 MHz • MTBF >100 Years • SOT-89 SMT Package


    Original     		PDF FP1189 OT-89 FP1189 1-800-WJ1-4401 RF transistors with s-parameters high power FET transistor s-parameters c4 sot-89 4C922 LL1608-FH3N3S FP1189-PCB-900

    Z5.4

    Abstract: sot632
    Text: PDF: 2001 Nov 20 Philips Semiconductors Package outline Leadless surface mounted package; plastic cap; 12 terminations ZD 2x SOT632A e1 (4×) e (4×) 1 Z5 (4×) Z (2×) 2 3 4 5 e2 (2×) 12 6 Z2 (6×) Z7 (4×) Z4 (8×) L (12×) 11 b (8×) 10 9 b1 (4×) 8


    Original     		PDF OT632A Z5.4 sot632

    Untitled

    Abstract: No abstract text available
    Text: PDF: 2000 Sep 28 Philips Semiconductors Package outline Leadless surface mounted package; plastic cap; 16 terminations e1 L1 4x L (12×) e1 b (12×) 1 2 Z6 (12×) L3 (4×) Z4 (12×) Z (2×) 3 Z5 (4×) 4 L2 16 b4 (4×) (4×) 15 5 e2 e b2 (2×) SOT559A Z1 (2×)


    Original     		PDF OT559A

    MG271H

    Abstract: marking s22 GRM1555C1H1R0BA01 mmic C5 sot 86 GRM1555C1H1R2BA01 GRM1555C1H1R8BA01
    Text: Freescale Semiconductor Technical Data Document Number: MMG20271H9 Rev. 0, 12/2011 Enhancement Mode pHEMT Technology E-pHEMT MMG20271H9T1 High Linearity Amplifier The MMG20271H9 is a high dynamic range, single-stage, low noise amplifier MMIC, housed in a SOT-89 standard plastic package. With high OIP3 and low


    Original     		PDF MMG20271H9 OT--89 MMG20271H9T1 MMG20271H9 MG271H marking s22 GRM1555C1H1R0BA01 mmic C5 sot 86 GRM1555C1H1R2BA01 GRM1555C1H1R8BA01

    Untitled

    Abstract: No abstract text available
    Text: BfcfllHEWLJETT WLliM PACKARD H P 832 2 0 A D CS1800 T est S et Tfechnical Data 1710 MHz to 1880 MHz HP 8922 Series GSM RF Test Sets HP 83220A DCS1800 Test Set .1-:^ □ 0 Q S 0 g E 3 S lG ^ !Z3 QDCSCS m r i ; } Q - ; a •■ 0 3 i:- £ & E . m QCSi Gj 3


    OCR Scan     		PDF CS1800 3220A DCS1800 3220A/HP DCS1800 6091-M70E

    bzx98c

    Abstract: 1N30098 Z3813 Z3827 in137
    Text: SEU ITRO N IN D U S T R IE S LTD 43E 013700^ D QGGD 1 S 3 4 B1 S L C B rT'-lU\"7 IN3900/IN2900/Z3 S E R I E S Hermetically Sealed •Voltage Regulator Diode Released to BS9305-F079 ■Voltage Range 3.0 to 400 Volts 10.0 Watt Steady State ■400 Watt Peak Power


    OCR Scan     		PDF IN3900/IN2900/Z3 BS9305-F079 9305-F-079 DO-35 DO-41 DO-15 DO-201AD bzx98c 1N30098 Z3813 Z3827 in137

    Untitled

    Abstract: No abstract text available
    Text: r 6 3 6 7 2 5 5 M O TO RO LA S C D IO D E S / O P T O Tfi 980 78628 DE|b3b7HS5 P _ T - 0 7-/9 DOTahEâ t T -fH l SOT-23 D IO D E S (continued) Zener Diodes (continued) Pinout: 1-Anode, 2-NC, 3-Cathode VZ i Volts Vz2 Volts V Z3 Volts «1 : iz mA <Z2 1 1


    OCR Scan     		PDF OT-23 BV2109 BV3102 BV409 MMBV432L