Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    Z38 SERIES Search Results

    Z38 SERIES Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PQU650M-F-COVER Murata Manufacturing Co Ltd PQU650M Series - 3x5 Fan Cover Kit, RoHs Medical Visit Murata Manufacturing Co Ltd
    9004FM/B Rochester Electronics LLC 9004 - NAND Gate, 9004 Series Visit Rochester Electronics LLC Buy
    100183FC Rochester Electronics LLC Multiplier, 100K Series, 8-Bit, ECL, CQFP24, CERPAK-24 Visit Rochester Electronics LLC Buy
    74AC521SC REEL Rochester Electronics LLC 74AC521 - Identity Comparator, AC Series, 8-Bit, Inverted Output, CMOS Visit Rochester Electronics LLC Buy
    MM74HC4538M-G Rochester Electronics LLC 74HC4538 - Monostable Multivibrator, HC/UH Series, 2-Func, CMOS Visit Rochester Electronics LLC Buy

    Z38 SERIES Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    Z38 Series Unknown Basic Transistor and Cross Reference Specification Scan PDF

    Z38 SERIES Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Z38 Series

    Abstract: VT2V8UP5510 "Rf Front-End" sharp VTST5HD950 VTST-Series 13B1 VTST5HD970 VTST5JB540 VTST5JF540 VTST5UF740
    Text: E099_113.fm 109 ページ ２００１年９月２３日 日曜日 午後１時４５分 RF ANALOG TERRESTRIAL RF FRONT-END UNIT ✩New product • RF FRONT-END UNITS <VTST Series> ◆ Features 1 Miniature size achieved using thin profile, low height design in industry standard RF front-end unit (terminal shape and terminal pin arrays)


    Original     		PDF VTST5HD970 Z38 Series VT2V8UP5510 "Rf Front-End" sharp VTST5HD950 VTST-Series 13B1 VTST5HD970 VTST5JB540 VTST5JF540 VTST5UF740

    Untitled

    Abstract: No abstract text available
    Text: Revised February 2000 NC7SZ38 TinyLogic UHS 2-Input NAND Gate Open Drain Output General Description Features The NC7SZ38 is a single 2-Input NAND Gate with open drain output stage from Fairchild’s Ultra High Speed Series of TinyLogic. The device is fabricated with advanced


    Original     		PDF NC7SZ38

    7Z38

    Abstract: MA05B MO-178 NC7SZ38 NC7SZ38M5 NC7SZ38M5X NC7SZ38P5 NC7SZ38P5X Z38 Series
    Text: Revised November 1999 NC7SZ38 TinyLogic UHS 2-Input NAND Gate Open Drain Output General Description Features The NC7SZ38 is a single 2-Input NAND Gate with open drain output stage from Fairchild’s Ultra High Speed Series of TinyLogic. The device is fabricated with advanced


    Original     		PDF NC7SZ38 NC7SZ38 7Z38 MA05B MO-178 NC7SZ38M5 NC7SZ38M5X NC7SZ38P5 NC7SZ38P5X Z38 Series

    7Z38

    Abstract: MA05B MO-178 NC7SZ38 NC7SZ38M5 NC7SZ38M5X NC7SZ38P5 NC7SZ38P5X
    Text: Revised January 2001 NC7SZ38 TinyLogic UHS 2-Input NAND Gate Open Drain Output General Description Features The NC7SZ38 is a single 2-Input NAND Gate with open drain output stage from Fairchild’s Ultra High Speed Series of TinyLogic. The device is fabricated with advanced


    Original     		PDF NC7SZ38 NC7SZ38 7Z38 MA05B MO-178 NC7SZ38M5 NC7SZ38M5X NC7SZ38P5 NC7SZ38P5X

    7Z38

    Abstract: No abstract text available
    Text: Revised June 2000 NC7SZ38 TinyLogic UHS 2-Input NAND Gate Open Drain Output General Description Features The NC7SZ38 is a single 2-Input NAND Gate with open drain output stage from Fairchild’s Ultra High Speed Series of TinyLogic. The device is fabricated with advanced


    Original     		PDF NC7SZ38 7Z38

    7Z38

    Abstract: MA05B NC7SZ38 NC7SZ38M5 NC7SZ38M5X NC7SZ38P5 NC7SZ38P5X SC70-5 JA SOT23
    Text: NC7SZ38 TinyLogic UHS 2-Input NAND Gate Open Drain Output General Description Features The NC7SZ38 is a single 2-Input NAND Gate with open drain output stage from Fairchild’s Ultra High Speed Series of TinyLogic™. The device is fabricated with advanced


    Original     		PDF NC7SZ38 NC7SZ38 7Z38 MA05B NC7SZ38M5 NC7SZ38M5X NC7SZ38P5 NC7SZ38P5X SC70-5 JA SOT23

    w50d

    Abstract: IMD-B101-01 Fresnel lens f60D pyroelectric amplifier circuit pyroelectric infrared sensor IMD-B102-01 "Pyroelectric Infrared Sensor"
    Text: Please read CAUTION and Notice in this catalog for safety. This catalog has only typical specifications. Therefore you are requested to approve our product specification or to transact the approval sheet for product specification, before your ordering. S21E3.pdf 03.2.17


    Original     		PDF S21E3 IMD-B101-01) 30min. 260T5D MIL-STD-202F FC-40) 125T5D w50d IMD-B101-01 Fresnel lens f60D pyroelectric amplifier circuit pyroelectric infrared sensor IMD-B102-01 "Pyroelectric Infrared Sensor"

    sharp Universal lnb bs1r8el100a

    Abstract: sharp Universal lnb BS1R8EL100A BS2F7VZ0194 BS2S7HZ6306 BS2S7HZ0302A BS2F7VZ0194A BS2S7VZ0302A BS2F7VZ0194,A SHARP sharp bs2f7vz0724
    Text: RF LOW NOISE BLOCKDOWN CONVERTER • Europe: LNB for Broadcasting Satellite ◆ Features 1 (2) (3) (4) Wide band type receiving all broadcasting channels (analog & digital) of Europe. [Universal LNB] Originally developed feed-horn waveguide makes the wide-band, low-noise characteristics possible.


    Original     		PDF BS1R8EL100A] BS1R6EL400A BS1R5EL200A BS1R8EL100A VT2V8UP5510 VT2V8UP5510 sharp Universal lnb bs1r8el100a sharp Universal lnb BS2F7VZ0194 BS2S7HZ6306 BS2S7HZ0302A BS2F7VZ0194A BS2S7VZ0302A BS2F7VZ0194,A SHARP sharp bs2f7vz0724

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP8600H Rev. 1, 9/2011 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Optimized for broadband operation from 470 to 860 MHz. Device has an integrated input matching network for better power distribution. These devices


    Original     		PDF MRFE6VP8600H MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5

    C3225X7R2A225KT

    Abstract: 8-30VDC 74C125 UT-141C-25 rf Amplifier mhz Doherty 470-860 Rogers RO4350B microstrip ATC100B240JT500X capacitor 104 Z30 470-860 mhz Power amplifier w ATC-100B-3R0
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP8600H Rev. 1, 9/2011 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Optimized for broadband operation from 470 to 860 MHz. Device has an integrated input matching network for better power distribution. These devices


    Original     		PDF MRFE6VP8600H MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5 C3225X7R2A225KT 8-30VDC 74C125 UT-141C-25 rf Amplifier mhz Doherty 470-860 Rogers RO4350B microstrip ATC100B240JT500X capacitor 104 Z30 470-860 mhz Power amplifier w ATC-100B-3R0

    Z-34

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF19120 MRF19120S The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for CDMA base station applications at frequencies from 1930 to 1990 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in class AB for PCN–PCS/cellular radio and WLL applications.


    Original     		PDF MRF19120 MRF19120S Z-34

    MRFE6VP8600H

    Abstract: MRFE6VP UT-141C-25 C3225X7R2A225KT UT-141C CRCW120610R0JNEA mrfe6vp8600hs C19C40 ATC200B ATC20
    Text: Document Number: MRFE6VP8600H Rev. 0, 9/2011 Freescale Semiconductor Technical Data RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Optimized for broadband operation from 470 to 860 MHz. Device has an integrated input matching network for better power distribution. These devices


    Original     		PDF MRFE6VP8600H MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5 MRFE6VP UT-141C-25 C3225X7R2A225KT UT-141C CRCW120610R0JNEA mrfe6vp8600hs C19C40 ATC200B ATC20

    226 35K capacitor

    Abstract: capacitor 226 35K C40 Sprague 105 35K capacitor R 226 35k
    Text: Freescale Semiconductor Technical Data Rev. 10, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF21120R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF21120R6 226 35K capacitor capacitor 226 35K C40 Sprague 105 35K capacitor R 226 35k

    226 35K capacitor

    Abstract: capacitor 226 35K R 226 35k
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF 2170fficiency, MRF21120 MRF21120S 226 35K capacitor capacitor 226 35K R 226 35k

    226 35K

    Abstract: 226 35K capacitor capacitor 226 35K electrolytic capacitor 226 35k 226 35K 649 226 35K 750 gps-500 105 35K capacitor R 226 35k
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF21120 N–Channel Enhancement–Mode Lateral MOSFET Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF21120 226 35K 226 35K capacitor capacitor 226 35K electrolytic capacitor 226 35k 226 35K 649 226 35K 750 gps-500 105 35K capacitor R 226 35k

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF19120 MRF19120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications.


    Original     		PDF IntegrF19120 MRF19120S MRF19120

    capacitor 226 35K

    Abstract: 105 35K capacitor 226 35K capacitor capacitor 104 Z30 electrolytic capacitor 226 35k capacitor 104 35k
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications.


    Original     		PDF MRF21120 MRF21120S capacitor 226 35K 105 35K capacitor 226 35K capacitor capacitor 104 Z30 electrolytic capacitor 226 35k capacitor 104 35k

    z24 mosfet

    Abstract: No abstract text available
    Text: AGR09180EF 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code-division multiple access (CDMA), global


    Original     		PDF AGR09180EF Hz--895 DS04-123RFPP DS04-031RFPP) z24 mosfet

    AGR09180EF

    Abstract: JESD22-C101A transistor z14 L
    Text: AGR09180EF 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code-division multiple access (CDMA), global


    Original     		PDF AGR09180EF Hz--895 AGR09180EF suit-20 AGR19K180U JESD22-C101A transistor z14 L

    C40 Sprague

    Abstract: C201A Z25 transistor UT-141A AGR09180E AGR09180EF AGR09180EU JESD22-C101A
    Text: Preliminary Data Sheet November 2003 AGR09180E 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09180E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular


    Original     		PDF AGR09180E Hz--895 AGR09180E DS04-031RFPP DS02-342RFPP) C40 Sprague C201A Z25 transistor UT-141A AGR09180EF AGR09180EU JESD22-C101A

    Untitled

    Abstract: No abstract text available
    Text: S E M I C O N D U C T O R TM NC7SZ38 TinyLogic UHS 2-Input NAND Gate Open Drain Output General Description Features The NC7SZ38 is a single 2-input NAND Gate with open drain output stage from Fairchild’s Ultra High Speed Series of TinyLogic™. The device is fabricated with advanced


    OCR Scan     		PDF NC7SZ38

    Untitled

    Abstract: No abstract text available
    Text: S E M I C O N D U C T O R TM NC7SZ38 TinyLogic UHS 2-Input NAND Gate Open Drain Output General Description Features The NC7SZ38 is a single 2-Input NAND Gate with open drain output stage from Fairchild’s Ultra High Speed Series of TinyLogic™. The device is fabricated with advanced


    OCR Scan     		PDF NC7SZ38 NC7SZ38

    7Z38

    Abstract: No abstract text available
    Text: :M I C O N D U C T D R Revised March 1999 tm NC7SZ38 TinyLogic UHS 2-Input NAND Gate Open Drain Output Features • Space saving SOT23 or SC70 5-lead package specilied to operate over the 1.8V to 5.5V Vc c range. The inputs and output are high impedance when V qq is OV.


    OCR Scan     		PDF NC7SZ38 7Z38

    7Z38

    Abstract: MA05B MO-178 NC7SZ38 NC7SZ38M5 NC7SZ38M5X NC7SZ38P5 NC7SZ38P5X jedec MO-178 AB
    Text: S E M I C O N D U C T O R Revised M arch 1999 TM NC7SZ38 TinyLogic UHS 2-Input NAND Gate Open Drain Output Features • S pace saving SO T23 or SC 70 5-lead package specified to operate o ver the 1.8V to 5 .5V V qq range. The inputs and output are high im pedance w hen V qq is OV.


    OCR Scan     		PDF NC7SZ38 NC7SZ38 7Z38 MA05B MO-178 NC7SZ38M5 NC7SZ38M5X NC7SZ38P5 NC7SZ38P5X jedec MO-178 AB