Z38 Series
Abstract: VT2V8UP5510 "Rf Front-End" sharp VTST5HD950 VTST-Series 13B1 VTST5HD970 VTST5JB540 VTST5JF540 VTST5UF740
Text: E099_113.fm 109 ページ ２００１年９月２３日 日曜日 午後１時４５分 RF ANALOG TERRESTRIAL RF FRONT-END UNIT ✩New product • RF FRONT-END UNITS <VTST Series> ◆ Features 1 Miniature size achieved using thin profile, low height design in industry standard RF front-end unit (terminal shape and terminal pin arrays)
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VTST5HD970
Z38 Series
VT2V8UP5510
"Rf Front-End" sharp
VTST5HD950
VTST-Series
13B1
VTST5HD970
VTST5JB540
VTST5JF540
VTST5UF740
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Untitled
Abstract: No abstract text available
Text: Revised February 2000 NC7SZ38 TinyLogic UHS 2-Input NAND Gate Open Drain Output General Description Features The NC7SZ38 is a single 2-Input NAND Gate with open drain output stage from Fairchild’s Ultra High Speed Series of TinyLogic. The device is fabricated with advanced
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NC7SZ38
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7Z38
Abstract: MA05B MO-178 NC7SZ38 NC7SZ38M5 NC7SZ38M5X NC7SZ38P5 NC7SZ38P5X Z38 Series
Text: Revised November 1999 NC7SZ38 TinyLogic UHS 2-Input NAND Gate Open Drain Output General Description Features The NC7SZ38 is a single 2-Input NAND Gate with open drain output stage from Fairchild’s Ultra High Speed Series of TinyLogic. The device is fabricated with advanced
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NC7SZ38
NC7SZ38
7Z38
MA05B
MO-178
NC7SZ38M5
NC7SZ38M5X
NC7SZ38P5
NC7SZ38P5X
Z38 Series
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7Z38
Abstract: MA05B MO-178 NC7SZ38 NC7SZ38M5 NC7SZ38M5X NC7SZ38P5 NC7SZ38P5X
Text: Revised January 2001 NC7SZ38 TinyLogic UHS 2-Input NAND Gate Open Drain Output General Description Features The NC7SZ38 is a single 2-Input NAND Gate with open drain output stage from Fairchild’s Ultra High Speed Series of TinyLogic. The device is fabricated with advanced
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NC7SZ38
NC7SZ38
7Z38
MA05B
MO-178
NC7SZ38M5
NC7SZ38M5X
NC7SZ38P5
NC7SZ38P5X
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7Z38
Abstract: No abstract text available
Text: Revised June 2000 NC7SZ38 TinyLogic UHS 2-Input NAND Gate Open Drain Output General Description Features The NC7SZ38 is a single 2-Input NAND Gate with open drain output stage from Fairchild’s Ultra High Speed Series of TinyLogic. The device is fabricated with advanced
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NC7SZ38
7Z38
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7Z38
Abstract: MA05B NC7SZ38 NC7SZ38M5 NC7SZ38M5X NC7SZ38P5 NC7SZ38P5X SC70-5 JA SOT23
Text: NC7SZ38 TinyLogic UHS 2-Input NAND Gate Open Drain Output General Description Features The NC7SZ38 is a single 2-Input NAND Gate with open drain output stage from Fairchild’s Ultra High Speed Series of TinyLogic™. The device is fabricated with advanced
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NC7SZ38
NC7SZ38
7Z38
MA05B
NC7SZ38M5
NC7SZ38M5X
NC7SZ38P5
NC7SZ38P5X
SC70-5
JA SOT23
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w50d
Abstract: IMD-B101-01 Fresnel lens f60D pyroelectric amplifier circuit pyroelectric infrared sensor IMD-B102-01 "Pyroelectric Infrared Sensor"
Text: Please read CAUTION and Notice in this catalog for safety. This catalog has only typical specifications. Therefore you are requested to approve our product specification or to transact the approval sheet for product specification, before your ordering. S21E3.pdf 03.2.17
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S21E3
IMD-B101-01)
30min.
260T5D
MIL-STD-202F
FC-40)
125T5D
w50d
IMD-B101-01
Fresnel lens
f60D
pyroelectric amplifier circuit
pyroelectric infrared sensor
IMD-B102-01
"Pyroelectric Infrared Sensor"
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sharp Universal lnb bs1r8el100a
Abstract: sharp Universal lnb BS1R8EL100A BS2F7VZ0194 BS2S7HZ6306 BS2S7HZ0302A BS2F7VZ0194A BS2S7VZ0302A BS2F7VZ0194,A SHARP sharp bs2f7vz0724
Text: RF LOW NOISE BLOCKDOWN CONVERTER • Europe: LNB for Broadcasting Satellite ◆ Features 1 (2) (3) (4) Wide band type receiving all broadcasting channels (analog & digital) of Europe. [Universal LNB] Originally developed feed-horn waveguide makes the wide-band, low-noise characteristics possible.
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BS1R8EL100A]
BS1R6EL400A
BS1R5EL200A
BS1R8EL100A
VT2V8UP5510
VT2V8UP5510
sharp Universal lnb bs1r8el100a
sharp Universal lnb
BS2F7VZ0194
BS2S7HZ6306
BS2S7HZ0302A
BS2F7VZ0194A
BS2S7VZ0302A
BS2F7VZ0194,A SHARP
sharp bs2f7vz0724
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP8600H Rev. 1, 9/2011 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Optimized for broadband operation from 470 to 860 MHz. Device has an integrated input matching network for better power distribution. These devices
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MRFE6VP8600H
MRFE6VP8600HR6
MRFE6VP8600HR5
MRFE6VP8600HSR6
MRFE6VP8600HSR5
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C3225X7R2A225KT
Abstract: 8-30VDC 74C125 UT-141C-25 rf Amplifier mhz Doherty 470-860 Rogers RO4350B microstrip ATC100B240JT500X capacitor 104 Z30 470-860 mhz Power amplifier w ATC-100B-3R0
Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP8600H Rev. 1, 9/2011 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Optimized for broadband operation from 470 to 860 MHz. Device has an integrated input matching network for better power distribution. These devices
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MRFE6VP8600H
MRFE6VP8600HR6
MRFE6VP8600HR5
MRFE6VP8600HSR6
MRFE6VP8600HSR5
C3225X7R2A225KT
8-30VDC
74C125
UT-141C-25
rf Amplifier mhz Doherty 470-860
Rogers RO4350B microstrip
ATC100B240JT500X
capacitor 104 Z30
470-860 mhz Power amplifier w
ATC-100B-3R0
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Z-34
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF19120 MRF19120S The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for CDMA base station applications at frequencies from 1930 to 1990 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in class AB for PCN–PCS/cellular radio and WLL applications.
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MRF19120
MRF19120S
Z-34
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MRFE6VP8600H
Abstract: MRFE6VP UT-141C-25 C3225X7R2A225KT UT-141C CRCW120610R0JNEA mrfe6vp8600hs C19C40 ATC200B ATC20
Text: Document Number: MRFE6VP8600H Rev. 0, 9/2011 Freescale Semiconductor Technical Data RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Optimized for broadband operation from 470 to 860 MHz. Device has an integrated input matching network for better power distribution. These devices
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MRFE6VP8600HR6
MRFE6VP8600HR5
MRFE6VP8600HSR6
MRFE6VP8600HSR5
MRFE6VP
UT-141C-25
C3225X7R2A225KT
UT-141C
CRCW120610R0JNEA
mrfe6vp8600hs
C19C40
ATC200B
ATC20
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226 35K capacitor
Abstract: capacitor 226 35K C40 Sprague 105 35K capacitor R 226 35k
Text: Freescale Semiconductor Technical Data Rev. 10, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF21120R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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226 35K capacitor
capacitor 226 35K
C40 Sprague
105 35K capacitor
R 226 35k
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226 35K capacitor
Abstract: capacitor 226 35K R 226 35k
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF21120
MRF21120S
226 35K capacitor
capacitor 226 35K
R 226 35k
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226 35K
Abstract: 226 35K capacitor capacitor 226 35K electrolytic capacitor 226 35k 226 35K 649 226 35K 750 gps-500 105 35K capacitor R 226 35k
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF21120 N–Channel Enhancement–Mode Lateral MOSFET Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF21120
226 35K
226 35K capacitor
capacitor 226 35K
electrolytic capacitor 226 35k
226 35K 649
226 35K 750
gps-500
105 35K capacitor
R 226 35k
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF19120 MRF19120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications.
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IntegrF19120
MRF19120S
MRF19120
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capacitor 226 35K
Abstract: 105 35K capacitor 226 35K capacitor capacitor 104 Z30 electrolytic capacitor 226 35k capacitor 104 35k
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications.
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MRF21120
MRF21120S
capacitor 226 35K
105 35K capacitor
226 35K capacitor
capacitor 104 Z30
electrolytic capacitor 226 35k
capacitor 104 35k
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z24 mosfet
Abstract: No abstract text available
Text: AGR09180EF 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code-division multiple access (CDMA), global
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Hz--895
DS04-123RFPP
DS04-031RFPP)
z24 mosfet
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AGR09180EF
Abstract: JESD22-C101A transistor z14 L
Text: AGR09180EF 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code-division multiple access (CDMA), global
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AGR09180EF
Hz--895
AGR09180EF
suit-20
AGR19K180U
JESD22-C101A
transistor z14 L
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C40 Sprague
Abstract: C201A Z25 transistor UT-141A AGR09180E AGR09180EF AGR09180EU JESD22-C101A
Text: Preliminary Data Sheet November 2003 AGR09180E 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09180E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular
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AGR09180E
Hz--895
AGR09180E
DS04-031RFPP
DS02-342RFPP)
C40 Sprague
C201A
Z25 transistor
UT-141A
AGR09180EF
AGR09180EU
JESD22-C101A
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Untitled
Abstract: No abstract text available
Text: S E M I C O N D U C T O R TM NC7SZ38 TinyLogic UHS 2-Input NAND Gate Open Drain Output General Description Features The NC7SZ38 is a single 2-input NAND Gate with open drain output stage from Fairchild’s Ultra High Speed Series of TinyLogic™. The device is fabricated with advanced
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NC7SZ38
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Untitled
Abstract: No abstract text available
Text: S E M I C O N D U C T O R TM NC7SZ38 TinyLogic UHS 2-Input NAND Gate Open Drain Output General Description Features The NC7SZ38 is a single 2-Input NAND Gate with open drain output stage from Fairchild’s Ultra High Speed Series of TinyLogic™. The device is fabricated with advanced
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NC7SZ38
NC7SZ38
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7Z38
Abstract: No abstract text available
Text: :M I C O N D U C T D R Revised March 1999 tm NC7SZ38 TinyLogic UHS 2-Input NAND Gate Open Drain Output Features • Space saving SOT23 or SC70 5-lead package specilied to operate over the 1.8V to 5.5V Vc c range. The inputs and output are high impedance when V qq is OV.
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NC7SZ38
7Z38
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7Z38
Abstract: MA05B MO-178 NC7SZ38 NC7SZ38M5 NC7SZ38M5X NC7SZ38P5 NC7SZ38P5X jedec MO-178 AB
Text: S E M I C O N D U C T O R Revised M arch 1999 TM NC7SZ38 TinyLogic UHS 2-Input NAND Gate Open Drain Output Features • S pace saving SO T23 or SC 70 5-lead package specified to operate o ver the 1.8V to 5 .5V V qq range. The inputs and output are high im pedance w hen V qq is OV.
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NC7SZ38
NC7SZ38
7Z38
MA05B
MO-178
NC7SZ38M5
NC7SZ38M5X
NC7SZ38P5
NC7SZ38P5X
jedec MO-178 AB
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