Untitled
Abstract: No abstract text available
Text: Customer Information Sheet D R A W I N G N o . : H9 02 8 - 0 I | IF IN D O U B T - ASK | C | NOT T O S C A L E | THIRD ANGLE PROJECTION | A LL D I M E N S I O N S IN 0 2 . 3 9 ± 0. 05 (ÿ i 09 + ^ ^ 1— ' -0.03 0 I .78 ±0.05 V//////////Z7777Á -5.08-
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H90280I
v/y///y/////7777A
Z9028-00
H9028-0I
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srm2264lct
Abstract: No abstract text available
Text: SRM2264LTio/i2 HIGH SPEED CMOS 64K-BIT STATIC RAM • Industrial Temperature Range • DESCRIPTION The SRM2264Lio/i2 is an 8,192 words x 8 bits asynchronous, static, random access memory on a monolithic CMOS chip. Its very low standby power requirement makes it ideal for applications requiring non-volatile storage
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SRM2264LTio/i2
64K-BIT
SRM2264Lio/i2
SRM2264LTio
100ns
SRM2264LT
120ns
SRM2264LTio/i2
28-pin
srm2264lct
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Untitled
Abstract: No abstract text available
Text: TC74HCT646AP <7 TC74HCT648AP O C T A L B U S T R A N S C E IV E R / R E G IS T E R TC74HCT646AP N O N - IN V E R T IN G TC74HCT648AP I N V E R T I N G _ The T C 7 4 H C T 6 4 6 A /H C T 6 4 8 A O CTAL BUS a re high speed T R A N S C E IV E R / R E G IS T E R S
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TC74HCT646AP
TC74HCT648AP
TC74HCT648AP
TC74HCT646A
TC74HCT648A
TC74HCT646AP
648AP-5
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JIS D 5500
Abstract: ip5216 IS-287J kojiri JASO 7002 JIS D 0203 portland cement
Text: Product Specification 108-5216-2 M ; m I oo .070 Multi-Lock I/O Connector MLC for Wire-to-Board Termination 1. Scope: o This specification provides performance requirements and test methods for .070 Series AMP Multi-Lock I/O Connector (MLC) for wire-to-board termination, of the part numbers specified in Para.2
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MIL-STD-202
JIS D 5500
ip5216
IS-287J
kojiri
JASO 7002
JIS D 0203
portland cement
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Untitled
Abstract: No abstract text available
Text: p g a a G E C P L E S S E Y J B E i AD VANC E INFORMATION 3 0 4 7 -3 2 SL6442 1GHZ AMPLIFIER/MIXER Supersedes May 1992 Edition Th e SL6442 U H F A m p lifie r and M ixer is desig n ed fo r use in cordless telephones, c e llu la r telephones, pagers and lowp o w e r receivers operating at fre q u en cies up to 1GHz It
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SL6442
SL6442
100nH
950MHz
SLS442
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Untitled
Abstract: No abstract text available
Text: PBt tt t G E C P L E S S E Y —S UI tM« » ¡ C» O! N D UL1J1LJ.IL C T O R S ADVANCE INFORMATION SP8802 3.3GHz - t -2 FIXED MODULUS DIVIDER The SP8802 is one of a range of very high speed low power prescalers for professional and military applications. The
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SP8802
SP8802
-140dB
10kHz)
420mW
1000MHz
Z7777
37bfi522
DD2131Ã
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tney2
Abstract: HM5241 5241605
Text: HM5241605 Series 131,072-word x 16-bit x 2-bank Synchronous Dynamic RAM HITACHI A ll inputs and outputs are referred to the rising edge of the clock input. The HM5241605 is offered in 2 banks for improved performance. _ F e a tu re s •3.3V Power s u p p
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HM5241605
072-word
16-bit
Hz/57
Hz/50
195/300/Kinko
M19T041
tney2
HM5241
5241605
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TP10N
Abstract: No abstract text available
Text: £ 7 7 SGS-THOMSON k7#s. BD glSÌ(S ilLI(@T^ liD(ei Application Specific Discretes a q 25 n TSIxxBI TER M IN AL SET INTERFACE PROTECTION AND DIODE BRIDGE MAIN APPLICATION Telecom equipment requiring combined protection against transient overvoltages and
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Untitled
Abstract: No abstract text available
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-424LFG641 3.3 V OPERATION 4M -W ORD BY 64-BIT DYNAMIC RAM MODULE UNBUFFERED TYPE, EDO Description The MC-424LFG641F and MC-424LFG641FW are a 4,194,304 words by 64 bits dynamic RAM modules on which
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MC-424LFG641
64-BIT
MC-424LFG641F
MC-424LFG641FW
uPD4216405L
/iPD4265165)
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Untitled
Abstract: No abstract text available
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-4216LFF72 3.3 V OPERATION 16M-WORD BY 72-BIT DYNAMIC RAM MODULE BUFFERED TYPE, EDO Description The MC-4216LFF72 is a 16,777,216 words by 72 bits dynamic RAM module on which 18 pieces of 64M DRAM
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MC-4216LFF72
16M-WORD
72-BIT
MC-4216LFF72
uPD4264405
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Untitled
Abstract: No abstract text available
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-42S4LFG64S 3.3 V OPERATION 4M-W ORD BY 64-BIT DYNAMIC RAM MODULE SO DIMM , EDO Description The MC-42S4LFG64S is a 4,194,304 words by 64 bits dynamic RAM module (Small Outline DIMM) on which 4
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MC-42S4LFG64S
64-BIT
MC-42S4LFG64S
uPD42S65165
C-42S4LFG
64S-A50
64S-A60
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Untitled
Abstract: No abstract text available
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-42S8LFG64S 3.3 V OPERATION 8M-W ORD BY 64-BIT DYNAMIC RAM MODULE SO DIMM , EDO Description The MC-42S8LFG64S is a 8,388,608 words by 64 bits dynamic RAM module (Small Outline DIMM) on which 8
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MC-42S8LFG64S
64-BIT
MC-42S8LFG64S
uPD42S65165
C-42S8LFG
64S-A50
64S-A60
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Untitled
Abstract: No abstract text available
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-4216LFH641 3.3 V OPERATION 16M-W ORD BY 64-BIT DYNAMIC RAM MODULE UNBUFFERED TYPE, EDO Description The MC-4216LFH641 is a 16,777,216 words by 64 bits dynamic RAM module on which 16 pieces of 64M DRAM
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MC-4216LFH641
16M-W
64-BIT
MC-4216LFH641
uPD4264405
C-4216LFH641-A50
C-4216LFH641-A60
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Untitled
Abstract: No abstract text available
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-428LFH641 3.3 V OPERATION 8M-WORD BY 64-BIT DYNAMIC RAM MODULE UNBUFFERED TYPE, EDO Description The MC-428LFH641 is a 8,388,608 words by 64 bits dynamic RAM module on which 8 pieces of 64M DRAM :
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MC-428LFH641
64-BIT
MC-428LFH641
uPD4264805
C-428LFH641-A50
C-428LFH641-A60
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Untitled
Abstract: No abstract text available
Text: ADVANCE MT58LC128K32/36E1 128K X 32/36 SYNCBURST SRAM M IC R O N 128K X32/36 SRAM +3.3V SUPPLY, +2.5V I/O, FLOW-THROUGH AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • • • • • • • • • PIN ASSIGNMENT (Top View F ast access tim es: 8.5, 9 ,1 0 ,1 1 an d 12ns
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MT58LC128K32/36E1
MT56LC12BK32/36E1
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Untitled
Abstract: No abstract text available
Text: ffì HARRIS HC-5509B S E M I C O N D U C T O R SLIC Subscriber Line Interface Circuit March1993 Features Description • Dl Monolithic High Vbltage Process • Compatible with Wbrldwlde PBX and CO Performance Requirements • Controlled Supply of Battery Feed Current with Programmable
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HC-5509B
HC-550X
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AM2BF010
Abstract: 28F010 TRANSISTOR TZ am28f010-150 P5752 11559F-12 11559F-2 am28f010-200
Text: FINAL a A m 2 8 F 0 1 0 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V — 90 ns maximum access time ■ CMOS Low power consumption
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Am28F010
32-Pin
AM2BF010
28F010
TRANSISTOR TZ
am28f010-150
P5752
11559F-12
11559F-2
am28f010-200
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R7F7
Abstract: No abstract text available
Text: Preliminary H M 5216165 S e r ie s 524,2SS-word x 16-blt x 2-bank Syn ch ro n o u s D ynam ic R A M HITACHI All inpuls and outputs are referred to the rising e d g e o f th e c lo c k in p u t. T h e H M 5 2 1 6 1 6 5 is offered in 2 banks for improved performance.
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16-blt
HM5216165TT-10
HM5216165TT-12
HM5216165TT-15
400-mil
50-pin
TTP-50D)
HM5216165
073-Vm
R7F7
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HM514100
Abstract: No abstract text available
Text: HM 514100JP/ZP-7-4,194,304-W ord x 1-Bit Dynam ic Random A ccess M em ory • DESCR IPTIO N HM514400JP Series The Hitachi HM514100 is a CMOS dynamic RAM organized 4,194,304 word x 1-bit. HM514100 has realized higher density, higher performance and various func
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HM514100JP-7
HM514100ZP-7
HM514100
20-pin
14100LJP/LZP
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Y112
Abstract: SOP32 525mil t18i kiv 07 na572
Text: >¿3C3- KNo. N *5721 Em m x = *- z 1M 1 3 1 0 7 2 7 - K x 8 l i M - 7 5 ï / î / a > t y s // <.#%&* -IIIk |l!’ s|f 1310727- H X ê fc 'v h W 3.3VIH —"ÄÌR Jftil ? iz ¿ J g . # 3 .3 V itl- S j» (r «t Æ >U — F/v ï h m W * r í6 T ? * 5 . //
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LE28CV1001
AT-12/15
LE28CV1001AM,
CMOS777'
120D9/150Ã
15jiA
10VlOÃ
525mil)
LE28CV10Q1AM
X20mm)
Y112
SOP32 525mil
t18i
kiv 07
na572
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nec A2C
Abstract: No abstract text available
Text: DATA SHEET NEC / 421165 MOS INTEGRATED CIRCUIT _ _ ¿ ¿ P D 1 M-BIT DYNAMIC RAM 64K-WORD BY 16-BIT, HYPER PAGE MODE EDO , BYTE READ/WRITE MODE Description T h e /¿PD421165 is a 6 5,536 w o rd s b y 16 b its C M O S dy n a m ic R A M w ith o p tio nal h y p e r pag e m ode (EDO ).
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64K-WORD
16-BIT,
uPD421165
PD421165
44-pin
HPD421165-25-A
PP421165
P40LE-400A-2
PD421165
/1PD421165G5-7JF:
nec A2C
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Untitled
Abstract: No abstract text available
Text: /= T SGS-THOMSON “ 7i, MIBBamiWBDMIBS Application Specific Discretes A.S.D. SSRP130B1 TRIPOLAR ASYMMETRICAL FOR TELECOM EQUIPMENT MAIN APPICATIONS Where asymetrical protection against lightning strikes and other transient overvoltages is required : • Solid-State relays
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SSRP130B1
SSRP130B1
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DA108S1
Abstract: No abstract text available
Text: r z 7 S G S -T H O M S O N Ä 7 # RfflDOœUlLiOir^OiDSi S M P 75-8 LOW VOLTAGE PRIMARY PROTECTION MAIN APPLICATION ANY SENSITIVE EQUIPMENT REQUIRING EFFICIENT PROTECTION AGAINST LIGHTNING STRIKES AND OTHER T R A N S IE N T S : . T1/E1 TRUNK LINE DESCRIPTION
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P75-8is
15pecifications
DA108S1
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Untitled
Abstract: No abstract text available
Text: HITACHI KAOHSIUNG HITACHI ELECTRONICS CO.,LTD P.O. BOX 26-27 2,13TH EAST ST. K.E.P.Z. KAOHSIUNG TAIWAN R.O.C. TEL: 07 8215811 (7 LINE) FAX:(07) 8215815 FOR MESSRS :_ _ _ DATE : May. 13.2008 CUSTOMER’S ACCEPTANCE SPECIFICATIONS SP14Q005-ZZA
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SP14Q005-ZZA
7B64PS
-SP14Q005-ZZA-6
SP14Q005-ZZA-6
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