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    ZD 351 Search Results

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    ZD 351 Price and Stock

    Carling Technologies VVPZD35-1EK

    HARDWARE SWITCH ROCKER
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey VVPZD35-1EK Bulk 100
    • 1 -
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    • 100 $7.3344
    • 1000 $7.3344
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    Mouser Electronics VVPZD35-1EK
    • 1 $12.33
    • 10 $10.47
    • 100 $7.33
    • 1000 $7.25
    • 10000 $7.25
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    Master Electronics VVPZD35-1EK
    • 1 -
    • 10 $9.27
    • 100 $6.19
    • 1000 $3.69
    • 10000 $3.69
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    Eaton Corporation FAZ-D35/1-NA-SP

    Circuit Breakers FAZ-NA 1P 35A D CURVE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics FAZ-D35/1-NA-SP
    • 1 $283.07
    • 10 $268.92
    • 100 $254.77
    • 1000 $254.77
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    Newark FAZ-D35/1-NA-SP Bulk 1
    • 1 $68.55
    • 10 $65.12
    • 100 $58.27
    • 1000 $58.27
    • 10000 $58.27
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    Eaton Corporation FAZ-D35/1-RT

    Circuit Breakers FAZ 1P 35A D CURVE ring term
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics FAZ-D35/1-RT
    • 1 $310.59
    • 10 $295.07
    • 100 $279.55
    • 1000 $279.55
    • 10000 $279.55
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    Eaton Cutler-Hammer FAZ-D3.5/1

    FAZ-D3,5/1 SUPPLEMENTARY PROTECTOR 1P 3.5A D CURVE | Eaton - Cutler Hammer FAZ-D3.5/1
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS FAZ-D3.5/1 Bulk 26 Weeks 1
    • 1 $43.19
    • 10 $40.16
    • 100 $38.44
    • 1000 $38.44
    • 10000 $38.44
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    Eaton Cutler-Hammer FAZ-D35/1-RT

    FAZ UL 489 MCB 1P 35A D CURVE RING TERMINAL | Eaton - Cutler Hammer FAZ-D35/1-RT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS FAZ-D35/1-RT Bulk 26 Weeks 1
    • 1 $73.23
    • 10 $69.56
    • 100 $58.58
    • 1000 $58.58
    • 10000 $58.58
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    ZD 351 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: ALUMINUM ELECTROLYTIC CAPACITORS ZD 3.0mmL Chip Type series Chip type with 3.0mmL height. Designed for surface mounting on high density PC board. Applicable to automatic mounting machine fed with carrier tape. Compliant to the RoHS directive 2011/65/EU .


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    PDF 2011/65/EU) 120Hz, 100kHz 10kHz

    Untitled

    Abstract: No abstract text available
    Text: アルミニウム電解コンデンサ ALUMINUM ZD ELECTROLYTIC CAPACITORS チップ3.0mmL品 シリーズ 面実装品 耐洗浄品 小形薄形品 面実装タイプ製品高さ 3.0mmL 品。 キャリアテーピング包装により自動装着が可能。


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    PDF 2011/65/EUï 120Hzï 100kHz 120Hz 300Hz 10kHzâ

    ZD 103 ma

    Abstract: LT/SG3527A op292g AD8436
    Text: 3 75 90 98 190 0.1 0.001 10 5 H 3 5 67 85 98 190 0.1 0.001 10 5 H • • 1 0.095 0.013 2.5 2 90 100 105 45 0.015 0.020 10 45 H • • 1 5 2.7 6 4 60 65 113 22 0.05 0.550 30 20 H S S • • 1 3 5 25 20 38 45 83 45 0.05 0.700 50 2501 I S S PDIP5 <6 1 0.004


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    PDF AD8534 SC705 OT-235 ST07377- ZD 103 ma LT/SG3527A op292g AD8436

    microprocessor Rockwell R6500

    Abstract: No abstract text available
    Text: R6500/1E R6500/1E Microprocessor Emulator Device * » Rockwell INTRODUCTION document. The R650Q/1 Product Description Order No. 212 con­ tains a description of R6500/1 functions and interface signals. The R6500/1E device provides all the features of the R6500/1


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    PDF R6500/1E R650Q/1 R6500/1 R6500/1E R6500/1 16-bit 64-pin microprocessor Rockwell R6500

    2716 PROM

    Abstract: 2732 prom 2716A "64-pin" rockwell microprocessor Rockwell R6500 maxim max 1987 rom 2716 r65001
    Text: R6500/1E R6500/1E Microprocessor Emulator Device Rockwell INTRODUCTION document. TheR650Q/1 Product Description Order No. 212 con­ tains a description of R6500/1 functions and interface signals. The R6500/1E device provides all the features of the R6500/1


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    PDF R6500/1E R6500/1E R6500/1 16-bit TheR650G/1 2716 PROM 2732 prom 2716A "64-pin" rockwell microprocessor Rockwell R6500 maxim max 1987 rom 2716 r65001

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 32K x 36 Bit Flow-Through BurstRAM Synchronous Fast Static RAM Order this docum ent by MCM69F536C/D MCM69F536C The MCM69F536C is a 1M bit synchronous fast static RAM designed to pro­ vide a burstable, high performance, secondary cache for the 68K Family,


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    PDF MCM69F536C/D MCM69F536C i960TM, Pari51 1ATX35448-0

    Untitled

    Abstract: No abstract text available
    Text: MICRON I 128K X TECHNOLOGY, INC. MT58LC128K16/18B3 16/18 SYNCBURST SRAM 128KX 16/18 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, FLOW-THROUGH AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • • • • • • • Fast access times: 8.5,9,10 and 11ns


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    PDF MT58LC128K16/18B3 128KX

    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    PDF 3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007

    1N6227

    Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    WT 7520

    Abstract: diode lt 8220 SAC 1630 L saa 1070 tic125 tsumu T920 thyristor GE 1780 scr 3f scr thyristor power diode 1000 volt 700 amper
    Text: POWER SEMICONDUCTORS IN C 1TE D • 72^14^0 D0003b4 1 ■ POS "T-Ol-01 T'-ZS-C>| D PACK THYRISTOR POWER PACK TH YR ISTO R S 28mm. <25 mm.) RMS Forward Current Ave. Forward Current Peak One-Cycle Surge @ 8.3 ms I 2 t @ 8.3 ms Forward Voltage Drop Max. Operating Temperature


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    PDF T-Ol-01 -28-Unt-2A- 453/JJ5Ã 422M0 T0-94 h-755 WT 7520 diode lt 8220 SAC 1630 L saa 1070 tic125 tsumu T920 thyristor GE 1780 scr 3f scr thyristor power diode 1000 volt 700 amper

    zd2500

    Abstract: WT 7520 CS 601 thyristor TIC125 T920 thyristor power diode 1000 volt 700 amper thyristor 100 amper diode lt 8220 cs 1694 eo saa 1070
    Text: POWER SEMICONDUCTORS INC 1TE D • 7 2 ^ 1 4 ^ 0 D0003b4 1 ■ POS " T -O l-0 1 T '- Z S - C > | RMS Forward Current Ave. Forward Current Peak One-Cycle Surge @ 8.3 ms I 2 t @ 8.3 ms Forward Voltage Drop Max. Operating Temperature Symbol Units ' t RMS


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    PDF T-Ol-01 1001b. 254-turns zd2500 WT 7520 CS 601 thyristor TIC125 T920 thyristor power diode 1000 volt 700 amper thyristor 100 amper diode lt 8220 cs 1694 eo saa 1070

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    Untitled

    Abstract: No abstract text available
    Text: ISSI IS61SP6464 64Kx 64 SYNCHRONOUS PIPELINE STATIC RAM PRELIMINARY APRIL 1999 FEATURES DESCRIPTION • Fast access time: The IS S IIS61SP6464 is a high-speed, low-power synchro­ nous static RAM designed to provide a burstable, highperformance, secondary cache for the i486 , Pentium™,


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    PDF IS61SP6464 128-Pin 1SP6464-7PQ IS61SP6464-8TQ IS61SP6464-8PQ IS61SP6464-133TQI IS61SP6464-133PQI IS61SP6464-117TQI IS61SP6464-117PQI IS61SP6464-100TQI

    SEM 5027A

    Abstract: transistor BD 540 LYS MC710G 131-80 wj 89 MC707G 2n328 LN4005 diode reverse current and voltage mc708g C844P TS36A
    Text: SELECTION GUIDES How To Use The Data Book Numerical Index Alphabetical Index Device Outlines GENERAL INFORMATION SILICON ZENER DIODES Regulator Diodes, Reference Diodes, Precision Reference Diodes and Reference Amplifiers SILICON RECTIFIERS SILICON RECTIFIER ASSEMBLIES


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    tl 2345 ml

    Abstract: O002222 DA am/tl 2345 ml
    Text: 4L* R o c k w e ll Semiconductor Systems XFER extended FAXENGINE Device Set with Reduced Drive - Introduction The Rockwell extended FAXENGINE™ Device Set consists of a Rockwell extended Facsimile Controller with reduced drive XFCR device and a Rockwell MONOFAX


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    PDF PD-PLCC-28 28-Pin MD200 tl 2345 ml O002222 DA am/tl 2345 ml

    PE-68510

    Abstract: PE-68508 PE 68508 TH1042
    Text: HIGH SPEED LAN MAGNETICS MODULES Pulse A TECHNITROL COMPANY Designed for 100 Mbps and 155 Mbps Transmission over UTP-5 Cable 155 ATM, 100Base-TX, TP-FDDI, and 10/1 OOBase-TX applications Cable interface for isolation and low common mode emissions Fully integrated modules for multiport


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    PDF 100Base-TX, PE-68508 PE-68510 PE-68517 H1042 PE 68508 TH1042

    XFC-B

    Abstract: 65ZD tl 2345 ml MD139 motor zd cz 35 F00000 4xc 8-pin 73d25
    Text: XFE Family extended FAXENGINE Device Set Rockwell INTRODUCTION FAXENGINE extended Facsimile Controller T he R ockw ell e x te n d e d FAX E N G IN E ™ D evice Set co nsists of a R ockw ell e x te n d e d F acsim ile Controller XFC device and a R o ckw e ll M O N O FA X M odem


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    PDF 144-Pin 7S11073 28-PIN GP00-D169) PD-PLCC-28 MD139 XFC-B 65ZD tl 2345 ml MD139 motor zd cz 35 F00000 4xc 8-pin 73d25

    Untitled

    Abstract: No abstract text available
    Text: W E S T E R N D ÍG /T A L C O R P O R A T I O N WD1100-13 ECC Support Device FEATURES • 32 BIT COMPUTER SELECTED POLYNOMIAL • PARALLEL INPUT AND OUTPUT • DATA TRANSFER RATES UP TO 5 MBITS/SEC • RECORD LENGTH UP TO 1038 BYTES INCLUD­ ING CHECK BYTES


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    PDF WD1100-13

    AL5V

    Abstract: No abstract text available
    Text: V M 7 1 8 0 F S eries 4 r VTC Inc. V alue the C ustom er 2 or 4-CHANNEL, 5-VOLT, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER PRELIMINARY FEATURES • August, 1997 BLOCK DIAGRAM G e n e ra l - Single Power Supply 5 V ± 10% - Designed for 2-Terminal Thin-Film or MIG Heads


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    PDF 52nV/VFlz VM7180F 7182F 14-lead VM718230FVSN AL5V

    Diode KD 514

    Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
    Text: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381


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    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 16K x 16 Bit Cache Tag RAM for PowerPC Processors The MPC27T416 is a 262,144 bit cache-tag static RAM designed to support PowerPC microprocessors at bus speeds up to 66 MHz. It is organized as 16K words of 16 bits each. There are 14 common I/O tag bits and 2 separate I/O


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    PDF MPC27T416 14-bit MPCZ7T416 27T416 MPC27T416TQ9 MPC27T416TQ9R MPC27T416TQ10 MPC27T416TQ10R MPC27T416TQ12

    Untitled

    Abstract: No abstract text available
    Text: M O TO R O LA SEMICONDUCTOR TECHNICAL DATA Order this docum ent by MCM69P618A/D MCM69P618A Product Preview 64K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM The MCM69P618A is a 1M bit synchronous fast static RAM designed to pro­ vide a burstable, high performance, secondary cache for the 68K Family, Pow­


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    PDF MCM69P618A/D MCM69P618A MCM69P618A i960TM with03 1ATX35175-0 69P618A/D

    Untitled

    Abstract: No abstract text available
    Text: FU JITSU SEM IC O N D U C TO R DATA SH EET_ : . ASSP Power Supply BIPOLAR Power Management Switching 1C with flash memory power switching function MB3807A • DESCRIPTION When data is written to or read from flash memory, it requires that the voltage at its power supply (V pp) be switched


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    PDF MB3807A MB3807A 374175b MB3807APF FPT-16P-M04) 083lMAX 006-aol

    1MX16

    Abstract: AS4LC1M16S0 4lc2m8
    Text: AS4LC2M8S0 AS4LC1M16S0 H igh Perform ance 2MX8/1MX16 CMOS DRAM 1 6 M egabit CM O S synchronous DRAM Advance information Features • Organization: 1,048 ,5 7 6 w ords x 8 bits x 2 banks 2M x8 52 4 ,2 8 8 w ords x 16 bits x 2 banks (lM x 16) • All signals referenced to positive edge o f dock


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    PDF 2MX8/1MX16 AS4LC1M16S0 AS4LC2M8S0-10TC 2M8S0-12TC 50-pin AS4LC1M16S0-10TC LCIM16S0-12TC 0001b27 G1998 1MX16 AS4LC1M16S0 4lc2m8