995-2000-000
Abstract: No abstract text available
Text: Cannon ZD Connectors USA Tooling for ZD / D*A ABT-607 Pneumatic Crimper The ABT-607 is a pneumatic powered and controlled machine. It is designed for customers with moderate volume. This machine is designed to semi-automatically crimp stamped and formed contacts
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ABT-607
ABT-607
ABT-620
CIET-20HDL
CIET-20-D
CIET-22DF
995-2000-000
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CCT-22D
Abstract: abt 607 995-2000-000
Text: ZD Connectors USA Tooling for ZD / D*A ABT-607 Pneumatic Crimper The ABT-607 is a pneumatic powered and controlled machine. It is designed for customers with moderate volume. This machine is designed to semi-automatically crimp stamped and formed contacts onto pre-stripped stranded or single conductor electrical wire. This machine will
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ABT-607
ABT-607
ABT-620
CIET-22DF
CCT-22D
CCT-22D
abt 607
995-2000-000
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equivalent transistor TT 3034
Abstract: DK434 TT 3034 cc 3053 myg 14 CDVM JE02 ZD 410 MF k84h 734E-02
Text: @7A45B "404)C9(0 <43B9)*DD* !"#$%!&'()*+,)-./0121)!3451'657(3)8/09 #$%:9455(;)#,)<./0121)<=;0/';(>(32"(?=;0/';(>(3 "(1B3/'0/65 V73$VG89:(A,3$(0.1),+1430$,30E+02)$)(0.'I7(E+0: $ ( ./:
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7A45B(
Y731d731`
equivalent transistor TT 3034
DK434
TT 3034
cc 3053
myg 14
CDVM
JE02
ZD 410 MF
k84h
734E-02
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Zd 607 MA
Abstract: ZD 607
Text: $ % M21L216128A SRAM 128 K x 16 SRAM HIGH SPEED CMOS SRAM FEATURES T T T T T T T T T T ORDERING INFORMATION Fast access times : 10, 12, and 15ns Fast OE access times : 5, 6, and 7ns Single +3.3V ± 0.3V power supply Fully static - no clock or timing strobes necessary
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M21L216128A
44-pin
400mil
M21L216128A-10J
M21L216128A-10T
M21L216128A-12J
M21L216128A-12T
M21L2161H
Zd 607 MA
ZD 607
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A62P
Abstract: A 144 transistor N11X 306 transistor ZD 607 la4s diode ZENER A21 ZENER A11 AN9DA00 transistor A21
Text: Analog Master Slice AN9D, AN9E, AN9F Series Analog master slice IC series • Overview The AN9D, AN9E and AN9F series are master slice ICs of bipolar process, which enables you to integrate an analog circuit easily onto a single chip. A custom IC can be made by placing a wired pattern designed in line with the customer's
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AN9DX00
AN9EX00
AN9FX00
AN9DA00
AN9DB00
AN9DC00
AN9DD00
AN9DE00
AN9DF00
AN9EA00
A62P
A 144 transistor
N11X
306 transistor
ZD 607
la4s
diode ZENER A21
ZENER A11
transistor A21
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ZD 607
Abstract: matsushita pnp AN9DD00 AN9DE00 AN9DF00 AN9EA00 AN9EB00 AN9DA00 AN9DB00 AN9DC00
Text: Analog Master Slice AN9D, AN9E, AN9F Series Analog master slice IC series • Overview The AN9D, AN9E and AN9F series are master slice ICs of bipolar process, which enables you to integrate an analog circuit easily onto a single chip. A custom IC can be made by placing a wired pattern designed in line with the customer's
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AN9DA00
Abstract: la4s ZENER A11 AN9DB00 AN9DC00 AN9DD00 AN9DE00 AN9DF00 AN9EA00 AN9EB00
Text: Analog Master Slice AN9D, AN9E, AN9F Series Analog master slice IC series • Overview ■ Features ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low tp in o co n an in :// g nt n ce c g pa U in tin t e fo na RL ue ue ype typ ur
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ZD 607
Abstract: sot101b sot158a 0020A2
Text: INTEGRATED CIRCUITS DATA SHEET PACKAGE INFORMATION Page Index - DIP LQFP SIL SO SSOP SQFP TAB VSO - Soldering - Package outlines Package information 1995 Sep 06 File under Integrated Circuits, IC12 Philips Semiconductors Package information
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DIP16
DIP20
DIP24
DIP28
DIP40
OT97-1;
OT38-1;
OT146X
OT314-2
ZD 607
sot101b
sot158a
0020A2
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ZD 607
Abstract: Q2004D3 Q2004D4 Q4004D3 Q4004D4 Q5004D3 Q5004D4 Q6004D3 Q6004D4 Q7004D4
Text: V-PAK TO-251AA MT2 MT1 G D-PAK Triacs 4 Amps 11 General Description 7HFFRU V QHZ OLQH RI '3$. DQG 93$. WULDFV LQFOXGH VXUIDFH PRXQW GHYLFHV ZLWK FXUUHQW FDSDELOLWLHV WKURXJK DPSHUHV 9ROW DJH UDQJHV DUH DYDLODEOH IURP WR YROWV 9DULDWLRQV RI GHYLFHV FRYHUHG LQ WKLV GDWD VKHHW DUH DYDLODEOH IRU
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O-251AA
ZD 607
Q2004D3
Q2004D4
Q4004D3
Q4004D4
Q5004D3
Q5004D4
Q6004D3
Q6004D4
Q7004D4
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3300 XL
Abstract: No abstract text available
Text: P 2-6 APPLICATION NOTES P7 CIE CHROMATICITY DIAGRAM P 8-23 TECHNICAL DATA P 24-25 BIN CODE SYSTEMS TECHNICAL DATA Absolute maximum ratings TA=25° C E Hi.Eff.Red Orange H Bright Red SR Super Bright R ed SU R K H yp er R ed SU R H yp er R ed SUR-E H yp er R ed
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Zd 607 MA
Abstract: 658512
Text: HM658512A Series 524288-word x 8 -bit High Speed CMOS Pseudo Static RAM HITACHI ADE-203-218B Z Rev. 2.0 Apr. 20, 1995 Description The Hitachi HM658512A is a CMOS pseudo static RAM organized 512-kword x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.8 ftm Hi-CMOS process
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HM658512A
524288-word
ADE-203-218B
512-kword
525-mil
460-mil
600-mil
Zd 607 MA
658512
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Untitled
Abstract: No abstract text available
Text: KM44C4000A/AL/ALL/ASL C M O S DRAM 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tRAC tC A C tR C KM44C4000A/AL/ALL/ASL-5 50ns 13ns 90ns KM44C4000A/AUALUASL-6 60ns 15ns 110ns KM44C4000A/AL/ALL/ASL-7 70ns
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KM44C4000A/AL/ALL/ASL
KM44C4000A/AL/ALL/ASL-5
KM44C4000A/AUALUASL-6
110ns
KM44C4000A/AL/ALL/ASL-7
130ns
KM44C4000A/AL/ALL/ASL-8
150ns
24-LEAD
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hep 154 silicon diode
Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This
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MY110B
Z0206
Z0208
Z0210
Z0211
Z0212
Z0214
Z0215
Z0217
Z0219
hep 154 silicon diode
zy 406 transistor
motorola HEP 801
hep 154 diode
hep R1751
triac zd 607
2sb337
RS5743.3
F82Z
hep 230 pnp
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Zd 607 MA
Abstract: N6AZ
Text: KM416C157A CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range: *RAC *CAC *RC KM416C157 A-6 60ns 15ns 110ns KM416C157A-7 70ns 20ns 130ns KM416C157A-8 80ns 20ns 150ns • Fast Page Mode operation • Byte Witte operation
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KM416C157A
KM416C157
KM416C157A-7
KM416C157A-8
110ns
130ns
150ns
KM416C157A
416C157A
Zd 607 MA
N6AZ
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ZD 607
Abstract: No abstract text available
Text: KMM5368100H/HG DRAM MODULES 8 M x 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Sam sung KMM5368100H i s a 8 M b its x 36 D ynam ic RAM high d e n sity m em ory m odule. The Sam sung KMM5368100H co n s is t o f eigh teen CMOS 4M x 4 bit
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KMM5368100H/HG
KMM5368100H
24-pin
72-pin
KMM5368100H-6
KMM5368100H-7
KMM5368100H-8
110ns
ZD 607
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triac zd 607
Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
Text: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni cian. The information contained herein is based on an analysis of the published
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thT404
ZV15A
ZY33A
ZT696
ZV15B
ZY33B
ZT697
ZT706
ZV27A
ZY62A
triac zd 607
hep c6004
2sb504
2SC 968 NPN Transistor
sje 607
motorola c6004
diode BY127 specifications
K872
af118
Motorola Semiconductor hep c3806p
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Untitled
Abstract: No abstract text available
Text: High Performance 128Kx8 CMOS Flash KEPROM II AS29F010 AS29F011 5 \ 128KxX CMOS Flash Memory FEATU RES • Organization: 131,072 words x 8 bits • JEDEC standard write cycle commands • Sector Erase architecture - protects data from accidental changes - Four 32K x 8 sectors
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128Kx8
AS29F010
AS29F011
128KxX
32-pin
0DDD337
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motorola 3-251
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R F 1EE D | b3b?5S4 0001.531. S | T ~ ^ 1*317 M A X I M U M R ATIN G S Sym bol V alue U n it Colfector-Em itter Voltag e Rating V CEO 40 Vdc C o llector-B ase V oltag e Vc b o 50 Vdc E m itter-Base V oltag e vebo 5.0 Vdc !C 50 m Adc C o lle cto r Current — Co ntinu ou s
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MD3250,
MD3251,
MQ3251
D3251
D3250
Q3251
motorola 3-251
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PDF
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BA3910B
Abstract: No abstract text available
Text: BA3910B B A 3 9 1OB Reference Voltage Power Supply • ÿfM ^'Æ EI/Dim ensions Unit : mm BA3910BÜ, 7ÏC T -T o v < = i> ff l5 . 6 V t tì * 1 ^ ^ JZU BACK UP A C C S S t t ì * 2 ^ ^ r t K L T l'Ì - T o The BA3910B is a one-chip IC developed for use
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BA3910B
BA3910BÜ
BA3910B
12PIN
10pin)
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PDF
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TLO 741
Abstract: TLR321 TLR306 TLR-313 TLR308 TLUG143 TLG306 TLR102 TLR-321 TLR313
Text: [1] TOSHIBA P ro d u c t Lists [ 1 ] Product Lists 1. LED Lam ps Product name Page Product name Page Product nam e Page TLGD189 TLGD190P 353 356 TLG102A 129 TLG218P 217 TLG102AKB 133 TLG220 221 TLG 102AKW 133 TLG221 225 TLGD231 359 TLG108A 129 TLG223 229 TLGD233P
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TLG102A
TLG102AKB
102AKW
TLG108A
TLG108AKB
108AKW
TLG113A
TLG113AP
TLG114A
TLG114AP
TLO 741
TLR321
TLR306
TLR-313
TLR308
TLUG143
TLG306
TLR102
TLR-321
TLR313
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Untitled
Abstract: No abstract text available
Text: W40S01-04 / CYPRESS SDRAM Buffer - 4 DIMM Features Key Specifications • Eighteen skew controlled CMOS outputs SDRAM0:17 Supply = 3.3V±5% • Supports four SDRAM DIMMs • Ideal for high-performance systems designed around
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W40S01-04
440BX
133-MHz
48-pin
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ZD 607
Abstract: KEYPAD 4 X 4 r393 J9CC BU8307CF c328 equivalent
Text: BU8307CS BU8307CF Pulse and tone dialer for telephone set The BU8307CS and BU8307CF are large scale integrated circuits for telephone sets. The LSI has both a pulse dialer and tone dialer, and a 32-digit redial buffer. Dimensions Units : mm BU8307CS (SDIP22)
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BU8307CS
BU8307CF
BU8307CF
32-digit
S400B
ZD 607
KEYPAD 4 X 4
r393
J9CC
c328 equivalent
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tda 1033
Abstract: 1033 TDA G8870DTMF TDA 810 FUNCTION BLOCK DIAGRAM G8870 8870 dtmf TDA 810 amplifier tda 810
Text: G8870 Id ia Microcircuits CMOS DTMF Integrated Receiver Features General Description • CMOS technology for low power c o n s u m p tio n 35 mW max. • Full DTMF receiver • Provides DTMF high and low group filtering • Adjustable acquisition and release times
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G8870
18-pin
20-pin
G8870
tda 1033
1033 TDA
G8870DTMF
TDA 810 FUNCTION BLOCK DIAGRAM
8870 dtmf
TDA 810 amplifier
tda 810
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Untitled
Abstract: No abstract text available
Text: Kingbright TECHNICAL DATA Absolute maximum ratings TA=25°C H Bright Red 1 Hi.Eff.Red E Hi.Eff.Red Orange G Green SG Super Bright Green QG Green PG Pure Green N Pure Orange (GaP) (GaAsP/GaP) (GaAsP/GaP) (GaP) (GaP) (GaP) (GaP) (GaAsP/GaP) Unit Reverse voltage
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