E30A23VR
Abstract: E30A23VS
Text: SEMICONDUCTOR E30A23VS, E30A23VR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. A3 A2 FEATURES A1 D3 B1 B2 D2 Zener Voltage : 23V Typ. D1 Average Forward Current : IO=30A. (- Type) E MAXIMUM RATING (Ta=25 CHARACTERISTIC
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E30A23VS,
E30A23VR
100mA,
E30A23VR
E30A23VS
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zener diode b2 12
Abstract: E30A23VR E30A23VS Zener Diode 6 a2 32V zener zener diode a2 11 zener MR a3 zener zener diode 11 b1 A2 12 zener diode
Text: SEMICONDUCTOR E30A37VS, E30A37VR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. A3 A2 FEATURES A1 D3 B1 B2 D2 Zener Voltage : 37V Typ. D1 Average Forward Current : IO=30A. (- Type) E MAXIMUM RATING (Ta=25 CHARACTERISTIC
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E30A37VS,
E30A37VR
100mA,
100ms
E30A23VS,
E30A23VR
zener diode b2 12
E30A23VR
E30A23VS
Zener Diode 6 a2
32V zener
zener diode a2 11
zener MR
a3 zener
zener diode 11 b1
A2 12 zener diode
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capacitor
Abstract: RESISTOR POTENTIOMETER GRM188R71H102K philips zener diode c12 GRM188R71H104KA potentiometer resistor capacitor 60 pF STEVAL-TDR016V1 PD55015-E RUBYCON CAPACITOR
Text: STEVAL-TDR016V1 Component ID Description B1, B2 D1 L1 L2 L3 L4 R1 R2 R3 R4 C1, C2 C3 C4 C5 C6, C12 C7 C8 C9 C10 C11 C13 TL1 TL2 TL3 RF in, RF out PD55015-E Board Ferrite Bead Zener Diode Inductor Inductor Inductor Inductor Resistor Potentiometer Resistor Resistor
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STEVAL-TDR016V1
PD55015-E
EXCELDRC35C
BZX284C5V1
214W-1-1e
214W-1-103E
OD110
GRM42-6C0G121_
capacitor
RESISTOR POTENTIOMETER
GRM188R71H102K
philips zener diode c12
GRM188R71H104KA
potentiometer resistor
capacitor 60 pF
RUBYCON CAPACITOR
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B1 6 zener
Abstract: HZU5.1 Hitachi DSA002743
Text: HZU Series Silicon Epitaxial Planar Zener Diodes for Stabilizer ADE-208-024F Z Rev. 6 Sept. 1, 1998 Features • Ultra small Resin Package (URP) is suitable for surface mount design. • These diodes are delivered taped. Ordering Information Type No. Mark
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ADE-208-024F
B1 6 zener
HZU5.1
Hitachi DSA002743
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet HZM-N Series Silicon Epitaxial Planar Zener Diode for Stabilizer R07DS0358EJ0600 Rev.6.00 May 19, 2011 Features • Wide spectrum from 1.9 V through 38 V of zener voltage provide flexible application. MPAK Package is suitable for high density surface mounting and high speed assembly.
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R07DS0358EJ0600
PLSP0003ZC-A
000pcs
R07DS0358EJ0600
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RD15M
Abstract: D47M RD5.1M-B1 RD10M RD11M RD12M RD13M RD16M RD18M RD20M
Text: ZENER DIODES R D 2 . 0 M —R D 4 7 M 200 mW MINI MOLD ZENER DIODE P ACKAG E DIMENSIONS DESCRIPTION Type RD2.0M to RD47M Series are planar type zener diodes pro cessing an allowable power dissipation of 200 mW. in m illim e te rs 0 .6 5 : 8; U FEA TU RES
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RD47M
RD47M
RD18M
RD20M
RD22M
RD24M
RD27M
RD30M
RD33M
RD15M
D47M
RD5.1M-B1
RD10M
RD11M
RD12M
RD13M
RD16M
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Untitled
Abstract: No abstract text available
Text: HZU Series Silicon Epitaxial Planar Zener Diodes for Stabilizer HITACHI ADE-208-024F Z Rev. 6 Sept. 1, 1998 Features • Ultra small Resin Package (URP) is suitable for surface mount design. • These diodes are delivered taped. Ordering Information Type No.
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ADE-208-024F
HZU24B3.
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CA741CE
Abstract: AN6525 HI3306 ms001-b B6 PH Zener diode
Text: HI3306 6-Bit, 15 MSPS, Flash A/D Converter December 1997 Features Description • CMOS Low Power Typ . . . . . . . . . . . . . . . . . . . . .55mW The HI3306 family are CMOS parallel (FLASH) analog-todigital converters designed for applications demanding
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HI3306
HI3306
15MHz,
15MHz
CA741CE
AN6525
ms001-b
B6 PH Zener diode
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VRE302-6A
Abstract: VRE302-6B VRE302-6C VRE302-6J VRE302-6K VRE302-6L
Text: VRE302-6 Low Cost Precision Reference THALER CORPORATION • 2015 N. FORBES BOULEVARD • TUCSON, AZ. 85745 • 520 882-4000 FEATURES • 2.048 V OUTPUT ± 0.205 mV (.01%) PIN CONFIGURATION • TEMPERATURE DRIFT: 0.6 ppm/°C • LOW NOISE: 1.5µV p-p (0.1-10Hz)
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VRE302-6
1-10Hz)
VRE302-6
VRE302-6DS
VRE302-6A
VRE302-6B
VRE302-6C
VRE302-6J
VRE302-6K
VRE302-6L
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VRE306
Abstract: VRE306A VRE306C VRE306J VRE306K VRE306L IN 965 b zener diode
Text: VRE306 Low Cost Precision Reference THALER CORPORATION • 2015 N. FORBES BOULEVARD • TUCSON, AZ. 85745 • 520 882-4000 FEATURES • 6.000 V OUTPUT ± 0.600 mV (.01%) PIN CONFIGURATION • TEMPERATURE DRIFT: 0.6 ppm/°C • LOW NOISE: 4µV p-p (0.1-10Hz)
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VRE306
1-10Hz)
VRE306
VRE306DS
VRE306A
VRE306C
VRE306J
VRE306K
VRE306L
IN 965 b zener diode
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Untitled
Abstract: No abstract text available
Text: STP16NK60Z - STB16NK60Z-S STW16NK60Z N-CHANNEL 600V - 0.38Ω - 14A TO-220 / I2SPAK / TO-247 Zener-Protected SuperMESH MOSFET PRELIMINARY DATA TYPE STP16NK60Z STB16NK60Z-S STW16NK60Z • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 600 V 600 V 600 V < 0.42 Ω
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STP16NK60Z
STB16NK60Z-S
STW16NK60Z
O-220
O-247
STP16NK60Z
O-220
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ca3306
Abstract: CA3300 CA741CE 7406 truth table B6 PH Zener diode 74LS04 AN6525 B12 2N DIODE CMOS 4049 internal circuit CA3306A
Text: CA3306, CA3306A, CA3306C 6-Bit, 15 MSPS, Flash A/D Converters August 1997 Features Description • • • • • • The CA3306 family are CMOS parallel FLASH analog-to-digital converters designed for applications demanding both low power consumption and high speed digitization. Digitizing at 15MHz, for
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CA3306,
CA3306A,
CA3306C
CA3306
15MHz,
15MHz
CA3300
CA3300
CA741CE
7406 truth table
B6 PH Zener diode
74LS04
AN6525
B12 2N DIODE
CMOS 4049 internal circuit
CA3306A
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CA741CE
Abstract: CA3300 CA3306 FN3102 CA3306E CD74HC405 AN6525 CA3306A CA3306C CA3306CD
Text: CA3306, CA3306A, CA3306C TM 6-Bit, 15 MSPS, Flash A/D Converters August 1997 Features Description • CMOS Low Power with Video Speed Typ . . . . . 70mW The CA3306 family are CMOS parallel (FLASH) analog-to-digital converters designed for applications demanding both low power
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CA3306,
CA3306A,
CA3306C
CA3306
15MHz,
15MHz
CA741CE
CA3300
FN3102
CA3306E
CD74HC405
AN6525
CA3306A
CA3306C
CA3306CD
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26nm60
Abstract: W26NM60 STW26NM60 w26nm60 equivalent U26NM60 26nm60 EQUIVALENT STU26NM60 Zener Diodes 300v STU26NM60I "26nm60"
Text: STW26NM60 STU26NM60, STU26NM60I N-CHANNEL 600V - 0.125Ω - 26A TO-247,Max220,Max220I Zener-Protected MDmesh Power MOSFET n n n n n TYPE VDSS RDS on ID STW26NM60 STU26NM60 STU26NM60I 600 V 600 V 600 V < 0.135 Ω < 0.135 Ω < 0.135 Ω 30 A 26 A 26 A
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STW26NM60
STU26NM60,
STU26NM60I
O-247
Max220
Max220I
STU26NM60
O-247
26nm60
W26NM60
STW26NM60
w26nm60 equivalent
U26NM60
26nm60 EQUIVALENT
STU26NM60
Zener Diodes 300v
STU26NM60I
"26nm60"
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Untitled
Abstract: No abstract text available
Text: HI3306 HARRIS S E M I C O N D U C T O R 6-Bit, 15 MSPS, Flash A/D Converter August 1997 Description Features CMOS Low Power Typ . 55mW Parallel Conversion Technique Single Power Supply V oltage.3V to 7.5V
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HI3306
15MHz
HI3306JIP/10.
HI3306JIB/15.
HI3306JIB/10.
HI3306
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CA3306
Abstract: CA3300 13b1 zener
Text: f f l H U U S E M I C O N D U C T O R A R R CA3306 IS CMOS Video Speed 6-Bit Flash A/D Converter December 1993 Features Description • CMOS Low Power w ith Video Speed 70m W Typ. The CA3306 family are CMOS parallel (FLASH) analog-to-digital converters designed for applications demanding both low power
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CA3306
CA3306
15MHz,
CA3300
CA3306,
CA3306A,
13b1 zener
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Untitled
Abstract: No abstract text available
Text: h a r r is S E M C O N D U C T O R CA 3306, C A 3306A , C A3306C 6-Bit, 1 5 M S P S , Flash A/D C onverters August 1997 Features Description • CMOS Low Power with Video Speed T y p 70mW • Parallel Conversion Technique • Signal Power Supply V o ltage.3V to 7.5V
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A3306C
15MHz
CA3306
15MHz,
CA3306,
CA3306A,
CA3306C
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VRE310L
Abstract: VRE310 VRE310A VRE310B VRE310C VRE310J VRE310K
Text: VRE310 Low Cost Precision Reference THALER CORPORATION • 2015 N. FORBES BOULEVARD • TUCSON, AZ. 85745 • 520 882-4000 FEATURES • 10.000 V OUTPUT ± 1.000 mV (.01%) PIN CONFIGURATION • TEMPERATURE DRIFT: 0.6 ppm/°C • LOW NOISE: 6µV p-p (0.1-10Hz)
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VRE310
1-10Hz)
VRE310
VRE310DS
VRE310L
VRE310A
VRE310B
VRE310C
VRE310J
VRE310K
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Untitled
Abstract: No abstract text available
Text: ££! H A R R IS HI3306 SEMI CONDUCTOR Aprii 1996 C M O S 6 - B it F la s h A /D C o n v e r te r Features Description • CMOS Low Power Typ . 55mW The HI3306 family are CMOS parallel (FLASH) analog-todigital converters designed for applications demanding both
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HI3306
HI3306
15MHz,
1-800-4-HARRIS
00bb53S
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zener diode rd20e b2
Abstract: diode zener 1N 398 zener diode B3 Zener Diode B1 9 zener diode rd13e zener diode B5 RD6.2E zener diode rd39e b5 RD6.8E NEC Zener diode RD3.0E
Text: DATA SHEET ZENER DIODES RD2.0E to RD200E 500 mW DHD ZENER DIODE DO-35 NEC Type RD2.0E to RD200E Series are planar type zener diode in the PACKAGE DIMENSIONS (in millimeters) popular DO-35 package with DHD (Double Heatsink Diode) construction φ 0.5 25 MIN.
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RD200E
DO-35)
RD200E
DO-35
RD130E
RD200E:
RD39E
zener diode rd20e b2
diode zener 1N 398
zener diode B3
Zener Diode B1 9
zener diode rd13e
zener diode B5
RD6.2E
zener diode rd39e b5
RD6.8E
NEC Zener diode RD3.0E
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ca3306
Abstract: CA3300 8 bit full adder 74 30Mhz oscilloscope CA3306M
Text: CA3306, CA3306A, CA3306C 6-Bit, 15 MSPS, Flash A/D Converters August 1997 Description Features • CMOS Low Power with Video Speed T y p The CA3306 family are CMOS parallel (FLASH) analog-to-digital converters designed for applications demanding both low power
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OCR Scan
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CA3306,
CA3306A,
CA3306C
CA3306
15MHz,
CA3300
8 bit full adder 74
30Mhz oscilloscope
CA3306M
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B1 6 zener
Abstract: b3 zener B2 Zener B2 marking code Zener zener b2 B1 2 zener 22 B2 zener 30 B2 zener diode b3 zener 815 zener
Text: ADE-208-124 Z HZS-N Series Silicon Epitaxial Planar Zener Diodes for Stabilized Power Supply Preliminary Rev. 0 Aug. 1993 Outline • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc.
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ADE-208-124
DO-34
B1 6 zener
b3 zener
B2 Zener
B2 marking code Zener
zener b2
B1 2 zener
22 B2 zener
30 B2 zener
diode b3 zener
815 zener
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2.0 B1 zener
Abstract: B1 6 zener zener B2 B2 marking code Zener zener B2 12 Zener B1 30 B2 zener zener Marking b2 15 B2 Zener HZS13N
Text: HZS-N Series Silicon Epitaxial Planar Zener Diodes for Stabilized Power Supply ADE-208-124 Z Rev. 0 Features • Low leakage, low zener impedance and maximum power dissipation of 400mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.88V through 38.52V of zener voltage provide flexible application.
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ADE-208-124
400mW
DO-34
2.0 B1 zener
B1 6 zener
zener B2
B2 marking code Zener
zener B2 12
Zener B1
30 B2 zener
zener Marking b2
15 B2 Zener
HZS13N
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B1 6 zener
Abstract: B1 7 zener zener B1 6 B2 Zener 3 B2 marking code Zener 2.0 B1 zener zener B2 12 Hitachi DSA002711 30 B2 zener HZS2.7N
Text: HZS-N Series Silicon Epitaxial Planar Zener Diodes for Stabilized Power Supply ADE-208-124 Z Preliminary Rev. 0 Aug. 1993 Features • Low leakage, low zener impedance and maximum power dissipation of 400mW are ideally suited for stabilized power supply, etc.
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ADE-208-124
400mW
DO-34
B1 6 zener
B1 7 zener
zener B1 6
B2 Zener 3
B2 marking code Zener
2.0 B1 zener
zener B2 12
Hitachi DSA002711
30 B2 zener
HZS2.7N
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