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    ZENER DIODE ITT Search Results

    ZENER DIODE ITT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    ZENER DIODE ITT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sc6202

    Abstract: SC-6202 ZENER DIODE 2A MARKING DL 2SD2167 T100
    Text: 2SD2167 Power Transistor 31±4V, 2A 2SD2167 •Features 1) Built-in zener diode between collector and base. 2) Zener diode has low voltage dispersion. 3) Strong protection against reverse power surges due


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    PDF 2SD2167 40x40x0 SC-62 /50mA 30MHz sc6202 SC-6202 ZENER DIODE 2A MARKING DL 2SD2167 T100

    2A 5v ZENER DIODE

    Abstract: 2sd2170 T100 marking DM zener diode transistor collector diode protection SC-62 EIAJ
    Text: 2SD2170 Transistors_ Medium Power Transistor Motor, Relay drive (903, 2A) 2SD2170 •Features 1) Built-in zener diode between collector and base. 2) Zener diode has low dispersion. 3) Strong protection against reverse power surges due to


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    PDF 2SD2170 SC-62 30MHz 2A 5v ZENER DIODE 2sd2170 T100 marking DM zener diode transistor collector diode protection SC-62 EIAJ

    2SC5060

    Abstract: 2SC5060 equivalent transistor 2sc5060 2sg50
    Text: 2SC5060 Transistor, NPN, Darlington Features Dimensions Units : mm • • • • • • available in ATV TV 2 package built-in 90 ±10 V Zener diode between collector and base low Zener voltage fluctuation highly resistant to surge damper diode incorporated


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    PDF 2SC5060 2SG5060 2SC5060 2SC5060 equivalent transistor 2sc5060 2sg50

    in5349b

    Abstract: IN5339B IN5378B IN5343b in5364B in5378b ZENER DIODE IN5358B IN5378 IN5339B diode IN5357B
    Text: ITTIMK-J 1N5333B Microsemi Corp. 1N5388B th ru SILICON 5 WATT ZENER DIODE FEATURES • ZENER VOLTAGE 3.3V to 200V • HIGH SURGE CURRENT C A P A B IL IT Y • AVAILABLE IN ± 5, ± 10 or ± 2 0 % TOLERANCES Note 1 MAXIMUM RATINGS O perating T em perature: —65°C to + 2 0 0 °C


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    PDF 1N5333B 1N5388B in5349b IN5339B IN5378B IN5343b in5364B in5378b ZENER DIODE IN5358B IN5378 IN5339B diode IN5357B

    2SD2010

    Abstract: No abstract text available
    Text: 2SD2010 Transistor, NPN, Darlington Features Dimensions Units : mm • available in MRT package • built-in 60 V Zener diode between collector and base • resistant to surges • damper diode incorporated j_o • built-in resistors between base and emitter


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    PDF 2SD2010 2SD2010, 2SD2010

    2SC5576

    Abstract: No abstract text available
    Text: 2SC5576 Medium Power Transistor Motor or Relay drive (60±10V, 4A) 2SC5576 •Features 1) Built-in zener diode between collector and base. 2) Strong protection against reverse power surges due to


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    PDF 2SC5576 100ms 30MHz 2SC5576

    ZPD 5.1 ITT

    Abstract: ZPD ITT diode zener ZD 88 germanium BYY32 germanium transistor CJ 4148 ZENER BAW21 ITT ZPD 11 itt germanium diode
    Text: General Information Germanium Gold Bonded Diodes Silicon Diodes Silicon Capacitance Diodes Silicon Diode Switches PIN Diodes Silicon Zener Diodes and Temperature Compensated Stabilizing Circuits Silicon Stabilizer Diodes Light Emitting Diodes Silicon Rectifiers


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    PDF F-92223 D-7800 ZPD 5.1 ITT ZPD ITT diode zener ZD 88 germanium BYY32 germanium transistor CJ 4148 ZENER BAW21 ITT ZPD 11 itt germanium diode

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


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    PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    zener diode c 531

    Abstract: 20kv diode 6N diode zener diode array IEC1000-4-2 zener diode 531 2.5kV ZENER DIODE
    Text: STZ5.6N Diodes_ Zener Diode Array STZ5.6N •Applications Constant voltage control For the ESD measure of a signal line •External dimensions Units : mm •Features 1) Designed for mounting on small surface areas 2) High reliability


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    PDF SC-59 200pFÂ 150pF zener diode c 531 20kv diode 6N diode zener diode array IEC1000-4-2 zener diode 531 2.5kV ZENER DIODE

    marking lt

    Abstract: 2SD2028 IC 2803
    Text: Ordering number: EN 2803 No.2803 // 2SD2028 NPN Epitaxial Planar Silicon Transistor Low-Frequency Power Amp Applications Features - With Zener diode 11 ± 3V between collector and base - Large current capacity •Low collector to emitter saturation voltage


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    PDF 2SD2028 2SD2028-applied marking lt IC 2803

    2SD1866

    Abstract: 2SD2143 2SD2212 2SD2397 T100
    Text: 2SD2212 / 2SD2143 / 2SD1866 / 2SD2397 Transistors Medium Power Transistor Motor, Relay drive (60+1OV, 2A) 2SD2212 / 2SD2143 / 2SD1866 / 2SD2397 •Features 1) Built-in zener diode between collector and base. 2) Strong protection against reverse surges due to "L"


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    PDF 2SD2212 2SD2143 2SD1866 2SD2397 2SD221212SD214312SD186612SD2397 2SD2212 2SD1866 O-22QFN 2SD2397 T100

    Untitled

    Abstract: No abstract text available
    Text: ATEI HDR2606 2 VA Output, Microprocessor Compatible 16-bit Digital-to-Resolver Converter Features • Fully protected 2 VA output current limiting (short circuit proof) (voltage feedback transients) • Optional Zener Diode output (additional protection against inductive


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    PDF HDR2606 16-bit 16-bit) MIL-STD-883

    Pulsating

    Abstract: 1H5011 2SD412 amplifier 2606 LSE B3 transformer natel engineering 15-V 74LS138 74LS163 HDR2606-14S
    Text: ATEL HDR2606 2 VA Output, Microprocessor Compatible 16-bit Digital-to-Resolver Converter Features ¿¿*55 • Fully protected 2 VA output current limiting (short circuit proof) (voltage feedback transients) ôri3 006391 tM • Optional Zener Diode output


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    PDF HDR2606 16-bit 16-bit) MIL-STD-883B 395/USA/single HDR2606-14S) Pulsating 1H5011 2SD412 amplifier 2606 LSE B3 transformer natel engineering 15-V 74LS138 74LS163 HDR2606-14S

    2SD1701

    Abstract: PA33
    Text: NEC DESCRIPTION NPN SILICON TRANSISTOR 2SD1701 The 2SD1701 is NPN silicon epitaxial darlington transistor designed fo r pulse m otor driver, printer driver, solenoid driver. FEATURES • High DC Current gain. • Zener Diode between Collector and Base fo r Absorbing


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    PDF 2SD1701 2SD1701 PA33

    diode zener c25

    Abstract: IGBT FF 300
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MMG05N60D Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This IGBT contains a built-in free wheeling diode and a gate protection zener diodes. Fast switching characteristics result in


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    PDF OT223) MMG05N60D 318E-04 0E-05 0E-04 4-T19 diode zener c25 IGBT FF 300

    ic 2028

    Abstract: 2028b IC 2803
    Text: ¡^Ordering num ber: EN 2803 2SD2028 No.2803 NPN Epitaxial P lana r Silicon T ransistor Low-Frequency Power Amp A pplications F eatures • With Zener diode 11 ± 3V between collector and base •Large cu rren t capacity ■Low collector to em itter satu ra tio n voltage


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    PDF 2SD2028 2SD2028-applied 2SD2028 44-fiJS D148MO ic 2028 2028b IC 2803

    Untitled

    Abstract: No abstract text available
    Text: Ordering num ber: EN 3196 2SD2176 No.3196 i SA\YO NPN Epitaxial Planar Silicon Transistor Motor Driver Applications F eatures • Darlington connection • On-chip zener diode of 60 ± 10V between collector and base • High inductive load handling capability


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    PDF 2SD2176 250mm2 7149MO

    Untitled

    Abstract: No abstract text available
    Text: HITACHI 2SD2263-Silicon NPN Epitaxial Low Frequency Power Amplifier Features TO-92 1 • Build in zener diode for surge absorb. • Suitable for relay drive with small power loss. Table 1 Absolute M aximum Ratings (Ta = 25°C) Item Symbol Rating


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    PDF 2SD2263-------------Silicon 2SD2263

    Untitled

    Abstract: No abstract text available
    Text: 2SD1976 Silicon NPN Triple Diffused HITACHI Application High voltage switching, igniter Feature • Built-in High voltage zener diode 300 V • High Speed switching Outline TO -220A B 2SD1976 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Rating Collector to base voltage


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    PDF 2SD1976 -220A

    Untitled

    Abstract: No abstract text available
    Text: 2SD1976 Silicon NPN Triple Diffused HITACHI Application High voltage switching, igniter Feature • Built-in High voltage zener diode 300 V • High Speed switching Outline T O -2 2 0 A B 2SD1976 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Rating


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    PDF 2SD1976 D-85622

    Untitled

    Abstract: No abstract text available
    Text: 2SD1976 Silicon NPN Triple Diffused HITACHI Application High voltage switching, igniter Feature • Built-in High voltage zener diode 300 V • High Speed switching Outline TO -220AB 2SD1976 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit Collector to base voltage


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    PDF 2SD1976 -220AB

    DARLINGTON TRANSISTOR ARRAYS 2A

    Abstract: PU4422 PU3122 PU4122
    Text: Power Transistor Arrays PU3122, PU4122, PU4422 PU3122, PU4122, PU4422 Package Dimensions PU3122 Silicon NPN Triple-Diffused Planar Darlington Type Power Amplifier, Switching • Features • • • • • • • Built-in 30V Zener diode b etw een C and B


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    PDF PU3122, PU4122, PU4422 200mJ PU3122: PU4122: DARLINGTON TRANSISTOR ARRAYS 2A PU4422 PU3122 PU4122

    Untitled

    Abstract: No abstract text available
    Text: Panasonic Transistor 2SD2416 Silicon NPN epitaxial planer type darlington For low -frequency am plification Unit: mm 4 . 5+ 0.1 • Features • • • • High foward current transfer ratio hpe. 60V zener diode built in between collector and base. Darlington connection.


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    PDF 2SD2416 -50mA, 200MHz

    2SC4674

    Abstract: No abstract text available
    Text: 2SD2170 2SC4574 Transistors I Medium Power Transistor Motor or Relay drive 2SD 2170 •F e a tu re s 1) 2) 3) 4) 5) 6) •A b s o lu te maximum ratings (T a = 2 5 ”C ) Built-in zener diode between collector and base. Z ener diode has low dispersion. Strong protection against reverse pow er surges due to low loads.


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    PDF 2SD2170 2SC4574 94L-686-D 2SC4674