BH6799
Abstract: BH6799FVM BD698 BD6989
Text: TECHNICAL NOTE DC Brushless Motor Driver Series for Cooling Fans Low-voltage Single-phase Full-wave DC Brushless Fan Motor Drivers BH6766FVM, BD6989FVM, BH6799FVM, BH6789FVM ●Description This is the summary of models that suit for notebook PC cooling fan. They employ Bi-CMOS and Bi-CDMOS process, and
|
Original
|
PDF
|
BH6766FVM,
BD6989FVM,
BH6799FVM,
BH6789FVM
BD6989FVMBH6799FVMBH6789FVM)
BD6989FVMBH6799FVMBH6766FVM)
BH6789FVM)
BH6799
BH6799FVM
BD698
BD6989
|
sj 2258
Abstract: No abstract text available
Text: 2SK1822-01 MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIIA SERIES • Features • High current • Low on-resistance • No secondary breakdown • Low driving power • High forward Transconductance • A ve lanche-proof • Including G-S Zenner diode
|
OCR Scan
|
PDF
|
2SK1822-01
sj 2258
|
1823-01R
Abstract: 2SK1823-01R T151 FA-MT A2260
Text: 2SK1823-01R FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIIA SERIES I Features Outline Drawings ►High current ►-ow on-resistance ►slo secondary breakdown ►.ow driving power ►High forward Transconductance ►\valanche-proof ►ncluding G-S Zenner diode
|
OCR Scan
|
PDF
|
2SK1823-01R
1823-01R
2SK1823-01R
T151
FA-MT
A2260
|
FA 23 zenner
Abstract: A2466 DO810 2SK2259-01MR K2259 bojk
Text: 2SK2259-01MR FUJI PO W ER M O S-F ET N-OHANNEL SILICON POWER MOS-FET FAP-IIIA SERIES Outline Drawings I Features »High current »Low on-resistance »Mo secondary breakdown »Low driving power 1h igh forward Transconductance 'Avalanche-proof 'Including G-S Zenner diode
|
OCR Scan
|
PDF
|
2SK2259-01
FA 23 zenner
A2466
DO810
2SK2259-01MR
K2259
bojk
|
LTTG
Abstract: EM 257
Text: 4 4 ^ 2 0 5 0 G13 D35 245 • H I T 4 2SK318— HI TA CHI/ OP TO ELE CTR ON ICS blE » SILICON N-CHANNEL MOS FET H F /V H F POWER AMPLIFIER ■ FEATURES • High Breakdown Voltage. • You Can Decrease Handling Current. • Gate is Protected by Zenner Diodes.
|
OCR Scan
|
PDF
|
2SK318--
44Tb2G5
0D13D3L.
LTTG
EM 257
|
2SK317
Abstract: 2sk317 hitachi J-D4A rfpak zenner 10v D013Q3M
Text: • 2SK317 44‘ìbBDS 0013033 47S « H I T H blE J> HIT AGHI/ OPTOELECTRONICS SILICON N-CHANNEL MOS FET H F /V H F POWER AMPLIFIER ■ FEATURES • High Breakdown Voltage. • You Can Decrease Handling Current. • Gate is Protected by Zenner Diodes. •
|
OCR Scan
|
PDF
|
2SK317
D013Q3M
2SK317
2sk317 hitachi
J-D4A
rfpak
zenner 10v
|
K2259
Abstract: 2SK2259-01M 2SK2259-01MR T151 FA 23 zenner A2466
Text: 2SK2259-01MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIIA SERIES Outline Drawings • Features • High current • Low on-resistance • Mo secondary breakdown • Low driving power • h igh forward Transconductance • Avalanche-proof • Including G-S Zenner diode
|
OCR Scan
|
PDF
|
2SK2259-01MR
SC-67
ilif1115
891-gMSB
K2259
2SK2259-01M
2SK2259-01MR
T151
FA 23 zenner
A2466
|
H150
Abstract: No abstract text available
Text: 2SK1822-01 MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-IHA SERIES • Features Outline Drawings • High current • Low on-resistance • No secondary breakdown • Lovv driving power • High forward Transconductance • Avc lanche-proof • Including G-S Zenner diode
|
OCR Scan
|
PDF
|
2SK1822-01
SC-67
H150
|
2SK318
Abstract: No abstract text available
Text: 44^205 2SK318- 0013D35 245 • HIT4 HITACHI/ OPTOELECTRONICS blE D SILICON N-CHANNEL MOS FET H F /V H F POWER AMPLIFIER ■ FEATURES • High Breakdown Voltage. • You Can Decrease Handling Current. • • Gate is Protected by Zenner Diodes. No Secondary-Breakdown.
|
OCR Scan
|
PDF
|
0013D35
l75MH
l75MHi;
2SK318
|
2SK318
Abstract: "beryllium oxide" 20DRAM
Text: 44^205 2SK318- 0013D35 245 • HIT 4 HITACHI/ OPTOELECTRONICS blE D SILICON N-CHANNEL MOS FET H F /V H F POWER AMPLIFIER ■ FEATURES • High Breakdown Voltage. • You Can Decrease Handling Current. • • Gate is Protected by Zenner Diodes. No Secondary-Breakdown.
|
OCR Scan
|
PDF
|
0013D35
l75MH
69inv
l75MHi;
2SK318
"beryllium oxide"
20DRAM
|
2SK317
Abstract: zenner 10v 2sk317 hitachi
Text: • 2SK317 HM'ìtSQS 0013033 47S ■ H I T 4 HI TA G H I / OPTOELECTRONICS LIE lT SILICON N-CHANNEL MOS FET H F /V H F POWER AMPLIFIER ■ FEATURES • • High Breakdown Voltage. You Can Decrease Handling Current. • Gate is Protected by Zenner Diodes.
|
OCR Scan
|
PDF
|
2SK317
D013Q3M
zenner 10v
2sk317 hitachi
|
2SK317
Abstract: HF VHF power amplifier 2sk317 hitachi k317
Text: • 2SK317 4 4 ^ 2 0 5 0013033 472 ■ H I T 4 HITACHI/ OPTOELECTRONICS blE lT SILICON N-CHANNEL MOS FET HF/VHF POWER AMPLIFIER ■ FEATURES • High Breakdown Voltage. • You Can Decrease Handling Current. Gate is Protected by Zenner Diodes. No Secondary-Breakdown.
|
OCR Scan
|
PDF
|
2SK317
100MHz;
I75MH>
2SK317
HF VHF power amplifier
2sk317 hitachi
k317
|
2SK2259-01M
Abstract: 00031b B080
Text: 2SK2259-01M S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET FAP-IIIA SERIES • Features Outline Drawings • High current • Low on-resistance • No secondary breakdown • Low driving power • High forw ard Transconductance
|
OCR Scan
|
PDF
|
2SK2259-01M
SC-67
20Kfi)
00031b
B080
|
Untitled
Abstract: No abstract text available
Text: 2SK1822-01M SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIIA SERIES • Features I Outline Drawings • High current • Low on-resistance b 5*02 • No secondary breakdown 2 7±0 2 • Low driving power • High forward Transconductance
|
OCR Scan
|
PDF
|
2SK1822-01M
SC-67
1822-01M
DDD3112
|
|
|
d25av
Abstract: No abstract text available
Text: 2SK1823-01 SIPMOS F U JI POWER M O S -FET N -C H A N N E L S IL IC O N POW ER M O S -F E T _ - . _ IT I . _ _ _ _ _ _ FAP-IIIA SERIES • Features I Outline Drawings • High current • Low on-resistance • No secondary breakdown
|
OCR Scan
|
PDF
|
2SK1823-01
d25av
|
Untitled
Abstract: No abstract text available
Text: P ^p i GEC P L E S S E Y DS3486-1.2 DC1250/70/80 Series HIGH POWER MICROWAVE GUNN DIODES The D C 1250 S eries are gallium arsenide bulk effect d e vice s fo r the g e nera tion of C W m icrow ave po w e r in the range 4 G H z to 1 8 G H z d e pend ing on the cavity and diodes
|
OCR Scan
|
PDF
|
DS3486-1
DC1250/70/80
DC1280.
500mW
12GHz
|
GUNN DIODE plessey
Abstract: plessey 10 Gunn oscillator plessey 10 GHz Gunn oscillator DC1230 DC1252 DC1280 Gunn Diode DC1281F
Text: 37bfl522 GDIÖS'm b3b « P L S B Si GEC PLESSEY S E M I C O N D U C T O R S DS3486-1.2 DC1250/70/80 Series HIGH POWER MICROWAVE GUNN DIODES The DC1250 Series are gallium arsenide bulk effect devices for the generation of CW microwave power in the range 4GHz to18GHz depending on the cavity and diodes
|
OCR Scan
|
PDF
|
37bfl522
DS3486-1
DC1250/70/80
DC1250
to18GHz
DC1280.
DC1275
26GHz.
500mW
12GHz
GUNN DIODE plessey
plessey 10 Gunn oscillator
plessey 10 GHz Gunn oscillator
DC1230
DC1252
DC1280
Gunn Diode
DC1281F
|
CHN 950
Abstract: chn 630
Text: 2SK1823-01R FUJI P O W E R M O S - F E T N-CHANNEL SILICON POWER MOS-FET _ _ _ - FAP-IHA SERIES • Features Outline Drawings • High current • -ow on-resistance • Mo secondary breakdown • .ow driving power • High forward Transconductance
|
OCR Scan
|
PDF
|
2SK1823-01R
CHN 950
chn 630
|
Untitled
Abstract: No abstract text available
Text: 2SK2166-01R FUJI POWER M OS-FET N-OHANIMEL SILICON POWER MOS-FET - F A P - I I I A S E R I E S • reatures Outline Drawings • I- igh cu rre n t • L dw on-resistance • f\o secondary breakdown • L jw d riving p o w e r
|
OCR Scan
|
PDF
|
2SK2166-01R
|
oms 450
Abstract: 2SK2166-01 2SK2166-01R H150
Text: 2 S K 2 1 6 6 - 1 FUJI PO W ER M O S-F ET R N-OHANNEL SILICON POWER MOS-FET FAP-IIIA SERIES • =eatures Outline Drawings • I- igh current • L dw on-resistance • Fso secondary breakdown • L:>w driving power • High forward Transconductance • /Walanche-proof
|
OCR Scan
|
PDF
|
2SK2166-01R
oms 450
2SK2166-01
2SK2166-01R
H150
|
A2305
Abstract: A2306 2SK1969-01 ZENNER A2 SC-65 2SK1969
Text: 2SK1969-01 FUJI POW ER M OS-FET N-CHANNEL SILICON POWER MOS-FET F A P -IIIA S E R I E S O utline D raw ings I F e a tu r e s *Hig i current ' Low on-resistance 'N o secondary breakdown ' L o v driving power »Hig i forward Transconductance 'Avalanche-proof
|
OCR Scan
|
PDF
|
2SK1969-01
SC-65
20Kil)
A2305
A2306
2SK1969-01
ZENNER A2
SC-65
2SK1969
|
CQ 419
Abstract: oms 450 ifr mosfet 2SK2165-01 SC-65 2SK2165
Text: 2SK2165-01 FUJI PO W ER M O S-F E T N-CHANNEL SILICON POWER MOS-FET FAP-IIIA SERIES • Features Outline Drawings • Hiiih current • Low on-resistance • No secondary breakdown • Low driving power • Hicjh forward Transconductance • Avalanche-proof
|
OCR Scan
|
PDF
|
2SK2165-01
SC-65
CQ 419
oms 450
ifr mosfet
2SK2165-01
SC-65
2SK2165
|
AE 1600-S
Abstract: No abstract text available
Text: 2SK2165-01 FUJI P O W E R M O S - F E T N-CHANNEL SILICON POWER MOS-FET F A P -IIIA S E R IE S • Features ■ Outline Drawings • Hie|h current • Low on-resistance • No secondary breakdown • Low driving power • Hitjh forward Transconductance • Avulanche-proof
|
OCR Scan
|
PDF
|
2SK2165-01
AE 1600-S
|
a2305
Abstract: A2307 2sk1969 N CH MOSFET
Text: 2SK1969-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET _ -FAP-IIIA SERIES • Features IOutline Drawings • Hig i current • Low on-resistance • No secondary breakdown • L o v driving power • H ig i forward Transconductance
|
OCR Scan
|
PDF
|
2SK1969-01
a2305
A2307
2sk1969
N CH MOSFET
|
