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    ZETEX MEDIUM POWER COMPLEMENTARY TRANSISTORS Search Results

    ZETEX MEDIUM POWER COMPLEMENTARY TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    ZETEX MEDIUM POWER COMPLEMENTARY TRANSISTORS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    complementary npn-pnp

    Abstract: dual npn 500ma NPN SOT23-6 Surface mount NPN/PNP complementary transistor transistor Ic 1A datasheet NPN ZXTD4591E6 ZXTD4591E6TA ZXTD4591E6TC 4591 DSA003748
    Text: ZXTD4591E6 DUAL 60V NPN/PNP SILICON MEDIUM POWER TRANSISTORS SUMMARY NPN: VCEO=60V; IC= 1A; hFE=100-300 PNP: VCEO=-60V; IC= -1A; hFE=100-300 DESCRIPTION Complementary NPN and PNP medium power transistors packaged in the 6 lead SOT23 package. SOT23-6 FEATURES


    Original     		PDF ZXTD4591E6 OT23-6 OT23-6 ZXTD4591E6TA complementary npn-pnp dual npn 500ma NPN SOT23-6 Surface mount NPN/PNP complementary transistor transistor Ic 1A datasheet NPN ZXTD4591E6 ZXTD4591E6TA ZXTD4591E6TC 4591 DSA003748

    Untitled

    Abstract: No abstract text available
    Text: ZXTD4591E6 DUAL 60V NPN/PNP SILICON MEDIUM POWER TRANSISTORS SUMMARY NPN: VCEO=60V; IC= 1A; hFE=100-300 PNP: VCEO=-60V; IC= -1A; hFE=100-300 DESCRIPTION Complementary NPN and PNP medium power transistors packaged in the 6 lead SOT23 package. SOT23-6 FEATURES


    Original     		PDF ZXTD4591E6 OT23-6 OT23-6 ZXTD459Fax:

    Untitled

    Abstract: No abstract text available
    Text: ZXTC2061E6 12V, SOT23-6, complementary medium power transistors Summary BVCEO > 12 -12 V hFE > 500 IC(cont) = 5 (-3.5)A VCE(sat) < 35 (-70)mV @ 1A RCE(sat) = 25 (45)m⍀ PD = 1.1W Description C1 Advanced process capability has been used to achieve this high performance device.


    Original     		PDF ZXTC2061E6 OT23-6, OT23-6 ZXTC2061E6mbH D-81541

    complementary npn-pnp power transistors

    Abstract: ZETEX medium power complementary transistors TS16949 ZXTC2061E6 ZXTC2061E6TA NPN SOT23-6 RCE SOT23-6
    Text: ZXTC2061E6 12V, SOT23-6, complementary medium power transistors Summary BVCEO > 12 -12 V hFE > 500 IC(cont) = 5 (-3.5)A VCE(sat) < 35 (-70)mV @ 1A RCE(sat) = 25 (45)m⍀ PD = 1.1W Description C1 Advanced process capability has been used to achieve this high performance device.


    Original     		PDF ZXTC2061E6 OT23-6, OT23-6 ZXTC2061E6TA D-81541 complementary npn-pnp power transistors ZETEX medium power complementary transistors TS16949 ZXTC2061E6 ZXTC2061E6TA NPN SOT23-6 RCE SOT23-6

    TS16949

    Abstract: ZXTC2063E6 ZXTC2063E6TA SOT23-6 MARKING 57 NPN SOT23-6
    Text: ZXTC2063E6 40V, SOT23-6, complementary medium power transistors Summary BVCEO > 40 -40 V BVECO > 6 (-3)V IC(cont) = 3.5 (-3)A VCE(sat) < 60 (-90)mV @ 1A RCE(sat) = 38 (58)m⍀ PD = 1.1W Description C1 Advanced process capability has been used to achieve this high performance device. Combining NPN and PNP


    Original     		PDF ZXTC2063E6 OT23-6, OT23-6 ZXTC2063E6TA D-81541 TS16949 ZXTC2063E6 ZXTC2063E6TA SOT23-6 MARKING 57 NPN SOT23-6

    T6702

    Abstract: complementary npn-pnp ZDT6702 IC1010 IC-175 DSA003725 ZETEX medium power complementary transistors
    Text: SM-8 COMPLEMENTARY MEDIUM POWER DARLINGTON TRANSISTORS ZDT6702 ISSUE 2 – February 1997 C1 B1 C1 E1 C2 B2 C2 E2 NPN PNP SM-8 8 LEAD SOT223 PARTMARKING DETAIL – T6702 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL NPN PNP UNIT Collector-Base Voltage VCBO 80


    Original     		PDF ZDT6702 OT223) T6702 T6702 complementary npn-pnp ZDT6702 IC1010 IC-175 DSA003725 ZETEX medium power complementary transistors

    Untitled

    Abstract: No abstract text available
    Text: SM-8 COMPLEMENTARY MEDIUM POWER DARLINGTON TRANSISTORS ZDT6702 ISSUE 2 – February 1997 C1 B1 C1 E1 C2 B2 C2 E2 NPN PNP SM-8 8 LEAD SOT223 PARTMARKING DETAIL – T6702 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL NPN PNP Collector-Base Voltage VCBO 80 -80 V


    Original     		PDF ZDT6702 OT223) T6702

    Untitled

    Abstract: No abstract text available
    Text: ZXTC2062E6 20V, SOT23-6, complementary medium power transistors Summary BVCEO > 20 -20 V BVECO > 5 (-4)V IC(cont) = 4 (-3.5)A VCE(sat) < 50 (-65)mV @ 1A RCE(sat) = 35 (54)m⍀ PD = 1.1W Description C1 Advanced process capability has been used to achieve this high performance device.


    Original     		PDF ZXTC2062E6 OT23-6, OT23-6 ZXTC2062E6TA D-81541

    ZXTC2062E6

    Abstract: TS16949 ZXTC2062E6TA E2 SOT23 complementary npn-pnp power transistors NPN SOT23-6 sot23 npn-pnp
    Text: ZXTC2062E6 20V, SOT23-6, complementary medium power transistors Summary BVCEO > 20 -20 V BVECO > 5 (-4)V IC(cont) = 4 (-3.5)A VCE(sat) < 50 (-65)mV @ 1A RCE(sat) = 35 (54)m⍀ PD = 1.1W Description C1 Advanced process capability has been used to achieve this high performance device.


    Original     		PDF ZXTC2062E6 OT23-6, OT23-6 ZXTC2062E6TA D-81541 ZXTC2062E6 TS16949 ZXTC2062E6TA E2 SOT23 complementary npn-pnp power transistors NPN SOT23-6 sot23 npn-pnp

    AEC-Q101

    Abstract: transistor bipolar 500ma DPBT8105 ZETEX complementary transistor PRODUCT LINE DN350T05 DNBT8105 Bipolar Transistor npn sot23 TRANSISTOR npn ic 1000ma DP350T05 FMMT591
    Text: New Product Announcement March 7, 2006 Announcing Expansion of SOT-23 Bipolar Transistor Product Line for High-Voltage and Medium Power Applications A SOT-23 B E Dim C D G H K J D M L Product Highlights Min Max 0.37 0.51 A 1.20 1.40 B 2.30 2.50 C 0.89 1.03


    Original     		PDF OT-23 OT-23 DN350T05 DP350T05 DN350T05 AEC-Q101 transistor bipolar 500ma DPBT8105 ZETEX complementary transistor PRODUCT LINE DNBT8105 Bipolar Transistor npn sot23 TRANSISTOR npn ic 1000ma DP350T05 FMMT591

    bipolar junction transistor

    Abstract: FZT953 DZT3150 DZT853 DZT953 Bipolar Junction Transistor npn DZT851 DZT951 NPN medium power transistor in a SOT package 100V transistor npn 5a
    Text: New Product Announcement February 23, 2007 Announcing Medium Power SOT-223 Bipolar Junction Transistor Product Line Product Highlights DZT851, DZT853, DZT951, DZT953 • Single Transistors in SOT-223 Package • Highest Collector Current Rating Among Diodes, Inc.’s Bipolar Junction Transistor Product


    Original     		PDF OT-223 DZT851, DZT853, DZT951, DZT953 OT-223 DZT851 DZT951 DZT853 bipolar junction transistor FZT953 DZT3150 DZT853 DZT953 Bipolar Junction Transistor npn DZT851 DZT951 NPN medium power transistor in a SOT package 100V transistor npn 5a

    complementary npn-pnp power transistors

    Abstract: sot23 npn-pnp SOT23-6, complementary medium power transistors SOT23-6, complementary transistors
    Text: A Product Line of Diodes Incorporated ZXTC2061E6 12V, SOT23-6, complementary medium power transistors Summary BVCEO > 12 -12 V hFE > 500 IC(cont) = 5 (-3.5)A VCE(sat) < 40 (-70)mV @ 1A RCE(sat) = 25 (45)m⍀ PD = 1.1W Description C1 Advanced process capability has been used to


    Original     		PDF ZXTC2061E6 OT23-6, OT23-6 ZXTC2061E6TA D-81541 complementary npn-pnp power transistors sot23 npn-pnp SOT23-6, complementary medium power transistors SOT23-6, complementary transistors

    BZX85C12V

    Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
    Text: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes


    Original     		PDF DO-15 DO-201AD O-220AC T0202-3 STGP3NB60HD* STGP7NB60HD* STGP3NB60HD STGP7NB60HD BZX85C12V TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E

    DIODES 11W

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTC2063E6 40V, SOT23-6, complementary medium power transistors Summary BVCEO > 40 -40 V BVECO > 6 (-3)V IC(cont) = 3.5 (-3)A VCE(sat) < 60 (-90)mV @ 1A RCE(sat) = 38 (58)m⍀ PD = 1.1W Description C1 Advanced process capability has been used to achieve


    Original     		PDF ZXTC2063E6 OT23-6, OT23-6 ZXTC20: D-81541 DIODES 11W

    shockley diode application

    Abstract: shockley diode transistor bipolar driver schematic diode shockley shockley diode SPICE MODELS spice shockley diode SPICE MODELS AP 494 Application Note BF 494 C shockley diode datasheet
    Text: Application Note 23 Issue 2 March 1996 Zetex SPICE Models Understanding Model Parameters and Applications Limitations Neil Chadderton Introduction SPICE was originally developed as a simulation tool for Integrated Circuit design SPICE being an acronym for


    Original     		PDF 1970s. F632-79. shockley diode application shockley diode transistor bipolar driver schematic diode shockley shockley diode SPICE MODELS spice shockley diode SPICE MODELS AP 494 Application Note BF 494 C shockley diode datasheet

    APP3948

    Abstract: FZT688B FZT788B MAX4373 Si7485DP
    Text: Maxim > App Notes > Amplifier and Comparator Circuits Hot-Swap and Power Switching Circuits Keywords: over-current, fault detector, latched comparator, hot-swap Dec 12, 2006 APPLICATION NOTE 3948 Simple, Latched Overcurrent Fault Detector Has Fast Response Time


    Original     		PDF MAX4373: com/an3948 AN3948, APP3948, Appnote3948, APP3948 FZT688B FZT788B MAX4373 Si7485DP

    Meggitt Electronic Components

    Abstract: APP3948 FZT688B FZT788B MAX4373 Si7485DP
    Text: Maxim > App Notes > AMPLIFIER AND COMPARATOR CIRCUITS HOT-SWAP AND POWER SWITCHING CIRCUITS Keywords: over-current, fault detector, latched comparator, hot-swap Dec 12, 2006 APPLICATION NOTE 3948 Simple, Latched Overcurrent Fault Detector Has Fast Response Time


    Original     		PDF com/an3948 MAX4373: AN3948, APP3948, Appnote3948, Meggitt Electronic Components APP3948 FZT688B FZT788B MAX4373 Si7485DP

    TRANSISTOR REPLACEMENT GUIDE

    Abstract: 2n3904 TRANSISTOR REPLACEMENT GUIDE TI5001 ZTX869 replacement ztx500 equivalent ZTX1048A 2n3904 TRANSISTOR REPLACEMENT ztx107 ZTX790A LM3578
    Text: Application Note 22 Issue 1 May 1996 High Frequency DC-DC Conversion using High Current Bipolar Transistors 400kHz Operation with Optimised Geometry Devices Neil Chadderton Dino Rosaldi Introduction DC-DC conversion is o n e o f t h e fundamental circuit functions within the


    Original     		PDF 400kHz ZTX618 ZTX717 ZTX718 ZTX849 TRANSISTOR REPLACEMENT GUIDE 2n3904 TRANSISTOR REPLACEMENT GUIDE TI5001 ZTX869 replacement ztx500 equivalent ZTX1048A 2n3904 TRANSISTOR REPLACEMENT ztx107 ZTX790A LM3578

    folded cascode rail to rail op amp

    Abstract: folded cascode op amp cpci backplane schematic folded cascode op amp gain folded cascode current mirror op amp FMMT619 LT1800 MPSA42 MPSA92
    Text: DESIGN FEATURES Accurate and Fast 80MHz Amplifier Draws only 2mA by William Jett, Danh Tran and Glen Brisebois Introduction Performance The 80MHz LT1800 amplifier consumes a mere 2mA max supply current and still provides both the speed and DC accuracy required by


    Original     		PDF 80MHz LT1800 100pF OT-23 folded cascode rail to rail op amp folded cascode op amp cpci backplane schematic folded cascode op amp gain folded cascode current mirror op amp FMMT619 MPSA42 MPSA92

    ZTX653 equivalent

    Abstract: ZDT6790 ZXGD3003E6 transistor equivalent ztx1053a ZTX753 equivalent ZDT1049 fmmt417 SOT23-6 NMOS 150V ZTX415 equivalent FZT651
    Text: Version 5.0 Discrete and standard IC product guide Discrete and standard IC product guide Zetex Semiconductors is a specialist in analog technology. We design and manufacture semiconductor solutions for the management of power and analog signals in high performance products.


    Original     		PDF 2002/95/EC) ISO/TS16949 ZTX653 equivalent ZDT6790 ZXGD3003E6 transistor equivalent ztx1053a ZTX753 equivalent ZDT1049 fmmt417 SOT23-6 NMOS 150V ZTX415 equivalent FZT651

    MAC202

    Abstract: led matrix 5x7 coding HIP4080AIP MAC-202 Si9120DJ XR215CP irf60 schematic diagram of laptop inverter schematic diagram dc-ac welding inverter CIRCUIT laptop LCD inverter SCHEMATIC
    Text: INDEX Order Code Description Manufacturer Page Number ADC12130CIN Self-Calibrating 12-Bit Plus Sign Serial I/O A/D Converter with MUX and Sample/Hold LM2587 Series Simple Switcher 5A Flyback Regulator LM2594N50 Simple Switcher® Power Converter LM50CIM3


    Original     		PDF ADC12130CIN 12-Bit LM2587 LM2594N50 LM50CIM3 LM6171BIN LP2980IM5-50 CA3338E HFA1103IP HIP4080AIP MAC202 led matrix 5x7 coding HIP4080AIP MAC-202 Si9120DJ XR215CP irf60 schematic diagram of laptop inverter schematic diagram dc-ac welding inverter CIRCUIT laptop LCD inverter SCHEMATIC

    TX750

    Abstract: ztx450 ztx550 ZETEX medium power complementary transistors ZTX650 zetex transistors TO92
    Text: SUPER E LINE PRODUCT DESCRIPTION Lead configurations The standard lead formation is collector-base-emitter c-b-e "in-line". Alternative lead configurations are available as plug in replacements for TO-5/39 and TO-18 metal can types as well as for surface


    OCR Scan     		PDF O-5/39 ZTX650 ZTX750 ZTX600 ZTX450/ZTX550 TX750 ztx450 ztx550 ZETEX medium power complementary transistors zetex transistors TO92

    ZVN4206E

    Abstract: bss123 marking sa B55123 2N7002 BS170F BSS123 BSS138 VN10LF ZVN3306F ZVN3310F
    Text: SELECTION TABLES B V dss Id V mA at Id Max. mA Min. Pd ^D S on V GS(thl / > Part number 1 TABLE 4: SOT-23 MOSFETS 'SOTFETS' S2 Max. Id mA V qs V Package marking w N-channel ZVN3320F 200 60 1 1 3 1 25 100 10 250 BSS123 100 170 0.68 0.8 2.8 1 6 100 10 360 SA


    OCR Scan     		PDF OT-23 ZVN3320F BSS123 ZVN3310F ZVN4106F ZVN3306F 2N7002 VN10LF BS170F BSS138+ ZVN4206E bss123 marking sa B55123 BSS138

    BAT22

    Abstract: No abstract text available
    Text: SEMICONDUCTOR NETWORKS Zetex Semiconductor networks are arrays o f interconnected or isolated semiconductor dice encapsulated in a single multilead package. In addition to a useful range of standard arrays, we also offer a custom-build engineering service


    OCR Scan     		PDF FF3725JA BAT22 BAT22J BAT24H BAT26 BAT28H BAT22,