zvn210
Abstract: No abstract text available
Text: Sb E II • ^7057« 00070E0 M b SEMICONDUCTOR NETWORKS » Z E T B "1“4 ' 3 r 2 S ZETEX s e m i c o n d u c t o r s Zetex Semiconductor networks are arrays of interconnected or isolated semiconductor dice encapsulated in a single multilead package. In addition to a useful range of standard arrays, we also offer a custom-build engineering service
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00070E0
zvn210
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BF391
Abstract: DD07EGG
Text: bOE D • ^70570 DD07EGG IbT ■ Z E T B ZETEX SEMICONDUCTORS NPN Silicon Planar High Voltage Transistors BF391 BF392 BF393 DESCRIPTION These plastic encapsulated, general purpose transistors are designed for applications requiring high breakdown voltage, low
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DD07EGG
BF391
BF392
BF393
Q720S
BF392
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FERRANTI ZS
Abstract: G-260 ZVP0535 ZVP0535L ZVP0S35A ZVP0S35B p0535
Text: ZETEX SEMICONDUCTORS ^S]> D ^70570 ‘ 0GDS7S7 G • Z E T B 95D 05757 T'31'IS P-channel enhancement mode vertical DMOS FET ZVP0535 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance
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DG05757
ZVP0535
ZVP0S35A
-350V
ZVP0S35B
O-220
FERRANTI ZS
G-260
ZVP0535
ZVP0535L
p0535
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Untitled
Abstract: No abstract text available
Text: bQE » ^70570 ÜG07 21H 754 « Z E T B ZETEX SEMICONDUCTORS PNP Silicon Planar High Voltage Transistors MPSA92 M PSA93 D E S C R IP T IO N T h ese plastic encapsulated, general purpose tran sistors are d esigned for applications requiring high bre akdow n voltages, low
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MPSA92
PSA93
200fjs.
MPSA92
MPSA93
H7057fl
DDG7S17
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Untitled
Abstract: No abstract text available
Text: bOE D • ^^70570 000712^ 551 « Z E T B ZETEX SEMICONDUCTORS P-channel enhancement mode vertical DMOS FET ZVP2120 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance
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ZVP2120
F-231
F-232
F-233
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ZVN2110
Abstract: Zetex dmos ZVIM2110 ZVN2110B ZVN211 F-127 ZVN2110A ZVN2110C ZVN2110E F131
Text: J> bOE ^70570 • ZETEX 0007027 6 TÔ I Z E T B —I SEMICONDUCTORS N-channel enhancement mode vertical D M O S FET ZVN 2110 F EA T U R E S • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance
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ZVN2110
ZVN2110A*
ZVN2110B*
ZVN2110C
Z-130
F-131
70S7fl
4/derating/8/86
ZVN2110
Zetex dmos
ZVIM2110
ZVN2110B
ZVN211
F-127
ZVN2110A
ZVN2110E
F131
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m 60 n 03 g10
Abstract: No abstract text available
Text: ZETEX SEMICONDUCTORS IbE D • Tï7057fl DOOtfl? 4 ■ ZETB SEMICONDUCTOR DICE ELECTRICAL CHARACTERISTICS PNP SWITCHING TRANSISTORS 2N2907A 2N2907 BCY70 BCY71 BCY72 2N4403 2N3906 2N2894 ZTX510 VCbo Min V CE0 Min T on Max 31 Pice type Volts Volts ns . ns 60
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7057fl
2N2907A
2N2907
BCY70
BCY71
BCY72
2N4403
m 60 n 03 g10
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Ferranti Semiconductors
Abstract: No abstract text available
Text: ZETEX SEMICONDUCTORS ^5D T •= 70S 7 fi 0GDS703 T • ZETB D 95D 0 5 7 0 3 T-39-H N-channel enhancement mode vertical DMOS FET ZVN3206 FEATURES • Com pact geometry • Fast switching speeds • N o secondary breakdown • Excellent temperature stability
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0GDS703
T-39-H
ZVN3206
ZVN3206L*
Ferranti Semiconductors
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Untitled
Abstract: No abstract text available
Text: übE J> m ^70570 0GD7D21 022 BIZETB SEMICONDUCTOR NETWORKS ST A N D A R D PRODUCTS - SILICON PLANAR Q UAD T R A N SISTO R S Pin Configuration ZETEX SEMICONDUCTORS n-p-n 1 T O t£ L r- -JRfl N-channel Oj S2 - U t * ,- ' Z 4 - p-n-p &2 U n r o - n n 1_A_1
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BAT22
BAT22J
BAT24H
BAT26
BAT28H
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Siemens F75-54
Abstract: No abstract text available
Text: b OE D • ^70576 N-channel enhancement mode vertical DMOS FET ZETEX 0007775 fc.7T ■ Z E T B ' SEMICONDUCTORS ZVN 0117TA FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent tem perature stability • High input impedance
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0117TA
ZVIVI0117TA
ZVN0117TA
Siemens F75-54
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irfz22
Abstract: IRFZ20/FI
Text: ZETEX SEMICONDUCTORS TSD D ^70370 0005S41 ZETBj T 1 95D 05541 D T*- 7 9 -H N-channel enhancement mode vertical D M O S FET IRFZ20 IRFZ22 ADVANCED INFORMATION FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability
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0005S41
IRFZ20
IRFZ22
O-220
irfz22
IRFZ20/FI
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ZVP2206L
Abstract: No abstract text available
Text: ZETEX S E M I C O N D U C T O R S 1S1> D T cî70S7ô ÜOOSflOl T • ZETB 95D 05801 T ' 37-25 ' P-channel enhancement mode vertical D M O S FET ZVP2206 FEATURES • Com pact geometry • Fast switching speeds • N o secondary breakdown • Excellent temperature stability
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ZVP2206
ZVP2206B*
ZVP2206L
ZVP2206L
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Untitled
Abstract: No abstract text available
Text: ZETEX SEMICONDU.CTORS lt>E D • T c170S7fl 00Db6M5 5 ■ ZETB METAL CAN SPECIFICATIONS _ T-2PI - NPN LOW LEVEL Type V CB VcEO M ax. V CE Mt at Max. •c h FE at Min. M ax. MHz »C mA P.o, a t T iunb =25°C mW Package Complement V le mA 1000 1.2 200 20 65
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170S7fl
00Db6M5
BSY95A
DD0bfl51
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201 ferranti
Abstract: No abstract text available
Text: ZETEX S E M I C O N D U C T O R S TSD D ^70570 0005^5 4 • ZETB 950 05695 T - 3 =? - o ? Z V N 2535 N-channel enhancement mode vertical DMOS FET i FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability
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ZVN2535A
ZVN2535B
ZVN2535L
35ION
O-220
201 ferranti
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ISD 2210
Abstract: No abstract text available
Text: ZETEX SEMICONDUCTORS TSD D Bi T'ïVOSTÔ D O O S b ? ? 2 MZETB 95D 0 5 6 7 7 T '3 ? '0 ? ZV N 2210 N-channel enhancement mode vertical DMOS FET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability
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ZVN2210B*
ZVN2210L
stability39
O-220
ISD 2210
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ZVN4206E
Abstract: ZVN4206 zvn4206a ZVN4206C
Text: bGE D • Ti7057ä G0D7ß77 323 « Z E T B N-channel enhancement mode vertical DMOS FET ZVN4206 ZETEX SEMICONDUCTORS FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance
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ZVN4206
ZVN4206A
ZVN4206C
ZVN420
9/zvN4206
F-181
ZVN4206
11/zvn4206
F-182
ZVN4206E
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Untitled
Abstract: No abstract text available
Text: ZETEX S E M I C O N D U C T O R S T SD D cn 7 D 5 7 ô 00057b? 3 95D 05767 T '3 ,1 - z s ZVP0545 P-channel enhancement mode vertical DMOS FET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability
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n7D57ô
00057b?
ZVP0545
ZVP0545A
ZVP0545B
ZVP0545L
O-220
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t5d diode
Abstract: No abstract text available
Text: ^53 ZETEX SEMICONDUCTORS D TÎ7QS7Ô OOOSbl? h • ZETB 95D 0 5 6 1 7 D — T -3 ? -0 °l ZV N 0124 N-channel enhancement mode vertical DMOS FET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability
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ZVN0124A
ZVN0124B
ZVN0124L
O-220
t5d diode
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G267
Abstract: No abstract text available
Text: ZETEX 15D SEMICONDUCTORS ci ci 7 0 S 7 ñ D DOQSTbS T • ZETB 95D 0 5 7 6 5 T -31-2S P-channel enhancement mode vertical D M O S FET ZVP0540 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability
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-31-2S
ZVP0540
ZVP0540B
ZVP0540L
O-220
G267
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ZNP102
Abstract: BPX25
Text: SbE D • ^70576 D D D 7 D 3 7 MTT ■ Z E T B SILICON PLANAR PHOTOTRANSISTORS GENERAL APPLICATIONS OF ZETEX PHO TO TRANSISTORS ’T " *4 ^ ^ i Alarm System s, Process Control, Edge and Position Sensing, Optical Character Recognition, Tape Readers, Card Readers, Electronic Flash Control, etc.
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ZM100/110,
BPX25/29)
7D57fl
BPX25,
BPX29
ZNP100
ZNP102/3
ZMP31
BPW41C/50C
ZNP102
BPX25
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Untitled
Abstract: No abstract text available
Text: bDE D • T c]7G57fl 0d07flQcl ZETEX N-channel enhancement mode vertical DMOS FET SEMICONDUCTORS ZV N 05 45 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance •
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7G57fl
0d07flQc
ZVN054nt
F-108
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photodiode BPW50
Abstract: No abstract text available
Text: SbE D • ^70570 0007DSS 405 H Z E T B S EM IC O N D U C TO R DICE \” 0 \ ZETEX SEMICONDUCTORS PHOTOTRANSISTORS/PHOTODARLINGTON Dice type Description ZM100 Photodarlington ZM110 Phototransistor ZM210 Phototransistor V CEO V CBO V ebo V V 35 35 35 35 35 35
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0007DSS
ZM100
ZM110
ZM210
BPW41
BPW50
ZPA200
950nm
1K10I
25mmJ
photodiode BPW50
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Untitled
Abstract: No abstract text available
Text: bDE D <^70570 0D07T05 • Dlfi I IZETB ZETEX S E M I C O N D U C T O R S P-channel enhancement mode vertical DMOS FET ZVP1320 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance
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0D07T05
ZVP1320
F-204
F-205
F-207
F-208
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Untitled
Abstract: No abstract text available
Text: bOE » ^70576 • ZETEX S E M I C O N D U C T O R S P-channel enhancement mode vertical D M O S FET ZVP0535 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input Impedance •
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ZVP0535
F-192
F-193
I7G57A
F-194
F-195
F-196
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