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    ZG ZENER Search Results

    ZG ZENER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    ZG ZENER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    zener diode zg

    Abstract: ZG zener E35A21VBR E35A21VBS
    Text: SEMICONDUCTOR E35A21VBS, E35A21VBR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES A ・Average Forward Current : IO=35A. ・Zener Voltage : 21V Typ. POLARITY E35A21VBS (+ Type) : Mark : ZG E35A21VBR (- Type) : Mark : ZA


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    PDF E35A21VBS, E35A21VBR E35A21VBS 100mA, 100mS zener diode zg ZG zener E35A21VBR E35A21VBS

    Untitled

    Abstract: No abstract text available
    Text: SMD Zener Diodes Two Terminals - 400mW 400mW Marking Code Part No. TZDP4.3BWS TZDP4.7BWS TZDP5.1BWS TZDP5.6BWS TZDP6.2BWS TZDP6.8BWS TZDP7.5BWS TZDP8.2BWS TZDP9.1BWS TZDP10BWS TZDP11BWS TZDP12BWS TZDP13BWS TZDP15BWS TZDP16BWS TZDP18BWS TZDP20BWS TZDP22BWS


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    PDF 400mW TZDP10BWS TZDP11BWS TZDP12BWS TZDP13BWS TZDP15BWS TZDP16BWS TZDP18BWS TZDP20BWS

    RD02MUS2

    Abstract: rd02mus TC 4863 DB T112 D 1652 transistor MOSFET RF POWER TRANSISTOR VHF transistor 0882
    Text: MITSUBISHI RF POWER MOS FET RD02MUS2 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 6.0+/-0.15 1.0+/-0.05 2.0+/-0.05 1 4.9+/-0.15


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    PDF RD02MUS2 175MHz 520MHz RD02MUS2 rd02mus TC 4863 DB T112 D 1652 transistor MOSFET RF POWER TRANSISTOR VHF transistor 0882

    diode gp 434

    Abstract: RD07MVS1 RD07MVS2 T112 07MVS1 PO520 zener gp 434
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS2 RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 2.0+/-0.05 2 INDEX MARK Gate For output stage of high power amplifiers In VHF/UHF band mobile radio sets.


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    PDF RD07MVS2 175MHz 520MHz RD07MVS2-101 diode gp 434 RD07MVS1 RD07MVS2 T112 07MVS1 PO520 zener gp 434

    RD02MUS2

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD02MUS2 RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W OUTLINE DRAWING DESCRIPTION 6.0+/-0.15 0.2+/-0.05 (0.22) RD02MUS2 is a MOS FET type transistor 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 specifically designed for VHF/UHF RF power


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    PDF RD02MUS2 175MHz 520MHz RD02MUS2 175MHz, 520MHz 175MHz) 520MHz) Oct2011

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD02MUS2 RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W OUTLINE DRAWING DESCRIPTION 6.0+/-0.15 0.2+/-0.05 (0.22) RD02MUS2 is a MOS FET type transistor 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 specifically designed for VHF/UHF RF power


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    PDF RD02MUS2 175MHz 520MHz RD02MUS2 175MHz, 520MHz 175MHz)

    SOD123 ZA marking

    Abstract: YU 3366
    Text: MM1Z5231C~MM1Z5261C SILICON PLANAR ZENER DIODES PINNING DESCRIPTION PIN Features • Total power dissipation: Max. 500 mW • Small plastic package suitable for surface mounted design • Zener Voltage Tolerance: ± 2% 1 Cathode 2 Anode 2 1 Top View Simplified outline SOD-123 and symbol


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    PDF MM1Z5231C MM1Z5261C OD-123 MM1Z5231C MM1Z5232C MM1Z5234C SOD123 ZA marking YU 3366

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD07MVS2 Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 RD07MVS2 is a MOS FET type transistor specifically designed for VHF/UHF RF power 6.0+/-0.15 0.2+/-0.05 (0.22)


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    PDF RD07MVS2 175MHz 520MHz RD07MVS2 520MHz 175MHz) 520MHz)

    3M Touch Systems

    Abstract: No abstract text available
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS2 RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 6.0+/-0.15 FEATURES 2.0+/-0.05


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    PDF RD07MVS2 175MHz 520MHz RD07MVS2 175MHz) 520MHz) 3M Touch Systems

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet Customer: Product : Zener Chips For LED ESD Protection Part No.: ZN5Z2.5 Series Issued Date: 11-Jan-11 Edition : REV.A VIKING TECH CORPORATION 光頡科技股份有限公司 VIKING TECH CORPORATION KAOHSIUNG BRANCH 光頡科技股份有限公司高雄分公司


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    PDF 11-Jan-11 ZN5Z12

    RD07MVS2

    Abstract: RD07MVS1 T112 teflon s-parameter 3M Touch Systems diode gp 434
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS2 RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 6.0+/-0.15 FEATURES 2.0+/-0.05


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    PDF RD07MVS2 175MHz 520MHz 520MHz 175MHz) 520MHz) RD07MVS2 RD07MVS1 T112 teflon s-parameter 3M Touch Systems diode gp 434

    RD07MVS2

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD07MVS2 Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 RD07MVS2 is a MOS FET type transistor specifically designed for VHF/UHF RF power 6.0+/-0.15 0.2+/-0.05 (0.22)


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    PDF RD07MVS2 175MHz 520MHz RD07MVS2 175MHz) 520MHz) Oct2011

    Untitled

    Abstract: No abstract text available
    Text: PDZ4.7B ~ PDZ36B SURFACE MOUNT SILICON ZENER DIODES VOLTAGE 4.7 to 36 Volts POWER 400 mWatts SOD-323 Unit:inch mm FEATURES • Planar Die construction 0.078(1.95) 0.068(1.75) • 400mW Power Dissipation • Ideally Suited for Automated Assembly Processes


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    PDF PDZ36B OD-323 400mW OD-323, MIL-STD-750, 2010-REV

    2f3 smd

    Abstract: BZX78 1076 SMD CODE TZD4.7WU marking code SMD zg diodes 2f3
    Text: SMD Zener Diodes Two Terminals - 100mW 100mW Part No. TZD3.6F3 TZD3.9F3 TZD4.3F3 TZD4.7F3 TZD5.1F3 TZD5.6F3 TZD6.2F3 TZD6.8F3 TZD7.5F3 TZD8.2F3 TZD9.1F3 TZD10F3 TZD11F3 TZD12F3 TZD13F3 TZD15F3 TZD16F3 TZD18F3 TZD20F3 TZD22F3 TZD24F3 TZD27F3 TZD30F3 TZD33F3


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    PDF 100mW TZD10F3 TZD11F3 TZD12F3 TZD13F3 TZD15F3 TZD16F3 TZD18F3 TZD20F3 2f3 smd BZX78 1076 SMD CODE TZD4.7WU marking code SMD zg diodes 2f3

    ZD 1952

    Abstract: PDZ36B marking zener Z9 diode zener zg 22 Converter for Induction Heating PDZ10B PDZ11B PDZ12B PDZ13B PDZ15B
    Text: PDZ4.7B ~ PDZ36B SURFACE MOUNT SILICON ZENER DIODES VOLTAGE 4.7 to 36 Volts POWER 400 mWatts FEATURES 0.078 1.95 0.068(1.75) • Planar Die construction • 400mW Power Dissipation • Ideally Suited for Automated Assembly Processes • In compliance with EU RoHS 2002/95/EC directives


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    PDF PDZ36B 400mW 2002/95/EC OD-323, MIL-STD-750, OD-323 2010-REV ZD 1952 PDZ36B marking zener Z9 diode zener zg 22 Converter for Induction Heating PDZ10B PDZ11B PDZ12B PDZ13B PDZ15B

    ZENER B02

    Abstract: ZGP10-200 zgp10 160b ZGP10-100 ZGP10-110 ZGP10-120 ZGP10-130
    Text: 3ÔE D 6ENL INSTR/ POWER • 30^0137 GOQMMM? 1 « G I C T-fl-AT ZG P 10-100 T H R U 10-200 ZG P MINIATURE GLASS PASSIVATED JUNCTION PLASTIC ZENER REGULATOR DIODE Voltage -100 to 200 Volts Power Rating -1. 5 Watts FEATURES ♦ High temperature metallurgically bonded con­


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    PDF ZGP1Q-100 ZGP10-200 DO-41 DO-41 MIL-S-19500 ZENER B02 ZGP10-200 zgp10 160b ZGP10-100 ZGP10-110 ZGP10-120 ZGP10-130

    K77 transistor

    Abstract: No abstract text available
    Text: 7U0 ifr S e / U > 3 s h ^ - k p u - r SHINDENGEN SILICON DARLINGTON TRANSISTOR ARRAY SILICON DIODE ARRAY m m jcT-iiX 'i -y a- *< n m m .m .7 £ $ :zg L L x f c i j ,


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    PDF

    D0213AB

    Abstract: No abstract text available
    Text: Z E N E R DIODES 1.8 WATT GLL4735 / GLL4763 AND ZG L4 1 SERIES CASE TYPE: D0-213AB POWER (W) DEVICE TYPE NOMINAL ZENER VOLTAGEO) (Vz) at In (volts) m 1 .0 TEST CURRENT (I z t ) mA KNEE TEST CURRENT (In) mA REVERSE VOLTAGE (Vr) Volts ‘ G LL4735 6.2 41.0


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    PDF GLL4735 GLL4763 D0-213AB LL4735 GLL4736 LL4737 GLL4738 LL4739 GLL4740 GLL4741 D0213AB

    359a

    Abstract: 355AB 01ram 160i 372a CECC40101 SMZG5347A SMZG5348A B371 SMZG5350A
    Text: ¡SEML INSTR/ POWER 5LE D • 30^0137 DOQM'ibS OÖT ■ General ^ Semiconductor - Industries, Inc. FEA TU R ES Z E N E R D IO D E S 1 5 W ATTS 1 0 V THRU 7 5 V SU RFA C E M OUNT SM ZG & SM ZJ S e rie s DESCRIPTIO N CASES This series of surface mount zener


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    PDF SMZG5364A SMZJ5364A SMZG5365A SMZJ5365A SMZG5366A SMZJ5366A SMZG5367A SMZJ5367A SMZG5368A SMZJ5368A 359a 355AB 01ram 160i 372a CECC40101 SMZG5347A SMZG5348A B371 SMZG5350A

    R4571

    Abstract: ZGL41-100 ZGL41-110 ZGL41-120 ZGL41-130 ZGL41-140 ZGL41-150 ZGL41-160 ZGL41-170 ZGL41-200
    Text: ~ñ? GENL INSTR/ POWER m ] | 3 0 ^ 0 13 7 o o o a t.a i T-U 3 f m3 -100 THRU ZGL41^200 GENERAL INSTRUMENT VOLTAGE RANGE 100-200 Volts POWER RATING 1.0 Watt SO LD E R A ete EN DS FEA TU R ES • For surface mounted applications • Plastic package has Underwriters Laboratory


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    PDF ZGL41-200 MIL-STD-202m R4571 ZGL41-100 ZGL41-110 ZGL41-120 ZGL41-130 ZGL41-140 ZGL41-150 ZGL41-160 ZGL41-170 ZGL41-200

    zener diode zg

    Abstract: 3808A diode zener zg 22 3809B zener diode 493 diode DO214 zener diode chip SMZG3791A
    Text: ^ ^ SMZG AND SMZJ 3789 THRU 3809B ^ SURFACE MOUNT ZENER DIODE Zener Voltage-10 to 68 Volts Steady State Power - 1.5 Watts DO-214AA MODIFIED J-BEND DO-215AA D im e n s io n s in in c h e s a n d m illim e te rs l FEATURES MECHANICAL DATA ♦ Plastic package has Underwriters Laboratory Flammability


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    PDF DO-214AA 3809B DO-215AA DO-214/D0215AA STD-750, J3789 J3809B zener diode zg 3808A diode zener zg 22 3809B zener diode 493 diode DO214 zener diode chip SMZG3791A

    Untitled

    Abstract: No abstract text available
    Text: "ñ? GENL INSTR/ POWER m ] | 30=10137 ODOSbai 3 T-il f m3 -100 THRU ZGL41^200 GENERAL INSTRUMENT VO LTAGE RANG E 100-200 Volts P O W ER R A TIN G 1.0 Watt SO L D ER A e te ENDS FE A T U R E S • For surface mounted applications • Plastic package has Underwriters Laboratory


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    PDF ZGL41

    diode zener ZD 36

    Abstract: zener diode, zl 33 DIODE MARKING 9Y zener diode zg 36 diode marking 4Y diode zener ZL 30 diode zener ZD 15 diode zener ZL 15 zener diode BZ 22 zener diode, zl 22
    Text: KDZ2.0W-36W SEM ICONDUCTOR ZENER DIODE SILICON EPITAXIAL PLANAR DIODE TECHNICAL DATA r CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. CATHODE MARK FEATURES • Small Package : VSC • Sharp Breakdown Characteristic. • Normal Voltage Tolerance about ±6% .


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    PDF W-36W 20x20m diode zener ZD 36 zener diode, zl 33 DIODE MARKING 9Y zener diode zg 36 diode marking 4Y diode zener ZL 30 diode zener ZD 15 diode zener ZL 15 zener diode BZ 22 zener diode, zl 22

    Z22V

    Abstract: ZENER 6.2V DO-214AC
    Text: QUICK GUIDE TO ZENER DIODES TYPE GLL4735 thru ZGL41*200, A SML4735 thru SML4763, A SMZG, J3789 thru SMZG, J38G9, A Z4KE100 thru Z4KE200.A DO-213AB DO-214AC DO-214/215AA D0204AL 1.0 1.0 1.5 1.5 Vz=6.2V GLL4735, A SML4735, A Vz=6.8V GLL4736, A SML4736, A Vz~7.5V


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    PDF GLL4735 ZGL41 DO-213AB SML4735 SML4763, DO-214AC J3789 J38G9, DO-214/215AA Z4KE100 Z22V ZENER 6.2V DO-214AC