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Catalog Datasheet	MFG & Type	PDF	Document Tags
2N4400 Abstract: No abstract text available Text: i TOSHIBA SILICON PNP EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE SUITCHING AND AMPLIFIER APPLICATIONS. FEATURES : . Low Leakage Current : ICEV^'lOOnAiMax.), lBEV= 100nA(Max.) <? VCe =-35V, VBE=0.4V	OCR Scan	PDF	ZN44UZ 100nA -150mA, -15mA 2N4400 150mA 500mA -15mA -500mA, 2N4400

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2N4400

Abstract: No abstract text available
Text: i TOSHIBA SILICON PNP EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE SUITCHING AND AMPLIFIER APPLICATIONS. FEATURES : . Low Leakage Current : ICEV^'lOOnAiMax.), lBEV= 100nA(Max.) <? VCe =-35V, VBE=0.4V

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ZN44UZ 100nA -150mA, -15mA 2N4400 150mA 500mA -15mA -500mA, 2N4400