Untitled
Abstract: No abstract text available
Text: BFR92AW NPN 5 GHz wideband transistor Rev. 03 — 12 March 2008 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact
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BFR92AW
BFR92AW
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BFG505
Abstract: No abstract text available
Text: BFG505; BFG505/X NPN 9 GHz wideband transistors Rev. 04 — 22 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact
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BFG505;
BFG505/X
Koninkli20071122
BFG505
BFG505XR
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Untitled
Abstract: No abstract text available
Text: BFG505; BFG505/X NPN 9 GHz wideband transistors Rev. 04 — 22 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact
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BFG505;
BFG505/X
BFG505
BFG505XR
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nec 2401 831
Abstract: nec 2401 2SC5010 nec 2035 744 2SC5010-T1 3699 npn
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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BFG540
Abstract: BFG540X fibreoptical MRA751 PHILIPS BFG540 MRA760
Text: BFG540; BFG540/X; BFG540/XR NPN 9 GHz wideband transistor Rev. 05 — 21 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact
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BFG540;
BFG540/X;
BFG540/XR
BFG540
BFG540XR
BFG540X
fibreoptical
MRA751
PHILIPS BFG540
MRA760
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BFG520
Abstract: No abstract text available
Text: BFG520; BFG520/X; BFG520/XR NPN 9 GHz wideband transistor Rev. 04 — 23 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact
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BFG520;
BFG520/X;
BFG520/XR
BFG520XR
BFG520
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Untitled
Abstract: No abstract text available
Text: BFG540; BFG540/X; BFG540/XR NPN 9 GHz wideband transistor Rev. 05 — 21 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact
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BFG540;
BFG540/X;
BFG540/XR
BFG540
BFG540XR
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2SC5246
Abstract: No abstract text available
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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D-85622
2SC5246
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2SC5247
Abstract: Smpak
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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D-85622
2SC5247
Smpak
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A08 monolithic amplifier
Abstract: MSA-0885 msa0885 mmic a08 A08 mmic HP MMIC Silicon Bipolar Amplifier A08
Text: Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data MSA-0885 purpose 50 Ω gain block above 0.5␣ GHz and can be used as a high gain transistor below this frequency. Typical applications include narrow and moderate band IF and RF amplifiers in commercial and industrial applications.
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MSA-0885
MSA-0885
A08 monolithic amplifier
msa0885
mmic a08
A08 mmic
HP MMIC
Silicon Bipolar Amplifier A08
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MMIC marking code 101
Abstract: MMIC SOT 89 marking CODE sot143 Marking code p1 MSA-0611-TR1G MSA-0611 MSA-0611-BLK MSA-0611-TR1 MSA-0611-TR2 MSA0611
Text: MSA-0611 Cascadable Silicon Bipolar MMIC Amplifier Data Sheet Description Features The MSA-0611 is a low cost silicon bipolar Monolithic Microwave Integrated Circuit MMIC housed in the surface mount plastic SOT‑143 package. This MMIC is designed for use as a general purpose 50Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers in commercial and industrial applications.
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MSA-0611
MSA-0611
OT143
5989-4453EN
AV02-0789EN
MMIC marking code 101
MMIC SOT 89 marking CODE
sot143 Marking code p1
MSA-0611-TR1G
MSA-0611-BLK
MSA-0611-TR1
MSA-0611-TR2
MSA0611
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mmic a08
Abstract: MSA-0885
Text: Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0885 purpose 50 Ω gain block above 0.5 GHz and can be used as a high gain transistor below this frequency. Typical applications include narrow and moderate band IF and RF amplifiers in commercial and industrial applications.
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MSA-0885
MSA-0885
5965-9545E
mmic a08
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s-parameter s11 s12 s21 10000
Abstract: 2SC5008 2SC5008-T1
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: Low Skew, 1-to-2, Differential-to-LVPECL/ECL Fanout Buffer ICS85311I DATA SHEET General Description Features The ICS85311I is a low skew, high performance 1-to-2 Differential-to-2.5V/3.3V ECL/LVPECL Fanout Buffer HiPerClockS and a member of the HiPerClockS™ family of High
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ICS85311I
ICS85311I
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Untitled
Abstract: No abstract text available
Text: Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0870 purpose 50 Ω gain block above 0.5 GHz and can be used as a high gain transistor below this frequency. Typical applications include narrow and moderate band IF and RF amplifiers in industrial
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MSA-0870
MSA-0870
5965-9544E
5968-0528E
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diode gp 421
Abstract: MSA-0870
Text: Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data MSA-0870 purpose 50 Ω gain block above 0.5␣ GHz and can be used as a high gain transistor below this frequency. Typical applications include narrow and moderate band IF and RF amplifiers in industrial
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MSA-0870
MSA-0870
diode gp 421
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MSA-0870
Abstract: No abstract text available
Text: Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0870 purpose 50 Ω gain block above 0.5 GHz and can be used as a high gain transistor below this frequency. Typical applications include narrow and moderate band IF and RF amplifiers in industrial
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MSA-0870
MSA-0870
5965-9544E
5968-0528E
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mmic a08
Abstract: MSA-0885 HP MMIC 101 A08 monolithic amplifier A08 mmic
Text: Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0885 purpose 50 Ω gain block above 0.5 GHz and can be used as a high gain transistor below this frequency. Typical applications include narrow and moderate band IF and RF amplifiers in commercial and industrial applications.
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MSA-0885
MSA-0885
5965-9545E
mmic a08
HP MMIC 101
A08 monolithic amplifier
A08 mmic
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TRANSISTOR 0835
Abstract: mmic a08 0836 MSA-0835 MSA-0836 MSA-0836-BLK MSA-0836-TR1
Text: Cascadable Silicon Bipolar MMIC Amplifiers Technical Data MSA-0835, -0836 0.5 GHz and can be used as a high gain transistor below this frequency. Typical applications include narrow and moderate band IF and RF amplifiers in commercial and industrial applications.
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MSA-0835,
MSA-0835
5965-9596E
5988-4741EN
TRANSISTOR 0835
mmic a08
0836
MSA-0836
MSA-0836-BLK
MSA-0836-TR1
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TRANSISTOR 0835
Abstract: id 0835 45-GP MSA-0835 mmic a08 35 micro-X ceramic Package mmic A08 rf A08 mmic msa0835
Text: Cascadable Silicon Bipolar MMIC Amplifiers Technical Data MSA-0835, -0836 0.5 GHz and can be used as a high gain transistor below this frequency. Typical applications include narrow and moderate band IF and RF amplifiers in commercial and industrial applications.
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MSA-0835,
MSA-0835
5965-9596E
TRANSISTOR 0835
id 0835
45-GP
mmic a08
35 micro-X ceramic Package mmic
A08 rf
A08 mmic
msa0835
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TRANSISTOR 0835
Abstract: mmic a08 A08 monolithic amplifier id 0835 MSA-0835 GHZ micro-X Package 0836 HP MMIC MSA-0836 MSA-0836-BLK
Text: Cascadable Silicon Bipolar MMIC␣ Amplifiers Technical Data MSA-0835, -0836 0.5␣ GHz and can be used as a high gain transistor below this frequency. Typical applications include narrow and moderate band IF and RF amplifiers in commercial and industrial applications.
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MSA-0835,
MSA-0835
TRANSISTOR 0835
mmic a08
A08 monolithic amplifier
id 0835
GHZ micro-X Package
0836
HP MMIC
MSA-0836
MSA-0836-BLK
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BFR520
Abstract: 900MHZ
Text: BFR520 NPN 9 GHz RF Wideband Transistor COLLECTOR 3 P b Lead Pb -Free 1 BASE 2 SOT-23 FEATURES High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability. The transistor is encapsulated in a plastic SOT23 envelope.
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BFR520
OT-23
BFR520
06-Feb-07
OT-23
900MHZ
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SN74LVC1G123
Abstract: A115-A C101 SN74LVC1G123YZPR
Text: SN74LVC1G123 SINGLE RETRIGGERABLE MONOSTABLE MULTIVIBRATOR WITH SCHMITTĆTRIGGER INPUTS SCES586 − JULY 2004 D Available in the Texas Instruments D D D D D D NanoStar and NanoFree Packages Supports 5-V VCC Operation Inputs Accept Voltages to 5.5 V Max tpd of 8 ns at 3.3 V
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SN74LVC1G123
SCES586
SN74LVC1G123
A115-A
C101
SN74LVC1G123YZPR
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ZO 150 74
Abstract: ZO 103 MA 75 522 zo 107 MA 10MHZ BFQ74 Q62702-F788 VCE0518I siemens 800 169 O zo 107 Siemens S7 400
Text: SIEMENS NPN Silicon RF Transistor • For low-noise amplifiers in the GHz range, and broadband analog and digital applications in telecommunications systems at collector currents from 1 mA to 25 mA. • Hermetically sealed ceramic package. • HiRel/Mil screening available.
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Q62702-F788
Bas-135
fi23SbOS
D0b717b
ZO 150 74
ZO 103 MA 75 522
zo 107 MA
10MHZ
BFQ74
VCE0518I
siemens 800 169 O
zo 107
Siemens S7 400
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