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    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY ICS873032 HIGH SPEED, ÷2, DIFFERENTIAL-TO-3.3V, 5V LVPECL/ECL CLOCK GENERATOR GENERAL DESCRIPTION FEATURES The ICS8 73032 is a high speed, high perforICS mance Differential-to-3.3V, 5V LVPECL/ECL Clock HiPerClockS Generator and a member of the HiPerClockS ™


    Original     		PDF ICS873032 ICS873032 199707558G

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY ICS873032 HIGH SPEED, ÷2, DIFFERENTIAL-TO-3.3V, 5V LVPECL/ECL CLOCK GENERATOR GENERAL DESCRIPTION FEATURES The ICS8 73032 is a high speed, high perforICS mance Differential-to-3.3V, 5V LVPECL/ECL Clock HiPerClockS Generator and a member of the HiPerClockS ™


    Original     		PDF ICS873032 ICS873032 199707558G

    TLE2071

    Abstract: TLE2071ACD TLE2071AID TLE2071AMFK TLE2071AMJG TLE2071CD TLE2071ID TLE2071MFK TLE2426
    Text: TLE207x, TLE207xA, TLE207xY EXCALIBUR LOW-NOISE HIGH-SPEED JFET-INPUT OPERATIONAL AMPLIFIERS SLOS181A – FEBRUARY 1997 – REVISED MARCH 2000 D D D Direct Upgrades to TL05x, TL07x, and TL08x BiFET Operational Amplifiers Greater Than 2x Bandwidth 10 MHz and


    Original     		PDF TLE207x, TLE207xA, TLE207xY SLOS181A TL05x, TL07x, TL08x TL07x TLE207x TL07x TLE2071 TLE2071ACD TLE2071AID TLE2071AMFK TLE2071AMJG TLE2071CD TLE2071ID TLE2071MFK TLE2426

    AT-32011

    Abstract: AT-31011 AT32011 AT-32033 AT-32033-TR1G sot-23 marking code 352
    Text: AT-32011, AT-32033 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-32011 and AT-32033 are high performance NPN bipolar transistors that have been optimized for maximum ft at low voltage operation, making them ideal


    Original     		PDF AT-32011, AT-32033 AT-32011 AT-32033 AT32011 OT-143. 5989-2643EN AV02-0796EN AT-31011 AT-32033-TR1G sot-23 marking code 352

    AT-32033-TR1g

    Abstract: AT-32011 AT-32011-BLK AT-32011-TR1 AT-32033 AT-32033-BLK
    Text: Agilent AT-32011, AT-32033 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Features Description Agilent’s AT-32011 and AT-32033 are high performance NPN bipolar transistors that have been optimized for maximum ft at low voltage operation, making them


    Original     		PDF AT-32011, AT-32033 AT-32011 AT-32033 OT-23, OT-143. OT-143 AT-32011) AT-32033-TR1g AT-32011-BLK AT-32011-TR1 AT-32033-BLK

    AT-31011

    Abstract: AT32011 AT-32011 AT-32033 AT-32033-TR1G sot-23 npn marking code 162
    Text: AT-32011, AT-32033 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-32011 and AT-32033 are high performance NPN bipolar transistors that have been optimized for maximum ft at low voltage operation, making them ideal


    Original     		PDF AT-32011, AT-32033 AT-32011 AT-32033 AT32011 OT-143. transis20 5989-2643EN AV02-0796EN AT-31011 AT-32033-TR1G sot-23 npn marking code 162

    AT-32011

    Abstract: AT-32011-BLK AT-32011-TR1 AT-32033 AT-32033-BLK
    Text: AT-32011, AT-32033 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-32011 and AT-32033 are high performance NPN bipolar transistors that have been optimized for maximum ft at low voltage operation, making them


    Original     		PDF AT-32011, AT-32033 AT-32011 AT-32033 OT-23, OT-143. AT-32011: AT-32033: AT-32011-BLK AT-32011-TR1 AT-32033-BLK

    transistor SMD MARKING CODE 772

    Abstract: smd Transistor 1117 marking code 933 SMD Transistor SMD CODE MARKING 1046 SMD MARKING CODE WG sot-343 transistor smd code 404
    Text: P-HEMT CFH 400 Preliminary Data Sheet • Low noise figure and high associated gain for high IP3 receiver stages up to 4 GHz F = 0.55 dB; GA = 15.7 dB @ 3 V; 10 mA; f = 1.8 GHz • Suitable for PCS CDMA and UMTS applications • Low cost miniature package P-SOT343-4-1


    Original     		PDF P-SOT343-4-1 Q62702-G0116 RN/50 GPS05605 transistor SMD MARKING CODE 772 smd Transistor 1117 marking code 933 SMD Transistor SMD CODE MARKING 1046 SMD MARKING CODE WG sot-343 transistor smd code 404

    transistor SMD MARKING CODE 772

    Abstract: SMD MARKING CODE 201 952 transistor zo 607 zo 607 MA smd Transistor 1117 transistor smd code marking 404 DSA0062290 transistor zo 107 in 4436 zo 607
    Text: P-HEMT CFH 400 Preliminary Data Sheet • Low noise figure and high associated gain for high IP3 receiver stages up to 4 GHz F = 0.55 dB; GA = 15.7 dB @ 3 V; 10 mA; f = 1.8 GHz • Suitable for PCS CDMA and UMTS applications • Low cost miniature package P-SOT343-4-1


    Original     		PDF P-SOT343-4-1 Q62702-G0116 RN/50 GPS05605 transistor SMD MARKING CODE 772 SMD MARKING CODE 201 952 transistor zo 607 zo 607 MA smd Transistor 1117 transistor smd code marking 404 DSA0062290 transistor zo 107 in 4436 zo 607

    Untitled

    Abstract: No abstract text available
    Text: TLE207x, TLE207xA, TLE207xY EXCALIBUR LOW-NOISE HIGH-SPEED JFET-INPUT OPERATIONAL AMPLIFIERS SLOS181A – FEBRUARY 1997 – REVISED MARCH 2000 D D D Direct Upgrades to TL05x, TL07x, and TL08x BiFET Operational Amplifiers Greater Than 2x Bandwidth 10 MHz and


    Original     		PDF TLE207x, TLE207xA, TLE207xY SLOS181A TL05x, TL07x, TL08x TL07x TLE207x

    TLE2081

    Abstract: TLE2082 TLE2084 2 MHz ultrasonic sensor TLC 1050 TLE2081ACD TLE2081ACP TLE2081AMFK TLE2082M TLE2081CD
    Text: TLE208x, TLE208xA, TLE208xY EXCALIBUR HIGH-SPEED JFET-INPUT OPERATIONAL AMPLIFIERS SLOS182A – FEBRUARY 1997 – REVISED MARCH 2000 D D Direct Upgrades to TL05x, TL07x, and TL08x BiFET Operational Amplifiers Greater Than 2x Bandwidth 10 MHz and 3× Slew Rate (45 V/µs) Than TL08x


    Original     		PDF TLE208x, TLE208xA, TLE208xY SLOS182A TL05x, TL07x, TL08x TL08x TLE208x TL07x TLE2081 TLE2082 TLE2084 2 MHz ultrasonic sensor TLC 1050 TLE2081ACD TLE2081ACP TLE2081AMFK TLE2082M TLE2081CD

    SR8800SPQ

    Abstract: coaxial resonator, skyworks SR8800SPQ1160BY sr8800 1.8 GHz direct frequency vco with cad assessment SR8800SPQ1995BY ceramic coaxial resonators rohde SMV1104-34 inductor sp
    Text: APPLICATION NOTE No. 1008: Coaxial Resonators for VCO Applications* Many engineers choose to design their own VCO circuits to reduce cost, size, and power consumption. Development of high Q ceramic coaxial resonators simplifies the VCO design process. When a Skyworks coaxial resonator transmission line


    Original     		PDF

    DL2229

    Abstract: GTD-18494 K4219 KGL4219G
    Text: GTD-18494 Rev4.0 1Electronic Components Preliminary KGL4219G This version: 19 March 2002 Limiting Amplifier IC DESCRIPTION KGL4219G, Limiting Amplifier IC with 0.18µm gate length GaAs MESFETs, is designed for 10Gb/s digital communication systems. By using DCFL Direct Coupled FET Logic , high sensitibity and low power dissipation


    Original     		PDF GTD-18494 KGL4219G KGL4219G, 10Gb/s DL2229 K4219 KGL4219G

    TLE2084

    Abstract: TLE2081 TLE2082 TLE2082M
    Text: TLE208x, TLE208xA, TLE208xY EXCALIBUR HIGH-SPEED JFET-INPUT OPERATIONAL AMPLIFIERS SLOS182A – FEBRUARY 1997 – REVISED MARCH 2000 D D Direct Upgrades to TL05x, TL07x, and TL08x BiFET Operational Amplifiers Greater Than 2x Bandwidth 10 MHz and 3× Slew Rate (45 V/µs) Than TL08x


    Original     		PDF TLE208x, TLE208xA, TLE208xY SLOS182A TL05x, TL07x, TL08x TL08x TLE208x TL07x TLE2084 TLE2081 TLE2082 TLE2082M

    BFQ 58

    Abstract: No abstract text available
    Text: SIEM ENS NPN Silicon RF Transistor BFQ 29P • For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA. S CECC-type available: CECC 50002/258. ESD: Electrostatic discharge sensitive device, observe handling precautions!


    OCR Scan     		PDF Q62702-F659 OT-23 fi23SbDS BFQ 58

    mga 017

    Abstract: TA111 MGA-62100-GP0 MGA-62100-GP2 MGA-62100-GP6 MGA-621
    Text: d a ta sheet O avantek MG A-62100 Low Noise G aAs MM IC Am plifier O ctober, 1989 Features • • • Avantek Chip Outline Output Matched 2 Stage FET Cascade Broadband Performance: 2 - 1 4 GHz Low Noise Figure 50 £ 2 : 2.5 dB typical at 4 GHz 5.0 dB typical at 14 GHz


    OCR Scan     		PDF MGA-62100 mga 017 TA111 MGA-62100-GP0 MGA-62100-GP2 MGA-62100-GP6 MGA-621

    Untitled

    Abstract: No abstract text available
    Text: data sheet 0AVANTEK M G A-62100 Low Noise G aA s MM IC A m plifier O ctober, 1989 Features • • • Avantek Chip Outline Output Matched 2 Stage FET Cascade Broadband Performance: 2 - 1 4 GHz Low Noise Figure 50 ft : 2.5 dB typical at 4 GHz 5.0 dB typical at 14 GHz


    OCR Scan     		PDF MGA-62100

    ZO 150 74

    Abstract: ZO 103 MA 75 522 zo 107 MA 10MHZ BFQ74 Q62702-F788 VCE0518I siemens 800 169 O zo 107 Siemens S7 400
    Text: SIEMENS NPN Silicon RF Transistor • For low-noise amplifiers in the GHz range, and broadband analog and digital applications in telecommunications systems at collector currents from 1 mA to 25 mA. • Hermetically sealed ceramic package. • HiRel/Mil screening available.


    OCR Scan     		PDF Q62702-F788 Bas-135 fi23SbOS D0b717b ZO 150 74 ZO 103 MA 75 522 zo 107 MA 10MHZ BFQ74 VCE0518I siemens 800 169 O zo 107 Siemens S7 400

    Untitled

    Abstract: No abstract text available
    Text: MGA-62100 Low Noise GaAs MMIC Amplifier HEW LETT PA C K A R D *H P A m Features 014 GG1 0 EDS 4447564 • • Output Matched 2 Stage FET Cascade Broadband Performance: 2 - 1 4 GHz Low Noise Figure 50 £2 : 2.5 dB typical at 4 GHz 5.0 dB typical at 14 GHz


    OCR Scan     		PDF MGA-62100 MGA-62100

    BFQ70

    Abstract: zo 107 NA BFq 98 transistor zo 109 zo 107 MA ST2C Q62702-F774 VCE051S1 bfq 85 zo 107
    Text: SIEM ENS NPN Silicon RF Transistor • For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2 mA to 20 mA. • Hermetically sealed ceramic package • HiRel/Mil screening available. ESD: Electrostatic discharge sensitive device, observe handling precautions!


    OCR Scan     		PDF VCE051S1 Q62702-F774 fi23SbOS 0Gb7117 BFQ70 zo 107 NA BFq 98 transistor zo 109 zo 107 MA ST2C VCE051S1 bfq 85 zo 107

    IP3 MARK

    Abstract: aabl
    Text: 19-1181; Rev 1; 7/9? J ¥ ìj ixiyü _ GeneraI Description The MAX2630/MAX2631/MAX2632/MAX2633 are lowvoltage, low-noise am plifiers for use from VHF to microwave frequencies. Operating from a single +2.7V to +5.5V supply, these devices have a fla t gain


    OCR Scan     		PDF MAX2630/MAX2631/MAX2632/MAX2633 900MHz. MAX2630/MAX2631 MAX2632/MAX2633 MAX263 MAX2631 X2630-M X2633 IP3 MARK aabl

    Untitled

    Abstract: No abstract text available
    Text: SIEM ENS NPN Silicon RF Transistor • For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2 mA to 20 mA. • Hermetically sealed ceramic package • HiRel/Mil screening available. ESD: Electrostatic discharge sensitive device, observe handling precautions!


    OCR Scan     		PDF BFQ70 Q62702-F774 S23SbOS 0Db7117

    Untitled

    Abstract: No abstract text available
    Text: MAR d a ta sh e et 8 Q iA V A N T E K MSA-0400 MODAMP Cascadable Silicon Bipolar M onolithic Microwave Integrated C ircuit A m plifiers October, 1989 Avantek Chip Outline1 Features • • • • Cascadable 50 Q Gain Block 3 dB Bandwidth: DC to 4.0 GHz


    OCR Scan     		PDF MSA-0400 MSA-0400

    5N521

    Abstract: BFQ71 VCE05181 bfq 85 Q62702-F775 siemens Pm 90 87 transistor zo 103 MA 7S 714
    Text: SIEMENS BFQ71 NPN Silicon RF Transistor • For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA. • Hermetically sealed ceramic package. • HiRel/Mil screening available. B CECC-type available: CECC 50002/260.


    OCR Scan     		PDF BFQ71 Q62702-F775 0235bG5 DGb713S 5N521 VCE05181 bfq 85 siemens Pm 90 87 transistor zo 103 MA 7S 714