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    ZQ TRANSISTOR Search Results

    ZQ TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    ZQ TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: R1Q5A3636B/R1Q5A3618B 36-Mbit DDRII SRAM 4-word Burst REJ03C0344-0001 Preliminary Rev. 0.01 Jan. 31, 2008 Description The R1Q5A3636B is a 1,048,576-word by 36-bit, the R1Q5A3618B is a 2,097,152-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It


    Original     		PDF R1Q5A3636B/R1Q5A3618B 36-Mbit REJ03C0344-0001 R1Q5A3636B 576-word 36-bit, R1Q5A3618B 152-word 18-bit 165-pin

    Untitled

    Abstract: No abstract text available
    Text: R1Q4A3636B/R1Q4A3618B 36-Mbit DDRII SRAM 2-word Burst REJ03C0343-0001 Preliminary Rev. 0.01 Jan. 31, 2008 Description The R1Q4A3636B is a 1,048,576-word by 36-bit, the R1Q4A3618B is a 2,097,152-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It


    Original     		PDF R1Q4A3636B/R1Q4A3618B 36-Mbit REJ03C0343-0001 R1Q4A3636B 576-word 36-bit, R1Q4A3618B 152-word 18-bit 165-pin

    2L TRANSISTOR

    Abstract: marking code 576 R1Q4A3618BBG-33R R1Q4A3618BBG-40R R1Q4A3636B R1Q4A3636BBG-33R R1Q4A3636BBG-40R R1Q4A3636BBG-50R R1Q4A3636BBG-60R R1Q4A3618BBG-60R
    Text: R1Q4A3636B/R1Q4A3618B 36-Mbit DDRII SRAM 2-word Burst REJ03C0343-0003 Preliminary Rev. 0.03 Apr.11, 2008 Description The R1Q4A3636B is a 1,048,576-word by 36-bit, the R1Q4A3618B is a 2,097,152-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It


    Original     		PDF R1Q4A3636B/R1Q4A3618B 36-Mbit REJ03C0343-0003 R1Q4A3636B 576-word 36-bit, R1Q4A3618B 152-word 18-bit 165-pin 2L TRANSISTOR marking code 576 R1Q4A3618BBG-33R R1Q4A3618BBG-40R R1Q4A3636BBG-33R R1Q4A3636BBG-40R R1Q4A3636BBG-50R R1Q4A3636BBG-60R R1Q4A3618BBG-60R

    fbga 15x17

    Abstract: fbga 15x17 tray KA Finance activities R1Q5A3618B R1Q5A3618BBG-33R R1Q5A3618BBG-40R R1Q5A3636B R1Q5A3636BBG-33R R1Q5A3636BBG-40R R1Q5A3636BBG-50R
    Text: R1Q5A3636B/R1Q5A3618B 36-Mbit DDRII SRAM 4-word Burst REJ03C0344-0003 Preliminary Rev. 0.03 Apr.11, 2008 Description The R1Q5A3636B is a 1,048,576-word by 36-bit, the R1Q5A3618B is a 2,097,152-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It


    Original     		PDF R1Q5A3636B/R1Q5A3618B 36-Mbit REJ03C0344-0003 R1Q5A3636B 576-word 36-bit, R1Q5A3618B 152-word 18-bit 165-pin fbga 15x17 fbga 15x17 tray KA Finance activities R1Q5A3618BBG-33R R1Q5A3618BBG-40R R1Q5A3636BBG-33R R1Q5A3636BBG-40R R1Q5A3636BBG-50R

    014e1

    Abstract: cce 7100 transistor d 13009 br 8764 CD 5888 cb ic CD 5888 CB bf 0252 ha 14052 transistor j 13009 NE68530
    Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE685 SERIES FEATURES_ • LOW COST • SMALL AND ULTRA SMALL SIZE PACKAGES ♦ • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH GAIN BANDWIDTH PRODUCT: fr of 1 2 GHz • NOISE FIGURES OF 1.5 dB AT ZQ GHZ


    OCR Scan     		PDF NE685 NE68518-T1 NE68519-T1 E68530-T1 NE68533-T1 NE68539-T1 NE68539R-T1 24-Hour 014e1 cce 7100 transistor d 13009 br 8764 CD 5888 cb ic CD 5888 CB bf 0252 ha 14052 transistor j 13009 NE68530

    31033P

    Abstract: No abstract text available
    Text: What H E W L E T T * mLliMPACKARD Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-31011 AT-31033 Features Description • High P erform ance B ipolar T ran sistor O ptim ized for L ow Current, L ow V oltage O peration • 900 MHz Perform ance:


    OCR Scan     		PDF AT-31011 AT-31033 AT-31033 OT-143 sAT-31011 OT-23, AT-310nt 31033P

    zq transistor

    Abstract: C1 macro-X
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M RF837 The RF Line NPN Silicon RF Low P o w er Transistor . . . designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. • Specified @ 12.5 V, 870 MHz Characteristics Output Power = 750 mW


    OCR Scan     		PDF RF837 --j11 2-j16 zq transistor C1 macro-X

    IC SEM 2105

    Abstract: common emitter transistors
    Text: What H E W L E T T * miltm PACKARD Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-30511 AT-30533 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance:


    OCR Scan     		PDF AT-30511 AT-30533 AT-30533 OT-23 OT-143 sAT-30511 OT-23, IC SEM 2105 common emitter transistors

    PJ 0416 1v

    Abstract: PJ 1179
    Text: What H E W LET T 1"KM PA C K A R D Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32032 Features • High Perform ance Bipolar Transistor Optimized for Low Current, Low Voltage Applications at 900 MHz, 1.8 GHz, and 2.4 GHz • Perform ance at 2.7 V, 5 mA:


    OCR Scan     		PDF AT-32032 OT-323 SC-70) SC-70 OT-323) PJ 0416 1v PJ 1179

    at30b

    Abstract: AT-80B11 AT-30611 sj 2252 ic AT-30S33 transistor SJ 2518 AT-80533
    Text: warn HEWLETT ASEI PACKARD Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-30511 AT-30633 F eatu res D escription * High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation * Amplifier Tested 900 MHz


    OCR Scan     		PDF AT-30511 AT-30633 AT-30533 OT-23 OT-143 OT-23, at30b AT-80B11 AT-30611 sj 2252 ic AT-30S33 transistor SJ 2518 AT-80533

    Untitled

    Abstract: No abstract text available
    Text: Temic BF 775 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to 2GHz especially for wide band antenna amplifier mixers and oscillators in TV-sat-tuners. Features • • • High power gain Low noise figure High transition frequency


    OCR Scan     		PDF BF775 6R200Rb 00127E0 BF775

    C945C

    Abstract: No abstract text available
    Text: What H E W L E T T * mLliM PACKARD Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32063 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation The AT-32063 contains two high


    OCR Scan     		PDF AT-32063 OT-363 SC-70) AT-32063 OT-363 C945C

    AT-310

    Abstract: AT-31011 AT-31033 SAI SOT23
    Text: Thal mLßm HP AE CWKLAERTDT Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data - I AT-31011 AT-31033 Features Description • High Perform ance Bipolar


    OCR Scan     		PDF AT-31011 AT-31033 AT-31011: AT-31033: OT-143 OT-143 AT-31011) OT-23 AT-31033) AT-310 SAI SOT23

    Y parameters of transistors at41533

    Abstract: No abstract text available
    Text: What HEWLETT* m iltm PACKARD General Purpose, Low Noise NPN Silicon Bipolar Transistor Technical Data A T -4 1 5 1 1 A T -4 1 5 3 3 F e a tu re s • General Purpose NPN Bipolar Transistor • 900 MHz Performance: A T -41511: 1 dBNF, 15.5 dBGA A T -41533: 1 dBNF, 14.5 dBGA


    OCR Scan     		PDF OT-23 OT-143 sAT-41511 AT-41533 OT-23, AT-415 OT-143. Y parameters of transistors at41533

    Untitled

    Abstract: No abstract text available
    Text: What HEWLETT 1 "KM PACK ARD General Purpose, Low Current NPN Silicon Bipolar Transistor Technical Data AT-41532 Features • G eneral P urpose NPN B ipolar T ran sistor O ptim ized for Low C urrent, Low V oltage A p p lications at 900 MHz, 1.8 GHz, and 2.4 GHz


    OCR Scan     		PDF AT-41532 OT-323 SC-70 OT-323) 5965-6167E

    sot303

    Abstract: No abstract text available
    Text: Wfiït mitÍM HP AECWKLAERTDT Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32063 Features • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • Amplifier Tested 900 MHz Performance: 1.3 dB NF,


    OCR Scan     		PDF AT-32063 OT-363 vailable111 OT-363 5665-1234E sot303

    sot-23 MARKING CODE ZA

    Abstract: BFQ29P
    Text: NPN Silicon RF Transistor BFQ29P • For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 to 20 mA. E CECC-type available: CECC 50002/258. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking


    OCR Scan     		PDF BFQ29P 62702-F sot-23 MARKING CODE ZA BFQ29P

    Untitled

    Abstract: No abstract text available
    Text: HITACHI 2SC4899-Silicon NPN Bipolar Transistor Application CMPAK VHF & UHF wide band amplifire Features • High gain bandwidth product fT = 9 GHz typ • High gain, low noise figure PG = 14.0 dB typ, NF = 1.2 dB typ at f = 900 MHz t Table 1 Absolute Maximum Ratings Ta = 25°C


    OCR Scan     		PDF 2SC4899-----Silicon 2SC4899

    ATF-36077-STR

    Abstract: 5965-8726E
    Text: Thal H E W L E T T mLEm P A C K A R D 2 -1 8 GHz Ultra Low N oise Pseudomorphic HEMT Technical Data ATF-36077 Features Description • PHEMT T echnology • Ultra-Low N o ise Figure: Hewlett-Packard’s ATF-36077 is an ultra-low-noise Pseudomorphic High Electron Mobility Transistor


    OCR Scan     		PDF ATF-36077 ATF-36077 5962-0193E 5965-8726E 44475A4 001772b ATF-36077-STR 5965-8726E

    BFR92P

    Abstract: No abstract text available
    Text: 3 S E D • ö5 3b3 EG 0G17GQ2 T W ËSI P NPN Silicon RF Transistor SIEMENS/ SPCLi SEMICONDS BFR92P _ 7_ • For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 to 20 mA. C £ CECC-type available: CECC 50002/254.


    OCR Scan     		PDF 0G17GQ2 BFR92P OT-23 BFR92P

    Transistor BFR 191

    Abstract: bfr 49 transistor transistor eb 2030
    Text: BFR 92P NPN Silicon RF Transistor • For broadband am plifiers up to 2 GHz and fast non-saturated sw itches at co lle cto r currents from 0.5 to 20 mA. C E C EC C -type available: CECC 50002/254. ESD: E lectrostatic discharge sensitive device, observe handling precautions!


    OCR Scan     		PDF OT-23 Transistor BFR 191 bfr 49 transistor transistor eb 2030

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENN6573 NPN Epitaxial Planar Silicon Transistor EC3H01B ISABlYOi VHF Band Low-Noise Amplifer and OSC Applications Features Package Dimensions • L ow noise : N F = 1 .8 d B typ f= 1 5 0 M H z . unit : mm • H igh g a in : | S 2 1 e 12= 16d B typ (f= l5 0 M H z ).


    OCR Scan     		PDF ENN6573 EC3H01B E-CSP1006-3

    CQ 523

    Abstract: cq 531 mc 5357 Z0 607 2SC5245 FC157 s22L transistor but 607 cq 765 NPN/CQ 523
    Text: O rd e rin g n u m b e r: EN5433 _ FC157 NPN Epitaxial Planar Silicon Composite Transistor High-Frequency Low-Noise Amp, Differential Amp Applications F eatu re s •Composite type with 2 transistors contained in the CP package currently in use, improving the


    OCR Scan     		PDF EN5433 FC157 FC157 2SC5245, CQ 523 cq 531 mc 5357 Z0 607 2SC5245 s22L transistor but 607 cq 765 NPN/CQ 523

    motorola AN938

    Abstract: MRF567 mrf56
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF557 The RF Line 1.5 W 870 M H z RF LOW POWER TRANSISTOR NPN SILICON RF LOW POWER TRANSISTOR N P N SILICON . . . d e s ig n e d p rim a rily fo r w id e b a n d large s ig n a l p redrive r stages in the 800 M H z fre q u en cy range.


    OCR Scan     		PDF MRF557 motorola AN938 MRF567 mrf56