ZTX601
Abstract: ZTX600 DSA003770
Text: ZTX600 ZTX601 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL Static Forward Current Transfer Ratio hFE ZTX600 ZTX601 MAX. MIN. TYP. MAX. 1K 2K 1K 1K 100K 2K 1K 100K IC=50mA, VCE=10V* IC=0.5A, VCE=10V* IC=1A, VCE=10V*
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ZTX600
ZTX601
100ms
ZTX601
ZTX600
DSA003770
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ZTX601
Abstract: No abstract text available
Text: ZTX600 Not Recommended for New Design Please Use ZTX601 ZTX600 ZTX601 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL Static Forward Current Transfer Ratio hFE ZTX600 ZTX601 MAX. MIN. TYP. MAX. 1K 2K 1K 1K 100K 2K 1K
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ZTX600
ZTX601
ZTX601
ZTX600
100ms
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ZTX653 equivalent
Abstract: ZTX753 equivalent fzt651 ZDT1049 ztx1056A ztx651 equivalent equivalent FZT651 zldo 17 50 1N4148 SOD323 DIODE S4 58A
Text: SELECTION GUIDE Discrete semiconductors Bipolar transistors | Diodes | MOSFETs Discrete semiconductors Bipolar transistors Zetex Semiconductors provides product designers with a broad range of discrete semiconductor components renowned for their quality, high performance and optimized
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2002/95/EC)
ZTX653 equivalent
ZTX753 equivalent
fzt651
ZDT1049
ztx1056A
ztx651 equivalent
equivalent FZT651
zldo 17 50
1N4148 SOD323
DIODE S4 58A
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AP3039AM
Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502
Text: Diodes Incorporated RoHS & REACH Compliance Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (RoHS) 2002/95/EC (repealed as from 3 January 2013 but listed here for completeness) & 2011/65/EU (RoHS II)
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2000/53/EC
2000/53/EC
2002/95/EC
2011/65/EU
SOR/2014-254
SJ/T11363-2006
GL-106
AP3039AM
12SN7
AZ1117EH-3
AP3031K
zabg6001
SMBJ11CA
ztx689
DMN33D8L
ap1901
AP3502
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ferranti
Abstract: ZTX600 ZTX601 Scans-00107859 Ferranti Semiconductors
Text: FERRANTI semiconductors ZTX600 ZTX601 NPN Silicon Medium Power Darlington Transistors FE A T U R ES • 1.5W power dissipation at Tamb = 25°C • 1A continuous collector current • High V CE0 up to 160V • Guaranteed hFE specified up to 1A • Fast switching
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ZTX600
ZTX601
ZTX601
100mA
100mA
ferranti
Scans-00107859
Ferranti Semiconductors
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MPSA42
Abstract: MPSA43 ZTX342 ZTX454 ZTX455 ZTX654 ZTX655 ZTX656 ZTX657
Text: SLE D • T c17057fl D 0 G 7 D S 1 fibT ■ Z E T B SEMICONDUCTOR DICE ZETEX S E M I C O N D U C T O R S NPN HIGH VOLTAGE V CBO V CEO 300 300 200 200 150 160 140 125 120 100 300 300 200 200 150 140 120 125 120 100 Volts Min. Max. 100 100 100 100 100 100 100
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00Q7DS1
ZTX657
MPSA42
ZTX656
MPSA43
ZTX655
ZTX455
ZTX454
ZTX654
ZTX757
ZTX342
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Untitled
Abstract: No abstract text available
Text: ZETEX SEM ICONDU CTOR S IbE D • c^70S7fl 000bfl7fl b ■ ZETB SEMICONDUCTOR DICE ELECTRICAL CHARACTERISTICS \ ' Z c\-2-3> NPN HIGH VOLTAGE Dice type VCBO Min VCEO Min Volts Volts •cBO , Max a t VCB nA Volts at M ilt Max v« mA V o lt* V easw ■ at lc
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70S7fl
000bfl7fl
ZTX657
MPSA42
ZTX656
MPSA43
ZTX655
ZTX455
ZTX454
ZTX654
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ZTX458
Abstract: BF493 BF392 BF393 MPSA92 ZTX558 ZTX658 ZTX757 ZTX758 2N5401 BF391
Text: TABLE 13 : NPN/PNP HIGH VOLTAGE TRANSISTORS The tra n s is to rs s h o w n in th is ta b le are designed fo r d rivin g num erical in d ica to r tu b es, neon lam ps and o th e r a p p lica tio n s requiring high vo lta g e ca p a b ility. V cbo M ax ICBO
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ZTX658
ZTX758
ZTX458
ZTX558
ZTX6575
ZTX757
MPSA425
MPSA92
BF393
BF493
BF493
BF392
MPSA92
ZTX558
ZTX757
ZTX758
2N5401 BF391
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ZT Ferranti
Abstract: BF4935P SE-169 TX-550 X752 X449
Text: ZETEX S E M I C O N D U C T O R S =IS]> D • clci7 Q S 78 0 0 0 S 0 7 S 1 M Z E T B ~T-Tl-Ol Super E-line transistors TABLE 1 : NPN/PNP SUPER E-LINE These devices offer the ultimate performance for TQ-92 style package, they have been designed to operate and provide useful gain at current
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TQ-92
ZTX752
ZTX751
ZTX749
SO-96
107il/D
SE172
ZT Ferranti
BF4935P
SE-169
TX-550
X752
X449
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