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    Plessey Semiconductors Discrete Components Div ZVP2110AM1

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    Untitled

    Abstract: No abstract text available
    Text: ZVP2110AM1 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V) I(D) Max. (A)230m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)700m Minimum Operating Temp (øC)


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    Abstract: No abstract text available
    Text: bGE D • ZETEX SEMICONDUCTORS 4 tlt:J7DS?ô ÜQD?bûS b 3 fi ■ ZETB CENTRE BASE E-LINE 'M V 'P' Channel Small Signal MOSFETs Part Number BV dss Id 'dm V mA A V Min. VcSlth Max. a •o mA ÎÎ a Max. R d S I o ii ) Id mA Pd VP w ZVP0545AM 1 -450 -45 - 0 .4


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